SURFACE MOUNT NPN SILICON
HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT:
f
T
of 15 GHz
• LOW VOLTAGE/LOW CURRENT OPERATION
• HIGH INSERTION POWER GAIN:
|S
21E
|
2
= 12 dB @ 2 V, 7 mA, 2 GHz
|S
21E
|
2
= 11 dB @ 1 V, 5 mA, 2 GHz
• LOW NOISE:
1.5 dB AT 2.0 GHz
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
18 (SOT 343 STYLE)
NE686
SERIES
19 (3 PIN ULTRA SUPER
MINI MOLD)
ers
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630
E 68 3 3
N
686 9
NE 863
E6
N
3 9R
686
NE
DESCRIPTION
The NE686 series of NPN epitaxial silicon transistors are
designed for low voltage/low current, amplifier and oscillator
applications. NE686's high f
T
make it an excellent choice for
portable wireless applications up to 5 GHz. The NE686 die is
available in six different low cost plastic surface mount pack-
age styles.
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
(T
A
= 25°C)
EIAJ
2
REGISTERED
PART NUMBER
1
NUMBER
PACKAGE OUTLINE
NE68618
2SC5180
18
NE68619
2SC5181
19
NE68630
2SC5179
30
NE68633
2SC5177
33
f
T
f
T
NF
MIN
NF
MIN
|S
21e
|
2
|S
21e
|
2
h
FE
I
CBO
I
EBO
C
RE4
P
T
R
TH(J-A)
R
TH(J-C)
Gain Bandwidth Product at
V
CE
= 2 V, I
C
= 7 mA, f = 2.0 GHz
Gain Bandwidth Product at
V
CE
= 1 V, I
C
= 5 mA, f = 2.0 GHz
Minimum Noise Figure at
V
CE
= 2 V, I
C
= 3 mA, f = 2.0 GHz
Minimum Noise Figure at
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
Insertion Power Gain at
V
CE
= 2V, I
C
=7 mA, f = 2.0 GHz
Insertion Power Gain at
V
CE
= 1V, I
C
=5 mA, f = 2.0 GHz
Forward Current Gain
3
at
V
CE
= 2 V, I
C
= 7 mA
Collector Cutoff Current
at V
CB
= 5 V, I
E
= 0 mA
Emitter Cutoff Current
at V
EB
= 1 V, I
C
= 0 mA
Feedback Capacitance at
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
Total Power Dissipation
Thermal Resistance
(Junction to Ambient)
GHz
GHz
dB
dB
12 15.5
10
13
10
13
7.5
7
9
10
13
8.5
12
8.5
8.5
12
8.5
1.5
1.5
12
2.0
2.0
1.5
1.5
2.0
2.0
1.5
1.5
9
2.0
2.0
1.5
1.5
9
2.0
2.0
dB
10
8
10.5
9
7.5
7
7.5
7
dB
8.5 11
70
7
8.5
8.5
140
70
140
70
140
70
140
70
nA
nA
pF
mW
°C/W
0.3
100
100
0.5
30
833
0.4
100
100
0.6
30
1250
0.4
100
100
0.6
30
833
0.5
100
100
0.6
30
625
39R (SOT 143R STYLE)
NE68639/39R
2SC5178/78R
39/39R
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
10.5 13.5
12
1.5
1.5
2.0
2.0
9.5 11.5
7.5 10.5
140
100
100
0.3
0.5
30
625
Thermal Resistance(Junction to Case)
°C/W
Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
3. Pulsed measurement, PW
≤
350
µs,
duty cycle
≤
2%.
4. The emitter terminal should be connected to the ground terminal of
the 3 terminal capacitance bridge.
California Eastern Laboratories
NE686 SERIES
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Operating
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
°C
°C
RATINGS
5
3
2
10
150
-65 to +150
NE68619
TYPICAL NOISE PARAMETERS
(T
A
= 25˚C)
FREQ.
