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MSM51V4256A-70ZS

描述：
Fast Page DRAM, 256KX4, 70ns, CMOS, PZIP19, 0.400 INCH, 1.27 MM PITCH, PLASTIC, ZIP-20/19
分类：
存储    存储   
文件大小：
275KB，共18页
制造商：
LAPIS Semiconductor Co Ltd
概述
Fast Page DRAM, 256KX4, 70ns, CMOS, PZIP19, 0.400 INCH, 1.27 MM PITCH, PLASTIC, ZIP-20/19
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
LAPIS Semiconductor Co Ltd
零件包装代码
ZIP
包装说明
ZIP, ZIP20,.1
针数
20
Reach Compliance Code
unknown
ECCN代码
EAR99
访问模式
FAST PAGE
最长访问时间
70 ns
其他特性
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型
COMMON
JESD-30 代码
R-PZIP-T19
JESD-609代码
e0
长度
25.5 mm
内存密度
1048576 bit
内存集成电路类型
FAST PAGE DRAM
内存宽度
4
功能数量
1
端口数量
1
端子数量
19
字数
262144 words
字数代码
256000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
256KX4
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
ZIP
封装等效代码
ZIP20,.1
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度（摄氏度）
NOT SPECIFIED
电源
3.3 V
认证状态
Not Qualified
刷新周期
512
座面最大高度
10.16 mm
最大待机电流
0.0005 A
最大压摆率
0.045 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
NO
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
THROUGH-HOLE
端子节距
1.27 mm
端子位置
ZIG-ZAG
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
2.8 mm
Base Number Matches
1
文档预览
Dear customers,
About the change in the name such as "Oki Electric Industry Co. Ltd." and
"OKI" in documents to OKI Semiconductor Co., Ltd.
The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI
Semiconductor Co., Ltd. on October 1, 2008.
Therefore, please accept that although
the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".
It is a change of the company name, the company trademark, and the logo, etc. , and
NOT a content change in documents.
October 1, 2008
OKI Semiconductor Co., Ltd.
550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan
http://www.okisemi.com/en/
E2G0057-17-41
¡ Semiconductor
MSM51V4256A
¡ Semiconductor
This version: Jan. 1998
MSM51V4256A
Previous version: May 1997
262,144-Word
¥
4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM51V4256A is a 262,144-word
¥
4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM51V4256A achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer
metal CMOS process. The MSM51V4256A is available in a 20-pin plastic DIP, 26/20-pin plastic SOJ,
or 20-pin plastic ZIP.
FEATURES
• 262,144-word
¥
4-bit configuration
• Single 3.3 V power supply, 0.3 V tolerance
• Input
: LVTTL compatible, low input capacitance
• Output : LVTTL compatible, 3-state
• Refresh : 512 cycles/8 ms
• Fast page mode, read modify write capability
•
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
• Package options:
20-pin 300 mil plastic DIP
(DIP20-P-300-2.54-W1) (Product : MSM51V4256A-xxRS)
26/20-pin 300 mil plastic SOJ (SOJ26/20-P-300-1.27) (Product : MSM51V4256A-xxJS)
20-pin 400 mil plastic ZIP
(ZIP20-P-400-1.27)
(Product : MSM51V4256A-xxZS)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM51V4256A-70
MSM51V4256A-80
MSM51V4256A-10
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
70 ns 40 ns 25 ns 25 ns
80 ns 45 ns 25 ns 25 ns
100 ns 50 ns 30 ns 30 ns
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
130 ns
150 ns
190 ns
162 mW
144 mW
126 mW
1.8 mW
1/17
¡ Semiconductor
PIN CONFIGURATION (TOP VIEW)
DQ1 1
DQ2 2
WE
3
RAS
4
NC 5
A0 6
A1 7
A2 8
A3 9
V
CC
10
20 V
SS

DQ1 1
19 DQ4
18 DQ3
17
CAS
16
OE
15 A8
14 A7
13 A6
12 A5
11 A4
DQ2 2
WE
3
NC 5
A0 9
RAS
4
A1 10
A2 11
A3 12
V
CC
13
Pin Name
A0 - A8
RAS
CAS
DQ1 - DQ4
OE
WE
V
CC
V
SS
NC
MSM51V4256A
26 V
SS
25 DQ4
24 DQ3
23
CAS
22
OE
18 A8
17 A7
16 A6
15 A5
14 A4
OE
1
DQ3 3
V
SS
5
DQ2 7
RAS
9
A0 11
A2 13
V
CC
15
A5 17
A7 19
2
CAS
4 DQ4
6 DQ1
8
WE
NO LEAD
12 A1
14 A3
16 A4
18 A6
20 A8
20-Pin Plastic ZIP
26/20-Pin Plastic SOJ
20-Pin Plastic DIP
Function
Address Input
Row Address Strobe
Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (3.3 V)
Ground (0 V)
No Connection
2/17
¡ Semiconductor
MSM51V4256A
BLOCK DIAGRAM
RAS
CAS
Timing
Generator
Timing
Generator
9
Column
Address
Buffers
Internal
Address
Counter
9
Column
Decoders
Write
Clock
Generator
WE
OE
4
Output
Buffers
4
4
A0 - A8
Refresh
Control Clock
Sense
Amplifiers
4
I/O
Selector
4
4
DQ1 - DQ4
Input
Buffers
4
9
Row
Address
Buffers
9
Row
De-
coders
Word
Drivers
Memory
Cells
V
CC
On Chip
V
BB
Generator
V
SS
3/17
¡ Semiconductor
MSM51V4256A
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
*
T
opr
T
stg
Rating
–0.5 to 4.6
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
3.0
0
2.0
–0.3
Typ.
