SEMICONDUCTOR
RoHS
NKT500/NKH500 Series
RoHS
N
ell
High Power Products
Thyristor/Diode and Thyristor/Thyristor, 500A
(SUPER
MAGN-A-PAK Power Modules)
48
50
38
4-Ø6.5
36+1
SUPER MAGN-A-PAK
14
112+1
128+1
150+3
3-M10 SCREWS
2.8x0.8+0.1
FEATURES
•
High voltage
•
Electrically isolated by DBC ceramic
(AI
2
O
3
)
• 3500
V
RMS
isolating voltage
•
Industrial standard package
•
High surge capability
•
Glass passivated chips
•
Modules uses high voltage power thyristor/diodes in two
basic configurations
•
Simple mounting
•
UL approved file E320098
•
Compliant to RoHS
•
Designed and qualified for multiple level
50
22
All dimensions in millimeters
APPLICATIONS
•
DC motor control and drives
•
Battery charges
•
Welders
•
Power converters
•
Lighting control
•
Heat and temperature control
•
Ups
~
+
K2
G2
~
+
-
G1
K1
NKT
-
G1
K1
NKH
PRODUCT SUMMARY
I
T(AV)
500
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
I
2
√
t
V
DRM/
V
RRM
T
J
Range
Range
CHARACTERISTICS
85 °C
85 °C
50
Hz
60
Hz
50
Hz
60
Hz
VALUES
500
785
16000
16800
1280
1167
12800
400
to 1600
-40 to 125
kA
2
s
kA
2
√s
V
°C
A
UNITS
A
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Page 1 of 4
53
60
66+1
48
SEMICONDUCTOR
RoHS
NKT500/NKH500 Series
RoHS
N
ell
High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
04
NKT500
NKH500
08
10
12
14
16
V
RRM
/V
DRM
,
MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1000
1200
1400
1600
V
RSM
/V
DSM
,
MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1100
1300
1500
1700
40
I
RRM
/I
DRM
AT
125 °C
mA
FORWARD CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle, on-state
non-repetitive surge current
SYMBOL
I
T(AV)
TEST CONDITIONS
180°
conduction, half sine wave ,50Hz
180°
conduction, half sine wave ,50Hz ,T
C
= 85°C
t
= 10
ms
t
= 8.3
ms
t
= 10
ms
Maximum I
2
t for fusing
I
2
t
t
= 8.3
ms
t
= 10
ms
t
= 8.3
ms
Maximum I
2
√
for fusing
t
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
Maximum latching current
2
t
I
√
VALUES
500
85
785
16000
UNITS
A
°C
l
T(RMS)
I
TSM
A
No voltage
reapplied
16800
Sine half wave,
initial T
J
=
T
J
maximum
1280
1167
896
818
12800
1.7
V
1.4
300
mA
500
kA
2
√s
kA
2
s
100%V
RRM
reapplied
t
= 0.1
ms to
10
ms, no voltage reapplied
V
TM
V
FM
I
H
I
L
l
TM
= 1500A,
T
J
= 25 °C, 180°
conduction
I
FM
= 1500A,
T
J
= 25 °C, 180°
conduction
Anode supply
= 12
V initial I
T
= 30
A, T
J
= 25 °C
Anode supply
= 12
V resistive load
= 1
Ω
Gate pulse:
10
V,
100 μs,
T
J
= 25 °C
SWITCHING
PARAMETER
Typical delay time
Typical rise time
Typical tum-off time
SYMBOL
t
d
t
r
t
q
TEST CONDITIONS
T
J
= 25 °C
,gate current = 1A dl
g
/dt = 1 A/µs
V
d
= 0.67 % V
DRM
I
TM
= 300A ; dl/dt = 15 A/µs ; T
J
= T
J
maximum,
V
R
= 50V ; dV/dt = 20V/µs ; gate 0V ,100Ω
VALUES
1
2
μs
50 to 150
UNITS
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Page 2 of 4
SEMICONDUCTOR
RoHS
NKT500/NKH500 Series
RoHS
N
ell
High Power Products
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS isolation Voltage
Critical rate of rise of
off-state voltage
SYMBOL
I
RRM
,
I
DRM
V
ISO
dV/dt
T
J
= 125 °C
50
Hz, circuit to base,
all terminals shorted, 25
ºC
,1s
T
J
=
T
J
maximum,
exponential to
67 %
rated V
DRM
TEST CONDITIONS
VALUES
40
3500
500
UNITS
mA
V
V/μs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative
gate voltage
Maximum required DC
gate voltage to trigger
Maximum required DC
gate current to trigger
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Maximum rate of rise of
turned-on current
SYMBOL
P
GM
P
G(AV)
I
GM
-
V
GT
V
GT
T
J
= 25 °C
I
GT
V
GD
T
J
=
T
J
maximum, 67% V
DRM
applied
I
GD
dI/dt
T
J
= 25ºC
,I
GM
= 1.5A ,t
r
≤
0.5 µs
10
150
mA
A/μs
Anode supply
= 12
V,
resistive load; R
a
= 1
Ω
200
mA
V
t
p
≤
5
ms, T
J
=
T
J
maximum
TEST CONDITIONS
t
p
≤
5
ms, T
J
=
T
J
maximum
f
= 50
Hz, T
J
=
T
J
maximum
VALUES
15
5
3
10
V
2
UNITS
W
A
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
junction operating and storage
temperature range
Maximum thermal resistance,
junction to case per junction
Typical thermal resistance,
case to heatsink per module
SYMBOL
T
J
, T
stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth
,
flat and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
about
3
hours to allow for the
spread of the compound.
TEST CONDITIONS
VALUES
- 40
to
125
0.065
°C/W
0.01
4
N.m
12
1800
63.5
Case style
SUPER MAGN-A-PAK
g
oz.
UNITS
°C
Mounting
torque
± 10 %
IAP to heatsink , M6
busbar to IAP , M10
Approximate weight
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Page 3 of 4
SEMICONDUCTOR
RoHS
NKT500/NKH500 Series
RoHS
N
ell
High Power Products
Fig.1 On-state current vs. voltage characteristics
3.6
Fig.2 Transient thermal impedance(junction-case)
0.07
Transient thermal impedance (°C/W)
3.2
0.06
0.05
0.04
0.03
0.02
0.01
0
0.001
0.01
0.1
Time (s)
1
10
On-state peak voltage (V)
T
J
= 125°C
2.8
2.4
2
1.6
1.2
0.8
100
1000
10000
On-state current (A)
Fig.3 Power consumption vs. average current
800
Fig.4 Case temperature vs. on-state average current
140
Maximum power consumption (W)
180°
0
180
120°
90°
ase temperature (°C)
120
0
180
600
Conduction Angle
100
80
60
40
20
30°
60°
60°
Conduction Angle
30°
400
200
90°
120° 180°
0
0
100
200
300
400
500
600
On-state average current (A)
0
0
200
400
600
800
1000
On-state average current (A)
Fig.5 On-state surge current vs cycles
18
1500
Fig.6 I t characteristics
2
On-state surge current (KA)
16
14
12
10
8
6
4
1
10
100
1300
1100
900
700
500
300
1
10
A S (1000A S)
2
2
Cycles @50Hz
Time (ms)
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Page 4 of 4
