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NOT RECOMENDED FOR NEW DESIGNS
1Mb: 64K x 18, 32K x 32/36
3.3V I/O, FLOW-THROUGH SYNCBURST SRAM
1Mb SYNCBURST
™
SRAM
FEATURES
• Fast clock and OE# access times
• Single +3.3V +0.3V/-0.165V power supply (V
DD
)
• Separate +3.3V +0.3V/-0.165V isolated output
buffer supply (V
DD
Q)
• SNOOZE MODE for reduced-power standby
• Common data inputs and data outputs
• Individual BYTE WRITE control and GLOBAL
WRITE
• Three chip enables for simple depth expansion
and address pipelining
• Clock-controlled and registered addresses, data
I/Os and control signals
• Internally self-timed WRITE cycle
• Burst control pin (interleaved or linear burst)
• Automatic power-down for portable applications
• 100-lead TQFP package for high density, high
speed SRAMs
• Low capacitive bus loading
• x18, x32, and x36 versions available
MT58L64L18F, MT58L32L32F,
MT58L32L36F
3.3V V
DD
, 3.3V I/O, Flow-Through
100-Pin TQFP*
*JEDEC-standard MS-026 BHA (LQFP).
OPTIONS
• Timing (Access/Cycle/MHz)
7.5ns/8.8ns/113 MHz
8.5ns/10ns/100 MHz
10ns/15ns/66 MHz
• Configurations
64K x 18
32K x 32
32K x 36
• Package
100-pin TQFP
• Operating Temperature Range
Commercial (0ºC to +70ºC)
Part Number Example:
MARKING
-7.5
-8.5
-10
MT58L64L18F
MT58L32L32F
MT58L32L36F
T
None
MT58L32L36FT-10
GENERAL DESCRIPTION
The Micron
®
SyncBurst
™
SRAM family employs
high-speed, low-power CMOS designs that are fabri-
cated using an advanced CMOS process.
The MT58L64L18F and MT58L32L32/36F 1Mb
SRAMs integrate a 64K x 18, 32K x 32, or 32K x 36 SRAM
core with advanced synchronous peripheral circuitry
and a 2-bit burst counter. All synchronous inputs pass
through registers controlled by a positive-edge-trig-
1Mb: 64K x 18, 32K x 32/36 3.3V I/O, Flow-Through SyncBurst SRAM
MT58L64L18F_B.p65 – Rev. B, Pub. 11/02
gered single clock input (CLK). The synchronous in-
puts include all addresses, all data inputs, active LOW
chip enable (CE#), two additional chip enables for easy
depth expansion (CE2, CE2#), burst control inputs
(ADSC#, ADSP#, ADV#), byte write enables (BWx#) and
global write (GW#).
Asynchronous inputs include the output enable
(OE#), snooze enable (ZZ) and clock (CLK). There is
also a burst mode pin (MODE) that selects between
interleaved and linear burst modes. The data-out (Q),
enabled by OE#, is also asynchronous. WRITE cycles
can be from one to two bytes wide (x18) or from one to
four bytes wide (x32/x36), as controlled by the write
control inputs.
Burst operation can be initiated with either address
status processor (ADSP#) or address status controller
(ADSC#) input pins. Subsequent burst addresses can
be internally generated as controlled by the burst ad-
vance pin (ADV#).
Address and write control are registered on-chip to
simplify WRITE cycles. This allows self-timed WRITE
cycles. Individual byte enables allow individual bytes
to be written.
