STP36NF06L
STB36NF06L
N-channel 60V - 0.032Ω - 30A - TO-220 - D
2
PAK
STripFET™ II Power MOSFET
General features
Type
STP36NF06L
STB36NF06L
■
■
■
V
DSS
60V
60V
R
DS(on)
< 0.04Ω
< 0.04Ω
I
D
30A
30A
3
1
2
Exceptional dv/dt capability
3
100% avalanche tested
Low threshold drive
1
D²PAK
TO-220
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Internal schematic diagram
Applications
■
Switching application
Order codes
Sales type
STP36NF06L
STB36NF06L
Marking
P36NF06L
B36NF06
Package
TO-220
D²PAK
Packaging
Tube
Tape & reel
June 2006
Rev 3
1/14
www.st.com
14
Contents:
STP36NF06L - STB36NF06L
Contents:
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
4
5
6
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STP36NF06L - STB36NF06L
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM(1)
P
TOT
dv/dt
(2)
E
AS(3)
T
j
T
stg
Absolute maximum ratings
Parameter
Drain-source Voltage (V
GS
=0)
Drain-gate voltage (R
GS
=20KΩ)
Gate-source voltage
Drain-current (continuos) at Tc=25°C
Drain-current (continuos) at Tc=100°C
Drain-current (pulsed)
Total dissipation at Tc=25°C
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Operating junction temperature
Storage temperature
Value
60
60
±18
30
21
120
70
0.47
10
225
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
1. Pulse width limited by safe operating area.
2.
I
SD
≤
30A, di/dt
≤
400A/µs, V
DD
<
V
(BR)DSS.
Tj < Tjmax
3. Starting Tj=25°C, I
D
=15A, V
DD
=30V
Table 2.
Symbol
Rthj-case
Rthj-amb
T
l
Thermal resistance
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient (free air) max
Maximum lead temperature for soldering purpose
Value
2.14
62.5
300
Unit
°C/W
°C/W
°C
3/14
Electrical characteristics
STP36NF06L - STB36NF06L
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Static
Parameter
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
GS
=0)
Gate-body leakage current
(V
DS
=0)
Gate Threshold Voltage
Static drain-source on
resistance
Test condictions
I
D
=250µA, V
GS
=0
V
DS
=Max rating
V
DS
=Max rating Tc=125°C
V
GS
=±18V
V
DS
=V
GS,
I
D
=250µA
V
GS
=10V, I
D
=15A
V
GS
=5V, I
D
=15A
1
0.032
0.045
Min.
60
1
10
±100
2.5
0.04
0.05
Typ.
Max. Unit
V
µA
µA
nA
V
Ω
Ω
Table 4.
Symbol
gfs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Test condictions
V
DS
=15V, I
D
=15A
V
DS
=25V, f=1MHz,V
GS
=0
Min
Typ
15
660
170
70
13
4.2
7.8
17
Max Unit
S
pF
pF
pF
nC
nC
nC
V
DD
=30V, I
D
=30A
V
GS
=5V
4/14
STP36NF06L - STB36NF06L
Electrical characteristics
Table 5.
Symbol
t
d(on)
t
r
Switching on/off (inductive load)
Parameter
Turn-on delay Time
Rise time
Test condictions
V
DD
=30V, I
D
=15A
,
R
G
=4.7Ω V
GS
=5V
(see
Figure 14)
V
DD
=30V, I
D
=15A
,
R
G
=4.7Ω V
GS
=5V
(see
Figure 14)
Min.
Typ.
10
80
Max.
Unit
ns
ns
t
d(off)
t
f
Turn-off delay time
Fall time
19
13
ns
ns
Table 6.
Symbol
I
SD
I
SDM
(1)
Source Drain Diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=24A, V
GS
=0
I
SD
=20A, V
DD
=20V,
di/dt=100A/µs, Tj=150°C
55
107
3.9
Test condictions
Min.
Typ.
Max.
30
120
1.5
Unit
A
A
V
ns
nC
A
V
SD(2)
t
rr
Q
rr
I
RRM
1. Pulse width limited by safe operating area.
2. Pused: pulse duration=300µs, duty cycle 1.5%
5/14
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