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NL27WZ04DFT4

DUAL 1-INPUT INVERT GATE, PDSO6, SC-70, SC-88, SOT-363, 6 PIN

器件类别:逻辑    逻辑   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
ON Semiconductor(安森美)
零件包装代码
SOT-363
包装说明
TSSOP, TSSOP6,.08
针数
6
Reach Compliance Code
not_compliant
JESD-30 代码
R-PDSO-G6
JESD-609代码
e0
长度
2 mm
负载电容(CL)
50 pF
逻辑集成电路类型
INVERTER
最大I(ol)
0.024 A
功能数量
2
输入次数
1
端子数量
6
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
TSSOP
封装等效代码
TSSOP6,.08
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
包装方法
TAPE AND REEL
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
3.3 V
传播延迟(tpd)
5.6 ns
认证状态
Not Qualified
施密特触发器
NO
座面最大高度
1.1 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
2.3 V
标称供电电压 (Vsup)
2.5 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
0.65 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
1.25 mm
文档预览
NL27WZ04
Dual Inverter
The NL27WZ04 is a high performance dual inverter operating from
a 1.65 V to 5.5 V supply. High impedance TTL compatible inputs
significantly reduce current loading to input drivers while TTL
compatible outputs offer improved switching noise performance.
Features
http://onsemi.com
MARKING
DIAGRAMS
SC−88
(SC70−6/SOT−363)
DF SUFFIX
CASE 419B
6
M5 M
G
G
M
Extremely High Speed: t
PD
2.0 ns (typical) at V
CC
= 5 V
Designed for 1.65 V to 5.5 V V
CC
Operation
Over Voltage Tolerant Inputs and Outputs
LVTTL Compatible
Interface Capability with 5 V TTL Logic
with V
CC
= 3 V
LVCMOS Compatible
24 mA Balanced Output Sink and Source Capability
Near Zero Static Supply Current Substantially Reduces System
Power Requirements
Replacement for NC7W04
Chip Complexity: FET = 72; Equivalent Gate = 18
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
1
1
1
M5
M
G
TSOP−6
DT SUFFIX
CASE 318G
1
= Device Code
= Date Code*
= Pb−Free Package
M5 M
G
G
(Note: Microdot may be in either location)
IN A1
1
6
OUT Y1
*Date Code orientation and/or position and underbar
may vary depending upon manufacturing location.
GND
2
5
V
CC
PIN ASSIGNMENT
Pin
Function
IN A1
GND
IN A2
OUT Y2
V
CC
OUT Y1
IN A2
3
4
OUT Y2
1
2
3
4
5
6
Figure 1. Pinout
(Top View)
IN A1
IN A2
1
1
OUT Y1
OUT Y2
FUNCTION TABLE
A Input
L
H
Y Output
H
L
Figure 2. Logic Symbol
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
©
Semiconductor Components Industries, LLC, 2013
March, 2013
Rev. 10
1
Publication Order Number:
NL27WZ04/D
NL27WZ04
MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
I
CC
I
GND
T
STG
P
D
q
JA
T
L
T
J
V
ESD
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Output in HIGH or LOW State (Note 1)
DC Input Diode Current
DC Output Diode Current
DC Output Source/Sink Current
DC Supply Current Per Supply Pin
DC Ground Current Per Ground Pin
Storage Temperature Range
Power Dissipation in Still Air
SC−88, TSOP−6 (Note 2)
Thermal Resistance
SC−88, TSOP−6 (Note 2)
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
ESD Withstand Voltage
Human Body Model (Note 3)
