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NE521N

DUAL COMPARATOR, 10000 uV OFFSET-MAX, 12 ns RESPONSE TIME, PDIP14

器件类别:模拟混合信号IC    放大器电路   

厂商名称:Philips Semiconductors (NXP Semiconductors N.V.)

厂商官网:https://www.nxp.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Philips Semiconductors (NXP Semiconductors N.V.)
包装说明
DIP, DIP14,.3
Reach Compliance Code
unknow
放大器类型
COMPARATOR
25C 时的最大偏置电流 (IIB)
20 µA
最大输入失调电压
10000 µV
JESD-30 代码
R-PDIP-T14
JESD-609代码
e0
标称负供电电压 (Vsup)
-5 V
功能数量
2
端子数量
14
最高工作温度
70 °C
最低工作温度
封装主体材料
PLASTIC/EPOXY
封装代码
DIP
封装等效代码
DIP14,.3
封装形状
RECTANGULAR
封装形式
IN-LINE
电源
+-5 V
认证状态
Not Qualified
最大压摆率
35 mA
标称供电电压 (Vsup)
5 V
表面贴装
NO
技术
BIPOLAR
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
文档预览
INTEGRATED CIRCUITS
NE521
High-speed dual-differential
comparator/sense amp
Product data
Supersedes data of 1994 Aug 31
File under Integrated Circuits, IC11 Handbook
2001 Aug 03
Philips
Semiconductors
Philips Semiconductors
Product data
High-speed dual-differential comparator/sense amp
NE521
FEATURES
12 ns maximum guaranteed propagation delay
20
µA
maximum input bias current
TTL compatible strobes and outputs
Large common-mode input voltage range
Operates from standard supply voltages
APPLICATIONS
PIN CONFIGURATION
D, N Packages
INPUT 1A
INPUT 1B
NC
OUTPUT 1Y
STROBE 1G
STROBE S
GND
1
2
3
4
5
6
7
TOP VIEW
14
13
12
11
10
9
8
V+
V–
INPUT 2A
INPUT 2B
NC
OUTPUT 2Y
STROBE 2G
MOS memory sense amp
A-to-D conversion
High-speed line receiver
SL00242
Figure 1. Pin Configuration
ORDERING INFORMATION
DESCRIPTION
14-Pin Plastic Dual In-Line Package (DIP)
14-Pin SO Package
TEMPERATURE RANGE
0
°C
to +70
°C
0
°C
to +70
°C
ORDER CODE
NE521N
NE521D
DWG #
SOT27-1
SOT108-1
EQUIVALENT SCHEMATIC
V+
14
R2
R1
R17
R20
R21
R25
Q4
Q2
+
Q10
Q1
Q3
R16
D7
D6
Q6
Q5
Q7
5
Q25
Q26
Q30
Q29
R24
6
Q28
4
2
1
Q9
Q8
Q13
Q11
R14
D2
R22
R23
Q27
7
R4
13
V–
R8
Q16
12
11
+
Q18
R10
R5
R3
R15
R6
R7
Q19
R9
D3
Q36
R28
R29
Q35
Q17
Q15
Q14
D4
D5
Q22
Q23
Q24
8
R30
Q32
Q31
Q32
Q34
9
Q20
R18
Q21
R12
V+
R11
R19
R26
R27
R34
SL00243
Figure 2. Equivalent Schematic
2001 Aug 03
2
853-0900 26834
Philips Semiconductors
Product data
High-speed dual-differential comparator/sense amp
NE521
BLOCK DIAGRAM
(1)
INPUT 1A
(2)
INPUT 1B
(12)
INPUT 2A
(11)
INPUT 2B
LOGIC FUNCTIONS
V
ID
+
, B
A
V
ID
–V
OS
–V
OS
< V
ID
< V
OS
V
ID
V
OS
X
(9)
OUTPUT 3Y
(8)
STROBE 2G
STROBE S
H
H
H
L
X
STROBE G
H
H
H
X
L
OUTPUT (Y)
L
Undefined
H
H
H
OUTPUT 1Y
STROBE 1G
(4)
(5)
(6)
STROBE S
X
SL00244
Figure 3. Block Diagram
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V+
V–
V
IDR
V
IN
Supply voltage
Positive
Negative
Differential input voltage
Input voltage
Common mode
Strobe/gate
Maximum power dissipation
1
T
amb
= 25
°C
(still-air)
N package
D package
Operating temperature range
Storage temperature range
Lead soldering temperature (10 sec. max)
PARAMETER
RATING
+7
-7
±6
±5
+5.25
UNIT
V
V
V
V
V
P
D
1420
1040
0 to 70
–65 to +150
+230
mW
mW
°C
°C
°C
T
amb
T
stg
T
sld
NOTES:
1. Derate above 25
°C
at the following rates:
N package at 11.4 mW/°C
D package at 8.3 mW/°C
2001 Aug 03
3
Philips Semiconductors
Product data
High-speed dual-differential comparator/sense amp
NE521
DC ELECTRICAL CHARACTERISTICS
V+ = +5 V; V– = –5 V, T
amb
= 0
°C
to +70
°C,
unless otherwise specified.
