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NCP45520IMNTWG-L

Power Switch ICs - Power Distribution NCP45520IMNTWG-L

器件类别:模拟混合信号IC    驱动程序和接口   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
包装说明
DFN-8
针数
8
制造商包装代码
506CC
Reach Compliance Code
compliant
Factory Lead Time
21 weeks
Samacsys Description
ecoSWITCH Advanced Load ManagementnControlled Load Switch with Low RON
内置保护
TRANSIENT; OVER CURRENT; THERMAL; UNDER VOLTAGE
接口集成电路类型
BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码
S-PDSO-N8
JESD-609代码
e3
长度
2 mm
湿度敏感等级
3
功能数量
1
端子数量
8
最高工作温度
85 °C
最低工作温度
-40 °C
输出电流流向
SINK
封装主体材料
PLASTIC/EPOXY
封装代码
HVSON
封装形状
SQUARE
封装形式
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
座面最大高度
1 mm
最大供电电压
5.5 V
最小供电电压
3 V
标称供电电压
3.3 V
电源电压1-最大
13.5 V
电源电压1-分钟
0.5 V
电源电压1-Nom
1.8 V
表面贴装
YES
温度等级
INDUSTRIAL
端子面层
Tin (Sn)
端子形式
NO LEAD
端子节距
0.5 mm
端子位置
DUAL
宽度
2 mm
Base Number Matches
1
参考设计
展开全部 ↓
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NCP45520, NCP45521
ecoSWITCHt
Advanced Load Management
Controlled Load Switch with Low R
ON
The NCP4552x series of load switches provide a component and
area-reducing solution for efficient power domain switching with
inrush current limit via soft start. In addition to integrated control
functionality with ultra low on−resistance, these devices offer system
safeguards and monitoring via fault protection and power good
signaling. This cost effective solution is ideal for power management
and hot-swap applications requiring low power consumption in a
small footprint.
Features
http://onsemi.com
R
ON
TYP
9.5 mW
10.1 mW
12.8 mW
V
CC
3.3 V
3.3 V
3.3 V
V
IN
1.8 V
5.0 V
12 V
I
MAX
10.5 A
Advanced Controller with Charge Pump
Integrated N-Channel MOSFET with Low R
ON
Input Voltage Range 0.5 V to 13.5 V
Soft-Start via Controlled Slew Rate
Adjustable Slew Rate Control (NCP45521)
Power Good Signal (NCP45520)
Thermal Shutdown
Undervoltage Lockout
Short-Circuit Protection
Extremely Low Standby Current
Load Bleed (Quick Discharge)
This is a Pb−Free Device
1
DFN8, 2x2
CASE 506CC
MARKING DIAGRAM
1
XX MG
G
XX = PH for NCP45520−H
= PL for NCP45520−L
= SH for NCP45521−H
= SL for NCP45521−L
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
V
IN
Typical Applications
Portable Electronics and Systems
Notebook and Tablet Computers
Telecom, Networking, Medical, and Industrial Equipment
Set−Top Boxes, Servers, and Gateways
Hot Swap Devices and Peripheral Ports
V
CC
EN
PG*
PIN CONFIGURATION
Thermal,
Undervoltage
&
Short−Circuit
Protection
Bandgap
&
Biases
Control
Logic
V
IN
EN
V
CC
1
8
V
OUT
V
OUT
PG or SR
BLEED
2
9: V
IN
3
4
(Top View)
7
6
5
Charge
Pump
Delay and
Slew Rate
Control
GND
SR*
GND
BLEED
V
OUT
ORDERING INFORMATION
See detailed ordering and shipping information on page 14 of
this data sheet.