Machine Model (Note 4)
Charged Device Model (Note 5)
Latchup Performance Above V
CC
and Below GND at 125°C (Note 6)
V
I
< GND
V
O
< GND
Characteristics
Value
−0.5
to +7.0
−0.5
V
I
+7.0
−0.5
V
O
7.0
−50
−50
±50
±100
±100
−65
to +150
200
333
260
+150
> 2000
> 200
N/A
±100
Units
V
V
V
mA
mA
mA
mA
mA
°C
mW
°C/W
°C
°C
V
I
LATCHUP
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. I
O
absolute maximum rating must be observed.
2. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
3. Tested to EIA/JESD22−A114−A
4. Tested to EIA/JESD22−A115−A
5. Tested to JESD22−C101−A
6. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Operating
Data Retention Only
Input Voltage
Output Voltage (HIGH or LOW State)
Operating Free−Air Temperature
Input Transition Rise or Fall Rate
V
CC
= 2.5 V
±0.2
V
V
CC
= 3.0 V
±0.3
V
V
CC
= 5.0 V
±0.5
V
Symbol
V
CC
Min
1.65
1.5
0
0
−55
0
0
0
Max
5.5
5.5
5.5
5.5
+125
20
10
5
Units
V
V
I
V
O
T
A
Dt/DV
V
V
°C
ns/V
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2
NL27WZ04
DC ELECTRICAL CHARACTERISTICS
V
CC
Parameter
High−Level Input
Voltage
Low−Level Input
Voltage
High−Level Output
Voltage
V
IN
= V
IL
I
OH
=
−100
mA
I
OH
=
−3
mA
I
OH
=
−8
mA
I
OH
=
−12
mA
I
OH
=
−16
mA
I
OH
=
−24
mA
I
OH
=
−32
mA
Low−Level Output
Voltage
V
IN
= V
IH
I
OL
= 100
mA
I
OL
= 3 mA
I
OL
= 8 mA
I
OL
= 12 mA
I
OL
= 16 mA
I
OL
= 24 mA
I
OL
= 32 mA
Input Leakage Current
Power Off
Leakage Current
Quiescent Supply
Current
V
IN
= 5.5 V or GND
V
IN
= 5.5 V or
V
OUT
= 5.5 V
V
IN
= 5.5 V or GND
I
IN
I
OFF
I
CC
V
OL
Condition
Symbol
V
IH
V
IL
V
OH
(V)
1.65−1.95
2.3 to 5.5
1.65−1.95
2.3 to 5.5
1.65 to 5.5
1.65
2.3
2.7
3.0
3.0
4.5
1.65 to 5.5
1.65
2.3
2.7
3.0
3.0
4.5
0 to 5.5
0
5.5
0.08
0.20
0.22
0.28
0.38
0.42
V
CC
0.1
1.29
1.9
2.2
2.4
2.3
3.8
V
CC
1.52
2.1
2.4
2.7
2.5
4.0
0.1
0.24
0.3
0.4
0.4
0.55
0.55
±0.1
1
1
Min
0.75 V
CC
0.7 V
CC
0.25 V
CC
0.3 V
CC
V
CC
0.1
1.29
1.9
2.2
2.4
2.3
3.8
0.1
0.24
0.3
0.4
0.4
0.55
0.55
±1.0
10
10
mA
mA
mA
V
T
A
= 25°C
Typ
Max
−55°C
3
T
A
3
125°C
Min
0.75 V
CC
0.7 V
CC
0.25 V
CC
0.3 V
CC
V
V
Max
Units
V
AC ELECTRICAL CHARACTERISTICS
t
R
= t
F
= 2.5 ns; C
L
= 50 pF; R
L
= 500
W
Parameter
Propagation Delay
(Figure 3 and 4)
Condition
R
L
= 1 MW, C
L
= 15 pF
R
L
= 1 MW, C
L
= 15 pF
R
L
= 1 MW, C
L
= 15 pF
R
L
= 1 MW, C
L
= 15 pF
R
L
= 500
W,
C
L
= 50 pF
R
L
= 1 MW, C
L
= 15 pF
R
L
= 500
W,
C
L
= 50 pF
5.0
±
0.5
Symbol
t
PLH
t
PHL
V
CC
(V)
1.65
1.8
2.5
±
0.2
3.3
±
0.3
T
A
= 25°C
Min
1.8
1.8
1.2
0.8
1.2
0.5
0.8
Typ
2.3
4.4
3.0
2.2
2.9
1..8
2.3
Max
9.2
7.6
5.1
3.4
4.5
2.8
3.6
−55°C
3
T
A
3
125°C
Min
1.8
1.8
1.2
0.8
1.2
0.5
0.8
Max
11.0
8.4
5.6
3.8
5.0
3.1
4.0
Units
ns
CAPACITIVE CHARACTERISTICS
Parameter
Input Capacitance
Power Dissipation
Capacitance (Note 7)
Symbol
C
IN
C
PD
Condition
V
CC
= 5.5 V, V
I
= 0 V or V
CC
10 MHz, V
CC
= 3.3 V, V
I
= 0 V or V
CC
10 MHz, V
CC
= 5.5 V, V
I
= 0 V or V
CC
Typical
2.5
9
11
Units
pF
pF
7. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD

V
CC

f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD

V
CC2

f
in
+ I
CC

V
CC
.
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3
NL27WZ04
A
V
CC
50%
t
PLH
t
PHL
GND
Y
50% V
CC
PROPAGATION DELAYS
t
R
= t
F
= 2.5 ns, 10% to 90%; f = 1 MHz; t
W
= 500 ns
Figure 3. Switching Waveforms
V
CC
PULSE
GENERATOR
R
T
DUT
C
L
R
L
R
T
= Z
OUT
of pulse generator (typically 50
W)
Figure 4. Test Circuit
ORDERING INFORMATION
Device
NL27WZ04DFT1G
NL27WZ04DFT2G
NLV27WZ04DFT1G*
NLV27WZ04DFT2G*
NL27WZ04DTT1G
Package
SC−88/SC70−6/SOT−363
(Pb−Free)
SC−88/SC70−6/SOT−363
(Pb−Free)
SC−88/SC70−6/SOT−363
(Pb−Free)
SC−88/SC70−6/SOT−363
(Pb−Free)
TSOP−6
(Pb−Free)
Shipping
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
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4
NL27WZ04
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
2X
aaa H D
D
A
D
5
4
H
GAGE
PLANE
6
E
1
2X
2
3
E1
L2
L
DETAIL A
aaa C
bbb H D
2X 3 TIPS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
INCHES
MIN
NOM MAX
−−−
−−−
0.043
0.000
−−−
0.004
0.027 0.035 0.039
0.006 0.008 0.010
0.003 0.006 0.009
0.070 0.078 0.086
0.078 0.082 0.086
0.045 0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
e
B
TOP VIEW
6X
b
ddd
A2
A
M
C A-B D
DETAIL A
6X
ccc C
SIDE VIEW
A1
C
SEATING
PLANE
END VIEW
c
RECOMMENDED
SOLDERING FOOTPRINT*
0.30
6X
0.66
6X
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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参数对比
与NL27WZ04DFT4相近的元器件有:NL27WZ04DTT3。描述及对比如下:
型号 NL27WZ04DFT4 NL27WZ04DTT3
描述 DUAL 1-INPUT INVERT GATE, PDSO6, SC-70, SC-88, SOT-363, 6 PIN DUAL 1-INPUT INVERT GATE, PDSO6, SC-59, SOT-23, TSOP-6
是否Rohs认证 不符合 不符合
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美)
零件包装代码 SOT-363 TSOP
包装说明 TSSOP, TSSOP6,.08 TSOP, TSOP6,.11,37
针数 6 6
Reach Compliance Code not_compliant not_compliant
JESD-30 代码 R-PDSO-G6 R-PDSO-G6
JESD-609代码 e0 e0
长度 2 mm 3 mm
负载电容(CL) 50 pF 50 pF
逻辑集成电路类型 INVERTER INVERTER
最大I(ol) 0.024 A 0.024 A
功能数量 2 2
输入次数 1 1
端子数量 6 6
最高工作温度 85 °C 85 °C
最低工作温度 -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSSOP TSOP
封装等效代码 TSSOP6,.08 TSOP6,.11,37
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE
包装方法 TAPE AND REEL TAPE AND REEL
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
电源 3.3 V 3.3 V
传播延迟(tpd) 5.6 ns 5.6 ns
认证状态 Not Qualified Not Qualified
施密特触发器 NO NO
座面最大高度 1.1 mm 1.1 mm
最大供电电压 (Vsup) 5.5 V 5.5 V
最小供电电压 (Vsup) 2.3 V 2.3 V
标称供电电压 (Vsup) 2.5 V 2.5 V
表面贴装 YES YES
技术 CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 GULL WING GULL WING
端子节距 0.65 mm 0.95 mm
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
宽度 1.25 mm 1.5 mm
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