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NSVF5488SKT3G

射频(RF)双极晶体管 BIP NPN 70MA 10V F

器件类别:分立半导体    晶体管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
包装说明
SMALL OUTLINE, R-PDSO-F3
制造商包装代码
631AC
Reach Compliance Code
compliant
Factory Lead Time
4 weeks
Samacsys Description
BIP NPN 70MA 10V FT=7G
最大集电极电流 (IC)
0.07 A
基于收集器的最大容量
1.2 pF
集电极-发射极最大电压
10 V
配置
SINGLE
最小直流电流增益 (hFE)
90
最高频带
ULTRA HIGH FREQUENCY BAND
JESD-30 代码
R-PDSO-F3
JESD-609代码
e6
湿度敏感等级
1
元件数量
1
端子数量
3
最高工作温度
150 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
NPN
功耗环境最大值
0.1 W
最大功率耗散 (Abs)
0.1 W
参考标准
AEC-Q101
表面贴装
YES
端子面层
Tin/Bismuth (Sn/Bi)
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
7000 MHz
Base Number Matches
1
文档预览
NSVF5488SK
Product Preview
RF Transistor for Low Noise
Amplifier
10 V, 70 mA, f
T
= 7 GHz typ. RF Transistor
This RF transistor is designed for RF amplifier applications. SSFP
package is contribute to down size of application because it is small
surface mount package. This RF transistor is AEC−Q101 qualified and
PPAP capable for automotive applications.
Features
www.onsemi.com
3
1
2
Low−noise:
NF = 1.0 dB typ. (f = 1 GHz)
High Gain:
|S21e|
2
= 12 dB typ. (f = 1 GHz)
High Cut−off Frequency: f
T
= 7 GHz typ.
SSFP Package is Pin−compatible with SOT−623
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
RF Amplifier for RKE
RF Amplifier for ADAS
RF Amplifier for Remote Engine Starter
RF Amplifier for UHF Application
SOT−623 / SSFP
CASE 631AC
ELECTRICAL CONNECTION NPN
3
1
1 : Base
2 : Emitter
3 : Collector
Typical Applications
2
MARKING DIAGRAM
LOT No.
LOT No.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
LN
LN
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2018
June, 2018
Rev. P1
1
Publication Order Number:
NSVF5488SK/D
NSVF5488SK
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Dissipation
Operating Junction and Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj, Tstg
Value
20
10
2
70
100
−55
to +150
Unit
V
V
V
mA
mW
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS
at Ta = 25°C
Value
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain−Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Symbol
I
CBO
I
EBO
h
FE
f
T
Cob
Cre
| S21e |
2
1
| S21e |
2
2
NF
V
CE
= 5 V, I
C
= 20 mA, f
=
1 GHz
V
CE
= 2 V, I
C
= 3 mA, f
=
1 GHz
V
CE
= 5 V, I
C
= 7 mA, f
=
1 GHz
9
Conditions
V
CB
= 10 V, I
E
= 0 A
V
EB
= 1 V, I
C
= 0 A
V
CE
= 5 V, I
C
= 20 mA
V
CE
= 5 V, I
C
= 20 mA
V
CB
= 10 V, f = 1 MHz
90
5
7
0.7
0.45
12
8.5
1.0
1.8
1.2
Min
Typ
Max
1.0
10
200
GHz
pF
pF
dB
dB
dB
Unit
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pay attention to handling since it is liable to be affected by static electricity due to the high−frequency process adopted.
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2
NSVF5488SK
TYPICAL CHARACTERISTICS
hFE
−−
IC
Gain−Bandwidth Product, fT
−−
GHz
VCE=5V
3
2
2
fT
−−
IC
VCE=5V
10
7
5
3
2
DC Current Gain, h FE
100
7
5
3
2
10
7
5
3
5
7
1.0
2
3
57
10
22
3
57
100
1.0
7
5
72 1.0
2
3
5
7
10
2
3
5
7
100
Collector Current, IC
−−
mA
Collector Current, I C
−−
mA
Figure 1.
Reverse Transfer Capacitance, Cre
−−
pF
3
Figure 2.
3
2
Cob
−−
VCB
f=1MHz
Cre
−−
VCB
f=1MHz
Output Capacitance, Cob
−−
pF
2
1.0
7
5
3
2
1.0
7
5
3
2
0.1
7
5
7 0.1
25 3
73 1.0
2
5
7
10
2
3
0.1
7
5
7 0.1
25 3
73 1.0
2
5
7
10
2
3
Collector−to−Base Voltage, VCB
−−V
Collector−to−Base Voltage, VCB
−−V
Figure 3.
