SEMICONDUCTOR
NKT110A/NKH110A Series
Thyristor/Diode and Thyristor/Thyristor, 110A
(ADD-A-PAK
Power Modules)
RoHS
RoHS
N
ell
High Power Products
80
2-Ø6.4
6
7
1
2
3
13.6
5.6
(6)
(7)
(5)
(4)
(5)
(4)
ADD-A-PAK
15
20
92
20
15
FEATURES
•
High voltage
•
Electrically isolated by DBC ceramic
(AI
2
O
3
)
• 3000
V
RMS
isolating voltage
•
High surge capability
•
Glass passivated chips
•
Modules uses high voltage power thyristor/diodes in two
basic configurations
•
Simple mounting
•
UL approved file E320098
•
Compliant to RoHS
•
Designed and qualified for multiple level
29.5
31
3-M5 SCREWS
18
68
4-2.8x0.8
•
Industrial standard package
5
6
All dimensions in millimeters
APPLICATIONS
•
DC motor control and drives
•
Battery charges
•
Welders
•
Power converters
•
Lighting control
•
Heat and temperature control
4
5
NKT
NKH
PRODUCT SUMMARY
I
T(AV)
110
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
/I
FSM
I
2
t
I
2
√
t
V
DRM
/ V
RRM
T
J
Range
Range
CHARACTERISTICS
85 °C
85 °C
50
Hz
60
Hz
50
Hz
60
Hz
VALUE
110
173
2400
2520
28.8
26.3
288
400
to 1600
-40 to 125
kA
2
√s
V
°C
kA
2
s
A
UNITS
A
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Page 1 of 4
21
SEMICONDUCTOR
NKT110A/NKH110A Series
RoHS
RoHS
N
ell
High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
04
08
NKT110..A
NKH110..A
12
14
16
V
RRM
/V
DRM
,
MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1200
1400
1600
V
RSM
/V
DSM
,
MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1300
1500
1700
12
I
RRM
/I
DRM
AT
125 °C
mA
FORWARD CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle, on-state
non-repetitive surge current
SYMBOL
I
T(AV)
l
T(RMS)
I
TSM
TEST CONDITIONS
180°
conduction, half sine wave ,50Hz
180°
conduction, half sine wave ,50Hz ,T
C
= 85°C
t
= 10
ms
t
= 8.3
ms
t
= 10
ms
Maximum I
2
t for fusing
I
2
t
t
= 8.3
ms
t
= 10
ms
t
= 8.3
ms
Maximum I
2
√
for fusing
t
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
Maximum latching current
2
t
I
√
VALUE
110
85
173
2400
UNITS
A
°C
A
No voltage
reapplied
2520
Sine half wave,
initial T
J
=
T
J
maximum
28.8
26.3
20.2
18.4
288
1.6
V
1.3
150
400
mA
kA
2
√s
kA
2
s
100%V
RRM
reapplied
t
= 0.1
ms to
10
ms, no voltage reapplied
I
TM
= 330A ,
T
J
= 25 °C, 180°
conduction
I
FM
= 330A ,
T
J
= 25 °C, 180°
conduction
Anode supply
= 6
V,resistive load T
= 25 °C
,
J
Anode supply
= 6
V resistive load, T
= 25 °C
J
V
TM
V
FM
I
H
I
L
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS isolation Voltage
Critical rate of rise of
off-state voltage
SYMBOL
I
RRM
I
DRM
V
ISO
dV/dt
T
J
= 125 °C
50
Hz, circuit to base,
all terminals shorted
T
J
=
T
J
maximum,
exponential to
67 %
rated V
DRM
TEST CONDITIONS
VALUES
12
2500 (1min)
3000 (1s)
500
UNITS
mA
V
V/μs
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Page 2 of 4
SEMICONDUCTOR
NKT110A/NKH110A Series
RoHS
RoHS
N
ell
High Power Products
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative
gate voltage
Maximum required DC
gate voltage to trigger
Maximum required DC
gate current to trigger
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Maximum rate of rise of
turned-on current
SYMBOL
P
GM
P
G(AV)
I
GM
-
V
GT
V
GT
T
J
= 25 °C
I
GT
V
GD
T
J
=
T
J
maximum, 66.7% V
DRM
applied
I
GD
dI/dt
T
J
= 25ºC
,I
GM
= 1.5A ,t
r
≤
0.5 µs
10
150
mA
A/μs
Anode supply
= 6
V,
resistive load; R
a
= 1
Ω
20~150
mA
V
t
p
≤
5
ms, T
J
=
T
J
maximum
TEST CONDITIONS
t
p
≤
5
ms, T
J
=
T
J
maximum
f
= 50
Hz, T
J
=
T
J
maximum
VALUES
10
3
3
10
V
0.7~1.8
UNITS
W
A
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage
temperature range
Maximum thermal resistance,
junction to ca se per junction
Maximum thermal resistance,
case to heatsink per module
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth
,
flat and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3
hours to allow for the spread of the compound.
Lubricated threads.
TEST CONDITIONS
VALUES
- 40
to
125
°C
- 40
to
150
0.25
°C/W
0.069
UNITS
AAP to heatsink, M6
Mounting
torque
± 10 %
busbar to AAP, M5
4
N.m
Approximate weight
120
4.23
g
oz.
Case style
ADD-A-PAK
ORDERING INFORMATION TABLE
Device code
NK
T
110
/
16
A
1
1
2
3
4
5
-
-
-
-
-
2
3
4
5
Module type
Circuit configuration
Current rating: I
T(AV)
Voltage code x
100 =
V
RRM
Assembly type,”A” for soldering type
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Page 3 of 4
SEMICONDUCTOR
NKT110A/NKH110A Series
RoHS
RoHS
N
ell
High Power Products
Fig.1 Peak On-state Voltage vs. Peak On-state Current
3
Fig.2 Max. Junction To case Thermal Impedance Vs. Time
0.3
0.25
Thermal impedance (°C/W)
10
100
1000
Peak On-state voltage (V)
2.6
2.2
1.8
1.4
1
0.6
0.2
0.15
0.1
0.05
0
0.001
0.01
0.1
Time (s)
1
10
On-state current (A)
Fig.3 Power Dissipation Vs. Average On-state Current
300
Fig.4 Case Temperature Vs. Average O n-state Current
140
Power Dissipation (W)
120°
60°
30°
90°
Case Temperature (°C)
250
200
150
100
50
180°
120
100
80
60
40
20
30°
60°
90°
120°
180°
0
0
30
60
90
120
150
0
0
On-state average current (A)
30
60
90
120
150
180
210
On-state average current (A)
Fig.5 Surge On-state Current Vs. Cycles
2.5
Fig.6 Gate characteristics
Surge On-state current (KA)
2
Gate voltage (V)
2
10¹
5
2
10º
5
2
1.5
1
0.5
1
10
100
10¯¹
10¹
2
5
10¯²
2
5
10¯³
2
5
Cycles @50Hz
Gate current (mA)
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Page 4 of 4
