NSVF5490SK
Product Preview
RF Transistor for Low Noise
Amplifier
20 V, 30 mA, f
T
= 8 GHz typ. RF Transistor
This RF transistor is designed for RF amplifier applications. SSFP
package is contribute to down size of application because it is small
surface mount package. This RF transistor is AEC−Q101 qualified and
PPAP capable for automotive applications.
Features
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3
1
2
•
•
•
•
Low−noise Use:
NF = 0.9 dB typ. (f = 1 GHz)
High Cut−off Frequency: f
T
= 8 GHz typ. (V
CE
= 5 V)
High Gain:
|S21e|
2
= 10 dB typ. (f = 1.5 GHz)
Low−voltage, Low−current Operation (V
CE
= 1 V, I
C
= 1 mA)
f
T
= 3.5 GHz typ.
|S21e|
2
= 5.5 dB typ. (f = 1.5 GHz)
•
SSFP Package is Pin−compatible with SOT−623
•
AEC−Q101 Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
SOT−623 / SSFP
CASE 631AC
ELECTRICAL CONNECTION NPN
3
1
1 : Base
2 : Emitter
3 : Collector
2
•
RF Amplifier for RKE
•
RF Amplifier for ADAS
•
RF Amplifier for Remote Engine Starter
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
MARKING DIAGRAM
LOT No.
LOT No.
MN
MN
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2018
June, 2018
−
Rev. P1
1
Publication Order Number:
NSVF5490SK/D
NSVF5490SK
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Dissipation
Operating Junction and Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj, Tstg
Value
20
10
1.5
30
100
−55
to +150
Unit
V
V
V
mA
mW
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS
at Ta = 25°C
Value
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain−Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Symbol
I
CBO
I
EBO
h
FE
f
T
1
f
T
2
Cob
Cre
| S21e |
2
1
| S21e |
2
2
NF1
NF2
V
CE
= 5 V, I
C
= 10 mA, f
=
1.5 GHz
V
CE
= 1 V, I
C
= 1 mA, f
=
1.5 GHz
V
CE
= 5 V, I
C
= 5 mA, f
=
1.5 GHz
V
CE
= 2 V, I
C
= 3 mA, f
=
1 GHz
8
Conditions
V
CB
= 10 V, I
E
= 0 A
V
EB
= 1 V, I
C
= 0 A
V
CE
= 5 V, I
C
= 10 mA
V
CE
= 5 V, I
C
= 10 mA
V
CE
= 1 V, I
C
= 1 mA
V
CB
= 10 V, f = 1 MHz
90
5
8
3.5
0.45
0.3
10
5.5
1.4
0.9
3.0
0.7
Min
Typ
Max
1.0
10
200
GHz
GHz
pF
pF
dB
dB
dB
dB
Unit
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pay attention to handling since it is liable to be affected by static electricity due to the high−frequency process adopted.
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NSVF5490SK
TYPICAL CHARACTERISTICS
hFE
−−
IC
Gain−Bandwidth Product, fT
−−
GHz
VCE=5V
5
3
2
2
fT
−−
IC
DC Current Gain, hFE
10
7
5
100
7
5
3
2
10
7
5
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
7
100
VCE =5V
VCE=1V
3
2
1.0
1.0
2
3
57
Collector Current, I C
−−
mA
Collector Current, I C
−−
mA
10
2
3
5
Figure 1.
Reverse Transfer Capacitance, Cre
−−
pF
5
Figure 2.
5
3
2
Cob
−−
VCB
f=1MHz
Cre
−−
VCB
f=1MHz
Output Capacitance, Cob
−−
pF
3
2
1.0
7
5
3
2
1.0
7
5
3
2
0.1
7
5
0.1
7
5
7 0.1
25 3
Collector−to−Base Voltage, VCB
−−V
73 1.0
2
5
7 10
25 3
7 0.1
25 3
Collector−to−Base Voltage, VCB
−−V
73 1.0
2
5
7 10
2
3
5
Figure 3.
12
Figure 4.
12
NF
−−
IC
f=1.5GHz
NF
−−
IC
VCE= 2V
f = 1GHz
10
Noise Figure, NF
−−
dB
10
8
Noise Figure, NF
−−
dB
5
8
6
6
5V
4
V =1V
CE
4
2
2
0
0.1
2
3
Collector Current, I C
−−
mA
5
7 1.0
23 3
57
10
2
0
0.1
23 3
57
Collector Current, I C
−−
mA
1.0
2 3
5
7 10
2
5
Figure 5.
Figure 6.
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NSVF5490SK
TYPICAL CHARACTERISTICS
|
S21e
|
2
−−
dB
14
12
10
8
6
4
2
0
−−
dB
16
−−
IC
f=1.5GHz
16
14
12
10
8
6
4
2
0
|
S21e
|
2
−−
IC
V CE=5V
2V
1V
f=1GHz
2
Forward Transfer Gain, |
S21e
|
33
5
7 1.0
25
Collector Current, I C
−−
mA
7 10
2
3
5
7 100
Forward Transfer Gain, |
S21e
|
2
V CE=5V
2V
1V
33
5
7 1.0
25
Collector Current, I C
−−
mA
7 10
2
3
5
7 100
Figure 7.
