Dear customers,
About the change in the name such as "Oki Electric Industry Co. Ltd." and
"OKI" in documents to OKI Semiconductor Co., Ltd.
The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI
Semiconductor Co., Ltd. on October 1, 2008.
Therefore, please accept that although
the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".
It is a change of the company name, the company trademark, and the logo, etc. , and
NOT a content change in documents.
October 1, 2008
OKI Semiconductor Co., Ltd.
550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan
http://www.okisemi.com/en/
OKI Semiconductor
MSM51V16400F
4,194,304-Word
×
4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
FEDD51V16400F-02
Issue Date: Jul. 19, 2005
DESCRIPTION
The MSM51V16400F is a 4,194,304-word
×
4-bit dynamic RAM fabricated in Oki’s silicon-gate
CMOS technology. The MSM51V16160F achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer
polysilicon/double-layer metal CMOS process. The MSM51V16400F is available in a 26/24-pin plastic
TSOP.
FEATURES
·
4,194,304-word
×
4-bit configuration
·
Single 3.3V power supply,
±0.3V
tolerance
·
Input : LVTTL compatible, low input capacitance
·
Output : LVTTL compatible, 3-state
·
Refresh : 4096 cycles/64ms
·
Fast page mode, read modify write capability
·
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
· Packages
26/24-pin 300mil plastic TSOP
(
TSOPII26/24-P-300-1.27-K
)
(Product : MSM51V16400F-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Access Time (Max.)
Family
t
RAC
50ns
60ns
70ns
t
AA
25ns
30ns
35ns
t
CAC
13ns
15ns
20ns
t
OEA
13ns
15ns
20ns
Cycle Time
(Min.)
90ns
110ns
130ns
Power Dissipation
Operating
(Max.)
270mW
252mW
234mW
1.8mW
Standby
(Max.)
MSM51V16400F
1/15
FEDD51V16400F-02
1
Semiconductor
MSM51V16400F
PIN CONFIGURATION (TOP VIEW)
V
CC
DQ1
DQ2
WE
RAS
A11R
1
2
3
4
5
6
26
25
24
23
22
21
19
18
17
16
15
14
V
SS
DQ4
DQ3
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
A10R 8
A0 9
A1 10
A2 11
A3 12
V
CC
13
26/24-Pin Plastic TSOP
(K Type)
Pin Name
A0–A9, A10R,A11R
RAS
CAS
DQ1–DQ4
OE
WE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (3.3V)
Ground (0V)
No Connection
Note : The same power supply voltage must be provided to every V
CC
pin, and the same GND voltage level must
be provided to every V
SS
pin.
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FEDD51V16400F-02
1
Semiconductor
MSM51V16400F
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on Any Pin Relative to V
SS
Voltage V
CC
Supply relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
IN
, V
OUT
V
CC
I
OS
P
D*
T
opr
T
stg
Value
–0.5 to V
CC
+ 0.5
–0.5 to 4.6
50
1
0 to 70
–55 to 150
Unit
V
V
mA
W
°C
°C
*: Ta = 25°C
RECOMMENDED OPERATIING CONDITIONS
(Ta = 0 to 70°C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
3.0
0
2.0
−
0.3
*2
Typ.
3.3
0
Max.
3.6
0
V
CC
+ 0.3
0.8
*1
Unit
V
V
V
V
Notes: *1. The input voltage is V
CC
+ 1.0V when the pulse width is less than 20ns (the pulse width is with respect
to the point at which V
CC
is applied).
*2. The input voltage is V
SS
−
1.0V when the pulse width is less than 20ns (the pulse width respect to the
point at which V
SS
is applied).
PIN CAPACITANCE
(Vcc = 3.3V
±
0.3V, Ta = 25°C, f = 1 MHz)
Parameter
Input Capacitance (A0 – A9, A10R, A11R)
Input Capacitance
(RAS,
CAS, WE, OE)
Output Capacitance (DQ1 – DQ4)
Symbol
C
IN1
C
IN2
C
I/O
Min.
—
—
—
Max.
5
7
7
Unit
pF
pF
pF
3/15
FEDD51V16400F-02
1
Semiconductor
MSM51V16400F
DC CHARACTERISTICS
(V
CC
= 3.3V
±
0.3V, Ta = 0 to 70°C)
MSM51V16400 MSM51V16400 MSM51V16400
F-50
F-60
F-70
Unit Note
Min.
Output High Voltage
Output Low Voltage
Input Leakage
Current
Output Leakage
Current
Average Power
Supply Current
(Operating)
Power Supply
Current
(Standby)
Average Power
Supply Current
(RAS-only Refresh)
Power Supply
Current
(Standby)
Average Power
Supply Current
(CAS before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
V
OH
V
OL
I
OH
=
−2.0mA
I
OL
= 2.0mA
0V
≤
V
I
≤
V
CC
+ 0.3V;
I
LI
All other pins not
under test = 0V
DQ disable
0V
≤
V
O
≤
V
CC
RAS, CAS
cycling,
t
RC
= Min.
RAS, CAS
= V
IH
I
CC2
RAS, CAS
≥
V
CC
−
0.2V
RAS
cycling,
I
CC3
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
I
CC5
CAS
= V
IL
,
DQ = enable
RAS
= cycling,
CAS
before
RAS
RAS
= V
IL
,
I
CC7
CAS
cycling,
t
PC
= Min.
70
65
60
mA
1,3
5
5
5
mA
1
75
70
65
mA
1,2
−
10
10
−
10
10
−
10
10
µA
2.4
0
Max.
V
CC
0.4
Min.
2.4
0
Max.
V
CC
0.4
Min.
2.4
0
Max.
V
CC
0.4
V
V
Parameter
Symbol
Condition
I
LO
−
10
10
−
10
10
−
10
10
µA
I
CC1
75
70
65
mA
1,2
2
0.5
2
0.5
2
mA
0.5
1
I
CC6
75
70
65
mA
1,2
Notes: 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while
RAS
= V
IL
.
3. The address can be changed once or less while
CAS
= V
IH
.
4/15
电源技术