Figure 1. Block Diagram
(*Note: either PG or SR available for each part)
©
Semiconductor Components Industries, LLC, 2014
1
September, 2014 − Rev. 3
Publication Order Number:
NCP45520/D
NCP45520, NCP45521
Table 1. PIN DESCRIPTION
Pin
1, 9
2
Name
V
IN
EN
Function
Drain of MOSFET (0.5 V – 13.5 V), Pin 1 must be connected to Pin 9
NCP45520−H & NCP45521−H − Active−high digital input used to turn on the MOSFET, pin
has an internal pull down resistor to GND
NCP45520−L & NCP45521−L − Active−low digital input used to turn on the MOSFET, pin has
an internal pull up resistor to V
CC
3
4
5
6
V
CC
GND
BLEED
PG
Supply voltage to controller (3.0 V − 5.5 V)
Controller ground
Load bleed connection, must be tied to V
OUT
either directly or through a resistor
1 kW
NCP45520 − Active−high, open−drain output that indicates when the gate of the MOSFET is
fully charged, external pull up resistor
1 kW to an external voltage source required; tie to
GND if not used
NCP45521 − Slew rate adjustment; float if not used
Source of MOSFET connected to load
SR
7, 8
V
OUT
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating
Supply Voltage Range
Input Voltage Range
Output Voltage Range
EN Digital Input Range
PG Output Voltage Range (Note 1)
Thermal Resistance, Junction−to−Ambient, Steady State (Note 2)
Thermal Resistance, Junction−to−Ambient, Steady State (Note 3)
Thermal Resistance, Junction−to−Case (V
IN
Paddle)
Continuous MOSFET Current @ T
A
= 25°C (Notes 2 and 4)
Continuous MOSFET Current @ T
A
= 25°C (Notes 3 and 4)
Total Power Dissipation @ T
A
= 25°C (Note 2)
Derate above T
A
= 25°C
Total Power Dissipation @ T
A
= 25°C (Note 3)
Derate above T
A
= 25°C
Storage Temperature Range
Lead Temperature, Soldering (10 sec.)
ESD Capability, Human Body Model (Notes 5 and 6)
ESD Capability, Machine Model (Note 5)
ESD Capability, Charged Device Model (Note 5)
Latch−up Current Immunity (Notes 5 and 6)
Symbol
V
CC
V
IN
V
OUT
V
EN
V
PG
R
θJA
R
θJA
R
θJC
I
MAX
I
MAX
P
D
P
D
T
STG
T
SLD
ESD
HBM
ESD
MM
ESD
CDM
LU
Value
−0.3 to 6
−0.3 to 18
−0.3 to 18
−0.3 to (V
CC
+ 0.3)
−0.3 to 6
40.0
72.7
5.3
10.5
7.8
2.50
24.9
1.37
13.8
−40 to 150
260
3.0
200
1.0
100
Unit
V
V
V
V
V
°C/W
°C/W
°C/W
A
A
W
mW/°C
W
mW/°C
°C
°C
kV
V
kV
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. NCP45520 only. PG is an open−drain output that requires an external pull up resistor
1 kW to an external voltage source.
2. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
4. Ensure that the expected operating MOSFET current will not cause the Short−Circuit Protection to turn the MOSFET off undesirably.
5. Tested by the following methods @ T
A
= 25°C:
ESD Human Body Model tested per JESD22−A114
ESD Machine Model tested per JESD22−A115
ESD Charged Device Model tested per JESD22−C101
Latch−up Current tested per JESD78
6. Rating is for all pins except for V
IN
and V
OUT
which are tied to the internal MOSFET’s Drain and Source. Typical MOSFET ESD performance
for V
IN
and V
OUT
should be expected and these devices should be treated as ESD sensitive.
http://onsemi.com
2
NCP45520, NCP45521
Table 3. OPERATING RANGES
Rating
Supply Voltage
Input Voltage
Ground
Ambient Temperature
Junction Temperature
Symbol
V
CC
V
IN
GND
T
A
T
J
−40
−40
Min
3
0.5
Max
5.5
13.5
0
85
125
Unit
V
V
V
°C
°C
Table 4. ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
MOSFET
On−Resistance
V
