FEDD51V17400J-01
Issue Date: Mar. 31, 2011
MSM51V17400J
4,194,304-Word
4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM51V17400J is a 4,194,304-word
4-bit dynamic RAM fabricated in OKI
SEMICONDUCTOR’s silicon-gate CMOS technology. The MSM51V17400J achieves high integration,
high-speed operation, and low-power consumption because OKI SEMICONDUCTOR manufactures
the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM51V17400J is
available in a 26/24-pin plastic SOJ, 26/24-pin plastic TSOP.
FEATURES
·
4,194,304-word
4-bit configuration
·
Single 3.3V power supply,
0.3V
tolerance
·
Input : LVTTL compatible, low input capacitance
·
Output : LVTTL compatible, 3-state
·
Refresh : 2048 cycles/32ms
·
Fast page mode, read modify write capability
·
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
· Packages
26/24-pin 300mil plastic SOJ
(
SOJ26/24-300-1.27
)
(Product : MSM51V17400J-xxSJ)
26/24-pin 300mil plastic TSOP
(
TSOPII26/24-300-1.27-3K
)
(Product : MSM51V17400J-xxTS-K)
xx indicates speed rank..
PRODUCT FAMILY
Access Time (Max.)
Family
t
RAC
50 ns
60 ns
70 ns
t
AA
25 ns
30 ns
35 ns
t
CAC
13 ns
15 ns
20 ns
t
OEA
13 ns
15 ns
20 ns
Cycle Time
(Min.)
90 ns
110 ns
130 ns
Power Dissipation
Operating
(Max.)
360mW
324mW
288mW
1.8mW
Standby
(Max.)
MSM51V17400J-50
MSM51V17400J-60
MSM51V17400J-70
1/15
FEDD51V17400J-01
MSM51V17400J
PIN CONFIGURATION (TOP VIEW)
V
CC
1
DQ1 2
DQ2 3
WE 4
RAS 5
NC 6
A10 8
A0 9
A1 10
A2 11
A3 12
V
CC
13
26 V
SS
25 DQ4
24 DQ3
23 CAS
22 OE
21 A9
19 A8
18 A7
17 A6
16 A5
15 A4
14 V
SS
V
CC
1
DQ1 2
DQ2 3
WE 4
RAS 5
NC 6
A10 8
A0 9
A1 10
A2 11
A3 12
V
CC
13
26 V
SS
25 DQ4
24 DQ3
23 CAS
22 OE
21 A9
19 A8
18 A7
17 A6
16 A5
15 A4
14 V
SS
26/24-Pin Plastic
SOJ
26/24-Pin Plastic TSOP
(K Type)
Pin Name
A0–A10
RAS
CAS
DQ1–DQ4
OE
WE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (3.3V)
Ground (0V)
No Connection
Note : The same power supply voltage must be provided to every V
CC
pin, and the same GND voltage level must
be provided to every V
SS
pin.
2/15
FEDD51V17400J-01
MSM51V17400J
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on Any Pin Relative to V
SS
Voltage V
CC
Supply relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
IN
, V
OUT
V
CC
I
OS
P
D*
T
opr
T
stg
Value
–0.5 to V
CC
+ 0.5
–0.5 to 4.6
50
1
0 to 70
–55 to 150
Unit
V
V
mA
W
°C
°C
*: Ta = 25C
RECOMMENDED OPERATING CONDITIONS
(Ta = 0 to 70°C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
3.0
0
2.0
0.3
*2
Typ.
3.3
0
Max.
3.6
0
V
CC
+ 0.3
*1
0.8
Unit
V
V
V
V
Notes: *1. The input voltage is V
CC
+ 1.0V when the pulse width is less than 20ns (the pulse width is with respect
to the point at which V
CC
is applied).
*2. The input voltage is V
SS
1.0V when the pulse width is less than 20ns (the pulse width respect to the
point at which V
SS
is applied).
PIN CAPACITANCE
(Vcc = 3.3V
0.3V, Ta = 25°C, f = 1 MHz)
Parameter
Input Capacitance (A0 – A10)
Input Capacitance
(RAS,
CAS, WE, OE)
Output Capacitance (DQ1 – DQ4)
Symbol
C
IN1
C
IN2
C
I/O
Min.
—
—
—
Min.
