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MSM548512L-10RS

描述：
Pseudo Static RAM, 512KX8, 100ns, CMOS, PDIP32, 0.600 INCH, 2.54 MM PITCH, PLASTIC DIP-32
分类：
存储    存储   
文件大小：
196KB，共13页
制造商：
LAPIS Semiconductor Co Ltd
概述
Pseudo Static RAM, 512KX8, 100ns, CMOS, PDIP32, 0.600 INCH, 2.54 MM PITCH, PLASTIC DIP-32
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
LAPIS Semiconductor Co Ltd
零件包装代码
DIP
包装说明
DIP, DIP32,.6
针数
32
Reach Compliance Code
unknown
ECCN代码
3A991.B.2.A
最长访问时间
100 ns
I/O 类型
COMMON
JESD-30 代码
R-PDIP-T32
JESD-609代码
e0
长度
41.66 mm
内存密度
4194304 bit
内存集成电路类型
PSEUDO STATIC RAM
内存宽度
8
功能数量
1
端子数量
32
字数
524288 words
字数代码
512000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
512KX8
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
DIP
封装等效代码
DIP32,.6
封装形状
RECTANGULAR
封装形式
IN-LINE
并行/串行
PARALLEL
峰值回流温度（摄氏度）
NOT SPECIFIED
电源
5 V
认证状态
Not Qualified
座面最大高度
5.08 mm
自我刷新
YES
最大待机电流
0.0002 A
最小待机电流
4.5 V
最大压摆率
0.075 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
NO
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
13.965 mm
文档预览
Dear customers,
About the change in the name such as "Oki Electric Industry Co. Ltd." and
"OKI" in documents to OKI Semiconductor Co., Ltd.
The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI
Semiconductor Co., Ltd. on October 1, 2008.
Therefore, please accept that although
the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".
It is a change of the company name, the company trademark, and the logo, etc. , and
NOT a content change in documents.
October 1, 2008
OKI Semiconductor Co., Ltd.
550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan
http://www.okisemi.com/en/
E2L0044-17-Y1
¡ Semiconductor
MSM548512L
¡ Semiconductor
524,288-Word
¥
8-Bit High-Speed PSRAM
This version: Jan. 1998
MSM548512L
Previous version: Dec. 1996
DESCRIPTION
The MSM548512L is fabricated using OKI’s CMOS silicon gate process technology. This process,
coupled with single-transister memory storage cells, permits maximum circuit density, minimum
chip size and high speed.
MSM548512L has Self-refresh mode in addition to Address-refresh mode and Auto-refresh
mode. In the Self-refresh mode the internal refresh timer and address counter refresh the
dynamic memory cells automatically. This series allows low power consumption when using
standby mode with Self-refresh.
The MSM548512L also features a static RAM-like write function that writes the data into the
memory cell at the rising edge of
WE.
FEATURES
• Large capacity
• Fast access time
• Low power
• Refresh free
• Logic compatible
• Single power supply
• Refresh
• Package compatible
• Package options:
32-pin 600 mil plastic DIP
32-pin 525 mil plastic SOP
:
:
:
:
:
:
:
:
4-Mbit (524,288-word
¥
8 bits)
80 ns max.
200
µA
max. (standby with Self-refresh)
Self refresh
SRAM
WE
pin, no address multiplex
5 V
±10%
2048 cycle/32 ms auto-address refresh
SRAM standard package
(DIP32-P-600-2.54)
(Product : MSM548512L-xxRS)
(SOP32-P-525-1.27-K) (Product : MSM548512L-xxGS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM548512L-80RS
MSM548512L-10RS
MSM548512L-12RS
MSM548512L-80GS-K
MSM548512L-10GS-K
MSM548512L-12GS-K
Access Time (Max.)
80 ns
100 ns
120 ns
80 ns
100 ns
120 ns
525 mil 32-pin
Plastic SOP
600 mil 32-pin
Plastic DIP
Package
1/12
¡ Semiconductor
MSM548512L
PIN CONFIGURATION (TOP VIEW)
A
18
1
A
16
2
A
14
3
A
12
4
A
7
5
A
6
6
A
5
7
A
4
8
A
3
9
A
2
10
A
1
11
A
0
12
I/O
0
13
I/O
1
14
I/O
2
15
V
SS
16
32-Pin Plastic DIP
32 V
CC
31 A
15
30 A
17
29
WE
28 A
13
27 A
8
26 A
9
25 A
11
24
OE/RFSH
23 A
10
22
CE
21 I/O
7
20 I/O
6
19 I/O
5
18 I/O
4
17 I/O
3
A
18
1
A
16
2
A
14
3
A
12
4
A
7
5
A
6
6
A
5
7
A
4
8
A
3
9
A
2
10
A
1
11
A
0
12
I/O
0
13
I/O
1
14
I/O
2
15
V
SS
16
,
32-Pin Plastic SOP
32 V
CC
31 A
15
30 A
17
29
WE
28 A
13
27 A
8
26 A
9
25 A
11
24
OE/RFSH
23 A
10
22
CE
21 I/O
7
20 I/O
6
19 I/O
5
18 I/O
4
17 I/O
3
Pin Name
A
0
- A
18
I/O
0
- I/O
7
CE
OE/RFSH
WE
V
CC
V
SS
Function
Address Input
Data Input/Output
Chip Enable Input
Output Enable / Refresh Input
Write Enable Input
Power Voltage (5 V)
Ground (0 V)
2/12
¡ Semiconductor
MSM548512L
BLOCK DIAGRAM
A
0
Address
Latch
Control
A
10
Row
Decoder
Memory Matrix
(2048
¥
256)
¥
8
I/O
0
Input
Data
Control
Column I/O
Column Decoder
I/O
7
Address Latch Control
A
11
A
18
Refresh
Control
CE
Timing Pulse Generator
OE/RFSH
WE
Read/Write Control
3/12
¡ Semiconductor
MSM548512L
FUNCTION TABLE
CE
L
L
L
H
H
OE/RFSH
L
X
H
L
H
WE
H
L
H
X
X
I/O Pin
Low-Z
High-Z
High-Z
High-Z
High-Z
Mode
Read
Write
—
Refresh
Standby
L : Low Level Input
H : High Level Input
X : Don’t Care
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin from V
SS
*1
Power Dissipation
Operating Temperature
Storage Temperature
Storage Temperature (biased)
Short Circuit Output Current
Symbol
V
T
P
D
T
opr
T
stg
T
bias
I
OS
Rating
–1.0 to 7.0
1.0
0 to 70
–55 to 125
–10 to 85
50
Unit
V
W
°C
°C
°C
mA
*1
Note:
To V
SS
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to the conditions as detailed
in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
(Ta = 0°C to 70°C)
Min.