CC
= 3.3 V; V
IN
= 1.8 V
V
CC
= 3.3 V; V
IN
= 5 V
V
CC
= 3.3 V; V
IN
= 12 V
Leakage Current (Note 8)
CONTROLLER
Supply Standby Current (Note 9)
V
EN
= 0 V; V
CC
= 3 V
V
EN
= 0 V; V
CC
= 5.5 V
Supply Dynamic Current (Note 10)
V
EN
= V
CC
= 3 V; V
IN
= 12 V
V
EN
= V
CC
= 5.5 V; V
IN
= 1.8 V
Bleed Resistance
V
EN
= 0 V; V
CC
= 3 V
V
EN
= 0 V; V
CC
= 5.5 V
Bleed Pin Leakage Current
V
EN
= V
CC
= 3 V, V
IN
= 1.8 V
V
EN
= V
CC
= 3 V, V
IN
= 12 V
EN Input High Voltage
EN Input Low Voltage
EN Input Leakage Current
V
CC
= 3 V − 5.5 V
V
CC
= 3 V − 5.5 V
NCP45520−H; NCP45521−H; V
EN
= 0 V
NCP45520−L; NCP45521−L; V
EN
= 5.5 V
EN Pull Down Resistance
EN Pull Up Resistance
PG Output Low Voltage (Note 11)
PG Output Leakage Current (Note 12)
Slew Rate Control Constant (Note 13)
FAULT PROTECTIONS
Thermal Shutdown Threshold (Note 14)
Thermal Shutdown Hysteresis (Note 14)
V
IN
Undervoltage Lockout Threshold
V
IN
Undervoltage Lockout Hysteresis
Short−Circuit Protection Threshold
V
CC
= 3 V − 5.5 V
V
CC
= 3 V − 5.5 V
V
CC
= 3 V
V
CC
= 3 V
V
CC
= 3 V; V
IN
= 0.5 V
V
CC
= 3 V; V
IN
= 13.5 V
T
SDT
T
HYS
V
UVLO
V
HYS
V
SC
0.25
20
200
100
145
20
0.35
50
265
285
0.45
70
350
500
°C
°C
V
mV
mV
NCP45520−H; NCP45521−H
NCP45520−L; NCP45521−L
NCP45520; V
CC
= 3 V; I
SINK
= 5 mA
NCP45520; V
CC
= 3 V; V
TERM
= 3.3 V
NCP45521; V
CC
= 3 V
V
IH
V
IL
I
IL
I
IH
R
PD
R
PU
V
OL
I
OH
K
SR
24
5
31
76
76
90
90
100
100
2
0.8
500
500
124
124
0.2
100
38
kW
kW
V
nA
mA
I
BLEED
R
BLEED
86
72
I
DYN
I
STBY
0.65
3.2
280
530
115
97
6
60
2
4.5
400
750
144
121
10
70
V
V
nA
mA
W
mA
mA
V
EN
= 0 V; V
IN
= 13.5 V
I
LEAK
R
ON
9.5
10.1
12.8
0.1
12.7
13.9
22.5
1
mA
mW
Conditions
(Note 7)
Symbol
Min
Typ
Max
Unit
7. V
EN
shown only for NCP45520−H, NCP45521−H (EN Active−High) unless otherwise specified.
8. Average current from V
IN
to V
OUT
with MOSFET turned off.
9. Average current from V
CC
to GND with MOSFET turned off.
10. Average current from V
CC
to GND after charge up time of MOSFET.
11. PG is an open-drain output that is pulled low when the MOSFET is disabled.
12. PG is an open-drain output that is not driven when the gate of the MOSFET is fully charged, requires an external pull up resistor
1 kW to
an external voltage source, V
TERM
.
13. See Applications Information section for details on how to adjust the slew rate.
14. Operation above T
J
= 125°C is not guaranteed.
http://onsemi.com
3
NCP45520, NCP45521
Table 5. SWITCHING CHARACTERISTICS
(T
J
= 25°C unless otherwise specified) (Notes 15 and 16)
Parameter
Conditions
V
CC
= 3.3 V; V
IN
= 1.8 V
Output Slew Rate (Note 17)
V
CC
= 5.0 V; V
IN
= 1.8 V
V
CC
= 3.3 V; V
IN
= 12 V
V
CC
= 5.0 V; V
IN
= 12 V
V
CC
= 3.3 V; V
IN
= 1.8 V
Output Turn−on Delay (Note 17)
V
CC
= 5.0 V; V
IN
= 1.8 V
V
CC
= 3.3 V; V
IN
= 12 V
V
CC
= 5.0 V; V
IN
= 12 V
V
CC
= 3.3 V; V
IN
= 1.8 V
Output Turn−off Delay (Note 17)
V
CC
= 5.0 V; V
IN
= 1.8 V
V
CC
= 3.3 V; V
IN
= 12 V
V
CC
= 5.0 V; V
IN
= 12 V
V
CC
= 3.3 V; V
IN
= 1.8 V
Power Good Turn−on Time (Note 18)
V
CC
= 5.0 V; V
IN
= 1.8 V
V
CC
= 3.3 V; V
IN
= 12 V
V
CC
= 5.0 V; V
IN
= 12 V
V
CC
= 3.3 V; V
IN
= 1.8 V
Power Good Turn−off Time (Note 18)
V
CC
= 5.0 V; V
IN
= 1.8 V
V
CC
= 3.3 V; V
IN
= 12 V
V
CC
= 5.0 V; V
IN
= 12 V
15. See below figure for Test Circuit and Timing Diagram.
16. Tested with the following conditions: V
TERM
= V
CC
; R
PG
= 100 kW; R
L
= 10
W;
C
L
= 0.1
mF.
