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MSM519200-60SJ

描述：
Fast Page DRAM, 4MX2, 60ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24
分类：
存储    存储   
文件大小：
508KB，共18页
制造商：
LAPIS Semiconductor Co Ltd
概述
Fast Page DRAM, 4MX2, 60ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
LAPIS Semiconductor Co Ltd
零件包装代码
SOJ
包装说明
SOJ, SOJ24/26,.34
针数
24
Reach Compliance Code
unknown
ECCN代码
EAR99
访问模式
FAST PAGE
最长访问时间
60 ns
其他特性
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型
COMMON
JESD-30 代码
R-PDSO-J24
JESD-609代码
e0
长度
17.15 mm
内存密度
8388608 bit
内存集成电路类型
FAST PAGE DRAM
内存宽度
2
功能数量
1
端口数量
1
端子数量
24
字数
4194304 words
字数代码
4000000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
4MX2
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
SOJ
封装等效代码
SOJ24/26,.34
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
NOT SPECIFIED
电源
5 V
认证状态
Not Qualified
刷新周期
2048
座面最大高度
3.55 mm
最大待机电流
0.001 A
最大压摆率
0.08 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
J BEND
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
7.62 mm
文档预览
Dear customers,
About the change in the name such as "Oki Electric Industry Co. Ltd." and
"OKI" in documents to OKI Semiconductor Co., Ltd.
The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI
Semiconductor Co., Ltd. on October 1, 2008.
Therefore, please accept that although
the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".
It is a change of the company name, the company trademark, and the logo, etc. , and
NOT a content change in documents.
October 1, 2008
OKI Semiconductor Co., Ltd.
550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan
http://www.okisemi.com/en/
E2G0029-17-41
¡ Semiconductor
MSM519200
¡ Semiconductor
This version: Jan. 1998
MSM519200
Previous version: May 1997
4,194,304-Word
¥
2-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM519200 is a 4,194,304-word
¥
2-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM519200 achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer
metal CMOS process. The MSM519200 is available in a 26/24-pin plastic SOJ or 26/24-pin plastic
TSOP.
FEATURES
• 4,194,304-word
¥
2-bit configuration
• Single 5 V power supply,
±10%
tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 2048 cycles/32 ms
• Fast page mode, read modify write capability
•
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
• Multi-bit test mode capability
• Package options:
26/24-pin 300 mil plastic SOJ (SOJ26/24-P-300-1.27) (Product : MSM519200-xxSJ)
26/24-pin 300 mil plastic TSOP (TSOPII26/24-P-300-1.27-K) (Product : MSM519200-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM519200-60
MSM519200-70
MSM519200-80
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
60 ns 30 ns 15 ns 15 ns
70 ns 35 ns 20 ns 20 ns
80 ns 40 ns 20 ns 20 ns
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
110 ns
130 ns
150 ns
440 mW
413 mW
385 mW
5.5 mW
1/17
¡ Semiconductor
PIN CONFIGURATION (TOP VIEW)
V
CC
1

26 V
SS
25 NC
V
CC
1
DQ1 2
WE
4
NC 6
DQ1 2
WE
4
NC 6
DQ2 3
24
CAS1
23
CAS2
22
OE
21 A9
19 A8
DQ2 3
RAS
5
RAS
5
A10 8
A0 9
A10 8
18 A7
17 A6
16 A5
15 A4
14 V
SS
A0 9
A1 10
A2 11
A3 12
V
CC
13
A1 10
A2 11
A3 12
V
CC
13
26/24-Pin Plastic SOJ
Pin Name
A0 - A10
RAS
CAS1, CAS2
DQ1, DQ2
OE
WE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (5 V)
Ground (0 V)
No Connection
MSM519200
26 V
SS
25 NC
24
CAS1
23
CAS2
22
OE
21 A9
19 A8
18 A7
17 A6
16 A5
15 A4
14 V
SS
26/24-Pin Plastic TSOP
(K Type)
Note :
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
2/17
¡ Semiconductor
MSM519200
BLOCK DIAGRAM
Timing
Generator
Timing
Generator
RAS
CAS1
CAS2
11
Column
Address
Buffers
Internal
Address
Counter
11
Column
Decoders
Write
Clock
Generator
WE
OE
2
Output
Buffers
2
2
A0 - A10
Refresh
Control Clock
Sense
Amplifiers
2
I/O
Selector
2
2
DQ1, DQ2
Input
Buffers
2
11
Row
Address
Buffers
11
Row
De-
coders
Word
Drivers
Memory
Cells
V
CC
On Chip
V
BB
Generator
V
SS
FUNCTION TABLE
Input Pin
RAS
H
L
L
L
L
L
L
L
L
CAS1
*
H
L
H
L
L
H
L
L
CAS2
*
H
H
L
L
H
L
L
L
WE
*
*
H
H
H
L
L
L
H
OE
*
*
L
L
L
H
H
H
H
DQ1
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
Don't Care
D
IN
High-Z
DQ Pin
DQ2
High-Z
High-Z
High-Z
D
OUT
D
OUT
Don't Care
D
IN
D
IN
High-Z
Function Mode
Standby
Refresh
DQ1 Read
DQ2 Read
DQ1, DQ2 Read
DQ1 Write
DQ2 Write
DQ1, DQ2 Write
—
*: "H" or "L"
3/17
¡ Semiconductor
MSM519200
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
*
T
opr
T
stg
Rating
–1.0 to 7.0
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.5
0
2.4
–1.0
Typ.