4.5
0
2.4
–0.5
Typ.
5.0
0
—
—
Max.
5.5
0
6.0
0.8
Unit
V
V
V
V
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
4/12
查看更多>
参数对比
与MSM548512L-10RS相近的元器件有：MSM548512L-12GS-K、MSM548512L-12RS、MSM548512L-80GS-K、MSM548512L-10GS-K、MSM548512L-80RS。描述及对比如下：
型号 MSM548512L-10RS MSM548512L-12GS-K MSM548512L-12RS MSM548512L-80GS-K MSM548512L-10GS-K MSM548512L-80RS
描述 Pseudo Static RAM, 512KX8, 100ns, CMOS, PDIP32, 0.600 INCH, 2.54 MM PITCH, PLASTIC DIP-32 Pseudo Static RAM, 512KX8, 120ns, CMOS, PDSO32, 0.525 INCH, 1.27 MM PICTH, PLASTIC SOP-32 Pseudo Static RAM, 512KX8, 120ns, CMOS, PDIP32, 0.600 INCH, 2.54 MM PITCH, PLASTIC DIP-32 Pseudo Static RAM, 512KX8, 80ns, CMOS, PDSO32, 0.525 INCH, 1.27 MM PICTH, PLASTIC SOP-32 Pseudo Static RAM, 512KX8, 100ns, CMOS, PDSO32, 0.525 INCH, 1.27 MM PICTH, PLASTIC SOP-32 Pseudo Static RAM, 512KX8, 80ns, CMOS, PDIP32, 0.600 INCH, 2.54 MM PITCH, PLASTIC DIP-32
厂商名称 LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd
零件包装代码 DIP SOIC DIP SOIC SOIC DIP
包装说明 DIP, DIP32,.6 SOP, SOP32,.56 DIP, DIP32,.6 SOP, SOP32,.56 SOP, SOP32,.56 DIP, DIP32,.6
针数 32 32 32 32 32 32
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 100 ns 120 ns 120 ns 80 ns 100 ns 80 ns
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-PDIP-T32 R-PDSO-G32 R-PDIP-T32 R-PDSO-G32 R-PDSO-G32 R-PDIP-T32
长度 41.66 mm 21 mm 41.66 mm 21 mm 21 mm 41.66 mm
内存密度 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit
内存集成电路类型 PSEUDO STATIC RAM PSEUDO STATIC RAM PSEUDO STATIC RAM PSEUDO STATIC RAM PSEUDO STATIC RAM PSEUDO STATIC RAM
内存宽度 8 8 8 8 8 8
功能数量 1 1 1 1 1 1
端子数量 32 32 32 32 32 32
字数 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words
字数代码 512000 512000 512000 512000 512000 512000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 DIP SOP DIP SOP SOP DIP
封装等效代码 DIP32,.6 SOP32,.56 DIP32,.6 SOP32,.56 SOP32,.56 DIP32,.6
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE SMALL OUTLINE IN-LINE SMALL OUTLINE SMALL OUTLINE IN-LINE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
电源 5 V 5 V 5 V 5 V 5 V 5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 5.08 mm 3 mm 5.08 mm 3 mm 3 mm 5.08 mm
自我刷新 YES YES YES YES YES YES
最大待机电流 0.0002 A 0.0002 A 0.0002 A 0.0002 A 0.0002 A 0.0002 A
最小待机电流 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
最大压摆率 0.075 mA 0.075 mA 0.075 mA 0.075 mA 0.075 mA 0.075 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 NO YES NO YES YES NO
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 THROUGH-HOLE GULL WING THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE
端子节距 2.54 mm 1.27 mm 2.54 mm 1.27 mm 1.27 mm 2.54 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
宽度 13.965 mm 11.045 mm 13.965 mm 11.045 mm 11.045 mm 13.965 mm
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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