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P0402FC15C-LF

Trans Voltage Suppressor Diode, 250W, 15V V(RWM), Bidirectional, 1 Element, Silicon, ROHS AND REACH COMPLIANT, FLIP CHIP-4

器件类别：分立半导体    二极管   

厂商名称：ProTek Devices

厂商官网：http://www.protekdevices.com/

器件标准：  

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
ProTek Devices
零件包装代码
FLIP-CHIP
包装说明
R-PBGA-B4
针数
4
Reach Compliance Code
compliant
ECCN代码
EAR99
最小击穿电压
16.7 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
R-PBGA-B4
JESD-609代码
e1
最大非重复峰值反向功率耗散
250 W
元件数量
1
端子数量
4
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
GRID ARRAY
峰值回流温度（摄氏度）
270
极性
BIDIRECTIONAL
认证状态
Not Qualified
最大重复峰值反向电压
15 V
表面贴装
YES
技术
AVALANCHE
端子面层
Tin/Silver/Copper (Sn96.0Ag3.5Cu0.5)
端子形式
BALL
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
05107
Only One Name Means ProTek’Tion™
P0402FC3.3C - P0402FC36C
250w FliP ChiP tvs aRRay
DesCRiPtion
The P0402FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level
transient voltage protection against Electrostatic Discharge (ESD) and Electrical Fast Transients (EFT). Developed
specifically for high-density circuit protection, this series meets the IEC 61000-4-2 and 61000-4-4 requirements. These
devices are ideally suited for handheld devices, PCMCIA and SMART cards.
This series provides ESD protection greater than 25 kilovolts with a peak pulse power dissipation of 250 Watts per
line for an 8/20µs waveform. In addition, the P0402FCxxC series features superior clamping performance, low leak-
age current characteristics and a response time of less than a nanosecond. Their low inductance virtually eliminates
overshoot voltage due to package inductance.
0402 PaCkage
FeatuRes
•
•
•
•
•
•
•
•
Compatible with IEC 61000-4-2 (ESD): Air 15kV, Contact 8kV
Compatible with IEC 61000-4-4 (EFT): 40A, 5/50ns
ESD Protection > 25 kilovolts
Available in Voltages Ranging from 3.3V to 36V
250 Watts Peak Pulse Power per Line (tp = 8/20µs)
Protection for 1 Line
RoHS Compliant
REACH Compliant
aPPliCations
•
•
•
•
•
Cellular Phones
MCM Boards
Wireless Communication Circuits
IR LEDs
SMART & PCMCIA Cards
MeChaniCal ChaRaCteRistiCs
•
•
•
•
•
•
•
•
Standard EIA Chip Size: 0402
Approximate Weight: 0.73 milligrams
Lead-Free Plating
Solder Reflow Temperature:
Lead-Free - Sn/Ag/Cu, 96/3.5/0.5: 260-270°C
Flammability Rating UL 94V-0
8mm Tape per EIA Standard 481
Top Contacts: Solder Bump 0.004” in Height (Nominal)
CiRCuit DiagRaM
Pin 1
Pin 2
1 line of Protection
05107.R14 8/12
Page 1
www.protekdevices.com
05107
Only One Name Means ProTek’Tion™
P0402FC3.3C - P0402FC36C
tyPiCal DeviCe ChaRaCteRistiCs
MaXiMuM Ratings
@ 25°C unless otherwise specified
PaRaMeteR
