NUD3112
Integrated Relay,
Inductive Load Driver
This device is used to switch inductive loads such as relays,
solenoids incandescent lamps, and small DC motors without the need
of a free−wheeling diode. The device integrates all necessary items
such as the MOSFET switch, ESD protection, and Zener clamps. It
accepts logic level inputs thus allowing it to be driven by a large
variety of devices including logic gates, inverters, and
microcontrollers.
Features
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MARKING DIAGRAMS
3
1
2
SOT−23
CASE 318
STYLE 21
JW5 MG
G
•
Provides a Robust Driver Interface Between D.C. Relay Coil and
•
•
•
•
•
•
•
Sensitive Logic Circuits
Optimized to Switch Relays of 12 V Rail
Capable of Driving Relay Coils Rated up to 6.0 W at 12 V
Internal Zener Eliminates the Need of Free−Wheeling Diode
Internal Zener Clamp Routes Induced Current to Ground for Quieter
Systems Operation
Low V
DS(ON)
Reduces System Current Drain
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These are Pb−Free Devices
JW5 = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
6
1
SC−74
CASE 318F
STYLE 7
JW5 MG
G
Typical Applications
JW5 = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NUD3112LT1G
SZNUD3112LT1G
NUD3112DMT1G
SZNUD3112DMT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SC−74
(Pb−Free)
SC−74
(Pb−Free)
Shipping
†
3000 / Tape &
Reel
3000 / Tape &
Reel
3000 / Tape &
Reel
3000 / Tape &
Reel
•
Telecom: Line Cards, Modems, Answering Machines, FAX
•
Computers and Office: Photocopiers, Printers, Desktop Computers
•
Consumer: TVs and VCRs, Stereo Receivers, CD Players, Cassette
Recorders
•
Industrial: Small Appliances, Security Systems, Automated Test
Equipment, Garage Door Openers
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
INTERNAL CIRCUIT DIAGRAMS
Drain (3)
Drain (6)
Drain (3)
Gate (1)
1.0 k
300 k
Gate (2)
1.0 k
300 k
1.0 k
300 k
Gate (5)
Source (2)
Source (1)
Source (4)
CASE 318
CASE 318F
©
Semiconductor Components Industries, LLC, 2002
October, 2016
−
Rev. 11
1
Publication Order Number:
NUD3112/D
NUD3112
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise specified)
Symbol
V
DSS
V
GS
I
D
E
z
Drain to Source Voltage – Continuous
Gate to Source Voltage – Continuous
Drain Current – Continuous
Single Pulse Drain−to−Source Avalanche Energy (
T
Jinitial =
25°C)
Junction Temperature
Operating Ambient Temperature
Storage Temperature Range
Total Power Dissipation (Note 1)
Derating Above 25°C
Total Power Dissipation (Note 1)
Derating Above 25°C
Thermal Resistance Junction−to−Ambient (Note 1)
Human Body Model (HBM) According to EIA/JESD22/A114
SOT−23
SC−74
SOT−23
SC−74
Rating
Value
14
6
500
50
150
−40
to 85
−65
to +150
225
1.8
380
3.0
556
329
2000
Unit
V
dc
V
dc
mA
mJ
°C
°C
°C
mW
mW/°C
mW
mW/°C
°C/W
V
T
J
T
A
T
stg
P
D
P
D
R
qJA
ESD
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Mounted onto minimum pad board.
