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MX25L3206E

MX25L3206E DATASHEET

P/N: PM1568

REV. 1.5, DEC. 04, 2013

MX25L3206E

Contents

FEATURES .................................................................................................................................................................. 5

GENERAL DESCRIPTION ......................................................................................................................................... 6

PIN CONFIGURATIONS ............................................................................................................................................. 7

PIN DESCRIPTION ...................................................................................................................................................... 8

BLOCK DIAGRAM....................................................................................................................................................... 9

MEMORY ORGANIZATION ....................................................................................................................................... 10

Table 1. Memory Organization .......................................................................................................................... 10

DEVICE OPERATION ................................................................................................................................................ 11

Figure 1.

Serial Modes Supported ........................................................................................................11

DATA PROTECTION.................................................................................................................................................. 12

Table 2. Protected Area Sizes ............................................................................................................................ 13

Table 3. 512 bits Secured OTP Definition

......................................................................................................... 13

HOLD FEATURES ..................................................................................................................................................... 14

Figure 2. Hold Condition Operation

........................................................................................................ 14

COMMAND DESCRIPTION ....................................................................................................................................... 15

Table 4. COMMAND DEFINITION ..................................................................................................................... 15

(1) Write Enable (WREN) ................................................................................................................................... 16

(2) Write Disable (WRDI) .................................................................................................................................... 16

(3) Read Status Register (RDSR) ...................................................................................................................... 16

(4) Write Status Register (WRSR)...................................................................................................................... 17

Table 5. Protection Modes .................................................................................................................................. 18

(5) Read Data Bytes (READ) ............................................................................................................................. 19

(6) Read Data Bytes at Higher Speed (FAST_READ) ....................................................................................... 19

(7) Dual Output Mode (DREAD) ......................................................................................................................... 19

(8) Sector Erase (SE) ......................................................................................................................................... 19

(9) Block Erase (BE)........................................................................................................................................... 20

(10) Chip Erase (CE) .......................................................................................................................................... 20

(11) Page Program (PP) ..................................................................................................................................... 20

(12) Deep Power-down (DP) .............................................................................................................................. 21

(13) Release from Deep Power-down (RDP), Read Electronic Signature (RES) ............................................. 21

(14) Read Identification (RDID)

.......................................................................................................................... 22

(15) Read Electronic Manufacturer ID & Device ID (REMS) .............................................................................. 22

Table 6. ID DEFINITIONS ................................................................................................................................. 22

(16) Enter Secured OTP (ENSO) ....................................................................................................................... 22

(17) Exit Secured OTP (EXSO) .......................................................................................................................... 22

(18) Read Security Register (RDSCUR) ............................................................................................................ 23

Table 7. SECURITY REGISTER DEFINITION ................................................................................................... 23

(19) Write Security Register (WRSCUR) ............................................................................................................ 23

P/N: PM1568

REV. 1.5, DEC. 04, 2013

MX25L3206E

(20) Read SFDP Mode (RDSFDP)..................................................................................................................... 24

Read Serial Flash Discoverable Parameter (RDSFDP) Sequence .................................................................... 24

Table a. Signature and Parameter Identification Data Values

........................................................................... 25

Table b. Parameter Table (0): JEDEC Flash Parameter Tables ......................................................................... 26

Table c. Parameter Table (1): Macronix Flash Parameter Tables ....................................................................... 28

POWER-ON STATE ................................................................................................................................................... 30

ELECTRICAL SPECIFICATIONS .............................................................................................................................. 31

ABSOLUTE MAXIMUM RATINGS ..................................................................................................................... 31

Figure 3. Maximum Negative Overshoot Waveform .......................................................................................... 31

CAPACITANCE TA = 25°C, f = 1.0 MHz............................................................................................................. 31

Figure 4. Maximum Positive Overshoot Waveform ............................................................................................ 31

Figure 5. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL

.............................................................. 32

Figure 6. OUTPUT LOADING ........................................................................................................................... 32

Table 8. DC CHARACTERISTICS...................................................................................................................... 33

Table 9. AC CHARACTERISTICS ...................................................................................................................... 34

Timing Analysis ........................................................................................................................................................ 35

Figure 7. Serial Input Timing .............................................................................................................................. 35

Figure 8. Output Timing ...................................................................................................................................... 35

Figure 9. Hold Timing ......................................................................................................................................... 36

Figure 10. WP# Disable Setup and Hold Timing during WRSR when SRWD=1 ............................................... 36

Figure 11. Write Enable (WREN) Sequence (Command 06) ............................................................................. 37