12
Figure 4.
14
12
10
8
6
4
2
0
NF
−−
IC
−−
dB
VCE= 5 V
f = 1 GHz
|
S21e
|
V CE =5V
2
−−
IC
f=1GHz
10
Noise Figure, NF
−−
dB
6
4
2
0
3
5
7
1.0
2
3
57
Collector Current, I C
−−
mA
10
22
3
57
100
33
57
1.0
2
2V
5
7 10
8
Forward Transfer Gain,
|
S21e
|
2
2
3
5
Collector Current, I C
−−
mA
7 100
2
Figure 5.
Figure 6.
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3
NSVF5488SK
TYPICAL CHARACTERISTICS
120
PC
−−
Ta
Collector Dissipation, P C
−−
mW
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta
−−
_C
Figure 7.
www.onsemi.com
4
NSVF5488SK
S PARAMETERS (COMMON EMITTER)
Freq (MHz)
100
200
400
600
800
1000
1200
1400
1600
1800
2000
100
200
400
600
800
1000
1200
1400
1600
1800
2000
100
200
400
600
800
1000
1200
1400
1600
1800
2000
|S11|
0.786
0.677
0.546
0.492
0.473
0.465
0.457
0.451
0.449
0.454
0.460
0.601
0.497
0.435
0.419
0.414
0.413
0.413
0.411
0.413
0.416
0.422
0.888
0.815
0.690
0.616
0.584
0.566
0.555
0.546
0.541
0.545
0.547
-S11
−40.7
−72.4
−112.7
−135.2
−150.0
−160.0
−169.5
−176.2
177.8
172.5
167.1
−65.8
−103.7
−139.6
−156.6
−166.6
−174.0
178.6
173.8
169.6
165.1
160.3
−30.2
−56.4
−96.0
−120.7
−138.0
−150.7
−161.2
−169.3
−176.4
177.1
170.9
|S21|
17.507
13.998
9.061
6.442
5.005
4.073
3.449
2.989
2.658
2.378
2.154
28.967
19.309
10.891
7.461
5.695
4.613
3.870
3.345
2.960
2.655
2.406
9.280
8.218
6.074
4.517
3.610
2.995
2.540
2.213
1.982
1.774
1.614
-S21
151.3
131.4
108.6
96.1
87.3
80.4
74.0
68.6
63.8
58.4
54.0
137.1
116.6
98.6
89.3
82.5
77.0
71.8
66.9
62.7
58.0
54.0
158.6
141.3
116.7
101.4
90.4
81.9
74.2
67.5
62.0
55.9
50.9
|S12|
0.028
0.046
0.064
0.076
0.087
0.099
0.111
0.124
0.138
0.151
0.166
0.023
0.035
0.050
0.065
0.081
0.098
0.114
0.131
0.148
0.165
0.182
0.038
0.067
0.098
0.112
0.120
0.125
0.131
0.137
0.143
0.152
0.163
-S12
70.1
58.0
49.6
49.3
50.8
52.6
54.0
55.2
56.6
56.7
56.7
64.1
57.0
58.7
61.3
63.1
63.8
63.9
63.6
63.2
61.8
60.6
73.6
60.5
45.1
38.4
35.8
35.7
36.5
38.4
40.7
42.5
44.7
|S22|
0.898
0.739
0.525
0.423
0.374
0.346
0.332
0.321
0.319
0.313
0.311
0.757
0.534
0.345
0.280
0.251
0.235
0.226
0.221
0.220
0.219
0.218
0.949
0.849
0.657
0.539
0.475
0.434
0.410
0.393
0.391
0.382
0.381
-S22
−20.4
−33.4
−43.7
−46.7
−44.4
−49.7
−51.6
−54.1
−56.2
−60.0
−63.2
−32.9
−50.3
−50.3
−50.7
−51.3
−52.9
−55.1
−57.7
−60.2
−64.8
−68.3
−15.1
−26.9
−41.1
−47.6
−51.2
−54.5
−57.5
−60.7
−64.0
−67.8
−72.1
V
CE
= 5 V, I
C
= 7 mA, Z
O
= 50
W
V
CE
= 5 V, I
C
= 20 mA, Z
O
= 50
W
V
CE
= 2 V, I
C
= 3 mA, Z
O
= 50
W
ORDERING INFORMATION
Device
NSVF5488SKT3G
Marking
LN
Package
SOT−623 / SSFP
(Pb−Free / Halogen Free)
Shipping
8,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
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