Semiconductor
MSM51V18160F
1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
This version:Oct.1999
DESCRIPTION
The MSM51V18160F is a 1,048,576-word
´
16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
technology. The MSM51V18160F achieves high integration, high-speed operation, and low-power consumption
because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The
MSM51V18160F is available in a 42-pin plastic SOJ or 50/44-pin plastic TSOP.
FEATURES
·
·
·
·
·
·
·
·
·
1,048,576-word
´
16-bit configuration
Single 3.3V power supply,
±0.3V
tolerance
Input
Output
Refresh
: LVTTL compatible, low input capacitance
: LVTTL compatible, 3-state
: 1024 cycles/16ms
Fast page mode, read modify write capability
CAS before RAS refresh, hidden refresh, RAS-only refresh capability
CAS before RAS self-refresh capability
Package options:
42-pin 400mil plastic SOJ
50/44-pin 400mil plastic TSOP
(SOJ42-P-400-1.27)
(TSOPII50/44-P-400-0.80-K)
(TSOPII50/44-P-400-0.80-L)
(Product : MSM51V18160F-xxJS)
(Product : MSM51V18160F-xxTS-K)
(Product : MSM51V18160F-xxTS-L)
xx indicates speed rank.
PRODUCT FAMILY
Access Time (Max.)
Family
t
RAC
50ns
MSM51V18165F
60ns
70ns
t
AA
25ns
30ns
35ns
t
CAC
13ns
15ns
20ns
t
OEA
13ns
15ns
20ns
Cycle Time
(Min.)
90ns
110ns
130ns
Power Dissipation
Operating (Max.)
450mW
414mW
378mW
1.8mW
Standby (Max.)
No.
1/14
PIN CONFIGRATION (TOP VIEW)
V
CC
DQ1
DQ2
DQ3
DQ4
V
CC
DQ5
DQ6
DQ7
DQ8
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
V
SS
DQ16
DQ15
DQ14
DQ13
V
SS
DQ12
DQ11
DQ10
DQ9
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V
SS
V
CC
DQ1
DQ2
DQ3
DQ4
V
CC
DQ5
DQ6
DQ7
DQ8
NC
1
2
3
4
5
6
7
8
9
10
11
50
49
48
47
46
45
44
43
42
41
40
V
SS
DQ16
DQ15
DQ14
DQ13
V
SS
DQ12
DQ11
DQ10
DQ9
NC
V
SS
DQ16
DQ15
DQ14
DQ13
V
SS
DQ12
DQ11
DQ10
DQ9
NC
50
49
48
47
46
45
44
43
42
41
40
1
2
3
4
5
6
7
8
9
10
11
V
CC
DQ1
DQ2
DQ3
DQ4
V
CC
DQ5
DQ6
DQ7
DQ8
NC
42-Pin Plastic SOJ
NC 15
NC 16
WE 17
RAS 18
NC 19
NC 20
A0 21
A1 22
A2 23
A3 24
V
CC
25
36
35
34
33
32
31
30
29
28
27
26
NC 36
NC
LCAS LCAS 35
UCAS UCAS 34
OE
OE 33
A9
A9 32
A8
A8 31
A7 30
A7
A6 29
A6
A5
A5 28
A4
A4 27
V
SS
26
V
SS
15
16
17
18
19
20
21
22
23
24
25
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
V
CC
55/44-Pin Plastic TSOP
(K Type)
55/44-Pin Plastic TSOP
(L Type)
Pin Name
A0–A9
RAS
LCAS
UCAS
DQ1–DQ16
OE
WE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Lower Byte Column Address Strobe
Upper Byte Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (3.3V)
Ground (0V)
No Connection
Note : The same power supply voltage must be provided to every V
CC
pin, and the same
GND voltage level must be provided to every V
SS
pin.
No.
