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MSM514262-80JS

262,144-Word x 4-Bit Multiport DRAM

器件类别：存储    存储   

厂商名称：OKI

厂商官网：http://www.oki.com

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参数 预览 参数对比
器件参数
参数名称
属性值
厂商名称
OKI
零件包装代码
SOJ
包装说明
SOJ,
针数
28
Reach Compliance Code
unknown
ECCN代码
EAR99
访问模式
FAST PAGE
最长访问时间
80 ns
其他特性
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT
JESD-30 代码
R-PDSO-J28
长度
18.41 mm
内存密度
1048576 bit
内存集成电路类型
VIDEO DRAM
内存宽度
4
功能数量
1
端口数量
2
端子数量
28
字数
262144 words
字数代码
256000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
256KX4
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
SOJ
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
认证状态
Not Qualified
刷新周期
512
座面最大高度
3.75 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子形式
J BEND
端子节距
1.27 mm
端子位置
DUAL
宽度
10.16 mm
Base Number Matches
1
文档预览
E2L0013-17-Y1
¡ Semiconductor
¡ Semiconductor
MSM514262
262,144-Word
¥
4-Bit Multiport DRAM
This version: Jan. 1998
MSM514262
Previous version: Dec. 1996
DESCRIPTION
The MSM514262 is an 1-Mbit CMOS multiport DRAM composed of a 262,144-word by 4-bit
dynamic RAM and a 512-word by 4-bit SAM. Its RAM and SAM operate independently and
asynchronously.
The MSM514262 supports three types of operation : random access to RAM port, high speed
serial access to SAM port and bidirectional transfer of data between any selected row in the
RAM port and the SAM port. In addition to the conventional multiport DRAM operating
modes, the MSM514262 features the block write and flash write functions on the RAM port and
a split data transfer capability on the SAM port. The SAM port requires no refresh operation
because it uses static CMOS flip-flops.
FEATURES
• Single power supply: 5 V
±10%
• Full TTL compatibility
• Multiport organization
RAM: 256K word
¥
4 bits
SAM: 512 word
¥
4 bits
• Fast page mode
• Write per bit
• Masked flash write
• Masked block write
•
RAS
only refresh
•
CAS
before
RAS
refresh
• Hidden refresh
• Serial read/write
• 512 tap location
• Bidirectional data transfer
• Split transfer
• Masked write transfer
• Refresh: 512 cycles/8 ms
• Package options:
28-pin 400 mil plastic ZIP (ZIP28-P-400-1.27)
28-pin 400 mil plastic SOJ (SOJ28-P-400-1.27)
(Product : MSM514262-xxZS)
(Product : MSM514262-xxJS)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM514262-70
MSM514262-80
MSM514262-10
Access Time
RAM
70 ns
80 ns
100 ns
SAM
25 ns
25 ns
25 ns
Cycle Time
RAM
140 ns
150 ns
180 ns
SAM
30 ns
30 ns
30 ns
Power Dissipation
Operating
120 mA
110 mA
100 mA
Standby
8 mA
8 mA
8 mA
1/45
¡ Semiconductor
PIN CONFIGURATION (TOP VIEW)
DSF
W4/IO4
SIO3
V
SS
SIO1
1
3
5
7
9
2
4
6
8
W3/IO3
SE
SIO4
SC
10 SIO2
DT/OE
11
W2/IO2 13
NC 15
A8 17
A5 19
V
CC
21
A3 23
A1 25
QSF 27
12 W1/IO1
14
WB/WE
16
RAS
18 A6
20 A4
22 A7
24 A2
26 A0
28
CAS