During WRITE cycles on the x18 device, BWa# con-
trols DQa pins and DQPa; BWb# controls DQb pins and
DQPb. During WRITE cycles on the x32 and x36 de-
vices, BWa# controls DQa pins and DQPa; BWb# con-
1
©2002, Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
NOT RECOMENDED FOR NEW DESIGNS
1Mb: 64K x 18, 32K x 32/36
3.3V I/O, FLOW-THROUGH SYNCBURST SRAM
FUNCTIONAL BLOCK DIAGRAM
64K x 18
16
SA0, SA1, SA
MODE
ADV#
CLK
ADDRESS
REGISTER
16
14
16
2
SA0-SA1
SA1'
BINARY Q1
COUNTER AND
LOGIC
CLR
Q0
SA0'
ADSC#
ADSP#
BYTE “b”
WRITE REGISTER
9
BYTE “b”
WRITE DRIVER
9
64K x 9 x 2
MEMORY
ARRAY
9
18
SENSE 18
AMPS
OUTPUT
BUFFERS
18
BWb#
BWa#
BWE#
GW#
CE#
CE2
CE2#
OE#
BYTE “a”
WRITE REGISTER
9
BYTE “a”
WRITE DRIVER
DQs
DQPa
DQPb
ENABLE
REGISTER
18
INPUT
REGISTERS
2
FUNCTIONAL BLOCK DIAGRAM
32K x 32/36
15
SA0, SA1, SA
MODE
ADV#
CLK
BINARY Q1
SA1'
COUNTER
AND LOGIC
Q0
CLR
SA0'
ADDRESS
REGISTER
15
SA0-SA1
13
15
ADSC#
ADSP#
BWd#
BYTE “d”
WRITE REGISTER
BYTE “c”
WRITE REGISTER
BYTE
“d”
WRITE DRIVER
BYTE
“c”
WRITE DRIVER
BYTE
“b”
WRITE DRIVER
BYTE
“a”
WRITE DRIVER
INPUT
REGISTERS
32K x 8 x 4
(x32)
32K x 9 x 4
(x36)
SENSE
AMPS
OUTPUT
BUFFERS
BWc#
DQs
BWb#
BYTE “b”
WRITE REGISTER
MEMORY
ARRAY
BWa#
BWE#
GW#
CE#
CE2
CE2#
OE#
BYTE “a”
WRITE REGISTER
ENABLE
REGISTER
4
NOTE:
Functional Block Diagrams illustrate simplified device operation. See Truth Table, Pin Descriptions and timing diagrams for
detailed information.
1Mb: 64K x 18, 32K x 32/36 3.3V I/O, Flow-Through SyncBurst SRAM
MT58L64L18F_B.p65 – Rev. B, Pub. 11/02
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
NOT RECOMENDED FOR NEW DESIGNS
1Mb: 64K x 18, 32K x 32/36
3.3V I/O, FLOW-THROUGH SYNCBURST SRAM
GENERAL DESCRIPTION (continued)
trols DQb pins and DQPb; BWc# controls DQc pins and
DQPc; BWd# controls DQd pins and DQPd. GW# LOW
causes all bytes to be written. Parity bits are only avail-
able on the x18 and x36 versions.
Micron’s 1Mb SyncBurst SRAMs operate from a +3.3V
power supply, and all inputs and outputs are TTL-com-
patible. The device is ideally suited for 486, Pentium
®
,
680X0 and PowerPC systems and systems that benefit
from a very wide data bus. The device is also ideal in
generic 16-, 18-, 32-, 36-, 64- and 72-bit-wide applica-
tions.
Please refer to Micron’s Web site (www.micron.com/
sramds)
for the latest data sheet.
TQFP PIN ASSIGNMENT TABLE
PIN #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
x32/x36
NC/DQPc**
DQc
DQc
V
DD
Q
V
SS
NC
DQc
NC
DQc
DQb
DQc
DQb
DQc
V
SS
V
DD
Q
DQb
DQc
DQb
DQc
V
SS
V
DD
NC
V
SS
DQb
DQd
DQb
DQd
V
DD
Q
V
SS
DQb
DQd
DQb
DQd
DQPb
DQd
NC
DQd
x18
NC
NC
NC
PIN #
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
x18
x32/x36
V
SS
V
DD
Q
NC
DQd
NC
DQd
NC
NC/DQPd**
MODE
SA
SA
SA
SA
SA1
SA0
DNU
DNU
V
SS
V
DD
DNU
DNU
SA
SA
SA
SA
SA
NC/SA*
NC/SA*
PIN #
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
x32/x36
NC/DQPa**
DQa
DQa
V
DD
Q
V
SS
NC
DQa
NC
DQa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
ZZ
V
DD
NC
V
SS
DQa
DQb
DQa
DQb
V
DD
Q
V
SS
DQa
DQb
DQa
DQb
DQPa
DQb
NC
DQb
x18
NC
NC
NC
PIN #
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
x18
x32/x36
V
SS
V
DD
Q
DQb
DQb
NC/DQPb**
SA
SA
ADV#
ADSP#
ADSC#
OE#
BWE#
GW#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
BWc#
BWd#
CE2
CE#
SA
SA
NC
NC
SA
NC
NC
* Pins 49 and 50 are reserved for address expansion.
