NCS2211, NCV2211
Low Distortion Audio Power
Amplifier with Differential
Output and Shutdown Mode
Product Description
The NCS2211 is a high performance, low distortion Class A/B
audio amplifier. It is capable of delivering 1 W of output power into an
8
W
speaker bridge−tied load (BTL). The NCS2211 will operate over a
wide temperature range, and it is specified for single−supply voltage
operation for portable applications.
It features low distortion performance, 0.2% typical THD + N @
1 W and incorporates a shutdown/enable feature to extend battery life.
The shutdown/enable feature will reduce the quiescent current to 1
mA
maximum.
The NCS2211 is designed to operate over the −40°C to +85°C
temperature range, and is available in an 8−lead SOIC package and a
3 X 3 mm DFN8 package. The SOIC package is pin compatible with
equivalent function and comparable performance to competitive
devices as is the DFN8 package. The DFN8 has a low thermal
resistance of only 70°C/W plus has an exposed metal pad to facilitate
heat conduction to copper PCB material.
Low distortion, high power, low quiescent current, and small
packaging makes the NCS2211 suitable for applications including
notebook and desktop computers, PDA’s, and speaker phones.
Features
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MARKING
DIAGRAMS
8
8
1
SOIC−8
D SUFFIX
CASE 751
1
1
1
DFN8
MN SUFFIX
CASE 506BJ
N2211
ALYWG
G
N2211
ALYWG
G
8
N2211 = Specific Device Code
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
•
•
•
•
•
•
•
•
•
•
•
Differential Output
1.0 W into an 8
W
Speaker
1.5 W into a 4
W
Speaker
Single Supply Operation: 2.7 V to 5.5 V
THD+N: 0.2% @ 1 W Output
Low Quiescent Current: 20 mA Max
Shutdown Current < 1.0
mA
Excellent Power Supply Rejection
Two Package Options: SOIC−8 Package and DFN8
Pin Compatible with Competitive Devices
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
PIN ASSIGNMENT
PIN
1
2
NAME
Enable
Bias
DESCRIPTION
Enable (LOW)/Shutdown (HIGH)
Bias Output at (V
CC
−V
EE
)/2;
Bypass with Capacitor to
Reduce Noise
Non−Inverting Input
Inverting Input
Output+
Positive Supply (Bypass with
10
mF
in parallel with 0.1
mF)
Negative Supply (Connect to GND
for Single−Supply Operation)
Output−
3
4
5
6
7
8
IN+
IN−
OUT+
V
CC
V
EE
OUT−
•
•
•
•
•
Desktop Computers
Notebook Computers
PDA’s
Speaker Phones
Games
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
May, 2014 − Rev. 3
Publication Order Number:
NCS2211/D
NCS2211, NCV2211
PIN CONNECTIONS for SOIC−8 and DFN8
Enable
Bias
IN+
IN−
1
2
3
4
(Top View)
8 OUT−
7 V
EE
6 V
CC
5 OUT+
V
CC
6
R
C1
(−) Input
R1
R2
−
+
R
4
3
5
Output (+)
R
L
(+) Input
Bias
Filtering
−
+
R
C2
R
8
Output (−)
2
7
V
EE
1
Enable
Figure 1. Block Diagram
High
Enable (Note 1)
Shutdown
Low
Enabled
1. Enable (pin 1) must be actively driven for proper operation and cannot be left floating. See EN-
ABLE/SHUTDOWN CONTROL in the specification table for proper logic threshold levels.
MAXIMUM RATINGS
Parameter
Power Supply Voltages
Output Current
Maximum Junction Temperature (Note 2)
Operating Ambient Temperature
Storage Temperature Range
Power Dissipation
Thermal Resistance, Junction−to−Air − SOIC−8
Thermal Resistance, Junction−to−Air
− DFN8 (Note 4)
Moisture Sensitivity (Note 3)
Symbol
V
CC
I
O
T
J
T
A
T
stg
P
D
q
JA
Rating
5.5
500
150
−40 to +85
−60 to +150
(See Graph)
117
70
Level 1
Unit
Vdc
mA
°C
°C
°C
mW
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Power dissipation must be considered to ensure maximum junction temperature (T
J
) is not exceeded.
