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PB1010S

Bridge Rectifier Diode, 1 Phase, 10A, 1000V V(RRM), Silicon

器件类别:分立半导体    二极管   

厂商名称:SEMIKRON

厂商官网:http://www.semikron.com

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器件参数
参数名称
属性值
厂商名称
SEMIKRON
包装说明
S-PUFM-W4
Reach Compliance Code
unknown
外壳连接
ISOLATED
配置
BRIDGE, 4 ELEMENTS
二极管元件材料
SILICON
二极管类型
BRIDGE RECTIFIER DIODE
JESD-30 代码
S-PUFM-W4
最大非重复峰值正向电流
150 A
元件数量
4
相数
1
端子数量
4
最大输出电流
10 A
封装主体材料
PLASTIC/EPOXY
封装形状
SQUARE
封装形式
FLANGE MOUNT
认证状态
Not Qualified
最大重复峰值反向电压
1000 V
表面贴装
NO
端子形式
WIRE
端子位置
UPPER
文档预览
PB 1000 … PB 1010
PB 1000S … PB 1010S
Silicon-Bridge Rectifiers
Silizium-Brückengleichrichter
Type: PB...
Type: PB...S
Nominal current – Nennstrom
Alternating input voltage
Eingangswechselspannung
10 A
35…700 V
Type: PB...
Plastic case
19 x 19 x 6.8 [mm]
Kunststoffgehäuse
Weight approx. – Gewicht ca.
5,5 g
Type: PB...S
Plastic case with al-bottom 15.1 x 15.1 x 5 [mm]
Kunststoffgehäuse mit Alu-Boden
Weight approx. – Gewicht ca.
3,5 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
Standard packaging bulk
Standard Lieferform lose im Karton
Maximum ratings
Type
Typ
Grenzwerte
Alternating input voltage Repetitive peak reverse voltage Surge peak reverse voltage
Eingangswechselspannung Period. Spitzensperrspannung
Stoßspitzensperrspannung
1
V
VRMS
[V]
V
RRM
[V] )
V
RSM
[V]
1
)
PB 1000/S
PB 1001/S
PB 1002/S
PB 1004/S
PB 1006/S
PB 1008/S
PB 1010/S
35
70
140
280
420
560
700
50
100
200
400
600
800
1000
80
130
250
450
700
1000
1200
Repetitive peak fwd. current – Period. Spitzenstrom
Peak forward surge current, 60 Hz half sine-wave
Stoßstrom für eine 60 Hz Sinus-Halbwelle
Rating for fusing – Grenzlastintegral, t < 10 ms
f > 15 Hz
T
A
= 25
L
C
T
A
= 25
L
C
I
FRM
I
FSM
i
2
t
50 A
2
)
150 A
93 A
2
s
1
2
) Valid for one branch – Gültig für einen Brückenzweig
) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlußdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
346
221101
© by SEMIKRON
PB 1000 … PB 1010
PB 1000S … PB 1010S
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
j
T
S
– 50…+150
L
C
– 50…+150
L
C
Characteristics
Max. current with cooling fin 300 cm
2
Dauergrenzstrom mit Kühlblech 300 cm
2
Forward voltage – Durchlaßspannung
Leakage current – Sperrstrom
T
A
= 50
L
C
T
j
= 25
L
C
T
j
= 25
L
C
R-load
C-load
I
F
= 5 A
V
R
= V
RRM
I
FAV
I
FAV
V
F
I
R
V
ISO
Kennwerte
10.0 A
8.0 A
< 1.2 V
1
)
< 10
W
A
> 2500 V
Isolation voltage terminals to case
Isolationsspannung Anschlüsse zum Gehäuse
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
Admissible torque for mounting
Zulässiges Anzugsdrehmoment
M4
R
thC
< 3.3 K/W
9 ± 10% lb.in.
1 ± 10% Nm
1
) Valid for one branch – Gültig für einen Brückenzweig
© by SEMIKRON
221101
347
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参数对比
与PB1010S相近的元器件有:PB1002S、PB1008、PB1006、PB1006S、PB1010、PB1001、PB1001S、PB1008S。描述及对比如下:
型号 PB1010S PB1002S PB1008 PB1006 PB1006S PB1010 PB1001 PB1001S PB1008S
描述 Bridge Rectifier Diode, 1 Phase, 10A, 1000V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 10A, 200V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 10A, 800V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 10A, 600V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 10A, 600V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 10A, 1000V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 10A, 100V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 10A, 100V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 10A, 800V V(RRM), Silicon
包装说明 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 代码 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4 S-PUFM-W4
最大非重复峰值正向电流 150 A 150 A 150 A 150 A 150 A 150 A 150 A 150 A 150 A
元件数量 4 4 4 4 4 4 4 4 4
相数 1 1 1 1 1 1 1 1 1
端子数量 4 4 4 4 4 4 4 4 4
最大输出电流 10 A 10 A 10 A 10 A 10 A 10 A 10 A 10 A 10 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 1000 V 200 V 800 V 600 V 600 V 1000 V 100 V 100 V 800 V
表面贴装 NO NO NO NO NO NO NO NO NO
端子形式 WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
端子位置 UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER
厂商名称 SEMIKRON - - SEMIKRON SEMIKRON SEMIKRON SEMIKRON SEMIKRON SEMIKRON
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