Figure 12. Write Disable (WRDI) Sequence (Command 04).............................................................................. 37

Figure 13. Read Status Register (RDSR) Sequence (Command 05) ................................................................ 38

Figure 14. Write Status Register (WRSR) Sequence (Command 01)............................................................... 38

Figure 15. Read Data Bytes (READ) Sequence (Command 03) ...................................................................... 38

Figure 16. Read at Higher Speed (FAST_READ) Sequence (Command 0B)................................................... 39

Figure 17. Dual Output Read Mode Sequence (Command 3B) ......................................................................... 40

Figure 18. Sector Erase (SE) Sequence (Command 20) .................................................................................. 40

Figure 19. Block Erase (BE) Sequence (Command 52 or D8) .......................................................................... 40

Figure 20. Chip Erase (CE) Sequence (Command 60 or C7) ........................................................................... 41

Figure 21. Page Program (PP) Sequence (Command 02)................................................................................ 41

Figure 22. Deep Power-down (DP) Sequence (Command B9)......................................................................... 42

Figure 23. Release from Deep Power-down (RDP) Sequence (Command AB) ............................................... 42

Figure 24. Read Electronic Signature (RES) Sequence (Command AB) .......................................................... 42

Figure 25. Read Identification (RDID) Sequence (Command 9F)

...................................................................... 43

Figure 26. Read Electronic Manufacturer & Device ID (REMS) Sequence (Command 90).............................. 43

Figure 27. Read Security Register (RDSCUR) Sequence (Command 2B) ........................................................ 44

Figure 28. Write Security Register (WRSCUR) Sequence (Command 2F) ....................................................... 44

Figure 29. Program/Erase flow with read array data

.......................................................................................... 45

P/N: PM1568

REV. 1.5, DEC. 04, 2013

MX25L3206E

Figure 30. Power-up Timing ............................................................................................................................... 46

Table 10. Power-Up Timing ............................................................................................................................... 46

OPERATING CONDITIONS ....................................................................................................................................... 47

Figure 31. AC Timing at Device Power-Up ......................................................................................................... 47

Figure 32. Power-Down Sequence .................................................................................................................... 48

ERASE AND PROGRAMMING PERFORMANCE .................................................................................................... 49

DATA RETENTION .................................................................................................................................................... 49

LATCH-UP CHARACTERISTICS .............................................................................................................................. 49

ORDERING INFORMATION ...................................................................................................................................... 50

PART NAME DESCRIPTION ..................................................................................................................................... 51

PACKAGE INFORMATION ........................................................................................................................................ 52

REVISION HISTORY ................................................................................................................................................. 58

P/N: PM1568

REV. 1.5, DEC. 04, 2013

MX25L3206E

32M-BIT [x 1 / x 2] CMOS SERIAL FLASH

FEATURES

GENERAL

• Single Power Supply Operation

- 2.7 to 3.6 volt for read, erase, and program operations

• Serial Peripheral Interface compatible -- Mode 0 and Mode 3

•

33,554,432 x 1 bit structure or 16,777,216 x 2 bits (Dual Output mode) structure

• 1024 Equal Sectors with 4K byte each

- Any Sector can be erased individually

• 64 Equal Blocks with 64K byte each

- Any Block can be erased individually

• Program Capability

- Byte base

- Page base (256 bytes)

• Latch-up protected to 100mA from -1V to Vcc +1V

PERFORMANCE

• High Performance

- Fast access time: 86MHz serial clock

- Serial clock of Dual Output mode : 80MHz

- Fast program time: 0.6ms(typ.) and 3ms(max.)/page

- Byte program time: 9us (typical)

- Fast erase time: 40ms(typ.) /sector ; 0.4s(typ.) /block

• Low Power Consumption

- Low active read current: 25mA(max.) at 86MHz

- Low active programming current: 15mA (typ.)

- Low active sector erase current: 9mA (typ.)

- Standby current: 15uA (max.)

- Deep power-down mode 2uA (typical)

• Typical 100,000 erase/program cycles

• 20 years of data retention

SOFTWARE FEATURES

• Input Data Format

- 1-byte Command code

• Advanced Security Features

- Block lock protection

The BP3~BP0 status bit defines the size of the area to be software protection against program and erase instruc-

tions

- Additional 512 bits secured OTP for unique identifier

• Auto Erase and Auto Program Algorithm

Automatically erases and verifies data at selected sector

Automatically programs and verifies data at selected page by an internal algorithm that automatically times the

program pulse widths (Any page to be programed should have page in the erased state first)

