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NX8503CG

NECs 1550 nm InGaAsP MQW DFB LASER DIODE

厂商名称:NEC ( Renesas )

厂商官网:https://www2.renesas.cn/zh-cn/

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NEC's 1550 nm
InGaAsP MQW DFB LASER DIODE
NX8503BG-CC
IN COAXIAL PACKAGE
NX8503CG-CC
FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
FEATURES
PEAK EMISSION WAVELENGTH:
λ
P
= 1550 nm
OPTICAL OUTPUT POWER:
P
f
= 2.0 mW
LOW THRESHOLD CURRENT:
I
TH
= 15 mA @ T
C
= 25°C
InGaAs MONITOR PIN-PD
WIDE OPERATING TEMPERATURE RANGE:
T
C
= -10 to +85°C
• WITH SC-UPC CONNECTOR
• BASED ON TELCORDIA RELIABILITY
The module is ideal as a light source for Synchronous Digital
Hierarchy (SDH) system, STM-1, log-haul L-1.2, L-1.3 and
STM-4, long-haul L-4.2, L-4.3 ITU-T recommendations.
DESCRIPTION
NEC's NX8503BG-CC and NX8503CG-CC are 1550 nm Co-
axial Module DFB (Distributed Feed-Back) laser diode with
single mode fiber. Multiple Quantum Well (MQW) structure is
adopted to achieve stable dynamic single longitudinal mode
operation over a wide temperature range of -10 to +85°C.
ELECTRO-OPTICAL CHARACTERISTICS
(T
C
= -10 to +85°C, unless otherwise specified)
PART NUMBER
SYMBOLS
P
f
V
OP
I
TH
P
TH
I
MOD
PARAMETERS AND CONDITIONS
Optical Output Power from Fiber, CW
Operating Voltage, P
f
= 2.0 mW
Threshold Current
Threshold Output Power, I
F
= I
TH
Modulation Current
Differential Efficiency
P
f
= 2.0 mW, T
C
= 25°C
P
f
= 2.0 mW
T
C
= +25°C
UNITS
mW
V
mA
mA
µW
mA
mA
W/A
W/A
dB
15
13
0.050
0.030
-3
25
0.080
-1.6
2
MIN
NX8300BG-CC, NX8300CG-CC
TYP
2.0
1.1
15
1.6
25
50
100
40
60
0.130
0.150
MAX
η
d
η
d
P
f
= 2.0 mW, T
C
= 25°C
P
f
= 2.0 mW
Temperature Dependence of Differential Efficiency,
η
d
(@ T
C
°C)
η
d
= 10 log
η
d
(@ 25 °C)
Kink, P
f
= Up to 2.4 mW (Refer to defenitions)
Peak Emission Wavelength, P
f
= 2.0 mW
Temperature Dependence of Peak Emission Wavelength
Spectral Width, P
f
= 2.0 mW, -20 dB down width
Side Mode Suppression Ratio, P
f
= 2.0 mW
Cut-off Frequency, -3 dB, V
R
= 5 V, P
f
= 2.0 mW
Rise Time, 10 to 90%, P
pk
= 2.0 mW, I
F
= I
TH
Fall Time, 90 to 10%, P
pk
= 2.0 mW, I
F
= I
TH
Monitor Current, V
R
= 5 V, P
f
= 2.0 mW
Monitor Dark Current
V
R
= 5 V, T
C
= 25
°C
V
R
= 5 V
Kink
λ
p
∆λ/∆T
∆λ
SMSR
f
c
t
r
t
f
I
m
I
D
%
nm
nm/°C
nm
dB
GHz
ns
ns
µA
nA
nA
200
1000
1.0
10
30
1530
1550
0.1
0.3
40
2.0
±20
1570
0.12
1.0
0.5
0.5
2000
50
500
continued next page
California Eastern Laboratories
NX8503BG-CC, NX8503CG-CC
ELECTRO-OPTICAL CHARACTERISTICS
cont.
(T
C
= -10 to +85°C, unless otherwise specified)
PART NUMBER
SYMBOLS
C
t
LIN
m
γ
RIN
PARAMETERS AND CONDITIONS
Monitor PD Terminal Capacitance, V
R
= 5 V, f = 1 MHz
Linearity, V
R
= 5 V, P
f
= 0.2 to 2.0 mW (Refer to defenitions)
Tracking Error, I
m
= const. (Refer to defenitions)
Relative Intensity Noise, Ref = -14dB
UNITS
pF
%
dB
dB/Hz
0.5
-135
MIN
NX8503BG-CC, NX8503BG-CC
TYP
1.0
MAX
20
10
1.0
ABSOLUTE MAXIMUM RATINGS
1
(T
C
= -20 to +85°C, unless otherwise specified)
SYMBOLS
I
F
P
f
V
R
I
F
V
R
T
C
T
STG
T
SLD
RH
PARAMETERS
Forward Current of LD
Optical Output Power
from Fiber
Reverse Voltage of LD
Forward Current of PD
Reverse Voltage of PD
Operating Case Temperature
Storage Temperature
Lead Soldering
Temperature (10 s)
Relative Humidity
(non-condensing)
UNITS
mA
mW
V
mA
V
°C
°C
°C
%
RATINGS
150
5.0
2.0
2.0
15
-10 to +85
-40 to +85
260
85
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
