E2L0015-17-Y1
¡ Semiconductor
¡ Semiconductor
MSM518122
131,072-Word
¥
8-Bit Multiport DRAM
This version: Jan. 1998
MSM518122
Previous version: Dec. 1996
DESCRIPTION
The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit
dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and
asynchronously.
The MSM518122 supports three types of operation : random access to RAM port, high speed
serial access to SAM port and bidirectional transfer of data between any selected row in the
RAM port and the SAM port. In addition to the conventional multiport DRAM operating
modes, the MSM518122 features the block write and flash write functions on the RAM port and
a split data transfer capability on the SAM port. The SAM port requires no refresh operation
because it uses static CMOS flip-flops.
FEATURES
• Single power supply: 5 V
±10%
• Full TTL compatibility
• Multiport organization
RAM: 128K word
¥
8 bits
SAM: 256 word
¥
8 bits
• Fast page mode
• Write per bit
• Masked flash write
• Masked block write
•
RAS
only refresh
•
CAS
before
RAS
refresh
• Hidden refresh
• Serial read/write
• 256 tap location
• Bidirectional data transfer
• Split transfer
• Masked write transfer
• Refresh: 512 cycles/8 ms
• Package options:
40-pin 475 mil plastic ZIP (ZIP40-P-475-1.27)
40-pin 400 mil plastic SOJ (SOJ40-P-400-1.27)
(Product : MSM518122-xxZS)
(Product : MSM518122-xxJS)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM518122-70
MSM518122-80
MSM518122-10
Access Time
RAM
70 ns
80 ns
100 ns
SAM
25 ns
25 ns
25 ns
Cycle Time
RAM
140 ns
150 ns
180 ns
SAM
30 ns
30 ns
30 ns
Power Dissipation
Operating
120 mA
110 mA
100 mA
Standby
8 mA
8 mA
8 mA
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¡ Semiconductor
MSM518122
PIN CONFIGURATION (TOP VIEW)
W5/IO5
W7/IO7
SE
SIO6
SIO8
1
3
5
7
9
SC 1
2
4
6
8
W6/IO6
W8/IO8
SIO5
SIO7
SIO1 2
SIO2 3
SIO3 4
SIO4 5
DT/OE
6
W1/IO1 7
W2/IO2 8
W3/IO3 9
W4/IO4 10
V
CC1
11
WB/WE
12
NC 13
RAS
14
NC 15
A8 16
A6 17
A5 18
A4 19
V
CC2
20
SC 11
SIO2 13
SIO4 15
W1/IO1 17
W3/IO3 19
W4/IO4 21
WB/WE
23
A8 25
V
SS2
27
A5 29
NC 31
A7 33
A2 35
A0 37
CAS
39
10 V
SS1
12 SIO1
14 SIO3
16
DT/OE
18 W2/IO2
20 NC
22 V
CC1
24
RAS
26 A6
28 NC
30 A4
32 V
CC2
34 A3
36 A1
38 QSF
40 DSF
40-Pin Plastic SOJ
40 V
SS1
39 SIO8
38 SIO7
37 SIO6
36 SIO5
35
SE
34 W8/IO8
33 W7/IO7
32 W6/IO6
31 W5/IO5
30 V
SS2
29 DSF
28 NC
27
CAS
26 QSF
25 A0
24 A1
23 A2
22 A3
21 A7
40-Pin Plastic ZIP
Pin Name
A0 - A8
W1/IO1 - W8/IO8
SIO1 - SIO8
RAS
CAS
WB/WE
DT/OE
Function
Address Input
RAM Inputs/Outputs
SAM Inputs/Outputs
Row Address Strobe
Column Address Strobe
Write per Bit/Write Enable
Transfer/Output Enable
Pin Name
SC
SE
DSF
QSF
V
CC
V
SS
NC
Function
Serial Clock
SAM Port Enable
Special Function Input
Special Function Output
Power Supply (5 V)
Ground (0 V)
No Connection
Note :
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
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¡ Semiconductor
BLOCK DIAGRAM
Column
Address
Buffer
Column Decoder
Sense Amp.
