器件参数

参数名称

属性值

是否无铅

含铅

是否Rohs认证

不符合

厂商名称

LAPIS Semiconductor Co Ltd

零件包装代码

TSOP

包装说明

TSOP2, TSSOP20/26,.36

针数

Reach Compliance Code

unknow

ECCN代码

EAR99

访问模式

FAST PAGE

最长访问时间

70 ns

其他特性

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

I/O 类型

COMMON

JESD-30 代码

R-PDSO-G20

JESD-609代码

长度

17.14 mm

内存密度

4194304 bi

内存集成电路类型

FAST PAGE DRAM

内存宽度

功能数量

端口数量

端子数量

字数

1048576 words

字数代码

1000000

工作模式

ASYNCHRONOUS

最高工作温度

70 °C

最低工作温度

-10 °C

组织

1MX4

输出特性

3-STATE

封装主体材料

PLASTIC/EPOXY

封装代码

TSOP2

封装等效代码

TSSOP20/26,.36

封装形状

RECTANGULAR

封装形式

SMALL OUTLINE, THIN PROFILE

峰值回流温度（摄氏度）

NOT SPECIFIED

电源

3.3 V

认证状态

Not Qualified

刷新周期

1024

座面最大高度

1.2 mm

自我刷新

最大待机电流

0.0005 A

最大压摆率

0.065 mA

最大供电电压 (Vsup)

3.6 V

最小供电电压 (Vsup)

3 V

标称供电电压 (Vsup)

3.3 V

表面贴装

YES

技术

CMOS

温度等级

COMMERCIAL

端子面层

Tin/Lead (Sn/Pb)

端子形式

GULL WING

端子节距

1.27 mm

端子位置

DUAL

处于峰值回流温度下的最长时间

NOT SPECIFIED

宽度

7.62 mm

文档预览

Dear customers,

About the change in the name such as "Oki Electric Industry Co. Ltd." and

"OKI" in documents to OKI Semiconductor Co., Ltd.

The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI

Semiconductor Co., Ltd. on October 1, 2008.

Therefore, please accept that although

the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"

remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".

It is a change of the company name, the company trademark, and the logo, etc. , and

NOT a content change in documents.

October 1, 2008

OKI Semiconductor Co., Ltd.

550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan

http://www.okisemi.com/en/

FEDD51V4400E-01

This version : Aug. 2000

Semiconductor

MSM51V4400E

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION

The MSM51V4400E is a 1,048,576-word

4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

technology. The MSM51V4400E achieves high integration, high-speed operation, and low-power consumption

because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The

MSM51V4400E is available in a 26/20-pin plastic SOJ, 26/20-pin plastic TSOP.

FEATURES

•

1,048,576-word

4-bit configuration

Single 3.3V power supply,

±0.3V

tolerance

Input

Output

Refresh

: LVTTL compatible, low input capacitance

: LVTTL compatible, 3-state

: 1024 cycles/16 ms

Fast page mode, read modify write capability

CAS

before

RAS

refresh, hidden refresh,

RAS-only

refresh capability

Multi-bit test mode capability

Package options:

26/20-pin 300mil plastic SOJ

26/20-pin 300mil plastic TSOP

(SOJ26/20-P-300-1.27)

(TSOPII26/20-P-300-1.27-K)

(Product : MSM51V4400E-xxSJ)

(Product : MSM51V4400E-xxTS-K)

xx indicates speed rank.

PRODUCT FAMILY

Family

MSM51V4400E-70

MSM51V4400E-10

Access Time (Max.)

RAC

70ns

100ns

35ns

50ns

CAC

20ns

25ns

OEA

20ns

25ns

Power Dissipation

Cycle Time

(Min.)

Operating (Max.) Standby (Max.)

130ns

180ns

234mW

198mW

1.8mW

1/14

FEDD51V4400E-01

MSM51V4400E

PIN CONFIGRATION (TOP VIEW)

DQ1

DQ2

RAS

DQ4

DQ3

CAS

DQ1

DQ2

RAS

DQ4

DQ3

CAS

A0 9

A1 10

A2 11

A3 12

A0 9

A1 10

A2 11

A3 12

26/20-Pin Plastic SOJ

26/20-Pin Plastic TSOP

(K Type)

Pin Name

A0–A9

RAS

CAS

DQ1–DQ4

Function

Address Input

Row Address Strobe

Column Address Strobe

Data Input/Data Output

Output Enable

Write Enable

Power Supply (3.3 V)

Ground (0 V)

Note : The same power supply voltage must be provided to every V

pin, and the

same GND voltage level must be provided to every V

pin.