Peak Pulse Power (tp = 8/20µs) - See Figure 1
Operating Temperature
Storage Temperature
syMBol
P
PP
T
A
T
STG
value
250
-55 to 150
-55 to 150
units
Watts
°C
°C
eleCtRiCal ChaRaCteRistiCs PeR line
@ 25°C unless otherwise specified
PaRt
nuMBeR
(note 1)
RateD
stanD-oFF
voltage
v
wM
volts
P0402FC3.3C
P0402FC05C
P0402FC08C
P0402FC12C
P0402FC15C
P0402FC24C
P0402FC36C
notes
3.3
5.0
8.0
12.0
15.0
24.0
36.0
MiniMuM
BReakDown
voltage
@ 1ma
v
(BR)
volts
4.0
6.0
8.5
13.3
16.7
26.7
40.0
MaXiMuM
ClaMPing
voltage
(Fig. 2)
@ i
P
= 1a
v
C
volts
7.0
11.0
13.2
19.8
25.4
37.2
70.0
MaXiMuM
ClaMPing
voltage
(Fig. 2)
@ 8/20µs
v
C
@ i
PP
12.5V @ 20A
14.7V @ 17A
19.2V @ 13A
29.7V @ 9A
35.7V @ 7A
55.0V @ 5A
84.0V @ 3A
MaXiMuM
leakage
CuRRent
(note 2)
@v
wM
i
D
µa
75*
10**
10***
1
1
1
1
tyPiCal
CaPaCitanCe
@0v, 1Mhz
C
pF
150
100
75
50
40
30
25
1. All devices are bidirectional. Electrical characteristics apply in both directions.
2. *Maximum leakage current < 5µA @ 2.8V. **Maximum leakage current < 500nA @ 3.3V. ***Maximum leakage current < 200nA @ 5V.
05107.R14 8/12
Page 2
www.protekdevices.com
05107
Only One Name Means ProTek’Tion™
P0402FC3.3C - P0402FC36C
tyPiCal DeviCe ChaRaCteRistiCs
FiguRe 1
Peak Pulse PoweR vs Pulse tiMe
10,000
P
PP
- Peak Pulse Power - watts
1,000
250W, 8/20µs Waveform
100
10
0.1
1
10
100
t
d
- Pulse Duration - µs
1,000
10,000
120
i
PP
- Peak Pulse Current - % of i
PP
FiguRe 2
Pulse wave FoRM
t
f
Peak Value I
PP
TEST
WAVEFORM
PARAMETERS
t
f
= 8µs
t
d
= 20µs
100
80
% of Rated Power
FiguRe 3
PoweR DeRating CuRve
Peak Pulse Power
8/20µs
100
80
60
40
20
0
0
5
e
-t
60
40
20
0
Average Power
t
d
= t/(I
PP
/2)
10
15
t - time - µs
20
25
30
0
25
50
75 100 125
t
a
- ambient temperature - °C
150
05107.R14 8/12
Page 3
www.protekdevices.com
05107
Only One Name Means ProTek’Tion™
P0402FC3.3C - P0402FC36C
tyPiCal DeviCe ChaRaCteRistiCs
FiguRe 4
oveRshoot & ClaMPing voltage FoR P0402FC05C
35
25
5 volts per Division
15
5
-5
esD test Pulse - 25 kilovolt, 1/30ns (waveshape)
FiguRe 5
tyPiCal ClaMPing voltage vs Peak Pulse CuRRent P0402FC05C
12
v
C
- Clamping voltage - volts
8
4
0
0
5
10
i
PP
- Peak Pulse Current - amps
15
20
05107.R14 8/12
Page 4
www.protekdevices.com
05107
Only One Name Means ProTek’Tion™
P0402FC3.3C - P0402FC36C
sPiCe MoDel
FiguRe 1
sPiCe MoDel FoR
I/O
ABD
ABD
GND
aBD - avalanche Breakdown Diode (tvs)
taBle 1 - sPiCe PaRaMeteRs
PaRaMeteR
BV
IBV
C
jo
I
S
Vj
M
N
R
S
TT
EG
unit
V
µA
pF
A
V
-
-
-
s
eV
aBD(tvs)
See Table 2
1
See Table 2
See Table 2
0.6
0.33
1
See Table 2
1E-8
1.11
PaRt nuMBeR
P0402FC3.3C
P0402FC05C
P0402FC08C
P0402FC12C
P0402FC15C
P0402FC24C
P0402FC36C
taBle 2 - aBD sPeCiFiC sPiCe PaRaMeteRs
i
s
(aMPs)
B
v
(volts)
C
jo
(
p
F)
4.0
6.0
8.5
13.3
16.7
