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MSM51V4221C-40RA

描述：
Memory Circuit, 256KX4, CMOS, PDIP16, 0.300 INCH, 2.54 MM PITCH, PLASTIC, DIP-16
分类：
存储    存储   
文件大小：
266KB，共17页
制造商：
LAPIS Semiconductor Co Ltd
概述
Memory Circuit, 256KX4, CMOS, PDIP16, 0.300 INCH, 2.54 MM PITCH, PLASTIC, DIP-16
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
LAPIS Semiconductor Co Ltd
零件包装代码
DIP
包装说明
DIP, DIP16,.3
针数
16
Reach Compliance Code
unknown
最长访问时间
35 ns
JESD-30 代码
R-PDIP-T16
JESD-609代码
e0
长度
19.05 mm
内存密度
1048576 bit
内存集成电路类型
MEMORY CIRCUIT
内存宽度
4
功能数量
1
端子数量
16
字数
262144 words
字数代码
256000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
256KX4
封装主体材料
PLASTIC/EPOXY
封装代码
DIP
封装等效代码
DIP16,.3
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度（摄氏度）
NOT SPECIFIED
电源
3.3 V
认证状态
Not Qualified
座面最大高度
5.08 mm
最大待机电流
0.003 A
最大压摆率
0.03 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
NO
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
7.62 mm
文档预览
Dear customers,
About the change in the name such as "Oki Electric Industry Co. Ltd." and
"OKI" in documents to OKI Semiconductor Co., Ltd.
The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI
Semiconductor Co., Ltd. on October 1, 2008.
Therefore, please accept that although
the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".
It is a change of the company name, the company trademark, and the logo, etc. , and
NOT a content change in documents.
October 1, 2008
OKI Semiconductor Co., Ltd.
550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan
http://www.okisemi.com/en/
FEDS51V4221C-03
1
Semiconductor
MSM51V4221C
262,263-Word
×
4-Bit Field Memory
This version: Oct. 2000
Previous version: Feb. 2000
GENERAL DESCRIPTION
The OKI MSM51V4221C is a high performance 1-Mbit, 256K
×
4-bit, Field Memory. It is designed for high-
speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and Multi-media
systems. It is a FRAM for wide or low end use as general commodity TVs and VTRs, exclusively. The
MSM51V4221C is not designed for the other use or high end use in medical systems, professional graphics
systems which require long term picture, and data storage systems and others. The 1-Mbit capacity fits one field of
a conventional NTSC TV screen.
Each of the 4-bit planes has separate serial write and read ports. These employ independent control clocks to
support asynchronous read and write operations. Different clock rates are also supported that allow alternate data
rates between write and read data streams.
The MSM51V4221C provides high speed FIFO, First-In First-Out, operation without external refreshing: it
refreshes its DRAM storage cells automatically, so that it appears fully static to the users.
Moreover, fully static type memory cells and decoders for serial access enable refresh free serial access operation,
so that the serial read and/or write control clock can be halted high or low for any duration as long as the power is
on. Internal conflicts of memory access and refreshing operations are prevented by special arbitration logic.
The MSM51V4221B’s function is simple, and similar to a digital delay device whose delay-bit-length is easily set
by reset timing. The delay length, number of read delay clocks between write and read, is determined by externally
controlled write and read reset timings.
Additional SRAM serial registers, or line buffers for the initial access of 256
×
4-bit enable high speed first-bit-
access with no clock delay just after the write or read reset timings.
The MSM51V4221C is similar in operation and functionality to OKI 2-Mbit Field Memory MSM51V8221A.
1/16
FEDS51V4221C-03
Semiconductor
1
MSM51V4221C
FEATURES
•
•
•
•
Single power supply: 3.3 V
±
0.3 V
512 Rows
×
512 Column
×
4 bits
Fast FIFO (First-in First-out) operation
High speed asynchronous serial access
Read/Write cycle time
30 ns/40 ns
Access time
30 ns/35 ns
•
Functional compatibility with OKI MSM51V8221A
•
Self refresh (No refresh control is required)
•
Package options:
16-pin 300 mil plastic DIP
(DIP16-P-300-2.54)
26/20-pin 300 mil plastic SOJ
(SOJ26/20-P-300-1.27)
20-pin 400 mil plastic ZIP
(ZIP20-P-400-1.27)
(Product: MSM51V4221C-xxRA)
(Product: MSM51V4221C-xxJA)
(Product: MSM51V4221C-xxRD)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM51V4221C-30RA
MSM51V4221C-40RA
MSM51V4221C-30JA
MSM51V4221C-40JA
MSM51V4221C-30RD
MSM51V4221C-40RD
Access Time (Max.)
30 ns
35 ns
30 ns
35 ns
30 ns
35 ns
Cycle Time (Min.)