2/14

FEDD51V4400E-01

MSM51V4400E

BLOCK DIAGRAM

Timing

Generator

Timing

Generator

RAS

CAS

Column

Address

Buffers

Column

decoders

Write

Clock

Generator

Output

Buffers

Input

Buffers

A0-A9

Internal

Address

Counter

Refresh

Control Clock

Sense Amplifiers

I/O

Selector

DQ1-DQ4

Row

Address

Buffers

Row

De-

coders

Word

Drivers

Memory

Cells

On Chip

Generator

3/14

FEDD51V4400E-01

MSM51V4400E

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

Parameter

Voltage

Any Pin Relative to V

Short Circuit Output Current

Power Dissipation

Operating Temperature

Storage Temperature

Symbol

opr

stg

Rating

−

0.5 to 4.6

−

10 to 70

−

55 to 150

Unit

°C

*: Ta = 25°C

Recommended Operating Conditions

(Ta =

−

°C to 70 °C)

Parameter

Power Supply Voltage

Input High Voltage

Input Low Voltage

Symbol

Min.

3.0

2.0

−

0.3

Typ.

3.3



Max.

3.6

Vcc

0.3

0.8

Unit

Notes:

*1. The input voltage is V

1.0V when the pulse width is less than 20ns (the pulse width is with

respect to the point at which V

is applied).

*2. The input voltage is V

−

1.0V when the pulse width is less than 20ns (the pulse width respect to

the point at which V

is applied).

Capacitance

(Vcc = 3.3V

0.3V, Ta = 25°C, f=1MHz)

Parameter

Input Capacitance (A0 – A9)

Input Capacitance (RAS,

CAS, WE, OE)

Output Capacitance (DQ1 – DQ4)

Symbol

Typ.



Max.

Unit

IN1

IN2

I/O

4/14

参数对比

与MSM51V4400E-70TS-K相近的元器件有：MSM51V4400E-10TS-K、MSM51V4400E-70SJ、MSM51V4400E-10SJ。描述及对比如下：

型号	MSM51V4400E-70TS-K	MSM51V4400E-10TS-K	MSM51V4400E-70SJ	MSM51V4400E-10SJ
描述	Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20, 0.300 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-26/20	Fast Page DRAM, 1MX4, 100ns, CMOS, PDSO20, 0.300 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-26/20	Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/20	Fast Page DRAM, 1MX4, 100ns, CMOS, PDSO20, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/20
是否无铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合
零件包装代码	TSOP	TSOP	SOJ	SOJ
包装说明	TSOP2, TSSOP20/26,.36	TSOP2, TSSOP20/26,.36	SOJ, SOJ20/26,.34	SOJ, SOJ20/26,.34
针数	20	20	20	20
Reach Compliance Code	unknow	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99
访问模式	FAST PAGE	FAST PAGE	FAST PAGE	FAST PAGE
最长访问时间	70 ns	100 ns	70 ns	100 ns
其他特性	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PDSO-G20	R-PDSO-G20	R-PDSO-J20	R-PDSO-J20
JESD-609代码	e0	e0	e0	e0
长度	17.14 mm	17.14 mm	17.15 mm	17.15 mm
内存密度	4194304 bi	4194304 bit	4194304 bit	4194304 bit
内存集成电路类型	FAST PAGE DRAM	FAST PAGE DRAM	FAST PAGE DRAM	FAST PAGE DRAM
内存宽度	4	4	4	4
功能数量	1	1	1	1
端口数量	1	1	1	1
端子数量	20	20	20	20
字数	1048576 words	1048576 words	1048576 words	1048576 words
字数代码	1000000	1000000	1000000	1000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C
最低工作温度	-10 °C	-10 °C	-10 °C	-10 °C
组织	1MX4	1MX4	1MX4	1MX4
输出特性	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP2	TSOP2	SOJ	SOJ
封装等效代码	TSSOP20/26,.36	TSSOP20/26,.36	SOJ20/26,.34	SOJ20/26,.34
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
电源	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	1024	1024	1024	1024
座面最大高度	1.2 mm	1.2 mm	3.55 mm	3.55 mm
自我刷新	NO	NO	NO	NO
最大待机电流	0.0005 A	0.0005 A	0.0005 A	0.0005 A
最大压摆率	0.065 mA	0.055 mA	0.065 mA	0.055 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	GULL WING	GULL WING	J BEND	J BEND
端子节距	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	7.62 mm	7.62 mm	7.62 mm	7.62 mm
厂商名称	LAPIS Semiconductor Co Ltd	-	LAPIS Semiconductor Co Ltd	LAPIS Semiconductor Co Ltd