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NX6504SJ-A

Laser Diode, 1550nm, CAN PACKAGE-4

器件类别:光电子/LED    光电   

厂商名称:NEC(日电)

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
NEC(日电)
包装说明
CAN PACKAGE-4
Reach Compliance Code
compliant
配置
SINGLE WITH BUILT-IN PHOTO DIODE
JESD-609代码
e6
功能数量
1
光电设备类型
LASER DIODE
标称输出功率
10 mW
峰值波长
1550 nm
形状
ROUND
尺寸
1.6 mm
端子面层
Tin/Bismuth (Sn/Bi)
最大阈值电流
25 mA
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DATA SHEET
LASER DIODE
NX6504 Series
1 550 nm FOR 156 Mb/s, 622 Mb/s
InGaAsP MQW-DFB LASER DIODE
DESCRIPTION
The NX6504 Series is a 1 550 nm Multiple Quantum Well (MQW) structured
Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This
device is ideal for Synchronous Digital Hierarchy (SDH) system, STM-1,
STM-4, ITU-T recommendations.
NX6504S Series
FEATURES
• Optical output power
• Low threshold current
• High speed
• SMSR
• InGaAs monitor PIN-PD
• CAN package
• Based on Telcordia reliability
P
o
= 5.0 mW
l
th
= 12 mA
t
r
, t
f
= 0.5 ns MAX.
45 dB
• Wide operating temperature range T
C
=
−10
to +85°C
φ
5.6 mm
NX6504G Series
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PL10069EJ02V0DS (2nd edition)
Date Published November 2002 CP(K)
Printed in Japan
The mark
shows major revised points.
©
NEC Compound Semiconductor Devices 2002
NX6504 Series
PACKAGE DIMENSIONS (UNIT: mm)
NX6504S Series
5.6
+0.00
–0.03
4.2±0.1
3.55±0.05
1.0±0.1
2
0.3
+0.1
–0.0
110˚±2˚
BOTTOM VIEW
1
4
3
PIN CONNECTIONS
NX6504SH
0.25±0.03
(GLASS)
0.3
+0.1
–0.0
1.6±0.1
0.25
0.33
NX6504SI
1 (CASE)
LD
4
2
PD
4
1 (CASE)
LD
2
PD
3
1.0 MIN.
*1
15.0±1.0 1.2±0.1 2.1±0.15
LD CHIP
1.27±0.05
REFERENCE
PLANE
3
NX6504SJ
1 (CASE)
LD
4
2
2
PD
3
NX6504SK
1 (CASE)
LD
4
PD
3
4– 0.45
2.0
P.C.D
*1
n = 1.48 Bolosilicate Glass
NX6504G Series
5.6
+0.00
–0.03
4.3±0.1
3.75±0.05
BOTTOM VIEW
1.0±0.1
2
1
4
3
110˚±2˚
0.3
+0.1
–0.0
PIN CONNECTIONS
Focal Point
0.3
+0.1
–0.0
NX6504GH
1 (CASE)
LD
2
PD
3
4
2
NX6504GI
1 (CASE)
LD
4
PD
3
15.0±1.0 1.2±0.1 3.97±0.1
8.6±1.0
NX6504GJ
1 (CASE)
4– 0.45
2
2.0
P.C.D
PD
3
LD
4
2
NX6504GK
1 (CASE)
LD
4
PD
3
2
Data Sheet PL10069EJ02V0DS
NX6504 Series
ORDERING INFORMATION
NX6504S Series
Part Number
NX6504SH
Package
4-pin CAN with flat glass cap
2
PD
3
1
LD
2
PD
3
1
LD
4
2
PD
3
Pin Connections
1
LD
4
NX6504SI
4
NX6504SJ
NX6504SK
2
PD
1
LD
4
3
NX6504G Series
Part Number
NX6504GH
Package
4-pin CAN with aspherical lens cap
2
PD
3
1
LD
2
PD
3
1
LD
4
2
PD
3
Pin Connections
1
LD
4
NX6504GI
4
NX6504GJ
NX6504GK
2
PD
1
LD
4
3
Data Sheet PL10069EJ02V0DS
3
NX6504 Series
ABSOLUTE MAXIMUM RATINGS
Parameter
Optical Output Power
Forward Current of LD
Reverse Voltage of LD
Forward Current of PD
Reverse Voltage of PD
Operating Case Temperature
Storage Temperature
Lead Soldering Temperature
Relative Humidity (noncondensing)