LIMITS
SYMBOL
V
OS
PARAMETER
Input offset voltage
At 25
°C
Over temperature range
Input bias current
At 25
°C
Over temperature range
Input offset current
At 25
°C
Over temperature range
Common-mode voltage range
Input current
High
TEST CONDITIONS
V+ = +4.75 V; V– = –4.75 V
6
V+ = +5.25 V, V– = –5.25 V
7.5
V+ = +5.25 V, V– = –5.25 V
1.0
V+ = +4.75 V, V– = –4.75 V
V+ = +5.25 V, V– = –5.25 V
V
IH
= 2.7 V
1G or 2G strobe
Common strobe S
V
IL
= 0.5 V
1G or 2G strobe
Common strobe S
V
I(S)
= 2.0 V
V+ = +4.75 V; V– = –4.75 V; I
LOAD
= –1 mA
V+ = +5.25 V; V– = –5.25 V; I
LOAD
= 20 mA
2.7
3.4
0.5
4.75
–4.75
V+ = 5.25 V; V– = –5.25 V; T
amb
= 25
°C
27
–15
-40
35
–28
–100
mA
mA
5.0
–5.0
5.25
–5.25
–3
5
12
+3
µA
µA
V
20
40
µA
µA
7.5
10
mV
mV
Min
Typ
Max
UNIT
I
BIAS
I
OS
V
CM
I
IH
50
100
µA
µA
I
IL
Input Current
Low
–2.0
–4.0
mA
mA
V
V
V
V
V
OH
V
OL
V+
V–
Output voltage
High
Low
Supply voltage
Positive
Negative
Supply current
I
CC+
I
CC–
I
SC
Positive
Negative
Short-circuit output current
AC ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C;
R
L
= 280Ω ; C
L
=15 pF; V+ = 5 V; V– = 5 V
LIMITS
SYMBOL
PARAMETER
FROM INPUT
TO OUTPUT
Min
Typ
Max
UNIT
Large-signal switching speed
Propagation delay
t
PLH(D)
t
PHL(D)
t
PLH(S)
t
PHL(S)
f
MAX
Low to high
1
High to low
1
Low to high
2
High to low
2
Max. operating frequency
Amp
Amp
Strobe
Strobe
Output
Output
Output
Output
40
8
6
4.5
3.0
55
12
9
10
6
MHz
ns
NOTES:
1. Response time measured from 0 V point of
±100
mV
P-P
10 MHz square wave to the 1.5 V point of the output.
2. Response time measured from 1.5 V point of input to 1.5 V point of the output.
2001 Aug 03
4
Philips Semiconductors
Product data
High-speed dual-differential comparator/sense amp
NE521
TYPICAL PERFORMANCE CHARACTERISTICS
Response Time for Various
Input Overdrives
OUTPUT VOLTAGE (V)
4
3
100mV
2
1
0
INPUT VOLTAGE (mV)
INPUT VOLTAGE (mV)
20mV
5mV
10mV
V
S
= +5V
T
amb
= 25
o
C
OUTPUT VOLTAGE (V)
4
3
2
1
0
50mV
100mV
5mV
10mV
TESPONSE TIME (ns)
Response Time for Various
Input Overdrives
T
amb
= 25
o
C
V
S
= +5V
Response Time vs Temperature
12
10
TPD (LH)
8
6
4
2
TPD (HL)
100
50
0
0
5
10
15
20
25
30
100
50
0
0
5
10
15
20
25
30
60
20
–20
+60
+100
+140
TIME — nS
TIME — nS
AMBIENT TEMPERATURE (
o
C)
Propagation Delay for
Various Input Voltages
20
V
S
= +5V
10MHz SQUARE
WAVE INPUT
T
amb
= 25
o
C
TPD (LH)
10
18
PROPAGATION DELAY (ns)
16
14
12
10
Propagation Delay for
Various Input Voltages
4.0
V
S
= +5V
10MHz SQUARE
WAVE INPUT
T
amb
= 25
o
C
Output Voltage vs
Ambient Temperature
V
OH
OUTPUT VOLTAGE (V)
3.0
12
PROPAGATION DELAY (ns)
8
TPD (HL)
6
TPD (LH)
8
TPD (HL)
6
4
2
2.0
1.0
V
OL
10
20
30
40
50
60
70
100
1000
INPUT VOLTAGE (m Vp–p)
–75
–25
+25
+75
+125
o
INPUT VOLTAGE (mVp–p)
AMBIENT TEMPERATURE ( C)
Input Bias Current vs
Ambient Temperature
12
11
INPT BIAS CURRENT (
µ
A)
10
9
8
7
6
1.1
1.0
0.9
0.8
0.7
0.6
0.5
Input Offset Current vs
Ambient Temperature
INPUT OFSET CURRENT (
µ
A)
–75
–25
+25
+75
+125
–75
–25
+25
+75
+125
AMBIENT TEMPERATURE (
o
C)
AMBIENT TEMPERATURES (
o
C)
SL00245
Figure 4. Typical Performance Characteristics
2001 Aug 03
5
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参数对比
与NE521N相近的元器件有:NE521D、NE521。描述及对比如下:
型号 NE521N NE521D NE521
描述 DUAL COMPARATOR, 10000 uV OFFSET-MAX, 12 ns RESPONSE TIME, PDIP14 DUAL COMPARATOR, 10000 uV OFFSET-MAX, 12 ns RESPONSE TIME, PDIP14 DUAL COMPARATOR, 10000 uV OFFSET-MAX, 12 ns RESPONSE TIME, PDIP14
是否Rohs认证 不符合 不符合 -
厂商名称 Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) -
包装说明 DIP, DIP14,.3 SOP, SOP14,.25 -
Reach Compliance Code unknow unknown -
放大器类型 COMPARATOR COMPARATOR -
25C 时的最大偏置电流 (IIB) 20 µA 20 µA -
最大输入失调电压 10000 µV 10000 µV -
JESD-30 代码 R-PDIP-T14 R-PDSO-G14 -
JESD-609代码 e0 e0 -
标称负供电电压 (Vsup) -5 V -5 V -
功能数量 2 2 -
端子数量 14 14 -
最高工作温度 70 °C 70 °C -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY -
封装代码 DIP SOP -
封装等效代码 DIP14,.3 SOP14,.25 -
封装形状 RECTANGULAR RECTANGULAR -
封装形式 IN-LINE SMALL OUTLINE -
电源 +-5 V +-5 V -
认证状态 Not Qualified Not Qualified -
最大压摆率 35 mA 35 mA -
标称供电电压 (Vsup) 5 V 5 V -
表面贴装 NO YES -
技术 BIPOLAR BIPOLAR -
温度等级 COMMERCIAL COMMERCIAL -
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
端子形式 THROUGH-HOLE GULL WING -
端子节距 2.54 mm 1.27 mm -
端子位置 DUAL DUAL -
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