17. Applies to NCP45520 and NCP45521.
18. Applies only to NCP45520.
V
TERM
R
PG
OFF ON
EN
V
IN
V
CC
GND
NCP4552x−H
PG
V
OUT
BLEED
SR
R
L
C
L
T
PG,OFF
T
PG,ON
T
OFF
T
ON
SR
Symbol
Min
Typ
11.9
12.1
13.5
13.9
220
185
270
260
1.2
0.9
0.4
0.2
0.91
0.93
1.33
1.21
21
15
21
15
ns
ms
ms
ms
kV/s
Max
Unit
V
EN
50%
T
ON
Dt
90%
DV
D
t
50%
T
OFF
90%
DV
V
OUT
10%
T
PG,ON
SR =
T
PG,OFF
50%
50%
V
PG
Figure 2. Switching Characteristics Test Circuit and Timing Diagram
http://onsemi.com
4
NCP45520, NCP45521
TYPICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
16.5
R
ON
, ON−RESISTANCE (mW)
R
ON
, ON−RESISTANCE (mW)
15.5
14.5
13.5
12.5
11.5
V
CC
= 3 V
10.5
9.5
8.5
0.5
2.5
4.5
6.5
8.5
10.5
12.5
V
IN
, INPUT VOLTAGE (V)
V
CC
= 5.5 V
20
V
IN
= 12 V
18
16
14
12
10
8
6
−45 −30 −15
0
15
30
45
60
75
90 105 120
V
IN
= 5.0 V
V
CC
= 3.3 V
V
IN
= 1.8 V
T
J
, JUNCTION TEMPERATURE (°C)
Figure 3. On−Resistance vs. Input Voltage
I
STBY
, SUPPLY STANDBY CURRENT (mA)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
3.0
3.5
4.0
4.5
5.0
5.5
V
CC
, SUPPLY VOLTAGE (V)
I
STBY
, SUPPLY STANDBY CURRENT (mA)
7
6
5
4
3
2
1
Figure 4. On−Resistance vs. Temperature
V
CC
= 5.5 V
V
CC
= 3 V
0
15
30
45
60
75
90 105 120
0
−45 −30 −15
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Supply Standby Current vs. Supply
Voltage
I
DYN
, SUPPLY DYNAMIC CURRENT (mA)
550
500
450
400
350
300
250
200
150
0.5
2.5
4.5
6.5
8.5
10.5
12.5
V
IN
, INPUT VOLTAGE (V)
V
CC
= 3 V
V
CC
= 5.5 V
I
DYN
, SUPPLY DYNAMIC CURRENT (mA)
600
550
500
450
400
350
300
250
200
150
3.0
Figure 6. Supply Standby Current vs.
Temperature
V
IN
= 1.8 V
V
IN
= 12 V
3.5
4.0
4.5
5.0
5.5
V
CC
, SUPPLY VOLTAGE (V)
Figure 7. Supply Dynamic Current vs. Input
Voltage
Figure 8. Supply Dynamic Current vs. Supply
Voltage
http://onsemi.com
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参数对比
与NCP45520IMNTWG-L相近的元器件有:NCP45520IMNTWG-H。描述及对比如下:
型号 NCP45520IMNTWG-L NCP45520IMNTWG-H
描述 Power Switch ICs - Power Distribution NCP45520IMNTWG-L Power Switch ICs - Power Distribution NCP45520IMNTWG-H
Brand Name ON Semiconductor ON Semiconductor
是否无铅 不含铅 不含铅
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美)
包装说明 DFN-8 DFN-8
针数 8 8
制造商包装代码 506CC 506CC
Reach Compliance Code compliant compliant
Factory Lead Time 21 weeks 20 weeks
内置保护 TRANSIENT; OVER CURRENT; THERMAL; UNDER VOLTAGE TRANSIENT; OVER CURRENT; THERMAL; UNDER VOLTAGE
接口集成电路类型 BUFFER OR INVERTER BASED PERIPHERAL DRIVER BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码 S-PDSO-N8 S-PDSO-N8
JESD-609代码 e3 e3
长度 2 mm 2 mm
湿度敏感等级 3 3
功能数量 1 1
端子数量 8 8
最高工作温度 85 °C 85 °C
最低工作温度 -40 °C -40 °C
输出电流流向 SINK SINK
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 HVSON HVSON
封装形状 SQUARE SQUARE
封装形式 SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
座面最大高度 1 mm 1 mm
最大供电电压 5.5 V 5.5 V
最小供电电压 3 V 3 V
标称供电电压 3.3 V 3.3 V
电源电压1-最大 13.5 V 13.5 V
电源电压1-分钟 0.5 V 0.5 V
电源电压1-Nom 1.8 V 1.8 V
表面贴装 YES YES
温度等级 INDUSTRIAL INDUSTRIAL
端子面层 Tin (Sn) Tin (Sn)
端子形式 NO LEAD NO LEAD
端子节距 0.5 mm 0.5 mm
端子位置 DUAL DUAL
宽度 2 mm 2 mm
Base Number Matches 1 1
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E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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