LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base–emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce both system cost and
board space. The device is housed in the SC–59 package which is designed for low
power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC–59 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
MUN2211RT1
MUN2212RT1
MUN2213RT1
MUN2214RT1
MUN2215RT1
MUN2216RT1
MUN2230RT1
MUN2231RT1
MUN2232RT1
MUN2233RT1
MUN2234RT1
NPN SILICON
BIAS RESISTOR
TRANSISTOR
3
PIN2
base
(Input)
R1
R2
PIN3
Collector
(Output)
2
1
PIN2
Emitter
(Ground)
CASE 318–03 , STYLE 1
( SC – 59 )
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ T
A
= 25°C
(1)
Derate above 25°C
Symbol
V
CBO
V
CEO
I
C
P
D
Value
50
50
100
200
1.6
Value
625
–65 to +150
260
10
Unit
Vdc
Vdc
mAdc
mW
mW/°C
Unit
°C/W
°C
°C
Sec
THERMAL CHARACTERISTICS
Rating
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes
Time in Solder Bath
Symbol
R
θ
JA
T
J
, T
stg
T
L
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
MUN2211RT1
8A
10
10
MUN2212RT1
8B
22
22
MUN2213RT1
8C
47
47
MUN2214RT1
8D
10
47
(2)
8E
10
MUN2215RT1
MUN2216RT1
(2)
8F
4.7
8G
1.0
1.0
MUN2230RT1
(2)
(2)
MUN2231RT1
8H
2.2
2.2
MUN2232RT1
(2)
8J
4.7
4.7
MUN2233RT1
(2)
8K
4.7
47
MUN2234RT1
(2)
8L
22
47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
8 8
P2–1/8
LESHAN RADIO COMPANY, LTD.
MUN2211RT1 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
I
CBO
I
CEO
I
EBO
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
50
50
35
60
80
80
160
160
3.0
8.0
15
80
80
V
CE(sat)
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
60
100
140
140
350
350
5.0
15
30
200
150
-
Max
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
-
-
-
-
-
-
-
-
-
-
-
-
-
0.25
Vdc
Unit
nAdc
nAdc
mAdc
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
=50V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
MUN2211RT1
(V
EB
= 6.0 V, I
C
= 0)
MUN2212RT1
MUN2213RT1
MUN2214RT1
MUN2215RT1
MUN2216RT1
MUN2230RT1
MUN2231RT1
MUN2232RT1
MUN2233RT1
MUN2234RT1
Collector-Base Breakdown Voltage (I
C
= 10
µA,
I
E
= 0)
Collector-Emitter Breakdown Voltage
(3)
(I
C
=2.0mA, I
B
=0)
V
(BR)CBO
V
(BR)CEO
h
FE
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
(3)
MUN2211RT1
MUN2212RT1
MUN2213RT1
MUN2214RT1
MUN2215RT1
MUN2216RT1
MUN2230RT1
MUN2231RT1
MUN2232RT1
MUN2233RT1
MUN2234RT1
Collector-Emitter Saturation Voltage (I
C
=10mA, I
E
=0.3mA)
(I
C
= 10 mA, I
B
= 5 mA)
MUN2230RT1 MUN2231RT1
(I
C
= 10 mA, I
B
= 1 mA)
MUN2215RT1 MUN2216RT1
MUN2232RT1 MUN2233RT1 MUN2234RT1
Output Voltage (on)
V
OL
(V
CC
=5.0V,V
B
=2.5V, R
L
=1.0kΩ)
MUN2211RT1
MUN2212RT1 MUN2214RT1 MUN2215RT1 MUN2216RT1
MUN2230RT1 MUN2231RT1 MUN2232RT1 MUN2233RT1
MUN2234RT1
(V
CC
=5.0V,V
B
=3.5V, R
L
= 1.0kΩ)
MUN2213RT1
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
Vdc
-
-
0.2
-
-
0.2
P2–2/8
LESHAN RADIO COMPANY, LTD.
MUN2211RT1 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Output Voltage (off) (V
CC
= 5.0V, V
B
= 0.5 V, R
L
= 1.0kΩ)
(V
CC
= 5.0V, V
B
= 0.050 V, R
L
=1.0kΩ)
MUN2230RT1
(V
CC
= 5.0V, V
B
= 0.25 V, R
L
=1.0kΩ)
MUN2215RT1
MUN2216RT1
MUN2233RT1
Input Resistor
MUN2211RT1
MUN2212RT1
MUN2213RT1
MUN2214RT1
MUN2215RT1
MUN2216RT1
MUN2230RT1
MUN2231RT1
MUN2232RT1
MUN2233RT1
MUN2234RT1
Resistor Ratio MUN2211RT1 MUN2212RT1 MUN2213RT1
MUN2214RT1
MUN2215RT1 MUN2216RT1
MUN2230RT1 MUN2231RT1 MUN2232RT1
MUN2233RT1
MUN2234RT1
Symbol
V
OH
Min
4.9
Typ
—
Max
—
Unit
Vdc
R
1
R
1
/R
2
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
0.8
0.17
—
0.8
0.055
0.38
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
1.0
0.21
—
1.0
0.1
0.47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
1.2
0.25
—
1.2
0.185
0.56
kΩ
P2–3/8
LESHAN RADIO COMPANY, LTD.
MUN2211RT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MUN2211RT1
P
D
, POWER DISSIPATION (MILLIWATTS)
250
V
CE( sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
=10
T
A
= –25°C
25°C
0.1
200
150
75°C
100
0.01
R
50
θJA
= 625°C/W
0
–50
0
50
10
150
0.001
0
20
40
60
80
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
h
FE
, DC CURRENT GAIN (NORMALIZED)
I
C
, COLLECTOR CURRENT (mA)
Figure 2. V
CE(sat)
versus I
C
1000
4
V
CE
= 10 V
f = 1 MHz
T
A
=75°C
25°C
–25°C
100
C ob , CAPACITANCE (pF)
3
l
E
= 0 V
T
A
= 25°C
2
1
10
1
10
100
0
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
100
25°C
T
A
= –25°C
10
I
C
, COLLECTOR CURRENT (mA)
10
V
in
, INPUT VOLTAGE (VOLTS)
75°C
V
O
= 0.2 V
T
A
= –25°C
25°C
75°C
1
1
0.1
0.01
V
O
= 5 V
0.001
0
1
2
3
4
5
6
7
8
9
10
0.1
0
10
20
30
40
50
V
in
, INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
P2–4/8
LESHAN RADIO COMPANY, LTD.
MUN2211RT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MUN2212RT1
10
h
FE
, DC CURRENT GAIN (NORMALIZED)
V
CE( sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1000
I
C
/I
B
=10
T
A
= –25°C
25°C
75°C
V
CE
= 10 V
T
A
=75°C
25°C
–25°C
100
1
0.1
0.01
0
20
40
60
80
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. V
CE(sat)
versus I
C
4
100
Figure 8. DC Current Gain
75°C
25°C
T
A
= –25°C
I
C
, COLLECTOR CURRENT (mA)
C ob , CAPACITANCE (pF)
f = 1 MHz
l
E
= 0 V
3
T
A
= 25°C
10
1
2
0.1
1
0.01
V
O
= 5 V
0.001
0
1
2
3
4
5
6
7
8
9
10
0
0
10
20
30
40
50
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V
in
, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V
in
, INPUT VOLTAGE (VOLTS)
V
O
= 0.2 V
T
A
= –25°C
10
75°C
25°C
1
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
P2–5/8
嵌入式系统