3. For additional information, see Application Note AND8003/D
4. As mounted on an 80x80x1.5 mm FR4 PCB with 650 mm
2
and 2 oz (0.034 mm) thick copper heat spreader. Following JEDEC JESD/EIA
51.1, 51.2, 51.3 test guidelines.
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NCS2211, NCV2211
DC ELECTRICAL CHARACTERISTICS
(V
CC
=
+5
V, A
VD
= 2, R
L
= 8
W,
C2 = 0.1
mF,
T
A
= 25°C, unless otherwise specified)
Symbol
Characteristics
Conditions
Min
Typ
Max
Unit
POWER SUPPLY
V
CC
I
S, ON
I
S, OFF
PSRR
Operating Voltage
Range
Power Supply Current
− Enabled
Power Supply Current
− Shutdown
Power Supply
Rejection Ratio
V
CC
= 2.7 V to 5.5 V
T
A
= −40°C to +85°C (Note 5)
V
CC
= 2.7 V to 5.5 V
V
CC
= 2.7 V to 5.5 V
T
A
= −40°C to +85°C
2.7
5.5
20
1.0
V
mA
mA
dB
75
ENABLE/SHUTDOWN CONTROL
V
IH
V
IL
Enable Input High
Enable Input Low
Device Shutdown
V
CC
= 2.7 V to 5.5 V
Device Enabled
V
CC
= 2.7 V to 5.5 V
90% X V
CC
GND
V
CC
10% x V
CC
V
V
OUTPUT CHARACTERISTICS
V
OH
V
OL
V
out
−off
I
O
Output High Voltage
Output Low Voltage
Differential Output
Offset Voltage
Output Current
From Either Output to GND
R
L
= 8
W
From Either Output to GND
R
L
= 8
W
V
CC
= 2.7 V to 5.5 V (Note 5)
T
A
= −40°C to +85°C
Output to Output
350
V
CC
− 0.400
0.400
$50
V
V
mV
mA
AC ELECTRICAL CHARACTERISTICS
(V
CC
=
+5
V, A
VD
= 2, R
L
= 8
W,
C2 = 0.1
mF,
T
A
= 25°C, unless otherwise specified)
