Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
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2
NTR1P02L, NVTR01P02L
3.0
2.2 V
I
D
, DRAIN CURRENT (A)
2.5
2.0
1.5
1.0
1.6 V
0.5
0
0
1.4 V
1.2 V
4
1
2
3
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
5
1.8 V
V
GS
= 2.4 V to 3.0 V
T
J
= 25°C
2.0 V
I
D
, DRAIN CURRENT (A)
3
V
DS
≥
5 V
2
T
J
= 25°C
1
T
J
= 100°C
T
J
= −55°C
0
1.0
1.5
2.0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
2.5
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.30
I
D
= 1.0 A
T
J
= 25°C
0.25
0.30
T
J
= 25°C
0.25
V
GS
= 2.5 V
0.20
0.15
0.10
0.05
0
0.1 0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5 V
0.20
0.15
0.10
0
2
4
6
8
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.6
I
DSS
, LEAKAGE (nA)
1.4
1.2
1.0
0.8
0.6
0.4
−50
I
D
= 0.75 A
V
GS
= 4.5 V
1000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
100
T
J
= 125°C
T
J
= 100°C
10
1
0.1
T
J
= 25°C
0.01
−25
0
25
50
75
100
125
150
1
6
11
16
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTR1P02L, NVTR01P02L
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
400
V
GS
= 0 V
T
J
= 25°C
C, CAPACITANCE (pF)
300
C
iss
200
C
oss
100
C
rss
0
0
5
10
15
20
25
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
5
Q
T
4
3
Q
gs
2
V
DS
= 16 V
I
D
= 1.5 A
T
J
= 25°C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Q
gd
1
0
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1.0
I
S
, SOURCE CURRENT (A)
100
V
DD
= 48 V
I
D
= 9 A
V
GS
= 4.5 V
t, TIME (ns)
0.9
t
d(off)
t
f
t
r
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
GS
= 0 V
T
J
= 25°C
10
t
d(on)
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.5
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
1.0
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
10
100
ms
V
GS
= 12 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
1 ms
10 ms
dc
1
0.1
0.01
0.001
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NTR1P02L, NVTR01P02L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
HE
L
3X
b
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
T
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
e
TOP VIEW
L1
VIEW C
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
3X
0.90
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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