(MHz)
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
ANG
Rn/50
V
CE =
0.5 V
,
I
C =
0.5 mA
500
800
1000
1500
0.96
1.03
1.10
1.42
15.00
12.50
11.94
6.69
0.76
0.76
0.72
0.67
0.73
0.69
0.66
0.63
0.59
0.53
0.63
0.60
0.56
0.53
0.48
0.44
0.30
0.50
0.48
0.46
0.42
0.38
0.33
0.28
0.63
0.60
0.56
0.53
0.48
0.44
0.40
16
30
40
48
14
28
38
46
56
70
15
28
37
43
51
62
71
14
28
33
41
53
65
77
15
28
37
43
51
62
71
1.20
1.13
1.09
1.10
1.09
0.82
0.80
0.78
0.75
0.68
0.59
0.55
0.52
0.51
0.50
0.47
0.38
0.55
0.53
0.52
0.51
0.49
0.39
0.35
0.68
0.62
0.60
0.58
0.56
0.50
0.36
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
NE68618
TYPICAL NOISE PARAMETERS
(T
A
= 25˚C)
FREQ.
(MHz)
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
ANG
Rn/50
V
CE =
1.0 V
,
I
C =
1.0 mA
500
0.91
17.59
800
1.00
15.38
1000
1.08
14.50
1500
1.35
9.78
2000
1.60
7.41
2500
1.80
6.15
V
CE =
1.0 V
,
I
C =
3.0 mA
500
800
1000
1500
2000
2500
3000
1.35
1.38
1.43
1.55
1.67
1.78
1.83
20.29
16.88
15.44
11.50
9.28
7.70
6.52
21.17
17.59
15.74
12.25
10.00
8.49
7.30
21.12
17.80
16.34
12.36
10.00
8.48
7.24
V
CE =
1.0 V
,
I
C =
1.0 mA
500
1.03
800
1.10
1000
1.15
1500
1.30
2000
1.52
2500
1.74
V
CE =
1.0 V
,
I
C =
3.0 mA
500
1.30
800
1.33
1000
1.36
1500
1.50
2000
1.67
2500
1.83
3000
1.98
V
CE =
2.0 V
,
I
C =
3.0 mA
500
800
1000
1500
2000
2500
3000
500
800
1000
1500
2000
2500
3000
1.30
1.33
1.36
1.50
1.67
1.83
1.98
2.15
2.17
2.20
2.28
2.42
2.55
2.70
21.96
18.38
16.61
13.20
10.81
9.22
8.00
23.2
19.21
17.52
14.18
11.81
10.09
8.78
0.61
0.58
0.55
0.50
0.46
0.41
0.36
0.39
0.36
0.32
0.27
0.24
0.21
0.17
13
23
28
37
45
54
64
14
20
27
36
45
51
61
0.66
0.58
0.57
0.55
0.50
0.47
0.38
0.58
0.56
0.55
0.51
0.48
0.43
0.29
18.47
17.10
14.81
10.20
7.97
6.65
21.08
17.51
15.75
12.35
10.03
8.47
7.30
0.76
0.69
0.66
0.63
0.58
0.51
0.61
0.58
0.55
0.50
0.46
0.41
0.36
14
29
34
40
50
61
13
23
28
37
45
54
64
0.96
0.83
0.78
0.67
0.58
0.53
0.56
0.53
0.52
0.50
0.48
0.44
0.33
V
CE =
1.0 V
,
I
C =
5.0 mA
500
1.68
800
1.70
1000
1.74
1500
1.83
2000
1.91
2500
2.00
3000
2.09
V
CE =
2.0 V
,
I
C =
3.0 mA
500
800
1000
1500
2000
2500
3000
1.35
1.38
1.43
1.55
1.67
1.78
1.83
V
CE =
2.0 V
,
I
C =
10.0 mA
NE686 Series
TYPICAL PERFORMANCE CURVES
(TA = 25°)
NE68618, NE68630
D.C. POWER DERATING CURVE
NE68619
D.C. POWER DERATING CURVE
Total Power Dissipation, P
T
(mW)
Total Power Dissipation, P
T
(mW)
FREE AIR
100
FREE AIR
100
50
50
0
0
50
100
150
0
0
50
100
150
Ambient Temperature, T
A
(°C)
Ambient Temperature, T
A
(°C)
NE68633, NE68639
D.C. POWER DERATING CURVE
25
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Total Power Dissipation, P
T
(mW)
FREE AIR
Collector Current, I
C
(mA)
100
20
200
µA
180
µA
160
µA
140
µA
120
µA
10
100
µA
80
µA
60
µA
5
40
µA
I
B
= 20
µA
15
50
0
0
50
100
150
0
0
2.2
2.4
2.6
Ambient Temperature, T
A
(°C)
Collector to Emitter Voltage, V
CE
(V)
NE686 SERIES
TYPICAL PERFORMANCE CURVES
(TA = 25°C)
NE68618
INSERTION GAIN vs.
