Dear customers,
About the change in the name such as "Oki Electric Industry Co. Ltd." and
"OKI" in documents to OKI Semiconductor Co., Ltd.
The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI
Semiconductor Co., Ltd. on October 1, 2008.
Therefore, please accept that although
the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".
It is a change of the company name, the company trademark, and the logo, etc. , and
NOT a content change in documents.
October 1, 2008
OKI Semiconductor Co., Ltd.
550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan
http://www.okisemi.com/en/
FEDS54V16283-05
¡ Semiconductor
MSM54V16283
262,144-Word
¥
16-Bit Multiport DRAM
This version: Feb. 2000
Previous version: Jan. 1998
DESCRIPTION
The MSM54V16283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit
dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and
asynchronously.
It supports three types of operations: random access to RAM port, high speed serial access to
SAM port, and bidirectional transfer of data between any selected row in the RAM port and the
SAM port. In addition to the conventional multiport DRAM operating modes, the MSM54V16283
features block write, flash write functions, extended page mode on the RAM port, a split data
transfer capability, and programmable stops on the SAM port. The SAM port requires no refresh
operation because it uses static CMOS flip-flops.
FEATURES
• Single power supply: 3.3 V
±0.3
V
•
RAS
only refresh
• Full TTL compatibility
•
CAS
before
RAS
refresh
• Multiport organization
•
CAS
before
RAS
self-refresh
RAM : 256K word
¥
16 bits
• Hidden refresh
SAM : 512 word
¥
16 bits
• Serial read/write
• Extended page mode
• 512 tap location
• Write per bit
• Programmable stops
• Persistent write per bit
• Bidirectional data transfer
• Byte write
• Split transfer
• Masked flash write
• Masked write transfer
• Masked block write (8 columns)
• Refresh: 512 cycles/8 ms
• Package options:
64-pin 525 mil plastic SSOP
(SSOP64-P-525-0.80-K) (Product : MSM54V16283-xxGS-K)
70/64-pin 400 mil plastic TSOP (Type II)(TSOPII70/64-P-400-0.65-K)(Product : MSM54V16283-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM54V16283-60
MSM54V16283-70
Access Time
RAM
60 ns
70 ns
SAM
18 ns
20 ns
Cycle Time
RAM
120 ns
140 ns
SAM
22 ns
22 ns
Power Dissipation
Operating
160 mA
150 mA
Standby
8 mA
8 mA
1/43
, ,
¡ Semiconductor
FEDS54V16283-05
MSM54V16283
PIN CONFIGURATION (TOP VIEW)
V
CC
TRG
V
SS
SDQ0
DQ0
SDQ1
DQ1
V
CC
SDQ2
DQ2
SDQ3
DQ3
V
SS
SDQ4
DQ4
SDQ5
DQ5
V
CC
SDQ6
DQ6
SDQ7
DQ7
V
SS
WEL
WEU
RAS
A8
A7
A6
A5
A4
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
SC
SE
V
SS
SDQ15
DQ15
SDQ14
DQ14
V
CC
SDQ13
DQ13
SDQ12
DQ12
V
SS
SDQ11
DQ11
SDQ10
DQ10
V
CC
SDQ9
DQ9
SDQ8
DQ8
V
SS
DSF
NC
CAS
QSF
A0
A1
A2
A3
V
SS
V
CC
TRG
V
SS
SDQ0
DQ0
SDQ1
DQ1
V
CC
SDQ2
DQ2
SDQ3
DQ3
V
SS
SDQ4
DQ4
SDQ5
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
SC
SE
V
SS
SDQ15
DQ15
SDQ14
DQ14
V
CC
SDQ13
DQ13
SDQ12
DQ12
V
SS
SDQ11
DQ11
SDQ10
DQ5
V
CC
SDQ6
DQ6
SDQ7
DQ7
V
SS
WEL
WEU
RAS
A8
A7
A6
A5
A4
V
CC
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
DQ10
V
CC
SDQ9
DQ9
SDQ8
DQ8
V
SS
DSF
NC
CAS
QSF
A0
A1
A2
A3
V
SS
64-Pin Plastic SSOP
70/64-Pin Plastic TSOP (II)
(K Type)
Pin Name
A0 - A8
DQ0 - DQ15
SDQ0 - SDQ15
RAS
CAS
WEL
WEU
TRG
Function
Address Input
RAM Inputs/Outputs
SAM Inputs/Outputs
Row Address Strobe
Column Address Strobe
Write Enable Lower
Write Enable Upper
Transfer/Output Enable
Pin Name
SC
SE
DSF
QSF
V
CC
V
SS
NC
Function
Serial Clock
SAM Port Enable
Special Function Input
Special Function Output
Power Supply (3.3 V)
Ground (0 V)
No Connection
Note:
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
2/43
BLOCK DIAGRAM
¡ Semiconductor
Column
Address
Buffer
Column Decoder
Block Write
Control
I/O Control
Column Mask
Register
Color Register
Mask Register
RAM Input
Buffer
DQ 0 - 15
RAM Output
Buffer
Sense Amp.
Row Decoder
Row
Address
Buffer
512
¥
512
¥
16
RAM ARRAY
Flash Write
Control
SAM Input
A0 - A8
Refresh
Counter
Gate
SAM
Gate
SAM
Buffer
SDQ 0 - 15
SAM Output
Buffer
Timing
Generator
RAS
CAS
TRG
WEU
/
WEL
DSF
SC
Serial Decoder
SAM
Address
Buffer
SAM Address
Counter
SE
SAM Stop
Control
QSF
SE
FEDS54V16283-05
V
CC
V
SS
MSM54V16283
3/43
FEDS54V16283-05
¡ Semiconductor
MSM54V16283
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(Note: 1)
Parameter
Input Output Voltage
Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
T
opr
T
stg
Condition
Ta = 25°C
Ta = 25°C
Ta = 25°C
—
—
Rating
–0.5 to 4.6
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
Recommended Operating Conditions
(Ta = 0°C to 70°C) (Note: 2)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
IH
V
IL
Min.
3.0
2.0
–0.3
Typ.
3.3
—
—
Max.
3.6
V
CC
+ 0.3
0.8
Unit
V
V
V
Capacitance
(V
CC
= 3.3 V ±0.3 V, f = 1 MHz, Ta = 25°C)
Parameter
Input Capacitance
Input/Output Capacitance
Output Capacitance
Symbol
C
i
C
io
C
o
(QSF)
Min.
—
—
—
Max.
6
7
7
Unit
pF
pF
pF
Note:
This parameter is periodically sampled and is not 100% tested.
DC Characteristics 1
Parameter
Output "H" Level Voltage
Output "L" Level Voltage
Input Leakage Current
Symbol
V
OH
V
OL
I
LI
Condition
I
OH
= –2 mA
I
OL
= 2 mA
0
£
V
IN
£
V
CC
All other pins not
under test = 0 V
0
£
V
OUT
£
V
CC
Output Disable
Min.
2.4
—
–10
Max.
—
0.4
10
mA
–10
10
Unit
V
Output Leakage Current
I
LO
4/43
嵌入式系统