5.0
0
—
—
Max.
5.5
0
6.5
0.8
(Ta = 0°C to 70°C)
Unit
V
V
V
V
Capacitance
Parameter
Input Capacitance (A0 - A10)
Input Capacitance
(RAS,
CAS1, CAS2, WE, OE)
Output Capacitance (DQ1, DQ2)
Symbol
C
IN1
C
IN2
C
I/O
Typ.
—
—
—
(V
CC
= 5 V ±10%, Ta = 25°C, f = 1 MHz)
Max.
6
7
10
Unit
pF
pF
pF
4/17
查看更多>
参数对比
与MSM519200-60SJ相近的元器件有：MSM519200-70TS-K、MSM519200-70SJ、RBAQ16TTEB2701DEFT、RBAQ16TTEB2701FCCT、MSM519200-60TS-K。描述及对比如下：
型号 MSM519200-60SJ MSM519200-70TS-K MSM519200-70SJ RBAQ16TTEB2701DEFT RBAQ16TTEB2701FCCT MSM519200-60TS-K
描述 Fast Page DRAM, 4MX2, 60ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24 Fast Page DRAM, 4MX2, 70ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-26/24 Fast Page DRAM, 4MX2, 70ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24 Array/Network Resistor, Bussed, Thin Film, 0.8W, 2700ohm, 100V, 0.5% +/-Tol, -25,25ppm/Cel, 1915, Array/Network Resistor, Bussed, Thin Film, 0.8W, 2700ohm, 100V, 1% +/-Tol, -50,50ppm/Cel, 1915, Fast Page DRAM, 4MX2, 60ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-26/24
是否Rohs认证 不符合 不符合 不符合 符合 符合 不符合
Reach Compliance Code unknown unknow unknown compliant compliant unknown
JESD-609代码 e0 e0 e0 e3 e3 e0
端子数量 24 24 24 16 16 24
最高工作温度 70 °C 70 °C 70 °C 125 °C 125 °C 70 °C
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR PACKAGE RECTANGULAR PACKAGE RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMT SMT SMALL OUTLINE, THIN PROFILE
技术 CMOS CMOS CMOS THIN FILM THIN FILM CMOS
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin (Sn) - hot dipped Tin (Sn) - hot dipped Tin/Lead (Sn/Pb)
零件包装代码 SOJ TSOP2 SOJ - - TSOP2
包装说明 SOJ, SOJ24/26,.34 TSOP2, TSOP24/26,.36 SOJ, SOJ24/26,.34 - - TSOP2, TSOP24/26,.36
针数 24 26 24 - - 26
ECCN代码 EAR99 EAR99 EAR99 - EAR99 EAR99
访问模式 FAST PAGE FAST PAGE FAST PAGE - - FAST PAGE
最长访问时间 60 ns 70 ns 70 ns - - 60 ns
其他特性 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH - - RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型 COMMON COMMON COMMON - - COMMON
JESD-30 代码 R-PDSO-J24 R-PDSO-G24 R-PDSO-J24 - - R-PDSO-G24
长度 17.15 mm 17.14 mm 17.15 mm - - 17.14 mm
内存密度 8388608 bit 8388608 bi 8388608 bit - - 8388608 bit
内存集成电路类型 FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM - - FAST PAGE DRAM
内存宽度 2 2 2 - - 2
功能数量 1 1 1 - - 1
端口数量 1 1 1 - - 1
字数 4194304 words 4194304 words 4194304 words - - 4194304 words
字数代码 4000000 4000000 4000000 - - 4000000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS - - ASYNCHRONOUS
组织 4MX2 4MX2 4MX2 - - 4MX2
输出特性 3-STATE 3-STATE 3-STATE - - 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - - PLASTIC/EPOXY
封装代码 SOJ TSOP2 SOJ - - TSOP2
封装等效代码 SOJ24/26,.34 TSOP24/26,.36 SOJ24/26,.34 - - TSOP24/26,.36
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - NOT SPECIFIED
电源 5 V 5 V 5 V - - 5 V
认证状态 Not Qualified Not Qualified Not Qualified - - Not Qualified
刷新周期 2048 2048 2048 - - 2048
座面最大高度 3.55 mm 1.2 mm 3.55 mm - - 1.2 mm
最大待机电流 0.001 A 0.001 A 0.001 A - - 0.001 A
最大压摆率 0.08 mA 0.075 mA 0.075 mA - - 0.08 mA
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V - - 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V - - 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V - - 5 V
表面贴装 YES YES YES - - YES
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL - - COMMERCIAL
端子形式 J BEND GULL WING J BEND - - GULL WING
端子节距 1.27 mm 1.27 mm 1.27 mm - - 1.27 mm
端子位置 DUAL DUAL DUAL - - DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - NOT SPECIFIED
宽度 7.62 mm 7.62 mm 7.62 mm - - 7.62 mm
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器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
索引文件:
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