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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP20P06SLG
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The NP20P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP20P06SLG-E1-AY
NP20P06SLG-E2-AY
Note
Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
PACKAGE
TO-252 (MP-3ZK)
Note
Pb-free (This product does not contain Pb in external electrode.)
FEATURES
•
Super low on-state resistance
R
DS(on)1
= 48 mΩ MAX. (V
GS
=
−10
V, I
D
=
−10
A)
R
DS(on)2
= 64 mΩ MAX. (V
GS
=
−4.5
V, I
D
=
−10
A)
•
Low input capacitance
C
iss
= 1650 pF TYP.
•
Built-in gate protection diode
(TO-252)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
−60
m20
m20
m60
38
1.2
175
−55
to
+175
17
28
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
=
−30
V, R
G
= 25
Ω,
V
GS
=
−20 →
0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
3.9
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19076EJ1V0DS00 (1st edition)
Date Published December 2007 NS
Printed in Japan
2007
NP20P06SLG
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(th)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
=
−60
V, V
GS
= 0 V
V
GS
=
m20
V, V
DS
= 0 V
V
DS
= V
GS
, I
D
=
−250
μ
A
V
DS
=
−10
V, I
D
=
−10
A
V
GS
=
−10
V, I
D
=
−10
A
V
GS
=
−4.5
V, I
D
=
−10
A
V
DS
=
−10
V,
V
GS
= 0 V,
f = 1 MHz
V
DD
=
−30
V, I
D
=
−10
A,
V
GS
=
−10
V,
R
G
= 0
Ω
MIN.
TYP.
MAX.
−10
m10
UNIT
μ
A
μ
A
V
S
−1.0
7
−1.6
14
36
42
1650
200
130
8
8
160
80
−2.5
Drain to Source On-state Resistance
48
64
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
=
−48
V,
V
GS
=
−10
V,
I
D
=
−20
A
I
F
=
−20
A, V
GS
= 0 V
I
F
=
−20
A, V
GS
= 0 V,
di/dt =
−100
A/
μ
s
34
4
9
0.95
38
51
1.5
V
ns
nC
Note
Pulsed test PW
≤
350
μ
s, Duty Cycle
≤
2%
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
=
−20 →
0 V
−
I
D
V
DD
50
Ω
L
V
DD
PG.
BV
DSS
V
DS
V
GS
(−)
0
τ
Starting T
ch
τ
= 1
μ
s
Duty Cycle
≤
1%
V
DS
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
L
R
G
V
DD
V
DS
(−)
90%
10% 10%
90%
V
GS
(−)
V
GS
Wave Form
0
10%
V
GS
90%
I
AS
V
DS
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
=
−2
mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D19076EJ1V0DS
NP20P06SLG
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
dT - Percentage of Rated Power - %
100
80
60
40
20
0
0
25
50
75
100 125 150 175 200
P
T
- Total Power Dissipation - W
40
30
20
10
0
0
25
50
75
100 125 150 175 200
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
-1000
-100
I
D(pulse)
1
i
T
C
- Case Temperature -
°C
I
D
- Drain Current - A
-10
-1
-0.1
t ed
imi )
)
L
V
(on
i
0
S
R
D S
=
−
1
G
(V
I
D(DC)
PW
m
=1
i
00
μ
s
s
i
DC
Po
w
er
D
1
i
0
m
s
i
is
si
p
at
io
n
Li
m
it e
d
T
C
= 25°C
Single Pulse
-0.01
-0.1
-1
-10
-100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
R
th(ch-A)
= 125°C/Wi
100
10
R
th(ch-C)
= 3.9°C/Wi
1
0.1
Single Pulse
0.01
100
μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D19076EJ1V0DS
3
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