NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N02L163WN1A
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128Kx16 bit
Overview
The N02L163WN1A is an integrated memory
device containing a 2 Mbit Static Random Access
Memory organized as 131,072 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The base design is the same as
NanoAmp’s N02L1618N1A, which is processed to
operate at lower voltages. The device operates
with a single chip enable (CE) control and output
enable (OE) to allow for easy memory expansion.
Byte controls (UB and LB) allow the upper and
lower bytes to be accessed independently. The
N02L163WN1A is optimal for various applications
where low-power is critical such as battery backup
and hand-held devices. The device can operate
over a very wide temperature range of -40
o
C to
+85
o
C and is available in JEDEC standard
packages compatible with other standard 128Kb x
16 SRAMs.
Features
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
2.0µA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
0.8mA at 3.0V and 1µs (Typical)
• Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
• Very fast output enable access time
30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
able
Product Family
Part Number
N02L163WN1AB
Package
Type
48 - BGA
Operating
Temperature
-40
o
C to +85
o
C
Power
Supply (Vcc)
Speed
Standby
Operating
Current (I
SB
), Current (Icc),
Max
Max
20
µA
4 mA @ 1MHz
N02L163WN1AT 44 - TSOP II
2.3V - 3.6V
55ns @ 2.7V
70ns @ 2.3V
Pin Configurations
A
4
A
3
A
2
A
1
A
0
CE
I/O
0
I/O
1
I/O
2
I/O
3
VCC
VSS
I/O
4
I/O
5
I/O
6
I/O
7
WE
A
16
A
15
A
14
A
13
A
12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
PIN
ONE
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
5
A
6
A
7
OE
UB
LB
I/O
15
I/O
14
I/O
13
I/O
12
VSS
VCC
I/O
11
I/O
10
I/O
9
I/O
8
NC
A
8
A
9
A
10
A
11
NC
Pin Descriptions
1
A
B
C
D
E
F
G
H
LB
I/O
8
I/O
9
V
SS
V
CC
2
OE
UB
I/O
10
I/O
11
I/O
12
3
A
0
A
3
A
5
NC
NC
A
14
A
12
A
9
4
A
1
A
4
A
6
A
7
A
16
A
15
A
13
A
10
5
A
2
CE
I/O
1
I/O
3
I/O
4
I/O
5
WE
A
11
6
NC
I/O
0
I/O
2
V
CC
V
SS
I/O
6
I/O
7
NC
Pin Name
A
0
-A
16
WE
CE
OE
LB
UB
I/O
0
-I/O
15
NC
V
CC
V
SS
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Not Connected
Power
Ground
N02L163WN1A
TSOP
I/O
14
I/O
13
I/O
15
NC
NC
A
8
48 Pin BGA (top)
6 x 8 mm
Stock No. 23116-10 1/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1
NanoAmp Solutions, Inc.
Functional Block Diagram
N02L163WN1A
Address
Inputs
A
0
- A
3
Word
Address
Decode
Logic
Word Mux
Input/
Output
Mux
and
Buffers
Address
Inputs
A
4
- A
16
Page
Address
Decode
Logic
8K Page
x 16 word
x 16 bit
RAM Array
I/O
0
- I/O
7
I/O
8
- I/O
15
CE
WE
OE
UB
LB
Control
Logic
Functional Description
CE
H
L
L
L
L
WE
X
X
L
H
H
OE
X
X
X
3
L
H
UB
X
H
L
1
L
1
X
LB
X
H
L
1
L
1
X
I/O
0
- I/O
151
High Z
High Z
Data In
Data Out
High Z
MODE
Standby
2
Active
Write
3
Read
Active
POWER
Standby
Active
Active
Active
Active
1. When UB and LB are in select mode (low), I/O
0
- I/O
15
are affected as shown. When LB only is in the select mode only I/O
0
- I/O
7
are affected as shown. When UB is in the select mode only I/O
8
- I/O
15
are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance
1
Item
Input Capacitance
I/O Capacitance
Symbol
C
IN
C
I/O
Test Condition
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
Min
Max
8
8
Unit
pF
pF
1. These parameters are verified in device characterization and are not 100% tested
Stock No. 23116-10 1/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2
NanoAmp Solutions, Inc.