Block Write
Control
I/O Control
Column Mask
Register
Color Register
Mask Register
RAM Input
Buffer
W1/IO1
- W8/IO8
RAM Output
Buffer
Row Decoder
Row
Address
Buffer
A0 - A8
Refresh
Counter
512
¥
256
¥
8
RAM ARRAY
Flash Write
Control
SAM Input
Buffer
SAM Output
Buffer
Gate
SAM
Gate
SAM
SIO1
- SIO8
Timing
Generator
RAS
CAS
DT/OE
WB/WE
DSF
SC
SE
V
CC
V
SS
Serial Decoder
SAM
Address
Buffer
SAM Address
Counter
QSF
MSM518122
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¡ Semiconductor
MSM518122
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Input Output Voltage
Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
T
opr
T
stg
Condition
Ta = 25°C
Ta = 25°C
Ta = 25°C
—
—
Rating
–1.0 to 7.0
50
1
0 to 70
–55 to 150
(Note: 16)
Unit
V
mA
W
°C
°C
Recommended Operating Condition
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
IH
V
IL
Min.
4.5
2.4
–1.0
Typ.
5.0
—
—
(Ta = 0°C to 70°C) (Note: 17)
Max.
5.5
6.5
0.8
Unit
V
V
V
Capacitance
Parameter
Input Capacitance
Input/Output Capacitance
Output Capacitance
Symbol
C
I
C
I/O
C
O
(QSF)
Min.
—
—
—
(V
CC
= 5 V ±10%, f = 1 MHz, Ta = 25°C)
Max.
7
9
9
Unit
pF
pF
pF
Note:
This parameter is periodically sampled and is not 100% tested.
DC Characteristics 1
Parameter
Output "H" Level Voltage
Output "L" Level Voltage
Input Leakage Current
Symbol
V
OH
V
OL
I
LI
Condition
I
OH
= –2 mA
I
OL
= 2 mA
0
£
V
IN
£
V
CC
All other pins not
under test = 0 V
Output Leakage Current
I
LO
0
£
V
OUT
£
5.5 V
Output Disable
–10
10
–10
10
mA
Min.
2.4
—
Max.
—
0.4
Unit
V
4/45
¡ Semiconductor
DC Characteristics 2
Item (RAM)
Operating Current
(RAS,
CAS
Cycling, t
RC
= t
RC
min.)
Standby Current
(RAS,
CAS
= V
IH
)
RAS
Only Refresh Current
(RAS Cycling,
CAS
= V
IH
, t
RC
= t
RC
min.)
Page Mode Current
(RAS = V
IL
,
CAS
Cycling, t
PC
= t
PC
min.)
CAS
before
RAS
Refresh Current
(RAS Cycling,
CAS
before
RAS,
t
RC
= t
RC
min.)
Data Transfer Current
(RAS,
CAS
Cycling, t
RC
= t
RC
min.)
Flash Write Current
(RAS,
CAS
Cycling, t
RC
= t
RC
min.)
Block Write Current
(RAS,
CAS
Cycling, t
RC
= t
RC
min.)
SAM
Standby
Active
Standby
Active
Standby
Active
Standby
Active
Standby
Active
Standby
Active
Standby
Active
Standby
Active
Symbol
I
CC1
I
CC1A
I
CC2
I
CC2A
I
CC3
I
CC3A
I
CC4
I
CC4A
I
CC5
I
CC5A
I
CC6
I
CC6A
I
CC7
I
CC7A
I
CC8
I
CC8A
MSM518122
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
-70
85
120
8
50
85
120
70
120
85
120
85
120
85
120
85
120
-80
75
110
8
45
75
110
65
110
75
110
75
110
75
110
75
110
-10
65
100
8
40
65
100
60
100
65
100
65
100
65
100
65
100
mA
Max. Max. Max.
Unit Note
1, 2
1, 2
3
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
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