Symbol
Characteristics
Conditions
Min
Typ
Max
Unit
FREQUENCY DOMAIN PERFORMANCE
GBW
Gain Bandwidth Product
Phase Margin
THD+N
Total Harmonic Distortion
A
VD
= +2, R
L
= 8
W,
V
CC
= 5 V
V
CC
= 5 V, f = 1 kHz, P = 1.0 W into 8
W
V
CC
= 5 V, f = 1 kHz, P = 0.5 W into 8
W
V
CC
= 3.3 V, f = 1 kHz, P = 0.35 W into 8
W
V
CC
= 2.7 V, f = 1 kHz, P = 0.25 W into 8
W
12
80
0.2
0.15
0.1
0.1
MHz
°
%
TIME DOMAIN RESPONSE
t
ON
t
OFF
Turn on delay
Turn off delay
V
CC
= 5 V
V
CC
= 5 V
1
4
ms
ms
5. Guaranteed by design and/or characterization.
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NCS2211, NCV2211
TYPICAL PERFORMANCE CHARACTERISTICS
1
1
T
A
= 25°C
V
CC
= 5.0 V
A
VD
= 2 (BTL)
R
L
= 8
W
THD + N (%)
C2 = 0.1
mF
C2 = 1.0
mF
T
A
= 25°C
V
CC
= 5.0 V
A
VD
= 2 (BTL)
R
L
= 8
W
C2 = 0.1
mF
THD + N (%)
0.1
C2 = 1.0
mF
0.1
0.01
20
100
1k
FREQUENCY (Hz)
10 k
0.01
20
100
1k
FREQUENCY (Hz)
10 k
Figure 2. THD + N vs. Frequency
(P
L
= 500 mW)
10
T
A
= 25°C
V
CC
= 5.0 V
A
VD
= 10 (BTL)
R
L
= 8
W
THD + N (%)
C2 = 0.1
mF
THD + N (%)
10
Figure 3. THD + N vs. Frequency
(P
L
= 1 W)
T
A
= 25°C
V
CC
= 5.0 V
A
VD
= 10 (BTL)
R
L
= 8
W
C2 = 0.1
mF
1
1
C2 = 1.0
mF
0.1
20
100
1k
FREQUENCY (Hz)
10 k
0.1
C2 = 1.0
mF
20
100
1k
FREQUENCY (Hz)
10 k
Figure 4. THD + N vs. Frequency
(P
L
= 500 mW)
10
T
A
= 25°C
V
CC
= 5.0 V
A
VD
= 20 (BTL)
R
L
= 8
W
THD + N (%)
C2 = 0.1
mF
1
THD + N (%)
10
Figure 5. THD + N vs. Frequency
(P
L
= 1 W)
T
A
= 25°C
V
CC
= 5.0 V
A
VD
= 20 (BTL)
R
L
= 8
W
C2 = 0.1
mF
1
C2 = 1.0
mF
C2 = 1.0
mF
0.1
0.1
20
100
1k
FREQUENCY (Hz)
10 k
20
100
1k
FREQUENCY (Hz)
10 k
Figure 6. THD + N vs. Frequency
(P
L
= 500 mW)
Figure 7. THD + N vs. Frequency
(P
L
= 1 W)
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NCS2211, NCV2211
TYPICAL PERFORMANCE CHARACTERISTICS
1
1
T
A
= 25°C
V
CC
= 2.7 V
A
VD
= 2 (BTL)
R
L
= 8
W
THD + N (%)
C2 = 0.1
mF
0.1
T
A
= 25°C
V
CC
= 3.3 V
A
VD
= 2 (BTL)
R
L
= 8
W
C2 = 0.1
mF
THD + N (%)
0.1
C2 = 1.0
mF
0.01
20
100
1k
FREQUENCY (Hz)
10 k
0.01
C2 = 1.0
mF
20
100
1k
FREQUENCY (Hz)
10 k
Figure 8. THD + N vs. Frequency
(P
L
= 350 mW)
10
T
A
= 25°C
V
CC
= 3.3 V
A
VD
= 10 (BTL)
R
L
= 8
W
THD + N (%)
1
10
Figure 9. THD + N vs. Frequency
(P
L
= 250 mW)
T
A
= 25°C
V
CC
= 2.7 V
A
VD
= 10 (BTL)
R
L
= 8
W
C2 = 0.1
mF
THD + N (%)
1
C2 = 0.1
mF
0.1
C2 = 1.0
mF
0.1
C2 = 1.0
mF
0.01
20
100
1k
FREQUENCY (Hz)
10 k
0.01
20
100
1k
FREQUENCY (Hz)
10 k
Figure 10. THD + N vs. Frequency
(P
L
= 350 mW)
10
C2 = 0.1
mF
THD + N (%)
1
T
A
= 25°C
V
CC
= 3.3 V
A
VD
= 20 (BTL)
R
L
= 8
W
THD + N (%)
1
10
Figure 11. THD + N vs. Frequency
(P
L
= 250 mW)
T
A
= 25°C
V
CC
= 2.7 V
A
VD
= 20 (BTL)
R
L
= 8
W
C2 = 0.1
mF
0.1
C2 = 1.0
mF
0.1 C2 = 1.0
mF
0.1
20
100
1k
FREQUENCY (Hz)
10 k
0.01
20
100
1k
FREQUENCY (Hz)
10 k
Figure 12. THD + N vs. Frequency
(P
L
= 350 mW)
Figure 13. THD + N vs. Frequency
(P
L
= 250 mW)
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