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OPB847TX

Photo Gap Detector

厂商名称:OPTEK(TT Electronics)

厂商官网:http://www.ttelectronics.com/optek-technology

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Product Bulletin OPB847TX/TXV
September 1996
Hi-Rel Slotted Optical Switches
Types OPB847TX, OPB847TXV, OPB848TX, OPB848TXV
Features
Non-contact switching
Apertured for high resolution
Hermetically sealed components
Components processed to Optek’
s
screening program patterned after
MIL-PRF-19500 for TX and TXV
devices
Absolute Maximum Ratings
(T
A
= 25
o
C unless otherwise noted)
Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +125
o
C
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Lead Soldering Temperature [1/16 inch (1.6 mm) from case 5 sec. with soldering
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240
o
C
Input Diode
Forward DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(2)
Output Phototransistor
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V
Emitter-Collector Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0 V
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(2)
Notes:
(1) Duration can be extended to 10 sec. max. when flow soldering.
(2) Derate linearly 1.00 mW/
o
C above 25
o
C.
(3) Methanol and isopropanol are recommended as cleaning agents.
Description
The OPB847TX, OPB847TXV,
OPB848TX, and OPB848TXV each
consist of a gallium aluminum arsenide
LED and a silicon phototransistor
soldered into a printed circuit board then
mounted in a high temperature plastic
housing on opposite sides of a 0.100
inch (2.54 mm) wide slot.
Phototransistor switching takes place
whenever an opaque object passes
through the slot. Both device types have
a 0.025 inch (0.635 mm) by 0.06 (1.52
mm) aperture in front of the
phototransistor for high resolution
positioning sensing.
The OPB847TX, OPB847TXV,
OPB848TX, and OPB848TXV use
optoelectronic components that have
been processed and tested as either TX
or TXV components per MIL-PRF-19500.
Typical screening and lot acceptance
tests are provided on page 13-4.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
13-40
(972) 323-2200
Fax (972) 323-2396
Types OPB847TX, OPB847TXV, OPB848TX, OPB848TXV
Electrical Characteristics
(T
A
= 25
o
C unless otherwise noted)
Symbol
Input Diode
Forward Voltage
(4)
V
F
1.00
1.20
0.80
I
R
Reverse Current
1.35
1.55
1.20
0.1
1.70
1.90
1.60
100
V
V
V
µA
I
F
= 20.0 mA
I
F
= 20.0 mA, T
A
= -55
o
C
I
F
= 20.0 mA, T
A
= 100
o
C
V
R
= 2.0 V
Parameter
Min
Typ
Max Units
Test Conditions
Output Phototransistor
V
(BR)CEO
V
(BR)ECO
I
C(off)
10
100
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
50
7.0
110
10.0
0.2
100
V
V
nA
µA
I
C
= 1.0 mA, I
F
= 0
I
E
= 100
µA,
I
F
= 0
V
CE
= 10.0 V, I
F
= 0
V
CE
= 10.0 V, I
F
= 0, T
A
= 100
o
C
Coupled
On-State Collector Current
(4)
OPB847
OPB847
OPB847
I
C(on)
OPB848
OPB848
OPB848
V
CE(SAT)
Collector-Emitter Saturation
Voltage
Output Rise Time
t
r
OPB848
Output Fall Time
t
f
OPB848
8.0
15.0
OPB847
8.0
12.0
15.0
20.0
OPB847
OPB848
OPB847
4.0
2.5
2.5
1.0
0.6
0.6
0.20
0.20
12.0
0.30
0.30
20.0
mA
mA
mA
mA
mA
mA
V
V
µs
µs
µs
µs
V
CC
= 10.0 V, I
F
= 20.0 mA,
R
L
= 1,000
V
CE
= 10.0 V, I
F
= 20.0 mA
V
CE
= 10.0 V, I
F
= 20.0 mA, T
A
= -55
o
C
V
CE
= 10.0 V, I
F
= 20.0 mA, T
A
= 100
o
C
V
CE
= 10.0 V, I
F
= 20.0 mA
V
CE
= 10.0 V, I
F
= 20.0 mA, T
A
= -55
o
C
V
CE
= 10.0 V, I
F
= 20.0 mA, T
A
= 100
o
C
I
C
= 2.0 mA, I
F
= 20.0 mA
I
C
= 500
µA,
I
F
= 20.0 mA
(4) Measurement is taken during the last 500
µs
of a single 1.0 ms test pulse. Heating due to increased pulse rate or pulse width can cause
change in measurement results.
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
(972)323-2200
Fax (972)323-2396
13-41
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参数对比
与OPB847TX相近的元器件有:OPB847TXV、OPB848TX、OPB848TXV。描述及对比如下:
型号 OPB847TX OPB847TXV OPB848TX OPB848TXV
描述 Photo Gap Detector Photo Gap Detector SENS OPTO SLOT 2.54MM TRANS THRU SENS OPTO SLOT 2.54MM TRANS THRU
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