MT3S113TU
TOSHIBA Transistor
Silicon-Germanium NPN Epitaxial Planar Type
MT3S113TU
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications
2.1±0.1
1.7±0.1
0.65±0.05
+0.1
0.3 -0.05
3
0.166±0.05
Unit: mm
FEATURES
•
High Gain:|S21e| = 12.5dB (typ.) (@ f=1GHz)
2
2.0±0.1
•
Low Noise Figure:NF = 1.15dB (typ.) (@ f=1GHz)
1
2
3
1.
1.
2.
2.
3.
3.
R7
1
2
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector-current
Base-current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CES
V
CEO
V
EBO
I
C
I
B
P
C
(Note1)
T
j
T
stg
Rating
13
5.3
0.6
100
10
900
150
−55
to 150
Unit
V
V
V
mA
mA
mW
°C
°C
-
-
TOSHIBA
2-2U1B
Weight : 6.6mg (typ.)
UFM
JEDEC
JEITA
Note1:The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t))
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Start of commercial production
0.7±0.05
ベース
Base
エミッタ
Emitter
コレクタ
Collector
Marking
2008-10
1
2014-03-01
MT3S113TU
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition frequency
Insertion gain
Symbol
f
T
|S21e| (1)
|S21e| (2)
NF(1)
NF(2)
OIP3
2
2
Test Condition
V
CE
= 5V, I
C
= 50mA
V
CE
= 5V, I
C
= 50mA, f = 500MHz
V
CE
= 5V, I
C
= 50mA, f = 1GHz
V
CE
= 5V, I
C
= 50mA, f = 500MHz
V
CE
= 5V, I
C
= 50mA, f = 1GHz
V
CE
= 5V, I
C
= 50mA, f = 500MHz,
⊿f=1MHz
Min
9
⎯
10.5
⎯
⎯
30.5
Typ.
11.2
18
12.5
0.88
1.15
34.8
Max
⎯
⎯
⎯
⎯
1.45
⎯
Unit
GHz
dB
dB
dB
dB
dBmW
Noise figure
3 order intermodulation distortion output
intercept point
rd
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
Symbol
I
CBO
h
FE
C
ob
C
re
Test Condition
V
CB
= 5V, I
E
= 0
V
CE
= 5V, I
C
= 30mA
V
CB
= 5V, I
E
= 0, f = 1MHz
V
CB
= 5V, I
E
= 0, f = 1MHz (Note3)
Min
⎯
200
⎯
⎯
Typ.
⎯
⎯
1.49
0.94
Max
0.1
400
⎯
1.25
Unit
μA
⎯
pF
pF
Note 3:C
re
is measured using a 3-terminal method with capacitance bridge
Caution:
This device is sensitive to electrostatic discharge due to the high frequency transistor process of f
T
=60GHz
class is used for this product.
Please make enough tool and equipment earthed when you handle.