SC 1
28 V
SS
SIO1 2
27 SIO4
SIO2 3
26 SIO3
25
SE
DT/OE
4
W1/IO1 5
W2/IO2 6
WB/WE
7
NC 8
RAS
9
24 W4/IO4
23 W3/IO3
22 DSF
20 QSF
19 A0
18 A1
17 A2
16 A3
15 A7
21
CAS
A8 10
A6 11
A5 12
A4 13
V
CC
14
28-Pin Plastic SOJ
MSM514262
28-Pin Plastic ZIP
Pin Name
A0 - A8
RAS
CAS
DT/OE
WB/WE
DSF
W1/IO1 - W4/IO4
SC
SE
SIO1 - SIO4
QSF
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Column Address Strobe
Transfer/Output Enable
Mask/Write Enable
Special Function Input
RAM Inputs/Outputs
Serial Clock
SAM Port Enable
SAM Inputs/Ourputs
Special Function Output
Power Supply (5 V)
Ground (0 V)
No Connection
2/45
BLOCK DIAGRAM
¡ Semiconductor
Column
Address
Buffer
Block Write
Control
I/O Control
Color Register
Mask Register
RAM Output
Buffer
Flash Write
Control
W1/IO1
- W4/IO4
RAM Input
Buffer
Column Mask
Register
Column Decoder
Sense Amp.
Row Decoder
Row
Address
Buffer
512
¥
512
¥
4
RAM ARRAY
A0 - A8
RAS
CAS
Timing
Generator
Refresh
Counter
Gate
SAM
SAM Output
Buffer
SIO1
- SIO4
Gate
SAM Input
Buffer
SAM
DT/OE
WB/WE
DSF
SC
SE
V
CC
V
SS
Serial Decoder
SAM
Address
Buffer
QSF
SAM Address
Counter
MSM514262
3/45
¡ Semiconductor
MSM514262
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Input Output Voltage
Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
T
opr
T
stg
Condition
Ta = 25°C
Ta = 25°C
Ta = 25°C
—
—
Rating
–1.0 to 7.0
50
1
0 to 70
–55 to 150
(Note: 16)
Unit
V
mA
W
°C
°C
Recommended Operating Condition
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
IH
V
IL
Min.
4.5
2.4
–1.0
Typ.
5.0
—
—
(Ta = 0°C to 70°C) (Note: 17)
Max.
5.5
6.5
0.8
Unit
V
V
V
Capacitance
Parameter
Input Capacitance
Input/Output Capacitance
Output Capacitance
Symbol
C
I
C
I/O
C
O
(QSF)
Min.
—
—
—
(V
CC
= 5 V ±10%, f = 1 MHz, Ta = 25°C)
Max.
7
9
9
Unit
pF
pF
pF
Note:
This parameter is periodically sampled and is not 100% tested.
DC Characteristics 1
Parameter
Output "H" Level Voltage
Output "L" Level Voltage
Input Leakage Current
Symbol
V
OH
V
OL
I
LI
Condition
I
OH
= –2 mA
I
OL
= 2 mA
0
£
V
IN
£
V
CC
All other pins not
under test = 0 V
Output Leakage Current
I
LO
0
£
V
OUT
£
5.5 V
Output Disable
–10
10
–10
10
mA
Min.
2.4
—
Max.
—
0.4
Unit
V
4/45
¡ Semiconductor
DC Characteristics 2
Item (RAM)
Operating Current
(RAS,
CAS
Cycling, t
RC
= t
RC
min.)
Standby Current
(RAS,
CAS
= V
IH
)
RAS
Only Refresh Current
(RAS Cycling,
CAS
= V
IH
, t
RC
= t
RC
min.)
Page Mode Current
(RAS = V
IL
,
CAS
Cycling, t
PC
= t
PC
min.)
CAS
before
RAS
Refresh Current
(RAS Cycling,
CAS
before
RAS,
t
RC
= t
RC
min.)
Data Transfer Current
(RAS,
CAS
Cycling, t
RC
= t
RC
min.)
Flash Write Current
(RAS,
CAS
Cycling, t
RC
= t
RC
min.)
Block Write Current
(RAS,
CAS
Cycling, t
RC
= t
RC
min.)
SAM
Standby
Active
Standby
Active
Standby
Active
Standby
Active
Standby
Active
Standby
Active
Standby
Active
Standby
Active
Symbol
I
CC1
I
CC1A
I
CC2
I
CC2A
I
CC3
I
CC3A
I
CC4
I
CC4A
I
CC5
I
CC5A
I
CC6
I
CC6A
I
CC7
I
CC7A
I
CC8
I
CC8A
MSM514262
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
-70
85
120
8
50
85
120
70
120
85
120
85
120
85
120
85
120
-80
75
110
8
45
75
110
65
110
75
110
75
110
75
110
75
110
-10
65
100
8
40
65
100
60
100
65
100
65
100
65
100
65
100
mA
Max. Max. Max.
Unit Note
1, 2
1, 2
3
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
5/45