COLLECTOR CURRENT
14
f = 2 GHz
NE68633
NOISE FIGURE vs.
COLLECTOR CURRENT
4
f = 2 GHz
Insertion Power Gain |S
21e
|
2
(dB)
12
Noise Figure, NF (dB)
3
10
2V
8
V
CE
= 1 V
2
V
CE
= 1 V
V
CE
= 2 V
1
6
4
1
2
5
10
0
1
2
5
10
20
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
D.C. CURRENT GAIN vs.
COLLECTOR CURRENT
500
NE68618
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
18
f = 2 GHz
Gain Bandwidth Product, f
T
(GHz)
16
2V
DC Current Gain, h
FE
200
V
CE
= 2 V
100
14
12
V
CE
= 1 V
50
10
8
6
V
CE
= 1 V
20
10
4
1
2
5
10
20
50
100
1
2
5
10
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
NE68630
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
0.8
Feed-back Capacitance, C
RE
(pF)
V
CE
= 2 V
f = 1 MHz
Collector Current, I
C
(mA)
40
0.6
30
0.4
20
0.2
10
0
0
0.5
1.0
0.0
2.0
4.0
6.0
8.0
10.0
Base to Emitter Voltage, VBE (V)
Collector to Base Voltage, V
CB
(V)
NE686 SERIES
TYPICAL SCATTERING PARAMETERS
(T
A
= 25°C)
.8
.6
.4
3
.2
4
5
10
20
1
1.5
2
90˚
135˚
45˚
S
22
5 GHz
.2
.4
.6
.8
1
1.5
2
S
22
0.1 GHz
3
4 5
10
0
180˚
-20
-10
-5
-4
S
11
5 GHz
-.2
S
11
0.1 GHz
S
21
0.1 GHz
S
12
0.1 GHz
.05 .010 .015 .020 .025
0˚
2.5
S
21
5 GHz
Coordinates in Ohms
Frequency in GHz
(V
CE
= 1 V, I
C
= 3 mA)
225˚
S
12
5 GHz
315˚
5
-3
-.4
-2
-.8
-1
NE68618
V
CE
= 0.5 V, I
C
= 0.5 mA
-.6
-1.5
7.5
270˚
FREQUENCY
GHz
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
MAG
0.981
0.965
0.910
0.873
0.775
0.675
0.584
0.505
0.363
0.298
S
11
ANG
-5.400
-19.400
-38.900
-47.700
-70.200
-90.800
-111.200
-130.500
-175.500
122.200
MAG
1.742
1.717
1.667
1.620
1.506
1.385
1.289
1.215
1.118
1.049
S
21
ANG
170.900
156.600
134.100
123.700
98.600
76.400
56.200
38.700
6.100
-26.800
MAG
0.018
0.069
0.130
0.156
0.208
0.241
0.261
0.273
0.289
0.289
S
12
ANG
85.100
72.900
56.400
48.600
30.500
15.000
1.800
-9.500
-29.700
-47.800
MAG
0.998
0.988
0.953
0.930
0.863
0.795
0.741
0.694
0.599
0.492
S
22
ANG
-4.500
-17.400
-33.800
-41.500
-59.000
-74.000
-86.800
-98.500
-120.800
-151.700
K
0.088
0.128
0.247
0.310
0.455
0.595
0.714
0.820
1.013
1.187
MAG
1
(dB)
19.858
13.959
11.080
10.164
8.598
7.594
6.936
6.484
5.181
2.982
V
CE
= 1.0 V, I
C
= 1.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.951
0.941
0.854
0.799
0.669
0.554
0.456
0.378
0.247
0.207
-6.200
-21.900