3.3
0
—
—
Max.
3.6
0
V
CC
+ 0.3
0.8
(Ta = 0°C to 70°C)
Unit
V
V
V
V
Capacitance
Parameter
Input Capacitance (A0 - A8)
Input Capacitance (RAS,
CAS, WE, OE)
Output Capacitance (DQ1 - DQ4)
Symbol
C
IN1
C
IN2
C
I/O
Typ.
—
—
—
(V
CC
= 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz)
Max.
5
5
6
Unit
pF
pF
pF
4/17
查看更多>
参数对比
与MSM51V4256A-70ZS相近的元器件有：MSM51V4256A-70RS、MSM51V4256A-10JS、MSM51V4256A-70JS、MSM51V4256A-10RS、MSM51V4256A-80RS、MSM51V4256A-80JS、MSM51V4256A-10ZS、MSM51V4256A-80ZS。描述及对比如下：
型号 MSM51V4256A-70ZS MSM51V4256A-70RS MSM51V4256A-10JS MSM51V4256A-70JS MSM51V4256A-10RS MSM51V4256A-80RS MSM51V4256A-80JS MSM51V4256A-10ZS MSM51V4256A-80ZS
描述 Fast Page DRAM, 256KX4, 70ns, CMOS, PZIP19, 0.400 INCH, 1.27 MM PITCH, PLASTIC, ZIP-20/19 Fast Page DRAM, 256KX4, 70ns, CMOS, PDIP20, 0.300 INCH, 2.54 MM PITCH, PLASTIC, DIP-20 Fast Page DRAM, 256KX4, 100ns, CMOS, PDSO20, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/20 Fast Page DRAM, 256KX4, 70ns, CMOS, PDSO20, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/20 Fast Page DRAM, 256KX4, 100ns, CMOS, PDIP20, 0.300 INCH, 2.54 MM PITCH, PLASTIC, DIP-20 Fast Page DRAM, 256KX4, 80ns, CMOS, PDIP20, 0.300 INCH, 2.54 MM PITCH, PLASTIC, DIP-20 Fast Page DRAM, 256KX4, 80ns, CMOS, PDSO20, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/20 Fast Page DRAM, 256KX4, 100ns, CMOS, PZIP19, 0.400 INCH, 1.27 MM PITCH, PLASTIC, ZIP-20/19 Fast Page DRAM, 256KX4, 80ns, CMOS, PZIP19, 0.400 INCH, 1.27 MM PITCH, PLASTIC, ZIP-20/19
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
零件包装代码 ZIP DIP SOJ SOJ DIP DIP SOJ ZIP ZIP
包装说明 ZIP, ZIP20,.1 DIP, DIP20,.3 SOJ, SOJ20/26,.34 SOJ, SOJ20/26,.34 DIP, DIP20,.3 DIP, DIP20,.3 SOJ, SOJ20/26,.34 ZIP, ZIP20,.1 ZIP, ZIP20,.1
针数 20 20 20 20 20 20 20 20 20
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknow unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE
最长访问时间 70 ns 70 ns 100 ns 70 ns 100 ns 80 ns 80 ns 100 ns 80 ns
其他特性 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-PZIP-T19 R-PDIP-T20 R-PDSO-J20 R-PDSO-J20 R-PDIP-T20 R-PDIP-T20 R-PDSO-J20 R-PZIP-T19 R-PZIP-T19
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0 e0
长度 25.5 mm 24.38 mm 17.15 mm 17.15 mm 24.38 mm 24.38 mm 17.15 mm 25.5 mm 25.5 mm
内存密度 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bi 1048576 bi
内存集成电路类型 FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM
内存宽度 4 4 4 4 4 4 4 4 4
功能数量 1 1 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1 1 1
端子数量 19 20 20 20 20 20 20 19 19
字数 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words
字数代码 256000 256000 256000 256000 256000 256000 256000 256000 256000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 256KX4 256KX4 256KX4 256KX4 256KX4 256KX4 256KX4 256KX4 256KX4
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 ZIP DIP SOJ SOJ DIP DIP SOJ ZIP ZIP
封装等效代码 ZIP20,.1 DIP20,.3 SOJ20/26,.34 SOJ20/26,.34 DIP20,.3 DIP20,.3 SOJ20/26,.34 ZIP20,.1 ZIP20,.1
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE IN-LINE IN-LINE SMALL OUTLINE IN-LINE IN-LINE
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 512 512 512 512 512 512 512 512 512
座面最大高度 10.16 mm 5.08 mm 3.55 mm 3.55 mm 5.08 mm 5.08 mm 3.55 mm 10.16 mm 10.16 mm
最大待机电流 0.0005 A 0.0005 A 0.0005 A 0.0005 A 0.0005 A 0.0005 A 0.0005 A 0.0005 A 0.0005 A
最大压摆率 0.045 mA 0.045 mA 0.035 mA 0.045 mA 0.035 mA 0.04 mA 0.04 mA 0.035 mA 0.04 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 NO NO YES YES NO NO YES NO NO
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 THROUGH-HOLE THROUGH-HOLE J BEND J BEND THROUGH-HOLE THROUGH-HOLE J BEND THROUGH-HOLE THROUGH-HOLE
端子节距 1.27 mm 2.54 mm 1.27 mm 1.27 mm 2.54 mm 2.54 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 ZIG-ZAG DUAL DUAL DUAL DUAL DUAL DUAL ZIG-ZAG ZIG-ZAG
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 2.8 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm 2.8 mm 2.8 mm
厂商名称 LAPIS Semiconductor Co Ltd - - - LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd
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器件捷径:
S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY
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