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MT48LC16M16A2TG-75 L:D TR

IC DRAM 256M PARALLEL 54TSOP

器件类别:存储   

厂商名称:Micron Technology

厂商官网:http://www.mdtic.com.tw/

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器件参数
参数名称
属性值
存储器类型
易失
存储器格式
DRAM
技术
SDRAM
存储容量
256Mb (16M x 16)
时钟频率
133MHz
写周期时间 - 字,页
15ns
访问时间
5.4ns
存储器接口
并联
电压 - 电源
3 V ~ 3.6 V
工作温度
0°C ~ 70°C(TA)
安装类型
表面贴装
封装/外壳
54-TSOP(0.400",10.16mm 宽)
供应商器件封装
54-TSOP II
文档预览
256Mb: x4, x8, x16 SDRAM
Features
SDR SDRAM
MT48LC64M4A2 – 16 Meg x 4 x 4 banks
MT48LC32M8A2 – 8 Meg x 8 x 4 banks
MT48LC16M16A2 – 4 Meg x 16 x 4 banks
Features
• PC100- and PC133-compliant
• Fully synchronous; all signals registered on positive
edge of system clock
• Internal, pipelined operation; column address can
be changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, 8, or full page
• Auto precharge, includes concurrent auto precharge
and auto refresh modes
• Self refresh mode (not available on AT devices)
• Auto refresh
– 64ms, 8192-cycle refresh (commercial and
industrial)
– 16ms, 8192-cycle refresh (automotive)
• LVTTL-compatible inputs and outputs
• Single 3.3V ±0.3V power supply
Options
– 60-ball TFBGA (x4, x8) (8mm x
16mm)
– 60-ball TFBGA (x4, x8) (8mm x
16mm) Pb-free
– 54-ball VFBGA (x16) (8mm x 14 mm)
– 54-ball VFBGA (x16) (8mm x 14 mm)
Pb-free
– 54-ball VFBGA (x16) (8mm x 8 mm)
– 54-ball VFBGA (x16) (8mm x 8 mm)
Pb-free
Timing – cycle time
– 6ns @ CL = 3 (x8, x16 only)
– 7.5ns @ CL = 3 (PC133)
– 7.5ns @ CL = 2 (PC133)
Self refresh
– Standard
– Low power
Operating temperature range
– Commercial (0˚C to +70˚C)
– Industrial (–40˚C to +85˚C)
– Automotive (–40˚C to +105˚C)
Revision
Notes:
1.
2.
3.
4.
Off-center parting line.
Only available on Revision D.
Only available on Revision G.
Contact Micron for availability.
Marking
FB
BB
FG
2
BG
2
F4
3
B4
3
-6A
-75
2
-7E
None
L
2
,
4
None
IT
AT
4
:D/:G
Options
• Configurations
– 64 Meg x 4 (16 Meg x 4 x 4 banks)
– 32 Meg x 8 (8 Meg x 8 x 4 banks)
– 16 Meg x 16 (4 Meg x 16 x 4 banks)
• Write recovery (
t
WR)
t
WR = 2 CLK
• Plastic package – OCPL
1
– 54-pin TSOP II OCPL
1
(400 mil)
(standard)
– 54-pin TSOP II OCPL
1
(400 mil)
Pb-free
Table 1: Key Timing Parameters
CL = CAS (READ) latency
Speed Grade
-6A
-75
-7E
Clock
Frequency (MHz)
167
133
133
Marking
64M4
32M8
16M16
A2
TG
P
Target
t
RCD-
t
RP-CL
3-3-3
3-3-3
2-2-2
t
RCD
(ns)
t
RP
(ns)
CL (ns)
18
20
15
18
20
15
18
20
15
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. W 05/15 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
1999 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
256Mb: x4, x8, x16 SDRAM
Features
Table 2: Address Table
Parameter
Configuration
Refresh count
Row addressing
Bank addressing
Column addressing
64 Meg x 4
16 Meg x 4 x 4 banks
8K
8K A[12:0]
4 BA[1:0]
2K A[9:0], A11
32 Meg x 8
8 Meg x 8 x 4 banks
8K
8K A[12:0]
4 BA[1:0]
1K A[9:0]
16 Meg x 16
4 Meg x 16 x 4 banks
8K
8K A[12:0]
4 BA[1:0]
512 A[8:0]
Table 3: 256Mb SDR Part Numbering
Part Numbers
MT48LC64M4A2TG
MT48LC64M4A2P
MT48LC64M4A2FB
1
MT48LC64M4A2BB
1
MT48LC32M8A2TG
MT48LC32M8A2P
MT48LC32M8A2FB
1
MT48LC32M8A2BB
1
MT48LC16M16A2TG
MT48LC16M16A2P
MT48LC16M16A2FG
MT48LC16M16A2BG
Note:
Architecture
64 Meg x 4
64 Meg x 4
64 Meg x 4
64 Meg x 4
32 Meg x 8
32 Meg x 8
32 Meg x 8
32 Meg x 8
16 Meg x 16
16 Meg x 16
16 Meg x 16
16 Meg x 16
Package
54-pin TSOP II
54-pin TSOP II
60-ball FBGA
60-ball FBGA
54-pin TSOP II
54-pin TSOP II
60-ball FBGA
60-ball FBGA
54-pin TSOP II
54-pin TSOP II
54-ball FBGA
54-ball FBGA
1. FBGA Device Decoder:
www.micron.com/decoder.
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. W 05/15 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
1999 Micron Technology, Inc. All rights reserved.
256Mb: x4, x8, x16 SDRAM
Features
Contents
General Description ......................................................................................................................................... 7
Automotive Temperature .............................................................................................................................. 7
Functional Block Diagrams ............................................................................................................................... 8
Pin and Ball Assignments and Descriptions ..................................................................................................... 11
Package Dimensions ....................................................................................................................................... 15
Temperature and Thermal Impedance ............................................................................................................ 19
Electrical Specifications .................................................................................................................................. 23
Electrical Specifications – I
DD
Parameters ........................................................................................................ 25
Electrical Specifications – AC Operating Conditions ......................................................................................... 27
Functional Description ................................................................................................................................... 30
Commands .................................................................................................................................................... 31
COMMAND INHIBIT .................................................................................................................................. 31
NO OPERATION (NOP) ............................................................................................................................... 32
LOAD MODE REGISTER (LMR) ................................................................................................................... 32
ACTIVE ...................................................................................................................................................... 32
READ ......................................................................................................................................................... 33
WRITE ....................................................................................................................................................... 34
PRECHARGE .............................................................................................................................................. 35
BURST TERMINATE ................................................................................................................................... 35
