An
IXYS
Company
Provisional Data
Development Type No.: NX058QK200-220
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
MAXIMUM
LIMITS
2000-2200
2000-2200
2000-2200
2100-2300
Wespack
Phase Control Thyristor
Types N1651QK200 to N1651QK220
Repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
(continuous, 50Hz)
(repetitive, 50Hz, 60s)
(non-repetitive)
Page 1 of 11
OTHER RATINGS
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(RMS)M
I
T(d.c.)
I
TSM
I
TSM2
It
It
2
2
Maximum average on-state current, T
sink
=55°C, (note 2)
Maximum average on-state current. T
sink
=85°C, (note 2)
Maximum average on-state current. T
sink
=85°C, (note 3)
Nominal RMS on-state current, T
sink
=25°C, (note 2)
D.C. on-state current, T
sink
=25°C, (note 4)
Peak non-repetitive surge t
p
=10ms, V
rm
=60%V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
rm
≤10V,
(note 5)
2
2
(di/dt)
cr
V
RGM
P
GM
T
j op
T
stg
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
P
G(AV)
Operating temperature range
Storage temperature range
Provisional Data Sheet. Types N1651QK200 to N1651QK220 Issue 1
I t capacity for fusing t
p
=10ms, V
rm
=60%V
RRM
, (note 5)
I t capacity for fusing t
p
=10ms, V
rm
≤10V,
(note 5)
Critical rate of rise of on-state current (note 6)
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Cathode side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C T
j
initial.
6)
V
D
=67% V
DRM
, I
TM
=2000A, I
FG
=2A, t
r
≤0.5µs,
T
case
=125°C.
August, 2005
UNITS
V
V
V
V
WESTCODE
Date:- 1 Aug, 2005
Data Sheet Issue:- 1
MAXIMUM
LIMITS
1651
1138
591
3253
2836
17.3
19.0
1.50×10
1.81×10
100
200
400
5
4
30
-40 to +125
-40 to +150
6
6
UNITS
A
A
A
A
A
kA
kA
As
As
A/µs
V
W
W
°C
°C
2
2
WESTCODE
An IXYS Company
Characteristics
Wespack
Phase Control Thyristor Types N1651QK200 to N1651QK220
V
TM
V
TM
V
T0
r
T
I
DRM
I
RRM
V
GT
I
GT
V
GD
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rr
t
rr
t
q
Maximum peak on-state voltage
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Gate-controlled turn-on delay time
Turn-on time
Recovered charge
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time
Turn-off time
-
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.60
2.65
1.060
0.317
-
100
3.0
I
TM
=1700A
I
TM
=5000A
V
D
=10V, I
T
=3A
August, 2005
PARAMETER
MIN.
TYP.
MAX. TEST CONDITIONS
(Note 1)
UNITS
V
V
V
mΩ
V/µs
mA
mA
V
mA
V
mA
µs
µs
µC
µC
A
µs
µs
K/W
K/W
K/W
kN
g
R
thJK
Thermal resistance, junction to heatsink
F
W
t
Mounting force
Weight
Notes:-
1)
Unless otherwise indicated T
j
=125
°
C.
2)
For other clamp forces, please consult factory.
Provisional Data Sheet. Types N1651QK200 to N1651QK220 Issue 1
1550
120
26
2000
-
-
-
-
-
300
-
-
450
-
-
-
-
-
-
-
16
-
-
20
-
200
Page 2 of 11
Rated V
DRM
-
-
100
300
Rated V
RRM
T
j
=25°C
-
-
0.25
Rated V
DRM
-
1000
1.5
-
T
j
=25°C
0.6
1.2
2.5
2600
0.0180 Double side cooled
0.0303 Anode side cooled
0.0444 Cathode side cooled
Note 2.
(dv/dt)
cr
Critical rate of rise of off-state voltage
V
D
=80% V
DRM
, linear ramp, gate o/c
V
D
=67% V
DRM
, I
T
=2000A, di/dt=10A/µs,
I
FG
=2A, t
r
=0.5µs, T
j
=25°C
I
TM
=1000A, t
p
=1000µs, di/dt=10A/µs,
V
r
=50V
I
TM
=1000A, t
p
=1000µs, di/dt=10A/µs,
V
r
=50V, V
dr
=80%V
DRM
, dV
dr
/dt=20V/µs
I
TM
=1000A, t
p
=1000µs, di/dt=10A/µs,
V
r
=50V, V
dr
=80%V
DRM
, dV
dr
/dt=200V/µs
WESTCODE
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Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
20
22
V
DRM
V
DSM
V
RRM
V
2000
2200
Wespack
Phase Control Thyristor Types N1651QK200 to N1651QK220
V
RSM
V
2100
2300
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
j
below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 400A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 200A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
I
GM
4A/µs
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
t
p1
Page 3 of 11
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
The magnitude of I
GM
should be between five and ten times I
GT
, which is shown on page 2. Its duration
(t
p1
) should be 20µs or sufficient to allow the anode current to reach ten times I
L
, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
G
should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times I
GT
.