2
2014-03-01
MT3S113TU
h
FE
-I
C
1000
VCE=5V
I
C
-V
BE
100
VCE=3V
Collector-current I
C
(mA)
10
COMMON EMITTER
VCE=5V
Ta=25°C
DC current gain hFE
1
100
0.1
0.01
10
COMMON EMITTER
Ta=25°C
1
10
100
0.001
0
0.2
0.4
0.6
0.8
1
Collector-current I
C
(mA)
I
C
-V
CE
COMMON EMITTER
Ta=25°C
IB=520uA
Base-emitter voltage V
BE
(V)
f
T
-I
C
14
VCE=5V
Ta=25°C
Collector-current I
C
(mA)
90
80
70
60
50
40
30
20
10
0
0
1
2
3
4
5
360μA
280μA
200μA
120μA
Transition frequency f
T
(GHz)
6
100
440μA
12
10
8
6
4
2
0
40μA
1
10
100
Collector-emitter voltage V
CE
(V)
C
re
,C
ob
-V
CB
Reverse transfer capacitance C
re
(pF)
2.4
Cob
IE=0
f=1MHz
Ta=25°C
Collector-current I
C
(mA)
|S
21e
|
2
-f
40
IC=50mA
Ta=25°C
Output capacitance C
ob
(pF)
Insertion gain |S
21e
|
2
(dB)
2
1.6
1.2
0.8
0.4
0
0.1
1
Cre
30
20
10
3V
5V
10
0
0.1
1
10
Collector-base voltage V
CB
(V)
Frequency f (GHz)
3
2014-03-01
MT3S113TU
|S
21e
|
2
-I
C
20
16
12
10
8
6
4
2
0
1
10
100
f = 1GHz
VCE=3V
18 Ta=25°C
NF-I
C
2.5
VCE=3V
Ta=25°C
f = 1GHz
1.5
1.0
0.5
0.0
1
10
100
f = 500MHz
Insertion gain |S
21e
|
2
(dB)
2.0
Noise figure NF(dB)
14
f = 500MHz
Collector-current I
C
(mA)
|S
21e
|
2
-I
C
20
16
12
10
8
6
4
2
0
1
10
100
f = 1GHz
VCE=4V
18 Ta=25°C
f = 500MHz
Collector-current I
C
(mA)
NF-I
C
2.5
2.0
VCE=4V
Ta=25°C
f = 1GHz
1.5
1.0
0.5
0.0
1
10
100
Insertion gain |S
21e
|
2
(dB)
Noise figure NF(dB)
14
f = 500MHz
Collector-current I
C
(mA)
|S
21e
|
2
-I
C
20
16
12
10
8
6
4
2
0
1
10
100
f = 1GHz
VCE=5V
18 Ta=25°C
f = 500MHz
Collector-current I
C
(mA)
NF-I
C
2.5
2.0
VCE=5V
Ta=25°C
f = 1GHz
1.5
1.0
0.5
0.0
1
10
100
Insertion gain |S
21e
|
2
(dB)
Noise figure NF(dB)
14
f = 500MHz
Collector-current I
C
(mA)
Collector-current I
C
(mA)
4
2014-03-01
MT3S113TU
IM3/P
out
-P
in
Third order intermodulation distortion IM3(dBmW)
OIP
3
-I
C
35
30
20
10
0
-10
-20
-30
-40
-50
-60
-70
Third order intermodulation distortion
output intercept point OIP
3
(dBmW)
Output level P
out
(dBmW)
f1=500MHz
f2=501MHz
VCE=3V
IC=50mA
Ta=25°C
Pout
30
f1=500MHz
f2=501MHz
Pin=-15dBmW
VCE=3V
Ta=25°C
25
20
IM3
15
10
1
10
100
-50
-40
-30
-20
-10
0
10
20
Input level P
in
(dBmW)
IM3/P
out
-P
in
Third order intermodulation distortion IM3(dBmW)
Collector-current I
C
(mA)
OIP
3
-I
C
35
30
20
10
0
-10
-20
-30
-40
-50
-60
-70
Third order intermodulation distortion
output intercept point OIP
3
(dBmW)
Output level P
out
(dBmW)
f1=500MHz
f2=501MHz
VCE=4V
IC=50mA
Ta=25°C
30
Pout
f1=500MHz
f2=501MHz
Pin=-15dBmW
VCE=4V
Ta=25°C
25
20
IM3
15
10
1
10
100
-50
-40
-30
-20
-10
0
10
20
Input level P
in
(dBmW)
IM3/P
out
-P
in
Third order intermodulation distortion IM3(dBmW)
Collector-current I
C
(mA)
OIP
3
-I
C
40
30
20
10
0
-10
-20
-30
-40
-50
-60
-70
Third order intermodulation distortion
output intercept point OIP
3
(dBmW)
Output level P
out
(dBmW)
f1=500MHz
f2=501MHz
VCE=5V
IC=50mA
Ta=25°C
Pout
35
30
25
20
15
10
f1=500MHz
f2=501MHz
Pin=-15dBmW
VCE=5V
Ta=25°C
IM3
-50
-40
-30
-20
-10
0
10
20
1
10
100
Input level P
in
(dBmW)
Collector-current I
C
(mA)
5
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