NCV8133
500 mA, Very Low Dropout
Bias Rail CMOS Voltage
Regulator
The NCV8133 is a 500 mA VLDO equipped with NMOS pass
transistor and a separate bias supply voltage (V
BIAS
). The device
provides very stable, accurate output voltage with low noise suitable
for space constrained, noise sensitive applications. In order to
optimize performance for battery operated portable applications, the
NCV8133 features low I
Q
consumption. The XDFN6 1.2 mm x
1.2 mm package is optimized for use in space constrained
applications.
Features
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MARKING
DIAGRAM
XDFN6
CASE 711AT
XX M
T
•
•
•
•
•
•
•
•
•
•
•
•
Input Voltage Range: 0.8 V to 5.5 V
Bias Voltage Range: 2.4 V to 5.5 V
Fixed Output Voltage Device
Output Voltage Range: 0.8 V to 2.1 V
±1.5%
Accuracy over Temperature, 0.5% V
OUT
@ 25°C
Ultra−Low Dropout: Typ. 140 mV at 500 mA
Very Low Bias Input Current of Typ. 80
mA
Very Low Bias Input Current in Disable Mode: Typ. 0.5
mA
Logic Level Enable Input for ON/OFF Control
Output Active Discharge Option Available
Stable with a 2.2
mF
Ceramic Capacitor
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable; Device Temperature Grade 1: −40°C to
+125°C Ambient Operating Temperature Range
•
These are Pb−Free Devices
Typical Applications
XX = Specific Device Code
M = Date Code
PIN CONNECTIONS
OUT
1
6
IN
NC
2
GND
5
GND
EN
3
(Top VIew)
4
BIAS
ORDERING INFORMATION
See detailed ordering and shipping information on page 10 of
this data sheet.
•
Automotive, Consumer and Industrial Equipment Point of Load
•
•
•
•
Regulation
Battery−powered Equipment
FPGA, DSP and Logic Power Supplies
Switching Power Supply Post Regulation
Cameras, DVRs, STB and Camcorders
V
BIAS
>2.7 V
NCV8133
100 nF
BIAS
V
IN
1.5 V
1
mF
IN
EN
GND
OUT
2.2
mF
V
OUT
1 V up to 500 mA
V
EN
Figure 1. Typical Application Schematics
©
Semiconductor Components Industries, LLC, 2017
1
July, 2017 − Rev. 1
Publication Order Number:
NCV8133/D
NCV8133
IN
EN
ENABLE
BLOCK
UVLO
CURRENT
LIMIT
OUT
BIAS
150
W
VOLTAGE
REFERENCE
+
−
THERMAL
LIMIT
*Active
DISCHARGE
GND
*Active output discharge function is present only in NCV8133AMXyyyTCG devices.
yyy denotes the particular output voltage option.
Figure 2. Simplified Schematic Block Diagram
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2
NCV8133
PIN FUNCTION DESCRIPTION
Pin No.
XDFN6
1
2
3
4
5
6
Pad
Pin Name
OUT
N/C
EN
BIAS
GND
IN
Regulated Output Voltage pin
Not internally connected (Note 1)
Enable pin. Driving this pin high enables the regulator. Driving this pin low puts the regulator into
shutdown mode.
Bias voltage supply for internal control circuits. This pin is monitored by internal Under-Voltage
Lockout Circuit.
Ground
Input Voltage Supply pin
Should be soldered to the ground plane for increased thermal performance.
Description
1. True no connect. Printed circuit board traces are allowable
ABSOLUTE MAXIMUM RATINGS
Rating
Input Voltage (Note 2)
Output Voltage
Chip Enable, Bias and Adj Input
Output Short Circuit Duration
Maximum Junction Temperature
Storage Temperature
ESD Capability, Human Body Model (Note 3)
ESD Capability, Machine Model (Note 3)
Symbol
V
IN
V
OUT
V
EN,
V
BIAS
t
SC
T
J
T
STG
ESD
HBM
ESD
MM
Value
−0.3 to 6
−0.3 to (V
IN
+0.3)
≤
6
−0.3 to 6
unlimited
150
−55 to 150
2000
200
Unit
V
V
V
s
°C
°C
V
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
3. This device series incorporates ESD protection (except OUT pin) and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002
ESD Machine Model tested per AEC−Q100−003
Latchup Current Maximum Rating
≤
150 mA per AEC−Q100−004.
