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© Nexperia B.V. (year). All rights reserved.
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NZH series
Single Zener diodes
Rev. 01 — 27 January 2010
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted
Device (SMD) plastic package.
1.2 Features
Total power dissipation:
≤
500 mW
Wide working voltage range
Small plastic package suitable for
surface-mounted design
Low differential resistance
1.3 Applications
General regulation functions
1.4 Quick reference data
Table 1.
Symbol
V
F
P
tot
Quick reference data
Parameter
forward voltage
total power dissipation
Conditions
I
F
= 10 mA
T
amb
≤
25
°C
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
0.9
500
1
Unit
V
mW
W
[1]
[2]
[3]
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
NXP Semiconductors
NZH series
Single Zener diodes
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
1
2
006aaa152
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
NZH3V0B to
NZH30C
[1]
[1]
Type number
Description
plastic surface-mounted package; 2 leads
Version
SOD123F
-
The series consists of 25 types with nominal working voltages from 3.0 V to 30 V.
4. Marking
Table 4.
NZH3V0B
NZH3V3A
NZH3V6B
NZH3V9B
NZH4V3B
NZH4V7B
NZH5V1B
NZH5V6B
NZH6V2B
NZH6V8B
NZH7V5C
NZH8V2B
NZH9V1B
Marking codes
Marking code
CH
CJ
CK
CL
CM
CN
CP
CQ
CR
CS
CT
CU
CV
Type number
NZH10C
NZH11C
NZH12B
NZH13B
NZH15B
NZH16C
NZH18C
NZH20C
NZH22C
NZH24C
NZH27C
NZH30C
-
Marking code
CW
CX
CY
D9
D1
D2
D3
D4
D5
D6
D7
DA
-
Type number
NZH_SER_1
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 27 January 2010
2 of 9
NXP Semiconductors
NZH series
Single Zener diodes
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
F
P
tot
T
j
T
amb
T
stg
[1]
[2]
Parameter
forward current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
T
amb
≤
25
°C
[1]
[2]
Min
-
-
-
-
−55
−65
Max
250
500
1
150
+150
+150
Unit
mA
mW
W
°C
°C
°C
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
[2]
[3]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
250
125
70
Unit
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of cathode tab.
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
[1]
Parameter
forward voltage
Conditions
I
F
= 10 mA
[1]
Min
-
Typ
-
Max
0.9
Unit
V
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
Table 8.
Characteristics per type; NZH3V0B to NZH10C
T
j
= 25
°
C unless otherwise specified.
NZHxxx
Working voltage
V
Z
(V);
I
Z
= 20 mA
Min
3V0B
3V3A
3V6B
3V9B
2.85
3.16
3.42
3.71
Max
3.15
3.38
3.78
4.10
Maximum differential
resistance
r
dif
(Ω)
I
Z
= 1 mA
1000
1000
1000
1000
80
70
60
50
Reverse current
I
R
(μA)
V
R
(V)
1
1
1
1
Diode
capacitance
C
d
(pF)
[1]
Max
450
450
450
450
I
Z
= 20 mA Max
50
20
5
5
NZH_SER_1
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 27 January 2010
3 of 9
NXP Semiconductors
NZH series
Single Zener diodes
Table 8.
Characteristics per type; NZH3V0B to NZH10C
…continued
T
j
= 25
°
C unless otherwise specified.
NZHxxx
Working voltage
V
Z
(V);
I
Z
= 20 mA
Min
4V3B
4V7B
5V1B
5V6B
6V2B
6V8B
7V5C
8V2B
9V1B
10C
[1]
Maximum differential
resistance
r
dif
(Ω)
I
Z
= 1 mA
1000
900
800
500
300
150
120
120
120
120
40
25
20
13
10
8
8
8
8
8
Reverse current
I
R
(μA)
V
R
(V)
1
1
1.5
2.5
3
3.5
4
5
6
7
Diode
capacitance
C
d
(pF)
[1]
Max
450
300
300
300
200
200
150
150
150
90
Max
4.43
4.80
5.20
5.73
6.27
6.83
7.67
8.36
9.23
10.20
I
Z
= 20 mA Max
5
5
5
5
5
2
0.5
0.5
0.5
0.2
4.17
4.55
4.94
5.45
5.96
6.49
7.29
8.02
8.85
9.70
f = 1 MHz; V
R
= 0 V
Table 9.
Characteristics per type; NZH11C to NZH20C
T
j
= 25
°
C unless otherwise specified.
NZHxxx
Working voltage
V
Z
(V);
I
Z
= 10 mA
Min
11C
12B
13B
15B
16C
18C
20C
[1]
Maximum differential
resistance
r
dif
(Ω)
I
Z
= 1 mA
120
110
110
110
150
150
200
10
12
14
16
18
23
28
Reverse current
I
R
(μA)
V
R
(V)
8
9
10
11
12
13
15
Diode
capacitance
C
d
(pF)
[1]
Max
85
85
80
75
75
70
60
Max
11.38
12.03
13.65
15.75
16.51
18.33
20.22
I
Z
= 10 mA Max
0.04
0.04
0.04
0.04
0.04
0.04
0.04
10.82
11.44
12.35
14.25
15.69
17.42
19.23
f = 1 MHz; V
R
= 0 V
Table 10. Characteristics per type; NZH22C to NZH30C
T
j
= 25
°
C unless otherwise specified.
NZHxxx
Working voltage
V
Z
(V);
I
Z
= 5 mA
Min
22C
24C
27C
30C
[1]
Maximum differential
resistance
r
dif
(Ω)
I
Z
= 1 mA
200
200
250
250
I
Z
= 5 mA
30
35
45
55
Reverse current
I
R
(μA)
Max
0.04
0.04
0.04
0.04
V
R
(V)
17
19
21
23
Diode
capacitance
C
d
(pF)
[1]
Max
60
55
50
50
Max
22.17
24.31
26.95
31.50
21.08
23.12
25.63
28.50
f = 1 MHz; V
R
= 0 V
NZH_SER_1
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 27 January 2010
4 of 9