Provisional Data Sheet. Types N1651QK200 to N1651QK220 Issue 1
I
G
V
D
V
R
DC V
1250
1350
August, 2005
WESTCODE
An IXYS Company
8.0 Computer Modelling Parameters
8.1 Device Dissipation Calculations
Wespack
Phase Control Thyristor Types N1651QK200 to N1651QK220
I
AV
−
V
T
0
+
V
T
0
+
4
⋅
ff
⋅
r
T
⋅
W
AV
=
2
⋅
ff
2
⋅
r
T
2
2
W
AV
and:
∆
T
=
T
j
max
−
T
K
Where V
T0
=1.060V, r
T
=0.317mΩ,
Supplementary Thermal Impedance
Conduction Angle
Square wave Double Side Cooled
Square wave Cathode Side Cooled
Sine wave Double Side Cooled
Sine wave Cathode Side Cooled
30°
60°
90°
0.0269
0.0531
0.0497
0.0246
0.0237
0.0208
120°
180°
0.0217
0.0202
0.0501
0.0485
0.0475
0.0463
0.0221
0.0189
0.0180
0.0470
0.0460
0.0455
0.0444
Form Factors
2
60°
90°
120°
1.73
1.88
180°
1.41
1.57
2.45
2.78
2.22
125°C Coefficients
A
B
C
D
0.4502948
0.08416794
2.78021×10
-4
-3
R
th
= Supplementary thermal impedance, see table below and
ff
= Form factor, see table below.
0.0245
Conduction Angle
Square wave
Sine wave
30°
3.46
3.98
25°C Coefficients
0.8500422
A
B
0.01104288
C
D
1.74162×10
-4
8.2 Calculating V
T
using ABCD Coefficients
The on-state characteristic I
T
vs. V
T
, on page 6 is represented in two ways;
(i)
the well established V
T0
and r
T
tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for V
T
in
terms of I
T
given below:
7.431773×10
-3
Provisional Data Sheet. Types N1651QK200 to N1651QK220 Issue 1
V
T
=
A
+
B
⋅
ln
(
I
T
)
+
C
⋅
I
T
+
D
⋅
I
T
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for V
T
agree with the true device characteristic over a current range, which is limited to
that plotted.
1.236829×10
Page 4 of 11
=
270°
d.c.
0.0180
0.0444
0.0188
0.0452
270°
1.15
d.c.
1
August, 2005
∆
T
R
th
WESTCODE
An IXYS Company
8.3 D.C. Thermal Impedance Calculation
Wespack
Phase Control Thyristor Types N1651QK200 to N1651QK220
The coefficients for this device are shown in the tables below:
D.C. Double Side Cooled
Term
1
0.01021443
0.2287021
2
3
-3
Where
p = 1
to
n, n
is the number of terms in the series and:
t = Duration of heating pulse in seconds.
r
t
= Thermal resistance at time t.
r
p
= Amplitude of p
th
term.
τ
p
= Time Constant of r
th
term.
r
p
3.690335×10
0.08661469
2.456372×10
0.02748645
τ
p
Term
1
2
3
1.779034×10
0.9710862
-3
D.C. Cathode Side Cooled
3.317573×10
0.0978218
-3
r
p
0.0344005
τ
p
1.4043858
9.0 Reverse recovery ratings
(i) Q
ra
is based on 50% I
rm
chord as shown in Fig. 1
(ii) Q
rr
is based on a 150µs integration time i.e.
(iii)
150
µ
s
Q
rr
=
∫
i
0
rr
.
dt
t
1
K Factor
=
t
2
Provisional Data Sheet. Types N1651QK200 to N1651QK220 Issue 1
Page 5 of 11
4
-3
-3
-3
−
t
τ
r
t
=
∑
r
p
⋅
1
−
e
p
p
=
1
p
=
n
1.495440×10
2.550069×10
4
-3
5
8.936996×10
1.285346×10
-4
-3
5.000175×10
0.03880263
Fig. 1
August, 2005