5
7
7
Unit
pF
pF
pF
3/15
FEDD51V17400J-01
MSM51V17400J
DC CHARACTERISTICS
(V
CC
= 3.3V
0.3V, Ta = 0 to 70°C)
MSM51V17400 MSM51V17400 MSM51V17400
J-50
J-60
J-70
Min.
Output High Voltage
Output Low Voltage
Input Leakage
Current
Output Leakage
Current
Average Power
Supply Current
(Operating)
Power Supply
Current
(Standby)
Average Power
Supply Current
(RAS-only Refresh)
Power Supply
Current
(Standby)
Average Power
Supply Current
(CAS before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
V
OH
V
OL
I
OH
=
2.0mA
I
OL
= 2.0mA
0V
V
I
V
CC
+0.3V;
I
LI
All other pins not
under test = 0V
DQ disable
0V
V
O
V
CC
RAS, CAS
cycling,
t
RC
= Min.
RAS, CAS
= V
IH
I
CC2
RAS, CAS
V
CC
0.2V
RAS
cycling,
I
CC3
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
I
CC5
CAS
= V
IL
,
DQ = enable
RAS
= cycling,
CAS
before
RAS
RAS
= V
IL
,
I
CC7
CAS
cycling,
t
PC
= Min.
75
70
65
mA
1,3
5
5
5
mA
1
100
90
80
mA
1,2
10
10
10
10
10
10
A
2.4
0
Max.
V
CC
0.4
Min.
2.4
0
Max
V
CC
0.4
Min.
2.4
0
Max.
V
CC
0.4
V
V
Parameter
Symbol
Condition
Unit Note
I
LO
10
10
10
10
10
10
A
I
CC1
100
90
80
mA
1,2
2
0.5
2
0.5
2
mA
0.5
1
I
CC6
100
90
80
mA
1,2
Notes: 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while
RAS
= V
IL
.
3. The address can be changed once or less while
CAS
= V
IH
.
4/15
FEDD51V17400J-01
MSM51V17400J
AC CHARACTERISTICS (1/2)
(V
CC
= 3.3V
0.3V, Ta = 0 to 70°C) Note1,2,3,11,12
Parameter
MSM51V17400
J-50
Symbol
Min.
Random Read or Write Cycle Time
Read Modify Write Cycle Time
Fast Page Mode Cycle Time
t
RC
t
RWC
t
PC
90
131
35
76
0
0
0
3
30
50
50
13
13
7
13
50
5
30
17
12
0
Max.
50
13
25
30
13
13
13
50
32
10,000
100,000
10,000
37
25
MSM51V17400
J-60
Min.
110
155
40
85
0
0
0
3
40
60
60
15
15
10
15
60
5
35
20
15
0
Max.
60
15
30
35
15
15
15
50
32
10,000
100,000
10,000
45
30
MSM51V17400
J-70
Min.
130
185
45
100
0
0
0
3
50
70
70
20
20
10
20
70
5
40
20
15
0
Max.
70
20
35
40
20
20
20
50
32
10,000
100,000
10,000
50
35
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5
6
4, 5, 6
4, 5
4, 6
4
4
4
7
7
3
Unit
Note
Fast Page Mode Read Modify Write
t
PRWC
Cycle Time
Access Time from
RAS
Access Time from
CAS
Access Time from Column Address
Access Time from
CAS
Precharge
Access Time from
OE
Output Low Impedance Time from
CAS
CAS
to Data Output Buffer Turn-
off Delay Time
OE
to Data Output Buffer Turn-off
Delay Time
Transition Time
Refresh Period
RAS
Precharge Time
RAS
Pulse Width
t
RAC
t
CAC
t
AA
t
CPA
t
OEA
t
CLZ
t
OFF
t
OEZ
t
T
t
REF
t
RP
t
RAS
RAS
Pulse Width (Fast Page Mode) t
RASP
RAS
Hold Time
RAS
Hold Time referenced to
OE
CAS
Precharge Time
(Fast Page Mode)
CAS
Pulse Width
CAS
Hold Time
CAS
to
RAS
Precharge Time
t
RSH
t
ROH
t
CP
t
CAS
t
CSH
t
CRP
RAS
Hold Time from
CAS
Precharge t
RHCP
RAS
to
CAS
Delay Time
RAS
to Column Address Delay Time
Row Address Set-up Time
t
RCD
t
RAD
t
ASR
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模拟电子