NPT2018
Preliminary
Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT
Built using the SIGANTIC
®
process - A proprietary GaN-on-Silicon technology
Features
Suitable for linear and saturated applications
Tunable from DC-6 GHz
48V Operation
Industry Standard Plastic Package
High Drain Efficiency (>60%)
Applications
Defense Communications
Land Mobile Radio
Avionics
Wireless Infrastructure
ISM Applications
VHF/UHF/L/S-Band Radar
DC-6 GHz
12.5W
GaN HEMT
Product Description
The NPT2018 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This
device has been designed for CW, pulsed, and linear operation with output power levels to
12.5W (41 dBm) in an industry standard surface mount plastic package.
RF Specifications (CW, 2.5 GHz):
V
DS
= 48V, I
DQ
= 75mA, T
C
= 25°C
Symbol
G
SS
P
SAT
SAT
G
P
V
DS
Parameter
Small-signal Gain
Saturated Output Power
Efficiency at Saturated Output Power
Gain at P
OUT
= 12.5W
Drain Efficiency at P
OUT
= 12.5W
Drain Voltage
Ruggedness: Output Mismatch, all phase angles
Min
-
-
-
-
-
-
Typ
17.5
41.8
60
16.5
55
48
Max
-
-
-
-
-
-
Units
dB
dBm
%
dB
%
V
VSWR = 10:1, No Device Damage
Preliminary Datasheet
Page 1
NDS-042 Rev. 2, 020314
NPT2018
DC Specifications
:
T
C
= 25°C
Symbol
I
DLK
Preliminary
Min
-
Parameter
Drain-Source Leakage Current
(V
GS
=-8V, V
DS
=160V)
Typ
-
Max
3
Units
mA
Off Characteristics
I
GLK
Gate-Source Leakage Current
(V
GS
=-8V, V
DS
=0V)
Gate Threshold Voltage
(V
DS
=48V, I
D
=3mA)
Gate Quiescent Voltage
(V
DS
=48V, I
D
=75mA)
On Resistance
(V
DS
=2V, I
D
=22mA)
Maximum Drain Current
(V
DS
=7V pulsed, 300µS pulse width,
0.2% Duty Cycle)
-
-
1.5
mA
On Characteristics
V
T
V
GSQ
R
ON
I
D, MAX
-2.5
-2.1
-
-
-1.5
-1.2
1.6
1.75
-0.5
-0.3
-
-
V
V
A
Thermal Resistance Specification:
Symbol
R
JC
Parameter
Thermal Resistance (Junction-to-Case),
T
J
= 200 °C
Typ
6.5
Units
°C/W
Junction Temperature (T
J
) measured using IR Microscopy, Case Temperature (T
C
) measured using a thermocouple embedded in
heatsink.
Absolute Maximum Ratings:
Not simultaneous, T
C
= 25°C unless otherwise noted
Symbol
V
DS
Parameter
Drain-Source Voltage
Max
160
Units
V
V
GS
I
G
P
T
T
STG
T
J
HBM
MSL
Gate-Source Voltage
Gate Current
Total Device Power Dissipation (Derated above 25°C)
Storage Temperature Range
Operating Junction Temperature
Human Body Model ESD Rating (per JESD22-A114)
Moisture sensitivity level (per IPC/JEDEC J-STD-020)
-10 to 3
6
26.9
-65 to 150
200
Class 1A
TBD
V
mA
W
°C
°C
Preliminary Datasheet
Page 2
NDS-042 Rev. 2, 020314
NPT2018
Optimum Source and Load Impedances:
Preliminary
V
DS
=48V, I
DQ
=75mA, T
C
=25C unless otherwise noted
Load-Pull Data, Reference Plane at Device Leads
(CW Drain Efficiency and Output Power Tradeoff Impedance)
Frequency
(MHz)
900
2500
4000
5800
Z
S
()
Z
L
()
P
SAT
(W)
G
SS
(dB)
Drain Efficiency
@ P
SAT
(%)
8.8 + j10.3
4.1 - j2.9
4.5 - j9.5
5.3 - j21.5
31 + j36
12.5 + j18
7.5 + j9.4
5.0 - j1.6
17
16
14
12
25.0
18.0
15.0
13.5
64
59
51
45
Figure 1:
CW Power/Drain Efficiency
Tradeoff Impedances, Z
O
=50
30
25
20
15
10
5
20
900MHz
2500MHz
4000MHz
5800MHz
25
30
35
40
45
P
OUT
(dBm)
70
60
Drain Efficiency (%)
50
40
30
20
10
0
20
Gain (dB)
900MHz
2500MHz
4000MHz
5800MHz
25
30
35
40
45
P
OUT
(dBm)
Figure 2:
Gain vs. P
OUT
Preliminary Datasheet
Page 3
Figure 3:
Efficiency vs. P
OUT
NDS-042 Rev. 2, 020314
NPT2018
Preliminary
Figure 4 -
DFN3X6-14 Plastic Package Dimensions (all dimensions in inches [millimeters])
Pin
Function
10, 11, 12
3, 4, 5
Exposed Pad
1, 2, 6-9, 13, 14
Gate — RF Input
Drain — RF Output
Source — Ground
No Connect*
* All No Connect pins may be left floating or grounded
Preliminary Datasheet
Page 4
NDS-042 Rev. 2, 020314
NPT2018
Nitronex, LLC
523 Davis Drive, Suite 500
Morrisville, NC 27560 USA
+1.919.807.9100 (telephone)
+1.919.4 7 2.0692 (fax)
info@nitronex.com
www.nitronex.com
Preliminary
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
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Preliminary Datasheet
Page 5
NDS-042 Rev. 2, 020314