30 ns
40 ns
30 ns
40 ns
30 ns
40 ns
Package
300 mil 16-pin DIP
300 mil 26/20-pin SOJ
400 mil 20-pin ZIP
2/16
FEDS51V4221C-03
Semiconductor
1
MSM51V4221C
PIN CONFIGURATION (TOP VIEW)
WE 1
RSTW 2
SWCK 3
D
IN
0 4
D
IN
1 5
D
IN
2 6
D
IN
3 7
V
SS
8
16 V
CC
15 RE
14 RSTR
13 SRCK
12 D
OUT
0
11 D
OUT
1
10 D
OUT
2
9 D
OUT
3
WE 1
RSTW 2
SWCK 3
D
IN
0 4
NC 5
NC 9
D
IN
1 10
D
IN
2 11
D
IN
3 12
V
SS
13
26 V
CC
25 RE
24 RSTR
23 SRCK
22 NC
18 NC
17 D
OUT
0
16 D
OUT
1
15 D
OUT
2
14 D
OUT
3
SRCK
RE
1
3
2 RSTR
4 V
CC
6 RSTW
8 D
IN
0
NO LEAD
12 NC
14 D
IN
2
16 V
SS
18 D
OUT
2
20 D
OUT
0
WE 5
SWCK 7
NC
9
NC 11
D
IN
1 13
D
IN
3 15
D
OUT
3 17
D
OUT
1 19
26/20-Pin Plastic SOJ
16-Pin Plastic DIP
20-Pin Plastic ZIP
Pin Name
SWCK
SRCK
WE
RE
RSTW
RSTR
D
IN
0 to 3
D
OUT
0 to 3
V
CC
V
SS
NC
Function
Serial Write Clock
Serial Read Clock
Write Enable
Read Enable
Write Reset Clock
Read Reset Clock
Data Input
Data Output
Power Supply (3.3 V)
Ground (0 V)
No Connection
3/16
FEDS51V4221C-03
Semiconductor
1
MSM51V4221C
BLOCK DIAGRAM
D
OUT
(× 4)
Data-Out
Buffer (× 4)
RE
RSTR
SRCK
Serial Read Controller
512-Word Serial Read Register (× 4)
Read Line Buffer Read Line Buffer
Low-Half (
×
4)
High-Half (
×
4)
256 (× 4)
120-Word
Sub-Register (× 4)
256 (× 4)
120-Word
Sub-Register (× 4)
256K (× 4)
Memory
Array
X
Decoder
Read/Write
and Refresh
Controller
256 (× 4)
256 (× 4)
Clock
Oscillator
Write Line Buffer Write Line Buffer
Low-Half (
×
4)
High-Half (
×
4)
512-Word Serial Write Register (× 4)
Data-In
Buffer (× 4)
V
BB
Generator
Serial Write Controller
D
IN
(× 4)
WE
RSTW
SWCK
4/16
查看更多>
参数对比
与MSM51V4221C-40RA相近的元器件有：MSM51V4221C-30RA、MSM51V4221C-40JA、MSM51V4221C-30RD、MSM51V4221C-40RD、MSM51V4221C-30JA。描述及对比如下：
型号 MSM51V4221C-40RA MSM51V4221C-30RA MSM51V4221C-40JA MSM51V4221C-30RD MSM51V4221C-40RD MSM51V4221C-30JA
描述 Memory Circuit, 256KX4, CMOS, PDIP16, 0.300 INCH, 2.54 MM PITCH, PLASTIC, DIP-16 Memory Circuit, 256KX4, CMOS, PDIP16, 0.300 INCH, 2.54 MM PITCH, PLASTIC, DIP-16 Memory Circuit, 256KX4, CMOS, PDSO20, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/20 Memory Circuit, 256KX4, CMOS, PZIP20, 0.400 INCH HEIGHT, 1.27 MM PITCH, PLASTIC, ZIP-20 Memory Circuit, 256KX4, CMOS, PZIP20, 0.400 INCH HEIGHT, 1.27 MM PITCH, PLASTIC, ZIP-20 Memory Circuit, 256KX4, CMOS, PDSO20, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/20
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd
零件包装代码 DIP DIP SOJ ZIP ZIP SOJ
包装说明 DIP, DIP16,.3 DIP, DIP16,.3 SOJ, SOJ20/26,.34 ZIP, ZIP20,.1 ZIP, ZIP20,.1 SOJ, SOJ20/26,.34
针数 16 16 20 20 20 20
Reach Compliance Code unknown unknown unknown unknown unknown unknown
最长访问时间 35 ns 30 ns 35 ns 30 ns 35 ns 30 ns
JESD-30 代码 R-PDIP-T16 R-PDIP-T16 R-PDSO-J20 R-PZIP-T20 R-PZIP-T20 R-PDSO-J20
JESD-609代码 e0 e0 e0 e0 e0 e0
长度 19.05 mm 19.05 mm 17.15 mm 25.5 mm 25.5 mm 17.15 mm
内存密度 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit
内存集成电路类型 MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT
内存宽度 4 4 4 4 4 4
功能数量 1 1 1 1 1 1
端子数量 16 16 20 20 20 20
字数 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words
字数代码 256000 256000 256000 256000 256000 256000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 256KX4 256KX4 256KX4 256KX4 256KX4 256KX4
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 DIP DIP SOJ ZIP ZIP SOJ
封装等效代码 DIP16,.3 DIP16,.3 SOJ20/26,.34 ZIP20,.1 ZIP20,.1 SOJ20/26,.34
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE SMALL OUTLINE IN-LINE IN-LINE SMALL OUTLINE
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 5.08 mm 5.08 mm 3.55 mm 10.16 mm 10.16 mm 3.55 mm
最大待机电流 0.003 A 0.003 A 0.003 A 0.003 A 0.003 A 0.003 A
最大压摆率 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 NO NO YES NO NO YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 THROUGH-HOLE THROUGH-HOLE J BEND THROUGH-HOLE THROUGH-HOLE J BEND
端子节距 2.54 mm 2.54 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL ZIG-ZAG ZIG-ZAG DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 7.62 mm 7.62 mm 7.62 mm 2.8 mm 2.8 mm 7.62 mm
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