RECOMMENDED OPERATING CONDITIONS
Rating
Input Voltage
Bias Voltage
Junction Temperature
Symbol
V
IN
V
BIAS
T
J
Min
(V
OUT
+ V
DO_IN
)
(V
OUT
+ 1.4)
≥
2.4
−40
Max
5.5
5.5
+125
Unit
V
V
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
THERMAL CHARACTERISTICS
Rating
Thermal Characteristics, XDFN6 1.2 mm x 1.2 mm
Thermal Resistance, Junction−to−Air
Symbol
R
qJA
Value
170
Unit
°C/W
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3
NCV8133
ELECTRICAL CHARACTERISTICS
−40°C
≤
T
J
≤
125°C; V
BIAS
= 2.7 V or (V
OUT
+ 1.6 V), whichever is greater, V
IN
= V
OUT(NOM)
+
0.3 V, I
OUT
= 1 mA, V
EN
= 1 V, unless otherwise noted. C
IN
= 1
mF,
C
OUT
= 2.2
mF.
Typical values are at T
J
= +25°C. Min/Max values are
for −40°C
≤
T
J
≤
125°C unless otherwise noted. (Note 4)
Parameter
Operating Input Voltage
Range
Operating Bias Voltage
Range
Undervoltage Lock−out
Output Voltage Accuracy
Output Voltage Accuracy
−40°C
≤
T
J
≤
125°C, V
OUT(NOM)
+ 0.3 V
≤
V
IN
≤
V
OUT(NOM)
+ 1.0 V, 2.7 V or (V
OUT(NOM)
+
1.6 V), whichever is greater < V
BIAS
< 5.5 V,
1 mA < I
OUT
< 500 mA
V
OUT(NOM)
+ 0.3 V
≤
V
IN
≤
5.0 V
2.7 V or (V
OUT(NOM)
+ 1.6 V), whichever is
greater < V
BIAS
< 5.5 V
I
OUT
= 1 mA to 500 mA
I
OUT
= 150 mA (Note 5)
I
OUT
= 500 mA (Note 5)
V
BIAS
Dropout Voltage
Output Current Limit
Bias Pin Operating Current
Bias Pin Disable Current
Vinput Pin Disable Current
EN Pin Threshold Voltage
I
OUT
= 500 mA, V
IN
= V
BIAS
(Notes 5, 6)
V
OUT
= 90% V
OUT(NOM)
V
BIAS
= 2.7 V
V
EN
≤
0.4 V
V
EN
≤
0.4 V
EN Input Voltage “H”
EN Input Voltage “L”
EN Pull Down Current
Turn−On Time
Power Supply Rejection
Ratio
V
EN
= 5.5 V
From assertion of V
EN
to V
OUT
=
98% V
OUT(NOM)
. V
OUT(NOM)
= 1.0 V
V
IN
to V
OUT
, f = 1 kHz, I
OUT
= 150 mA,
V
IN
≥
V
OUT
+0.5 V
V
BIAS
to V
OUT
, f = 1 kHz, I
OUT
= 150 mA,
V
IN
≥
V
OUT
+0.5 V
Output Noise Voltage
Thermal Shutdown
Threshold
Output Discharge
Pull−Down
V
IN
= V
OUT
+0.5 V, V
OUT(NOM)
= 1.0 V,
f = 10 Hz to 100 kHz
Temperature increasing
Temperature decreasing
V
EN
≤
0.4 V, V
OUT
= 0.5 V, NCV8133A options
only
R
DISCH
V
BIAS
Rising
Hysteresis
Test Conditions
Symbol
V
IN
V
BIAS
UVLO
V
OUT
V
OUT
−1.5
Min
V
OUT
+
V
DO
(V
OUT
+
1.40)
≥
2.4
1.6
0.2
±0.5
+1.5
Typ
Max
5.5
5.5
Unit
V
V
V
%
%
V
IN
Line Regulation
V
BIAS
Line Regulation
Load Regulation
V
IN
Dropout Voltage
Line
Reg
Line
Reg
Load
Reg
V
DO
V
DO
V
DO
I
CL
I
BIAS
I
BIAS(DIS)
I
VIN(DIS)
V
EN(H)
V
EN(L)
I
EN
t
ON
PSRR(V
IN
)
PSRR(V
BIAS
)
V
N
0.9
550
0.01
0.01
1.5
37
140
1.1
800
80
0.5
0.5
90
300
1.5
1100
110
1.5
1.5
%/V
%/V
mV
mV
V
mA
mA
mA
mA
V
0.4
0.3
150
70
80
40
160
140
150
W
1.5
mA
ms
dB
dB
mV
RMS
°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at T
A
= 25°C.
Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.
5. Dropout voltage is characterized when V
OUT
falls 3% below V
OUT(NOM)
.
6. For output voltages below 0.9 V, V
BIAS
dropout voltage does not apply due to a minimum Bias operating voltage of 2.4 V.
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NCV8133
TYPICAL CHARACTERISTICS
At T
J
= +25°C, V
IN
= V
OUT(TYP)
+ 0.3 V, V
BIAS
= 2.7 V, V
EN
= V
BIAS
, V
OUT(NOM)
= 1.0 V, I
OUT
= 500 mA,
C
IN
= 1
mF,
C
BIAS
= 0.1
mF,
and C
OUT
= 2.2
mF
(effective capacitance), unless otherwise noted.
200
180
160
140
120
100
80
60
40
20
0
0
100
200
300
400
500
I
OUT
, OUTPUT CURRENT (mA)
+25°C
−40°C
+85°C
+125°C
V
DO
(V
IN
− V
OUT
) DROPOUT VOLTAGE (mV)
200
180
160
140
120
100
80
60
40
20
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
BIAS
− V
OUT
(V)
+125°C
+85°C
+25°C −40°C
I
OUT
= 100 mA
V
DO
(V
IN
− V
OUT
) DROPOUT VOLTAGE (mV)
Figure 3. V
IN
Dropout Voltage vs. I
OUT
and
Temperature T
J
V
DO
(V
IN
− V
OUT
) DROPOUT VOLTAGE (mV)
300
I
OUT
= 300 mA
250
200
150
100
50
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
BIAS
− V
OUT
(V)
+125°C
+85°C
+25°C
−40°C
V
DO
(V
IN
− V
OUT
) DROPOUT VOLTAGE (mV)
500
450
400
350
300
250
200
150
100
50
0
0.5
Figure 4. V
IN
Dropout Voltage vs. (V
BIAS
−
V
OUT
) and Temperature T
J
I
OUT
= 500 mA
+125°C
+85°C
+25°C
−40°C
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
BIAS
− V
OUT
(V)
Figure 5. V
IN
Dropout Voltage vs. (V
BIAS
−
V
OUT
) and Temperature T
J
V
DO
(V
BIAS
− V
OUT
) DROPOUT VOLTAGE (mV)
1500
1400
1300
1200
+25°C
1100
+85°C
1000
900
0
50
100
150
200
250
300
I
OUT
, OUTPUT CURRENT (mA)
40
20
0
0
−40°C
I
BIAS
(mA)
+125°C
140
120
Figure 6. V
IN
Dropout Voltage vs. (V
BIAS
−
V
OUT
) and Temperature T
J
+85°C
100
80
60
−40°C
+125°C
+25°C
50
100 150 200
250 300 350 400 450 500
I
OUT
, OUTPUT CURRENT (mA)
Figure 7. V
BIAS
Dropout Voltage vs. I
OUT
and
Temperature T
J
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5
Figure 8. BIAS Pin Current vs. I
OUT
and
Temperature T
J