NX8503BG-CC, NX8503CG-CC
PARAMETER DEFINITIONS
Kink : kink
(mW)
2.4
dP
o
P
K
dP
K
I
F -
η
d
P
f
I
F
- P
f
kink =
x 100 [%]
P
K
dP
K
= dPo MAX
P
K
2.4 (mW)
|
dP
K
|
0
(mA)
I
F
Linearity : LIN
m
P
f
(mW)
2.0
LINm =
P
K
|dP
L
|
x 100 [%]
P
L
PL
dP
L
dP
o
0.2
0
I
m
(mA)
dP
L
= dPo MAX
0.2 < P
L
< 2.0 (mW)
Tracking Error :
γ
P
f
(mW)
T
C
= 25°C
2.0
T
C
= -10 to +85C
P
f
γ
=
|
10 log
P
f
2.0
|
[dB]
0
I
m
I
m
(mA)
TYPICAL CHARACTERISTICS
(TC = 25 ºC, Unless otherwise specified)
OPTICAL OUTPUT POWER vs.
FORWARD CURRENT
3.0
OPTICAL OUTPUT POWER vs.
MONITOR CURRENT
3.0
T
C
= –10 ºC
+25 ºC
ºC
ºC
ºC
Optical Output Power P
I
(mW)
+25
+85
2.0
Optical Output Power P
I
(mW)
T
C
=
-10
2.0
+85 ºC
1.0
1.0
0
20
40
60
80
100
0.0
0.4
0.8
1.2
Forward Current I
F
(mA)
Monitor Current I
F
(mA)
NX8503BG-CC, NX8503CG-CC
TYPICAL CHARACTERISTICS
(TC = 25 ºC, Unless otherwise specified)
OPERATING CURRENT AND THRESHOLD CURRENT
vs. CASE TEMPERATURE
100
I
op
@ P
r
= 2 mW
50
FORWARD CURRENT vs.
FORWARD VOLTAGE
Operating Current I
op
(mA)
Threshold Curent I
th
(mA)
Forward Current I
F
(mA)
0
20
40
60
80
100
40
10
I
th
30
20
10
1
-40
-20
0
0.5
1.0
1.5
2.0
2.5
Case Temperature T
c
(ºC)
Forward Voltage V
F
(V)
TEMPERATURE DEPENEDENCE OF
DIFFERNTIAL EFFICIENCY
0.18
TEMPERATURE DEPENEDENCE OF
PEAK EMISSION WAVELENGHT
1565
Peak Emission Wavelenght
η
p
(nm)
-20
0
20
40
80
100
Differemtial Effieciency
η
d
(W/A)
1560
0.12
1555
0.06
1550
0.00
-40
60
1545
-40
-20
0
20
40
60
80
100
Case Temperature Tc (ºC)
Case Temperature Tc (ºC)
SPECTRUM
10
0
Relative Intensity (dB)
-10
-20
-30
-40
-50
-60
-70
1545.0
1555.0
1565.0
Wavelength
λ
(nm)
REMARK
The graphs indicate nominal charachteristics.
NX8503BG-CC, NX8503CG-CC
OUTLINE DIMENSIONS
(Units in mm)
NX8503BG-CC
Optical Fiber (SMF)
Length: 0.5 m
With SC Connector
ø7.0±0.2
ø0.9
Optical Fiber (SMF)
Length: 0.5 m
With SC Connector
6.0
18.3±1.0
8.0±0.3
3.2
4.0±0.2 2.2
ø2.2
1.2±0.2
ø0.45±0.05
20.0±1.0
12.7±0.2
17.0±0.2
16.0
25.5±1.0
8.0±0.3
0.5±0.3
NX8503CG-CC
ø0.9
ø7.0±0.2
6.0
15.0
28.3±1.0
7.3
0.5
ø0.45±0.05
19.5±1.0
PIN CONNECTIONS
P.C.D. = ø2.0
PD
4
3
2
LD
CASE
PIN CONNECTIONS
P.C.D. = ø2.0
4–R1.25±0.2
2
3
2–ø2.5
4
1
7.0±0.2
3
1.0±0.1
7.2±0.3
3.7±0.3
PD
2
1
1
CASE
4
LD
8.5±0.2
12.0±0.15
OPTICAL FIBER CHARACTERISTICS
PARAMETER
Mode Field Doameter
Cladding Diameter
Maximum Cladding Noncircularity
Maximum Core/Cladding Concentricity
Outer Diameter
Cut-off Wavelength
Minimum Fiber Bending Radius
Fiber Length
Flammability
SPEC
9.5±1
125±2
2
1.6
0.9±0.1
1100 to 1270
30
500±50 MIN
UL1581 VW-1
UNIT
µm
µm
%
%
mm
nm
mm
mm
ORDERING INFORMATION
PART NUMBER AVAILABLE CONNECTOR FLANGE TYPE
NX8503BG-CC
With SC-UPC Connector Flat Mount Flange
Vertical Mount
NX8503CG-CC
Flange
35±2 mm
8.99±0.5 mm
SC-UPC Connector
Fiber Length: 500±50 mm
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected
to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify
CEL for all damages resulting from such improper use or sale.
03/03/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
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参数对比
与NX8503CG相近的元器件有:NX8503BG、NX8503BG-CC、NX8503CG-CC。描述及对比如下:
型号 NX8503CG NX8503BG NX8503BG-CC NX8503CG-CC
描述 NECs 1550 nm InGaAsP MQW DFB LASER DIODE NECs 1550 nm InGaAsP MQW DFB LASER DIODE NECs 1550 nm InGaAsP MQW DFB LASER DIODE NECs 1550 nm InGaAsP MQW DFB LASER DIODE
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