REFRESH ................................................................................................................................................... 36
AUTO REFRESH ..................................................................................................................................... 36
SELF REFRESH ....................................................................................................................................... 36
Truth Tables ................................................................................................................................................... 37
Initialization .................................................................................................................................................. 42
Mode Register ................................................................................................................................................ 44
Burst Length .............................................................................................................................................. 46
Burst Type .................................................................................................................................................. 46
CAS Latency ............................................................................................................................................... 48
Operating Mode ......................................................................................................................................... 48
Write Burst Mode ....................................................................................................................................... 48
Bank/Row Activation ...................................................................................................................................... 49
READ Operation ............................................................................................................................................. 50
WRITE Operation ........................................................................................................................................... 59
Burst Read/Single Write .............................................................................................................................. 66
PRECHARGE Operation .................................................................................................................................. 67
Auto Precharge ........................................................................................................................................... 67
AUTO REFRESH Operation ............................................................................................................................. 79
SELF REFRESH Operation ............................................................................................................................... 81
Power-Down .................................................................................................................................................. 83
Clock Suspend ............................................................................................................................................... 84
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. W 05/15 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
1999 Micron Technology, Inc. All rights reserved.
256Mb: x4, x8, x16 SDRAM
Features
List of Figures
Figure 1: 64 Meg x 4 Functional Block Diagram ................................................................................................. 8
Figure 2: 32 Meg x 8 Functional Block Diagram ................................................................................................. 9
Figure 3: 16 Meg x 16 Functional Block Diagram ............................................................................................. 10
Figure 4: 54-Pin TSOP (Top View) .................................................................................................................. 11
Figure 5: 60-Ball FBGA (Top View) ................................................................................................................. 12
Figure 6: 54-Ball VFBGA (Top View) ............................................................................................................... 13
Figure 7: 54-Pin Plastic TSOP "TG/P" (400 mil) ............................................................................................... 15
Figure 8: 60-Ball TFBGA "BB/FB" (8mm x 16mm) (x4, x8) ............................................................................... 16
Figure 9: 54-Ball VFBGA "BG/FG" (8mm x 14mm) (x16) .................................................................................. 17
Figure 10: 54-Ball VFBGA "B4/F4" (8mm x 8mm) (x16) ................................................................................... 18
Figure 11: Example: Temperature Test Point Location, 54-Pin TSOP (Top View) ............................................... 21
Figure 12: Example: Temperature Test Point Location, 54-Ball VFBGA (Top View) ............................................ 21
Figure 13: Example: Temperature Test Point Location, 60-Ball FBGA (Top View) .............................................. 22
Figure 14: ACTIVE Command ........................................................................................................................ 32
Figure 15: READ Command ........................................................................................................................... 33
Figure 16: WRITE Command ......................................................................................................................... 34
Figure 17: PRECHARGE Command ................................................................................................................ 35
Figure 18: Initialize and Load Mode Register .................................................................................................. 43
Figure 19: Mode Register Definition ............................................................................................................... 45
Figure 20: CAS Latency .................................................................................................................................. 48
Figure 21: Example: Meeting
t
RCD (MIN) When 2 <
t
RCD (MIN)/
t
CK < 3 .......................................................... 49
Figure 22: Consecutive READ Bursts .............................................................................................................. 51