Symbol
P
o
I
F
V
R
I
F
V
R
T
C
T
stg
T
sld
RH
Ratings
10
150
2.0
10
20
−10
to +85
−40
to +85
350 (3 sec.)
85
Unit
mW
mA
V
mA
V
°C
°C
°C
%
ELECTRO-OPTICAL CHARACTERISTICS (T
C
= 25°C, unless otherwise specified)
°
Parameter
Operating Voltage
Threshold Current
Symbol
V
op
I
th
T
C
= 85°C
Threshold Output Power
Differential Efficiency
Temperature Dependence of
Differential Efficiency
Peak Emission Wavelength
P
th
T
C
=
−10
to +85°C, I
F
= I
th
0.15
0.25
−1.5
Conditions
P
o
= 5.0 mW, T
C
=
−10
to +85°C
MIN.
TYP.
1.0
12
35
MAX.
1.5
25
50
200
Unit
V
mA
µ
W
W/A
dB
η
d
∆η
d
λ
p
∆η
d
= 10 log
η
d
(@ 85°C)
η
d
(@ 25°C)
−3.0
P
o
= 5.0 mW, RMS (−20 dB)
T
C
=
−10
to +85°C
P
o
= 5.0 mW, T
C
=
−10
to +85°C
P
o
= 5.0 mW, FAHM
P
o
= 5.0 mW, FAHM
10-90%
90-10%
V
R
= 5 V, P
o
= 5.0 mW
V
R
= 5 V
V
R
= 5 V, T
C
=
−10
to +85°C
*2
1 530
1 570
nm
Side Mode Suppression Ratio
Vertical Beam Angle
Lateral Beam Angle
Rise Time
Fall Time
Monitor Current
Monitor Dark Current
*1
SMSR
30
45
30
25
0.05
0.2
40
35
0.5
0.5
1 000
10
500
6
20
1.0
dB
deg.
deg.
ns
ns
θ
θ
//
t
r
t
f
I
m
I
D
*1
*2
200
600
0.1
µ
A
nA
Monitor PD Terminal Capacitance
Tracking Error
*3
C
t
γ
V
R
= 5 V, f = 1 MHz
I
m
= const. (@ P
o
= 5.0 mW, T
C
= 25°C)
T
C
=
−10
to +85°C
−1.0
pF
dB
*1
Applicable to only NX6504S Series
*2
FAHM: Full Angle at Half Maximum
4
Data Sheet PL10069EJ02V0DS
NX6504 Series
*3
Tracking Error:
γ
P
o
(mW)
T
C
= 25˚C
5.0
T
C
= –10 to +85˚C
P
o
γ
= 10 log
P
o
5.0
[dB]
0
I
m
I
m
(mA)
Data Sheet PL10069EJ02V0DS
5
查看更多>
参数对比
与NX6504SJ-A相近的元器件有:NX6504GI-A、NX6504GJ、NX6504SI、NX6504SJ、NX6504GI。描述及对比如下:
型号 NX6504SJ-A NX6504GI-A NX6504GJ NX6504SI NX6504SJ NX6504GI
描述 Laser Diode, 1550nm, CAN PACKAGE-4 Laser Diode, 1550nm, CAN PACKAGE-4 Laser Diode, 1550nm, CAN PACKAGE-4 Laser Diode, 1550nm, CAN PACKAGE-4 Laser Diode, 1550nm, CAN PACKAGE-4 Laser Diode, 1550nm, CAN PACKAGE-4
是否Rohs认证 符合 符合 不符合 不符合 不符合 不符合
厂商名称 NEC(日电) NEC(日电) NEC(日电) NEC(日电) NEC(日电) NEC(日电)
包装说明 CAN PACKAGE-4 CAN PACKAGE-4 CAN PACKAGE-4 CAN PACKAGE-4 CAN PACKAGE-4 CAN PACKAGE-4
Reach Compliance Code compliant compliant compliant compliant compliant compliant
配置 SINGLE WITH BUILT-IN PHOTO DIODE SINGLE WITH BUILT-IN PHOTO DIODE SINGLE WITH BUILT-IN PHOTO DIODE SINGLE WITH BUILT-IN PHOTO DIODE SINGLE WITH BUILT-IN PHOTO DIODE SINGLE WITH BUILT-IN PHOTO DIODE
JESD-609代码 e6 e6 e0 e0 e0 e0
功能数量 1 1 1 1 1 1
光电设备类型 LASER DIODE LASER DIODE LASER DIODE LASER DIODE LASER DIODE LASER DIODE
标称输出功率 10 mW 10 mW 10 mW 10 mW 10 mW 10 mW
峰值波长 1550 nm 1550 nm 1550 nm 1550 nm 1550 nm 1550 nm
形状 ROUND ROUND ROUND ROUND ROUND ROUND
端子面层 Tin/Bismuth (Sn/Bi) Tin/Bismuth (Sn/Bi) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
最大阈值电流 25 mA 25 mA 25 mA 25 mA 25 mA 25 mA
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