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参数对比
与MSM514262-80JS相近的元器件有：MSM514262-10、MSM514262-10JS、MSM514262-80ZS、MSM514262-80、MSM514262-70ZS、MSM514262-70JS、MSM514262-70、MSM514262-10ZS、MSM514262。描述及对比如下：
型号 MSM514262-80JS MSM514262-10 MSM514262-10JS MSM514262-80ZS MSM514262-80 MSM514262-70ZS MSM514262-70JS MSM514262-70 MSM514262-10ZS MSM514262
描述 262,144-Word x 4-Bit Multiport DRAM 262,144-Word x 4-Bit Multiport DRAM 262,144-Word x 4-Bit Multiport DRAM 262,144-Word x 4-Bit Multiport DRAM 262,144-Word x 4-Bit Multiport DRAM 262,144-Word x 4-Bit Multiport DRAM 262,144-Word x 4-Bit Multiport DRAM 262,144-Word x 4-Bit Multiport DRAM 262,144-Word x 4-Bit Multiport DRAM 262,144-Word x 4-Bit Multiport DRAM
厂商名称 OKI - OKI OKI - OKI OKI - OKI -
零件包装代码 SOJ - SOJ ZIP - ZIP SOJ - ZIP -
包装说明 SOJ, - SOJ, ZIP, - ZIP, SOJ, - ZIP, -
针数 28 - 28 28 - 28 28 - 28 -
Reach Compliance Code unknown - unknown unknown - unknown unknown - unknown -
ECCN代码 EAR99 - EAR99 EAR99 - EAR99 EAR99 - EAR99 -
访问模式 FAST PAGE - FAST PAGE FAST PAGE - FAST PAGE FAST PAGE - FAST PAGE -
最长访问时间 80 ns - 100 ns 80 ns - 70 ns 70 ns - 100 ns -
其他特性 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT - RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT - RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT - RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT -
JESD-30 代码 R-PDSO-J28 - R-PDSO-J28 R-PZIP-T28 - R-PZIP-T28 R-PDSO-J28 - R-PZIP-T28 -
长度 18.41 mm - 18.41 mm 36 mm - 36 mm 18.41 mm - 36 mm -
内存密度 1048576 bit - 1048576 bit 1048576 bit - 1048576 bit 1048576 bit - 1048576 bit -
内存集成电路类型 VIDEO DRAM - VIDEO DRAM VIDEO DRAM - VIDEO DRAM VIDEO DRAM - VIDEO DRAM -
内存宽度 4 - 4 4 - 4 4 - 4 -
功能数量 1 - 1 1 - 1 1 - 1 -
端口数量 2 - 2 2 - 2 2 - 2 -
端子数量 28 - 28 28 - 28 28 - 28 -
字数 262144 words - 262144 words 262144 words - 262144 words 262144 words - 262144 words -
字数代码 256000 - 256000 256000 - 256000 256000 - 256000 -
工作模式 ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS -
最高工作温度 70 °C - 70 °C 70 °C - 70 °C 70 °C - 70 °C -
组织 256KX4 - 256KX4 256KX4 - 256KX4 256KX4 - 256KX4 -
输出特性 3-STATE - 3-STATE 3-STATE - 3-STATE 3-STATE - 3-STATE -
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY -
封装代码 SOJ - SOJ ZIP - ZIP SOJ - ZIP -
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR - RECTANGULAR -
封装形式 SMALL OUTLINE - SMALL OUTLINE IN-LINE - IN-LINE SMALL OUTLINE - IN-LINE -
认证状态 Not Qualified - Not Qualified Not Qualified - Not Qualified Not Qualified - Not Qualified -
刷新周期 512 - 512 512 - 512 512 - 512 -
座面最大高度 3.75 mm - 3.75 mm 10.16 mm - 10.16 mm 3.75 mm - 10.16 mm -
最大供电电压 (Vsup) 5.5 V - 5.5 V 5.5 V - 5.5 V 5.5 V - 5.5 V -
最小供电电压 (Vsup) 4.5 V - 4.5 V 4.5 V - 4.5 V 4.5 V - 4.5 V -
标称供电电压 (Vsup) 5 V - 5 V 5 V - 5 V 5 V - 5 V -
表面贴装 YES - YES NO - NO YES - NO -
技术 CMOS - CMOS CMOS - CMOS CMOS - CMOS -
温度等级 COMMERCIAL - COMMERCIAL COMMERCIAL - COMMERCIAL COMMERCIAL - COMMERCIAL -
端子形式 J BEND - J BEND THROUGH-HOLE - THROUGH-HOLE J BEND - THROUGH-HOLE -
端子节距 1.27 mm - 1.27 mm 1.27 mm - 1.27 mm 1.27 mm - 1.27 mm -
端子位置 DUAL - DUAL ZIG-ZAG - ZIG-ZAG DUAL - ZIG-ZAG -
宽度 10.16 mm - 10.16 mm 2.8 mm - 2.8 mm 10.16 mm - 2.8 mm -
Base Number Matches 1 - 1 1 - 1 1 - 1 -
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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