** No Connect (NC) is used on the x32 version. Parity (DQPx) is used on the x36 version.
1Mb: 64K x 18, 32K x 32/36 3.3V I/O, Flow-Through SyncBurst SRAM
MT58L64L18F_B.p65 – Rev. B, Pub. 11/02
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
NOT RECOMENDED FOR NEW DESIGNS
1Mb: 64K x 18, 32K x 32/36
3.3V I/O, FLOW-THROUGH SYNCBURST SRAM
PIN ASSIGNMENT (Top View)
100-Pin TQFP
(D-1)
SA
NC
NC
V
DD
Q
V
SS
NC
DQPa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
V
SS
NC
V
DD
ZZ
DQa
DQa
V
DD
Q
V
SS
DQa
DQa
NC
NC
V
SS
V
DD
Q
NC
NC
NC
SA
SA
ADV#
ADSP#
ADSC#
OE#
BWE#
GW#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
NC
NC
CE2
CE#
SA
SA
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
50
81
49
82
48
83
47
84
46
85
45
86
44
87
43
88
42
89
41
90
40
91
39
92
38
93
37
94
36
95
35
96
34
97
33
98
32
99
31
100
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
x18
NC/SA*
NC/SA*
SA
SA
SA
SA
SA
DNU
DNU
V
DD
V
SS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
SA
SA
ADV#
ADSP#
ADSC#
OE#
BWE#
GW#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
BWc#
BWd#
CE2
CE#
SA
SA
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
50
81
49
82
48
83
47
84
46
85
45
86
44
87
43
88
42
89
41
90
40
91
39
92
38
93
37
94
36
95
35
96
34
97
33
98
32
99
31
100
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
NC/DQPb**
DQb
DQb
V
DD
Q
V
SS
DQb
DQb
DQb
DQb
V
SS
V
DD
Q
DQb
DQb
V
SS
NC
V
DD
ZZ
DQa
DQa
V
DD
Q
V
SS
DQa
DQa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
NC/DQPa**
NC
NC
NC
V
DD
Q
V
SS
NC
NC
DQb
DQb
V
SS
V
DD
Q
DQb
DQb
V
SS
V
DD
NC
V
SS
DQb
DQb
V
DD
Q
V
SS
DQb
DQb
DQPb
NC
V
SS
V
DD
Q
NC
NC
NC
x32/x36
NC/SA*
NC/SA*
SA
SA
SA
SA
SA
DNU
DNU
V
DD
V
SS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
* Pins 49 and 50 are reserved for address expansion.
**No Connect (NC) is used on the x32 version. Parity (DQPx) is used on the x36 version.
1Mb: 64K x 18, 32K x 32/36 3.3V I/O, Flow-Through SyncBurst SRAM
MT58L64L18F_B.p65 – Rev. B, Pub. 11/02
NC/DQPc**
DQc
DQc
V
DD
Q
V
SS
DQc
DQc
DQc
DQc
V
SS
V
DD
Q
DQc
DQc
V
SS
V
DD
NC
V
SS
DQd
DQd
V
DD
Q
V
SS
DQd
DQd
DQd
DQd
V
SS
V
DD
Q
DQd
DQd
NC/DQPd**
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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