120
Figure 8.
PC
−−
Ta
Collector Dissipation, P C
−−
mW
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta
−−
_C
Figure 9.
S PARAMETERS (COMMON EMITTER)
Freq (MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
|S11|
0.782
0.623
0.502
0.420
0.369
0.339
0.311
0.296
0.285
0.277
-S11
−37.1
−65.4
−85.6
−102.4
−114.7
−127.2
−137.2
−144.9
−156.5
−164.2
|S21|
12.043
9.431
7.415
6.000
5.025
4.323
3.785
3.391
3.018
2.767
-S21
148.4
126.6
112.2
101.5
93.6
86.7
80.6
75.3
70.1
65.7
|S12|
0.038
0.057
0.072
0.083
0.094
0.105
0.115
0.127
0.139
0.150
-S12
69.7
60.8
56.5
55.2
55.1
55.6
55.6
56.7
56.4
56.7
|S22|
0.889
0.758
0.646
0.577
0.538
0.513
0.490
0.480
0.466
0.460
-S22
−19.5
−28.3
−33.3
−35.9
−37.6
−38.7
−39.7
−41.3
−43.5
−45.5
V
CE
= 5 V, I
C
= 5 mA, Z
O
= 50
W
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NSVF5490SK
S PARAMETERS (COMMON EMITTER)
Freq (MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
200
400
600
800
1000
1200
1400
1600
1800
2000
200
400
600
800
1000
1200
1400
1600
1800
2000
|S11|
0.641
0.468
0.377
0.321
0.293
0.280
0.266
0.263
0.263
0.264
0.851
0.724
0.612
0.521
0.461
0.423
0.382
0.366
0.341
0.333
0.945
0.892
0.826
0.754
0.691
0.639
0.589
0.558
0.522
0.490
-S11
−52.7
−85.4
−106.6
−124.1
−136.1
−146.7
−156.6
−163.2
−173.5
−179.8
−30.4
−55.7
−76.1
−93.0
−106.1
−118.6
−129.4
−138.0
−148.8
−157.7
−18.7
−36.9
−52.9
−67.9
−81.1
−94.3
−104.9
−114.1
−124.4
−134.9
|S21|
16.527
11.299
8.303
6.502
5.342
4.546
3.947
3.527
3.121
2.864
8.644
7.310
6.083
5.085
4.343
3.806
3.349
3.036
2.685
2.479
3.431
3.263
3.004
2.765
2.539
2.366
2.143
1.969
1.797
1.701
-S21
137.8
115.7
103.1
94.0
87.4
81.4
76.4
71.4
67.0
62.8
154.1
133.8
118.6
106.9
98.1
90.0
83.3
77.5
71.7
66.7
162.9
147.1
133.2
120.4
109.9
99.8
91.2
83.6
76.2
69.7
|S12|
0.031
0.048
0.060
0.072
0.084
0.097
0.108
0.123
0.136
0.150
0.042
0.073
0.093
0.107
0.118
0.128
0.137
0.147
0.157
0.167
0.053
0.099
0.136
0.164
0.184
0.199
0.207
0.213
0.218
0.219
-S12
67.4
60.5
60.0
60.9
61.9
62.7
63.0
63.7
62.8
62.4
73.0
61.3
54.2
50.4
48.3
47.5
46.9
47.4
47.2
47.6
78.1
66.9
57.5
49.7
43.4
38.4
34.1
31.7
28.7
27.0
|S22|
0.820
0.643
0.549
0.499
0.477
0.462
0.449
0.444
0.435
0.434
0.937
0.820
0.709
0.628
0.572
0.536
0.506
0.485
0.463
0.453
0.982
0.939
0.879
0.815
0.758
0.727
0.683
0.653
0.621
0.601
-S22
−22.9
−30.2
−32.2
−33.2
−33.9
−35.0
−36.2
−37.8
−39.9
−42.4
−16.4
−27.9
−35.7
−40.4
−43.7
−45.8
−47.3
−49.5
−51.9
−54.1
−10.3
−19.7
−27.7
−34.8
−40.0
−44.3
−47.8
−51.4
−54.9
−58.1
V
CE
= 5 V, I
C
= 10 mA, Z
O
= 50
W
V
CE
= 2 V, I
C
= 3 mA, Z
O
= 50
W
V
CE
= 1 V, I
C
= 1 mA, Z
O
= 50
W
ORDERING INFORMATION
Device
NSVF5490SKT3G
Marking
MN
Package
SOT−623 / SSFP
(Pb−Free / Halogen Free)
Shipping
†
8,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
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