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MUR410

RECTIFIER DIODE
整流二极管

器件类别:半导体    分立半导体   

厂商名称:BILIN

厂商官网:http://www.galaxycn.com/

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器件:MUR410

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器件参数
参数名称
属性值
状态
ACTIVE
二极管类型
整流二极管
文档预览
BL
FEATURES
GALAXY ELECTRICAL
MUR405 - - - MUR460
VOLTAGE RANGE: 50 --- 600 V
CURRENT: 4.0 A
SUPER FAST RECT IFIER
Low cos t
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with alcohol,Is opropanol
and s im ilar s olvents
The plas tic m aterial carries U/L recognition 94V-0
DO - 27
MECHANICAL DATA
Cas e:JEDEC DO--27,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces ,1.15 gram s
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
MUR MUR MUR MUR MUR MUR MUR MUR
UNITS
405
410
415
420
430
440
450
460
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@T
A
=75
V
RR M
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
150
105
150
200
140
200
4.0
300
210
300
400
280
400
500
350
500
600
420
600
V
V
V
A
Peak f orw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
125.0
A
Maximum instantaneous f orw ard voltage
@ 4.0A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
(Note1)
(Note2)
(Note3)
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.89
10.0
100.0
25
95
20
- 55 ----- + 150
- 55 ----- + 150
1.28
V
A
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
Operating junction temperature range
Storage temperature range
50
ns
pF
/W
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
www.galaxycn.com
Document Number 0264012
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
MUR405 - - - MUR460
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
t
rr
D.U.T.
(+)
25VDC
(approx)
(-)
1
NONIN-
DUCTIVE
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
+0.5A
0
-0.25A
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF.
JJJJ
2.RISE TIME =10ns MAX.SOURCE IM
PEDANCE=50 .
SE TIM BASE FOR 10/20 ns/cm
T E
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
INSTANTANEOUS FORWARD CURRENT
INSTANTANEOUS REVERSE CURRENT
AMPERES
FIG.3 -- TYPICAL REVERSE CHARACTERISTIC
80
40
20
8.0
4.0
2.0
0.8
0.4
0.2
0.08
0.04
0.02
0.008
0.004
0.002
0
20 40
TJ=25℃
TJ=100℃
TJ=150℃
100
MUR430-MUR460
40
20
MUR405-MUR420
10
AMPERES
4.0
2.0
1.0
0.4
0.2
0.1
0
0.4
0.8
1.2
1.6
2.0
2.4
T
J
=25
Pulse Width=300
µ
s
60 80 100120 140 160 180 200
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENTAGE OF RATED PEAK REVERSE VOLTAGE,%
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
z
FIG.5--FORWORD DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
JUNCTION CAPACITANCE,pF
1000
600
400
200
100
60
40
20
10
0.1 0.2 0.4
1
2
4
10
20
40
100
T
J
=25
f=1.0MHz
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0
25
50
75
100
125
150
175
Single Phase
Half Wave 60H
Z
Resistive or
Inductive Load
0.375"(9.5mm)Lead length
REVERSE VOLTAGE, VOLTS
AMBIENT TEMPERATURE,
www.galaxycn.com
Document Number 0264012
BL
GALAXY ELECTRICAL
2.
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参数对比
与MUR410相近的元器件有:MUR420、MUR405、MUR415。描述及对比如下:
型号 MUR410 MUR420 MUR405 MUR415
描述 RECTIFIER DIODE 4 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 4 A, 50 V, SILICON, RECTIFIER DIODE 4 A, SILICON, RECTIFIER DIODE, DO-201AD
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器件捷径:
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