Absolute Maximum Ratings
1
Item
Voltage on any pin relative to V
SS
Voltage on V
CC
Supply Relative to V
SS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
Symbol
V
IN,OUT
V
CC
P
D
T
STG
T
A
T
SOLDER
N02L163WN1A
Rating
–0.3 to V
CC
+0.3
–0.3 to 4.5
500
–40 to 125
-40 to +85
240
o
C, 10sec(Lead only)
Unit
V
V
mW
o
o
C
C
o
C
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Supply Voltage
Data Retention Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Read/Write Operating Supply Current
@ 1
µs
Cycle Time
2
Read/Write Operating Supply Current
@ 70 ns Cycle Time
2
Page Mode Operating Supply Current
@ 70ns Cycle Time
2
(Refer to Power
Savings with Page Mode Operation
diagram)
Read/Write Quiescent Operating Sup-
ply Current
3
Symbol
V
CC
V
DR
V
IH
V
IL
V
OH
V
OL
I
LI
I
LO
I
CC1
I
CC2
I
OH
= 0.2mA
I
OL
= -0.2mA
V
IN
= 0 to V
CC
OE = V
IH
or Chip Disabled
V
CC
=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0
V
CC
=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0
V
CC
=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0
V
CC
=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0,
f=0
V
IN
= V
CC
or 0V
Chip Disabled
t
A
= 85
o
C, VCC = 3.6 V
V
CC
= 1.8V, V
IN
= V
CC
or 0
Chip Disabled, t
A
= 85
o
C
2.0
2.0
12
Chip Disabled
2
Test Conditions
Min.
2.3
1.8
1.8
–0.3
V
CC
–0.2
0.2
0.5
0.5
4.0
16.0
V
CC
+0.3
0.6
Typ
1
Max
3.6
Unit
V
V
V
V
V
V
µA
µA
mA
mA
I
CC3
4
mA
I
CC4
3.0
mA
Maximum Standby Current
3
I
SB1
20
µA
Maximum Data Retention Current
3
I
DR
10
µA
1. Typical values are measured at Vcc=Vcc Typ., T
A
=25°C and are not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
3. This device assumes a standby mode if the chip is disabled (CE high). In order to achieve low standby current all inputs must be
within 0.2 volts of either VCC or VSS
Stock No. 23116-10 1/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
3
NanoAmp Solutions, Inc.
Power Savings with Page Mode Operation (WE
=
V
IH
)
N02L163WN1A
Page Address (A4 - A16 )
Open page
Word Address (A0 - A3)
Word 1
Word 2
...
Word 16
CE
OE
LB, UB
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
Stock No. 23116-10 1/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
4
NanoAmp Solutions, Inc.
Timing Test Conditions
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
N02L163WN1A
0.1V
CC
to 0.9 V
CC
5ns
0.5 V
CC
CL = 30pF
-40 to +85
o
C
Timing
2.3 - 3.6 V
Item
Read Cycle Time
Address Access Time
Chip Enable to Valid Output
Output Enable to Valid Output
Byte Select to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Byte Select to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Byte Select Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Byte Select to End of Write
Write Pulse Width
Address Setup Time
Write Recovery Time
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
Symbol
Min.
t
RC
t
AA
t
CO
t
OE
t
LB
, t
UB
t
LZ
t
OLZ
t
LBZ
, t
UBZ
t
HZ
t
OHZ
t
LBHZ
, t
UBHZ
t
OH
t
WC
t
CW
t
AW
t
LBW
, t
UBW
t
WP
t
AS
t
WR
t
WHZ
t
DW
t
DH
t
OW
40
0
10
10
5
10
0
0
0
10
70
50
50
50
40
0
0
20
35
0
10
20
20
20
70
70
70
35
35
10
5
10
0
0
0
10
55
40
40
40
40
0
0
20
20
20
20
Max.
Min.
55
55
55
30
30
Max.
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2.7 - 3.6 V
Units
Stock No. 23116-10 1/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
5