P/N: PM1568

REV. 1.5, DEC. 04, 2013

参数对比

与MX25L3206EXCI-12G相近的元器件有：MX25L3206EPI-12G、MX25L3206EZUI-12G、MX25L3206EM2I-12G、MX25L3206EZNI-12G、MX25L3206EMI-12G。描述及对比如下：

型号	MX25L3206EXCI-12G	MX25L3206EPI-12G	MX25L3206EZUI-12G	MX25L3206EM2I-12G	MX25L3206EZNI-12G	MX25L3206EMI-12G
描述	IC FLASH 32M SPI 86MHZ 24CSPBGA	Flash, 16MX2, PDIP8, 0.300 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, MS-001, DIP-8	16M X 2 FLASH 3.3V PROM, PDSO8	IC FLASH 32M SPI 86MHZ 8SOP	IC FLASH 32M SPI 86MHZ 8WSON	IC FLASH 32M SPI 86MHZ 16SOP
是否Rohs认证	符合	符合	符合	符合	符合	符合
厂商名称	Macronix	Macronix	Macronix	Macronix	Macronix	Macronix
包装说明	TBGA, BGA24,5X5,40	DIP, DIP8,.3	HVSON, SOLCC8,.15,32	SOP, SOP8,.31	6 X 5 MM, 0.80 MM HEIGHT, 1.27 PITCH, HALOGEN FREE AND ROHS COMPLIANT, MO-220, WSON-8	SOP, SOP16,.4
Reach Compliance Code	unknown	unknow	unknow	compliant	unknown	compliant
备用内存宽度	1	1	1	1	1	1
最大时钟频率 (fCLK)	86 MHz	86 MHz	86 MHz	86 MHz	86 MHz	86 MHz
数据保留时间-最小值	20	20	20	20	20	20
耐久性	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles
JESD-30 代码	R-PBGA-B24	R-PDIP-T8	S-PDSO-N8	R-PDSO-G8	R-PDSO-N8	R-PDSO-G16
长度	8 mm	9.27 mm	4 mm	5.28 mm	6 mm	10.3 mm
内存密度	33554432 bit	33554432 bi	33554432 bi	33554432 bit	33554432 bit	33554432 bit
内存集成电路类型	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
内存宽度	2	2	2	2	2	2
功能数量	1	1	1	1	1	1
端子数量	24	8	8	8	8	16
字数	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words
字数代码	16000000	16000000	16000000	16000000	16000000	16000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	16MX2	16MX2	16MX2	16MX2	16MX2	16MX2
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TBGA	DIP	HVSON	SOP	HVSON	SOP
封装等效代码	BGA24,5X5,40	DIP8,.3	SOLCC8,.15,32	SOP8,.31	SOLCC8,.25	SOP16,.4
封装形状	RECTANGULAR	RECTANGULAR	SQUARE	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE	IN-LINE	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SMALL OUTLINE
并行/串行	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL
峰值回流温度（摄氏度）	NOT SPECIFIED	260	260	260	260	260
电源	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V
编程电压	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	5.33 mm	0.6 mm	2.16 mm	0.8 mm	2.65 mm
串行总线类型	SPI	SPI	SPI	3-WIRE	SPI	SPI
最大待机电流	0.00002 A	0.00002 A	0.00002 A	0.00004 A	0.00002 A	0.00002 A
最大压摆率	0.025 mA	0.025 mA	0.025 mA	0.025 mA	0.025 mA	0.025 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
标称供电电压 (Vsup)	3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	NO	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子形式	BALL	THROUGH-HOLE	NO LEAD	GULL WING	NO LEAD	GULL WING
端子节距	1 mm	2.54 mm	0.8 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	BOTTOM	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	40	40	40	40	40
类型	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
宽度	6 mm	7.62 mm	4 mm	5.23 mm	5 mm	7.52 mm
写保护	HARDWARE/SOFTWARE	HARDWARE/SOFTWARE	HARDWARE/SOFTWARE	HARDWARE/SOFTWARE	HARDWARE/SOFTWARE	HARDWARE/SOFTWARE
Factory Lead Time	16 weeks	-	16 weeks	16 weeks	16 weeks	16 weeks
是否无铅	-	不含铅	不含铅	不含铅	不含铅	不含铅
零件包装代码	-	DIP	SON	SOIC	QFN	SOIC
针数	-	8	8	8	8	16
ECCN代码	-	EAR99	EAR99	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A
JESD-609代码	-	-	e3	e3	e3	e3
湿度敏感等级	-	-	3	3	3	3
端子面层	-	-	Matte Tin (Sn) - annealed	Matte Tin (Sn)	Matte Tin (Sn)	Tin (Sn)

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