26.7
40.2
150
100
75
50
40
20
15
1E-11
1E-11
1E-13
1E-13
1E-13
1E-13
1E-13
R
s
(ohMs)
0.20
0.16
0.33
0.51
0.53
0.63
0.73
05107.R14 8/12
Page 5
www.protekdevices.com
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参数对比
与P0402FC15C-LF相近的元器件有：P0402FC3.3C-LF、P0402FC24C-LF、P0402FC08C-LF、P0402FC12C-LF、P0402FC36C-LF、P0402FC05C-LF。描述及对比如下：
型号 P0402FC15C-LF P0402FC3.3C-LF P0402FC24C-LF P0402FC08C-LF P0402FC12C-LF P0402FC36C-LF P0402FC05C-LF
描述 Trans Voltage Suppressor Diode, 250W, 15V V(RWM), Bidirectional, 1 Element, Silicon, ROHS AND REACH COMPLIANT, FLIP CHIP-4 Trans Voltage Suppressor Diode, 250W, 3.3V V(RWM), Bidirectional, 1 Element, Silicon, ROHS AND REACH COMPLIANT, FLIP CHIP-4 Trans Voltage Suppressor Diode, 250W, 24V V(RWM), Bidirectional, 1 Element, Silicon, ROHS AND REACH COMPLIANT, FLIP CHIP-4 Trans Voltage Suppressor Diode, 250W, 8V V(RWM), Bidirectional, 1 Element, Silicon, ROHS AND REACH COMPLIANT, FLIP CHIP-4 Trans Voltage Suppressor Diode, 250W, 12V V(RWM), Bidirectional, 1 Element, Silicon, ROHS AND REACH COMPLIANT, FLIP CHIP-4 Trans Voltage Suppressor Diode, 250W, 36V V(RWM), Bidirectional, 1 Element, Silicon, ROHS AND REACH COMPLIANT, FLIP CHIP-4 Trans Voltage Suppressor Diode, 250W, 5V V(RWM), Bidirectional, 1 Element, Silicon, ROHS AND REACH COMPLIANT, FLIP CHIP-4
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合
零件包装代码 FLIP-CHIP FLIP-CHIP FLIP-CHIP FLIP-CHIP FLIP-CHIP FLIP-CHIP FLIP-CHIP
包装说明 R-PBGA-B4 R-PBGA-B4 R-PBGA-B4 R-PBGA-B4 R-PBGA-B4 R-PBGA-B4 R-PBGA-B4
针数 4 4 4 4 4 4 4
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最小击穿电压 16.7 V 4 V 26.7 V 8.5 V 13.3 V 40 V 6 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码 R-PBGA-B4 R-PBGA-B4 R-PBGA-B4 R-PBGA-B4 R-PBGA-B4 R-PBGA-B4 R-PBGA-B4
JESD-609代码 e1 e1 e1 e1 e1 e1 e1
最大非重复峰值反向功率耗散 250 W 250 W 250 W 250 W 250 W 250 W 250 W
元件数量 1 1 1 1 1 1 1
端子数量 4 4 4 4 4 4 4
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY
峰值回流温度（摄氏度） 270 270 270 270 270 270 270
极性 BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 15 V 3.3 V 24 V 8 V 12 V 36 V 5 V
表面贴装 YES YES YES YES YES YES YES
技术 AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
端子面层 Tin/Silver/Copper (Sn96.0Ag3.5Cu0.5) Tin/Silver/Copper (Sn96.0Ag3.5Cu0.5) Tin/Silver/Copper (Sn96.0Ag3.5Cu0.5) Tin/Silver/Copper (Sn96.0Ag3.5Cu0.5) Tin/Silver/Copper (Sn96.0Ag3.5Cu0.5) Tin/Silver/Copper (Sn96.0Ag3.5Cu0.5) Tin/Silver/Copper (Sn96.0Ag3.5Cu0.5)
端子形式 BALL BALL BALL BALL BALL BALL BALL
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
厂商名称 ProTek Devices - - - ProTek Devices ProTek Devices ProTek Devices
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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