-43.300
-53.000
-75.800
-95.800
-114.500
-132.100
-176.200
114.600
3.324
3.232
3.027
2.879
2.529
2.211
1.969
1.781
1.543
1.397
171.000
154.800
131.200
120.700
95.900
74.800
55.800
39.300
8.700
-22.400
0.015
0.057
0.105
0.125
0.161
0.184
0.199
0.211
0.238
0.269
82.800
71.800
55.200
47.700
31.200
18.500
8.000
-0.500
-15.500
-31.300
0.995
0.976
0.919
0.884
0.793
0.715
0.657
0.611
0.520
0.411
-4.900
-19.000
-36.500
-44.400
-61.500
-75.600
-87.300
-97.900
-119.200
-151.100
0.119
0.147
0.277
0.341
0.507
0.656
0.793
0.907
1.075
1.165
23.456
17.536
14.598
13.623
11.961
10.798
9.954
9.264
6.442
4.693
V
CE
= 1.0 V, I
C
= 3.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.888
0.806
0.619
0.537
0.377
0.272
0.201
0.149
0.092
0.175
-9.000
-34.400
-61.800
-72.800
-95.200
-113.800
-131.800
-147.600
146.900
74.000
8.309
7.521
6.033
5.360
4.085
3.257
2.729
2.359
1.921
1.669
169.500
143.100
114.400
103.200
79.700
61.200
44.700
30.200
3.400
-24.300
0.015
0.053
0.088
0.101
0.126
0.148
0.168
0.190
0.240
0.292
86.700
66.400
50.300
44.600
34.100
26.500
19.300
12.500
-2.500
-20.500
0.981
0.905
0.758
0.695
0.582
0.516
0.478
0.453
0.387
0.284
-7.200
-27.100
-46.800
-54.100
-67.900
-78.500
-87.400
-96.200
-116.200
-150.600
0.058
0.266
0.486
0.580
0.782
0.921
1.015
1.072
1.114
1.116
27.435
21.520
18.361
17.248
15.108
13.426
11.363
9.303
6.980
5.501
V
CE
= 2.0 V, I
C
= 3.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
0.888
0.819
0.638
0.555
0.389
0.282
0.203
0.145
0.056
0.126
-8.100
-31.700
-57.400
-67.400
-87.700
-103.500
-118.000
-127.900
-178.900
66.600
8.454
7.701
6.259
5.586
4.289
3.425
2.868
2.472
2.004
1.747
169.600
144.300
116.100
105.000
81.500
63.000
46.600
32.300
5.900
-21.100
0.013
0.047
0.080
0.092
0.116
0.138
0.157
0.178
0.225
0.278
81.500
68.200
52.500
46.900
36.500
28.700
21.600
14.700
-0.200
-17.500
0.986
0.918
0.785
0.727
0.621
0.558
0.524
0.503
0.446
0.346
-6.600
-25.000
-43.400
-50.500
-63.800
-74.100
-82.800
-91.300
-109.700
-138.700
0.146
0.263
0.483
0.576
0.775
0.909
0.999
1.056
1.101
1.098
28.131
22.144
18.934
17.833
15.679
13.948
12.617
9.982
7.565
6.072
(
K
±
K
2
- 1
).
When K
≤
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
∆
| - |S
11
| - |S
22
|
,
∆
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
单片机