TYPICAL ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
OFF CHARACTERISTICS
V
BRDSS
B
VGSO
I
DSS
Drain to Source Sustaining Voltage (Internally Clamped)
(ID = 10 mA)
I
g
= 1.0 mA
Drain to Source Leakage Current
(V
DS
= 12 V , V
GS
= 0 V, T
A
= 25°C)
(V
DS
= 12 V, V
GS
= 0 V, T
A
= 85°C)
Gate Body Leakage Current
(V
GS
= 3.0 V, V
DS
= 0 V)
(V
GS
= 5.0 V, V
DS
= 0 V)
Gate Threshold Voltage
(V
GS
= V
DS
, I
D
= 1.0 mA)
(V
GS
= V
DS
, I
D
= 1.0 mA, T
A
= 85°C)
Drain to Source On−Resistance
(I
D
= 250 mA, V
GS
= 3.0 V)
(I
D
= 500 mA, V
GS
= 3.0 V)
(I
D
= 500 mA, V
GS
= 5.0 V)
(I
D
= 500 mA, V
GS
= 3.0 V, T
A
=85°C)
(I
D
= 500 mA, V
GS
= 5.0 V, T
A
=85°C)
Output Continuous Current
(V
DS
= 0.25 V, V
GS
= 3.0 V)
(V
DS
= 0.25 V, V
GS
= 3.0 V, T
A
= 85°C)
Forward Transconductance
(V
OUT
= 12.0 V, I
OUT
= 0.25 A)
14
−
−
−
−
−
16
−
−
−
−
−
17
8
20
40
35
65
V
V
mA
Characteristic
Min
Typ
Max
Unit
I
GSS
mA
ON CHARACTERISTICS
V
GS(th)
0.8
0.8
−
−
−
−
−
1.2
−
−
−
−
−
−
1.4
1.4
1.2
1.3
0.9
1.3
0.9
V
R
DS(on)
W
I
DS(on)
300
200
350
400
−
490
−
−
−
mA
mmhos
g
FS
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2
NUD3112
TYPICAL ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
(V
DS
= 12 V, V
GS
= 0 V, f = 10 kHz)
Output Capacitance
(V
DS
= 12 V, V
GS
= 0 V, f = 10 kHz)
Transfer Capacitance
(V
DS
= 12.0 V, V
GS
= 0 V, f = 10 kHz)
−
−
−
23
30
7
−
−
−
pF
pF
pF
Characteristic
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
Symbol
t
PHL
t
PLH
t
f
t
r
Characteristic
Propagation Delay Times:
High to Low Propagation Delay; Figure 1 (V
DS
= 12 V, V
GS
= 5.0 V)
Low to High Propagation Delay; Figure 1 (V
DS
= 12 V, V
GS
= 5.0 V)
Transition Times:
Fall Time; Figure 1 (V
DS
= 12 V, V
GS
= 5.0 V)
Rise Time; Figure 1 (V
DS
= 12 V, V
GS
= 5.0 V)
Min
−
−
−
−
Typ
21
91
36
61
Max
−
−
nS
−
−
Units
nS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
V
IH
V
in
50%
0V
t
PHL
90%
V
out
50%
10%
V
OL
t
r
t
PLH
V
OH
t
f
Figure 1. Switching Waveforms
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NUD3112
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise specified)
1
I D, DRAIN CURRENT (A)
0.1
V
GS
= 5.0 V
I D, DRAIN CURRENT (A)
V
GS
= 3.0 V
V
GS
= 2.0 V
V
GS
= 1.5 V
1
0.1
V
DS
= 0.8 V
0.01
0.01
0.001
125°C
85°C
25°C
−40°C
1.0
1.5
2.0 2.5 3.0 3.5
4.0 4.5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
5.0
0.001
V
GS
= 1.0 V
0.0001
0.00001
0.0
0.0001
0.00001
0.8
0.5
0.1
0.2
0.3
0.4
0.5
0.6
0.7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 2. Output Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
1200
1000
800
600
400
200
0
−50
I
D
= 0.25 A
V
GS
= 3.0 V
I
D
= 0.5 A
V
GS
= 3.0 V
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0.6
125°C
Figure 3. Transfer Function
I
D
= 250
mA
I
D
= 0.5 A
V
GS
= 5.0 V
85°C
25°C
−40°C
−25
0
25
75
50
TEMPERATURE (°C)
100
125
0.8
1
1.2
1.4
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1.6
Figure 4. On−Resistance Variation vs.
Temperature
15.98
V Z , ZENER VOLTAGE (V)
15.96
15.94
15.92
15.90
15.88
15.86
15.84
15.82
15.80
−50
−25
0
50
75
25
TEMPERATURE (°C)
100
125
V Z , ZENER CLAMP VOLTAGE (V)
I
Z
= 10 mA
21
20
19
18
17
16
15
14
Figure 5. R
DS(ON)
Variation vs. Gate−to−Source
Voltage
85°C
25°C
−40°C
1
10
100
I
Z
, ZENER CURRENT (mA)
1000
13
0.1
Figure 6. Zener Voltage vs. Temperature
Figure 7. Zener Clamp Voltage vs. Zener
Current
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NUD3112
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise specified)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
I
D
, DRAIN CURRENT (A)
25°C
−40°C
45
40
I
GSS
, GATE LEAKAGE (mA)
35
30
25
20
15
10
5
0
−50
−25
0
25
50
75
TEMPERATURE (°C)
100
125
V
GS
= 3.0 V
V
GS
= 5.0 V
V
GS
= 3.0 V
125°C
85°C
Figure 8. On−Resistance vs. Drain Current and
Temperature
Figure 9. Gate Leakage vs. Temperature
+12V
Relay
+5V / 3.3V
clamp Zener
clamp Zener
Logic
1.0 k
ESD Zener
300 k
ESD Zener
Figure 10. Typical Application Circuit
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