Figure 23: Random READ Accesses ................................................................................................................ 52
Figure 24: READ-to-WRITE ............................................................................................................................ 53
Figure 25: READ-to-WRITE With Extra Clock Cycle ......................................................................................... 54
Figure 26: READ-to-PRECHARGE .................................................................................................................. 54
Figure 27: Terminating a READ Burst ............................................................................................................. 55
Figure 28: Alternating Bank Read Accesses ..................................................................................................... 56
Figure 29: READ Continuous Page Burst ......................................................................................................... 57
Figure 30: READ – DQM Operation ................................................................................................................ 58
Figure 31: WRITE Burst ................................................................................................................................. 59
Figure 32: WRITE-to-WRITE .......................................................................................................................... 60
Figure 33: Random WRITE Cycles .................................................................................................................. 61
Figure 34: WRITE-to-READ ............................................................................................................................ 61
Figure 35: WRITE-to-PRECHARGE ................................................................................................................. 62
Figure 36: Terminating a WRITE Burst ............................................................................................................ 63
Figure 37: Alternating Bank Write Accesses ..................................................................................................... 64
Figure 38: WRITE – Continuous Page Burst ..................................................................................................... 65
Figure 39: WRITE – DQM Operation ............................................................................................................... 66
Figure 40: READ With Auto Precharge Interrupted by a READ ......................................................................... 68
Figure 41: READ With Auto Precharge Interrupted by a WRITE ........................................................................ 69
Figure 42: READ With Auto Precharge ............................................................................................................ 70
Figure 43: READ Without Auto Precharge ....................................................................................................... 71
Figure 44: Single READ With Auto Precharge .................................................................................................. 72
Figure 45: Single READ Without Auto Precharge ............................................................................................. 73
Figure 46: WRITE With Auto Precharge Interrupted by a READ ........................................................................ 74
Figure 47: WRITE With Auto Precharge Interrupted by a WRITE ...................................................................... 74
Figure 48: WRITE With Auto Precharge ........................................................................................................... 75
Figure 49: WRITE Without Auto Precharge ..................................................................................................... 76
Figure 50: Single WRITE With Auto Precharge ................................................................................................. 77
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. W 05/15 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
1999 Micron Technology, Inc. All rights reserved.
256Mb: x4, x8, x16 SDRAM
Features
Figure 51:
Figure 52:
Figure 53:
Figure 54:
Figure 55:
Figure 56:
Figure 57:
Single WRITE Without Auto Precharge ............................................................................................
Auto Refresh Mode ........................................................................................................................
Self Refresh Mode ..........................................................................................................................
Power-Down Mode ........................................................................................................................
Clock Suspend During WRITE Burst ...............................................................................................
Clock Suspend During READ Burst .................................................................................................
Clock Suspend Mode .....................................................................................................................
78
80
82
83
84
85
86
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. W 05/15 EN
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
1999 Micron Technology, Inc. All rights reserved.
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参数对比
与MT48LC16M16A2TG-75 L:D TR相近的元器件有:MT48LC16M16A2TG-75:D TR、MT48LC16M16A2TG-7E IT:D TR、MT48LC16M16A2TG-7E:D TR。描述及对比如下:
型号 MT48LC16M16A2TG-75 L:D TR MT48LC16M16A2TG-75:D TR MT48LC16M16A2TG-7E IT:D TR MT48LC16M16A2TG-7E:D TR
描述 IC DRAM 256M PARALLEL 54TSOP IC DRAM 256M PARALLEL 54TSOP IC DRAM 256M PARALLEL 54TSOP IC DRAM 256M PARALLEL 54TSOP
存储器类型 易失 易失 易失 易失
存储器格式 DRAM DRAM DRAM DRAM
技术 SDRAM SDRAM SDRAM SDRAM
存储容量 256Mb (16M x 16) 256Mb (16M x 16) 256Mb (16M x 16) 256Mb (16M x 16)
时钟频率 133MHz 133MHz 133MHz 133MHz
写周期时间 - 字,页 15ns 15ns 14ns 14ns
访问时间 5.4ns 5.4ns 5.4ns 5.4ns
存储器接口 并联 并联 并联 并联
电压 - 电源 3 V ~ 3.6 V 3 V ~ 3.6 V 3 V ~ 3.6 V 3 V ~ 3.6 V
工作温度 0°C ~ 70°C(TA) 0°C ~ 70°C(TA) -40°C ~ 85°C(TA) 0°C ~ 70°C(TA)
安装类型 表面贴装 表面贴装 表面贴装 表面贴装
封装/外壳 54-TSOP(0.400",10.16mm 宽) 54-TSOP(0.400",10.16mm 宽) 54-TSOP(0.400",10.16mm 宽) 54-TSOP(0.400",10.16mm 宽)
供应商器件封装 54-TSOP II 54-TSOP II 54-TSOP II 54-TSOP II
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A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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