E2L0046-17-Y1
¡ Semiconductor
¡ Semiconductor
MSM54V32126/8
DESCRIPTION
This version: Jan. 1998
MSM54V32126/8
Previous version: Dec. 1996
e
Pr
lim
y
ar
in
131,072-Word
¥
32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
The MSM54V32126/8 is a new generation Graphics DRAM organized in a 131,072-word
¥
32-bit
configuration. The technology used to fabricate the MSM54V32126/8 is OKI's CMOS silicon gate
process technology. The device operates with a single 3.3 V power supply.
FEATURES
• 131,072-word
¥
32-bit organization
• Single 3.3 V power supply,
±0.3
V tolerance
• Refresh: 512 cycles/8 ms
• Fast Page Mode with Extended Data Out (EDO)
• Write per bit (MSM54V32128 only)
• Byte write, Byte read
•
RAS
only refresh
•
CAS
before
RAS
refresh
•
CAS
before
RAS
self-refresh
• Hidden refresh
• Package:
64-pin 525 mil plastic SSOP (SSOP64-P-525-0.80-K)
(Product : MSM54V32126-xxGS-K)
(Product : MSM54V32128-xxGS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM54V32126/8-50
MSM54V32126/8-60
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
50 ns 25 ns 15 ns 15 ns
60 ns 30 ns 18 ns 18 ns
Cycle Time
(Min.)
110 ns
130 ns
Power Dissipation
Operating (Max.) Standby (Max.)
504 mW
486 mW
3.1 mW
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¡ Semiconductor
MSM54V32126/8
PIN CONFIGURATION (TOP VIEW)
V
CC
DQ0
DQ1
DQ2
DQ3
V
CC
DQ4
DQ5
DQ6
DQ7
V
SS
DQ8
DQ9
DQ10
DQ11
V
CC
DQ12
DQ13
DQ14
DQ15
V
SS
NC
NC
NC
WB*
/
WE
RAS
NC
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
7
8
9
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
V
SS
DQ31
DQ30
DQ29
DQ28
V
CC
DQ27
DQ26
DQ25
DQ24
V
SS
DQ23
DQ22
DQ21
DQ20
V
CC
DQ19
DQ18
DQ17
DQ16
V
SS
CAS1
CAS2
CAS3
CAS4
OE
A8
A7
A6
A5
A4
V
SS
64-Pin Plastic SSOP
Pin Name
A0 - A8
DQ0 - DQ31
RAS
CAS1
-
CAS4
WB*
/
WE
OE
V
CC
V
SS
NC
Function
Address Input
Data Input / Data Output
Row Address Strobe
Column Address Strobe
Write Per Bit* / Write Enable
Output Enable
Power Supply (3.3 V)
Ground (0 V)
No Connection
Note:
*:
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
MSM54V32128 only
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¡ Semiconductor
BLOCK DIAGRAM
RAS
CAS1
CAS2
CAS3
CAS4
Timing
Generator
WB
/
WE
I/O
Controller
I/O
Controller
I/O
Controller
I/O
Controller
OE
8
Output
Buffers
8
DQ0 - DQ7
8
Input
Buffers
8
8
Output
Buffers
8
DQ8 - DQ15
Column
8 Address
Buffers
Internal
Address
Counter
Row
9 Address
Buffers
8
Column Decoders
8
I/O
Selector 32
Input
Buffers
8
A0 - A8
Refresh
Control Clock
Sense Amps
32
8
9
Row
Deco-
ders
Word
Drivers
Memory
Cells
8
Input
Buffers
8
DQ16 - DQ23
Output
Buffers
8
V
CC
On-chip
V
BB
Generator
V
SS
MSM54V32126/8
8
Input
Buffers
8
DQ24 - DQ31
8
Output
Buffers
8
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¡ Semiconductor
MSM54V32126/8
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
T
opr
T
stg
Rating
–0.5 to 4.5
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
3.0
0
3.0
–0.3
Typ.
3.3
0
—
—
Max.
3.6
0
3.6
0.3
(Ta = 0°C to 70°C)
Unit
V
V
V
V
Capacitance
Parameter
Input Capacitance
Input / Output Capacitance
Symbol
C
IN
C
IO
Typ.
—
—
(V
CC
= 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz)
Max.
7
7
Unit
pF
pF
4/25
¡ Semiconductor
DC Characteristics
MSM54V32126/8
(V
CC
= 3.3 V ±0.3 V, Ta = 0°C to 70°C)
Symbol
V
OH
V
OL
I
LI
Condition
I
OH
= –0.1 mA
I
OL
= 0.1 mA
0 V
<
V
IN
<
V
CC
;
All other pins not
under test = 0 V
0 V
<
V
OUT
<
3.6 V
Output Disable
RAS, CAS
cycling,
t
RC
= Min.
RAS, CAS
≥
V
CC
– 0.2 V
RAS
= cycling,
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IL
,
CAS
cycling,
t
HPC
= Min.
RAS
= cycling,
CAS
before
RAS
RAS
= V
IL
,
CAS
= V
IL
MSM54V32126/8 MSM54V32126/8
-50
-60
Unit
Min.
Max.
V
CC
0.8
10
Min.
2.0
0
–10
Max.
V
CC
0.8
10
V
V
mA
2.0
0
–10
Note
Parameter
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Average Power
Supply Current
(Operating)
Power Supply
Current (Standby)
Average Power
Supply Current
(RAS Only Refresh)
Average Power
Supply Current
(Fast Page Mode)
Average Power
Supply Current
(CAS before
RAS
Refresh)
Average Power Supply
Current (CAS before
RAS
Self-Refresh)
I
LO
–10
10
–10
10
mA
I
CC1
—
130
—
110
mA
1, 2, 3
I
CC2
—
850
—
850
mA
I
CC3
—
130
—
110
mA
1, 2, 3
I
CC4
—
140
—
135
mA
1, 2, 4
I
CC5
—
130
—
110
mA
1, 2, 4
I
CCS
—
950
—
950
mA
1, 2
Notes:
1. Specified values are obtained with minimum cycle time.
2. I
CC
is dependent on output loading. Specified values are obtained with the output
open.
3. Address can be changed once or less while
RAS
= V
IL
.
4. Address can be changed once or less while
CAS
= V
IH
.
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