Infrared Light Emitting Diode
OPR2800, OPR2800T
Features:
•
•
•
•
•
High-power GaAIAs
Matches PLCC-2 footprint
875 nm wavelength
Wide beam angle
Wide operating temperature range (
-55
o
C to +100
o
C)
Description:
The
OPR2800
is a GaAIAs infrared LED mounted in a surface mount chip carrier (SMCC) package with a flat lens
window that allows a wide beam angle. The SMCC format has a lower height profile than the PLCC-2 package
and mounts in the same footprint. The device is suitable for use in single device or array applications. The
OPR2800 is spectrally matched to the OPR5500 phototransistor.
See Application Bulletin 237 for handling instructions.
Applications:
•
•
Non-contact position sensing
Datum detection
Ordering Information
•
•
Machine automation
Optical encoding
Part
Number
OPR2800
OPR2800T
LED Peak
Total
Wavelength Beam Angle
875 nm
100°
Packaging
Waffle Pack
Tape & Reel
Warning:
Front
Window is pressure
sensitive. Do not
apply pressure or
high vacuum to
window.
2
Anode Indicator
1
Pin #
1
2
LED
Anode
Cathode
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. —
1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue B 03/2012
Page 1 of 2
Infrared Light Emitting Diode
OPR2800, OPR2800T
Absolute Maximum Ratings
(T
A
= 25° C unless otherwise noted)
Storage and Operating Temperature Range
Reverse Voltage
Continuous Forward Current
Solder reflow time within 5°C of peak temperature is 20 to 40 seconds
(1)
Power Dissipation
-55
o
C to +125
o
C
30 V
50 mA
250° C
130 mW
(2)
Electrical Characteristics
(T
A
= 25° C unless otherwise noted)
SYMBOL
E
e (APT)
V
F
I
R
λ
P
θ
HP
t
r
, t
f
PARAMETER
Apertured Radiant Incidence
Forward Voltage
Reverse Current
Wavelength at Peak Emission
Emission Angle at Half Power Points
Output Rise Time, Output Fall Time
-
-
MIN
0.2
-
-
TYP
-
-
-
875
100
-
MAX
-
1.50
100
-
-
500
UNITS
TEST CONDITIONS
mW/cm
2
I
F
= 20 mA
(3)
V
µA
nm
Degree
ns
I
F
= 50 mA
V
R
= 2.0 V
I
F
= 10 mA
I
F
= 20 mA
I
F(PK)
= 100 mA, PW = 10 µs,
D.C. = 10.0%
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. Derate linearly at 1.30 mW/° C above 25° C.
3. E
e(APT)
is a measurement of the apertured radiant incidence upon a sensing area 0.081” (2.06 mm) in diameter, perpendicular to and
centered on the mechanical axis of the lens and 0.590” (14.99 mm) from the measurement surface. EE
(APT)
is not necessarily uniform
within the measured area.
OPR2800
Forward Voltage vs Forward Current
vs Temperature
1.8
1.7
1.6
3.5
Normalized at 50 mA and 20° C
3.0
-60° C
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
100° C
120° C
Optical Power vs I
F
vs
Temperature
Typical Forward Voltage (V)
Normalized Optical Power
2.5
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0
10
20
30
40
50
60
70
80
90
100
Forward Current (mA)
-60° C
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
100° C
120°C
2.0
1.5
1.0
0.5
0.0
0
10
20
30
40
50
60
70
80
90
100
Forward Current I
F
(mA)
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue B 03/2012
Page 2 of 2
OPTEK Technology Inc. —
1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
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