2/14
BLOCK DIAGRAM
WE
RAS
LCAS
UCAS
Column
Address
Buffers
Internal
Address
Counter
Row
Address
Buffers
Timing
Generator
I/O
Controller
I/O
Controller
10
10
Column Decoders
8
Output
Buffers
8
OE
DQ1-DQ8
8
I/O
Selector
Input
Buffers
8
A0-A9
Refresh
Control Clock
Sense Amplifiers
16
16
Input
Buffers
8
10
10
Row
Deco-
ders
Word
Drivers
Memory
Cells
8
8
DQ9-DQ16
Output
Buffers
8
V
CC
On Chip
V
BB
Generator
On Chip
IV
CC
Generator
V
SS
FUNCTION TABLE
Input Pin
RAS
H
L
L
L
L
L
L
L
L
LCAS
*
H
L
H
L
L
H
L
L
UCAS
*
H
H
L
L
H
L
L
L
WE
*
*
H
H
H
L
L
L
H
OE
*
*
L
L
L
H
H
H
H
DQ Pin
Function Mode
DQ1-DQ8
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
Don’t Care
D
IN
High-Z
DQ9-DQ16
High-Z
High-Z
High-Z
D
OUT
D
OUT
Don’t Care
D
IN
D
IN
High-Z
Standby
Refresh
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
¾
* : “H” or “L”
No.
3/14
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Voltage V
CC
Supply relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
IN
, V
OUT
V
CC
I
OS
P
D*
T
opr
T
stg
Rating
-
0.5 to V
CC
+
0.5
-
0.5 to 4.6
50
1
0 to 70
-
55 to 150
Unit
V
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
(Ta = 0 °C to 70 °C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
Min.
3.0
0
2.0
-
0.3
*2
Typ.
3.3
0
¾
¾
Max.
3.6
0
V
CC
+ 0.3
0.8
*1
Unit
V
V
V
V
V
CC
V
SS
V
IH
V
IL
Notes:
*1. The input voltage is V
CC
+ 1.0V when the pulse width is less than 20ns (the pulse width is with
respect to the point at which V
CC
is applied).
*2. The input voltage is V
SS
-
1.0V when the pulse width is less than 20ns (the pulse width respect to
the point at which V
SS
is applied).
Capacitance
(V
CC
= 3.3V
±
0.3V, Ta = 25°C, f=1MHz)
Parameter
Input Capacitance (A0 - A9)
Input Capacitance
(RAS, LCAS, UCAS, WE, OE)
Output Capacitance (DQ1 - DQ16)
Symbol
Typ.
¾
¾
¾
Max.
5
7
7
Unit
pF
pF
pF
C
IN1
C
IN2
C
I/O
No.
4/14
DC Characteristics
(V
CC
= 3.3V
±
0.3V, Ta = 0°C to 70°C)
MSM51V18160 MSM51V18160 MSM51V18160
F-50
F-60
F-70
Unit Note
Min.
Output High Voltage
Output Low Voltage
Input Leakage
Current
Output Leakage
Current
Average Power
Supply Current
(Operating)
Power Supply
Current
(Standby)
Average Power
Supply Current
(RAS-only Refresh)
Power Supply
Current
(Standby)
Average Power
Supply Current
(CAS before RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
V
OH
V
OL
I
LI
I
OH
=
-2.0mA
I
OL
= 2.0mA
0V
£
V
I
£
V
CC
+0.3V;
All other pins not
under test = 0V
DQ disable
0V
£
V
O
£
V
CC
RAS, CAS cycling,
t
RC
= Min.
RAS, CAS = V
IH
I
CC2
RAS, CAS
³
V
CC
-
0.2V
RAS cycling,
I
CC3
CAS = V
IH
,
t
RC
= Min.
RAS = V
IH
,
I
CC5
CAS = V
IL
,
DQ = enable
I
CC6
RAS = cycling,
CAS before RAS
RAS = V
IL
,
I
CC7
CAS cycling,
t
PC
= Min.
¾
80
¾
70
¾
60
mA
1,3
¾
¾
¾
¾
5
¾
5
¾
5
mA
1
¾
80
¾
70
¾
60
mA
1,2
-
10
10
-
10
10
-
10
10
mA
2.4
0
Max.
V
CC
0.4
Min.
2.4
0
Max.
V
CC
0.4
Min.
2.4
0
Max.
V
CC
0.4
V
V
Parameter
Symbol
Condition
I
LO
-
10
10
-
10
10
-
10
10
mA
I
CC1
¾
¾
¾
80
¾
¾
¾
70
¾
¾
¾
60
mA
1,2
2
0.5
2
0.5
2
0.5
mA
1
80
70
60
mA
1,2
Notes: 1.
2.
3.
I
CC
Max. is specified as I
CC
for output open condition.
The address can be changed once or less while RAS = V
IL
.
The address can be changed once or less while CAS = V
IH
.
No.
5/14
模拟电子