PC725V0NSZX Series
PC725V0NSZX
Series
DIP 6 pin Darlington
Phototransistor output, High
Collector-emitter Voltage, High
Power Photocoupler
■
Description
PC725V0NSZX Series
contains an IRED optically
coupled to a phototransistor.
It is packaged in a 6 pin DIP, available in SMT gullw-
ing lead-form option.
Input-output isolation voltage(rms) is 5.0kV.
Collector-emitter voltage is 300V, CTR is MIN. 1 000%
at input current of 1mA and collector power dissipation is
300mW.
■
Agency approvals/Compliance
1. Recognized by UL1577 (Double protection isolation),
file No. E64380 (as model No.
PC725V)
2. Approved by TÜV (VDE0884) (as an option) file No.
R-9151576 (as model No.
PC725V)
3. Package resin : UL flammability grade (94V-0)
■
Applications
1. Home appliances
2. Programmable controllers
3. Personal computer peripherals
■
Features
1. 6 pin DIP package
2. Double transfer mold package (Ideal for Flow Solder-
ing)
3. High collector-emitter voltage (V
CEO
:300V)
4. Darlington phototransistor output (CTR : MIN. 1 000%
at I
F
=1mA, V
CE
=2V)
5. Large collector power dissipation (P
C
:300mW)
6. High isolation voltage between input and output
(V
iso(rms)
: 5.0kV)
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: D2-A04501EN
Date Nov. 28. 2003
© SHARP Corporation
PC725V0NSZX Series
■
Internal Connection Diagram
1
1
2
3
6
5
4
2
3
4
5
6
Anode
Cathode
NC
Emitter
Collector
Base
■
Outline Dimensions
1. Through-Hole [ex.
PC725V0NSZX]
1.2
±0.3
0.6
±0.2
SHARP
mark
"S"
Anode
mark
1
2
3
6
5
4
(Unit : mm)
2. Through-Hole (VDE0884 option) [ex.
PC725V0YSZX]
1.2
±0.3
0.6
±0.2
SHARP
mark
"S"
6
5
4
VDE0884
Identification mark
6.5
±0.5
PC725V
PC725V
Anode
mark
1
4
2
3
±0.3
Date code
7.62
±0.3
0.5
TYP.
3.5
±0.5
7.12
±0.5
7.12
6.5
±0.5
Date code
7.62
±0.3
0.5
TYP.
3.5
±0.5
2.9
±0.5
2.9
±0.5
Epoxy resin
3.25
±0.5
0.5
±0.1
0.5
±0.1
3.25
±0.5
Epoxy resin
2.54
±0.25
θ
θ
: 0 to 13˚
θ
2.54
±0.25
θ
θ
: 0 to 13˚
θ
3. SMT Gullwing Lead-Form [ex.
PC725V0NIPX]
1.2
±0.3
5
4
4. SMT Gullwing Lead-Form (VDE0884 option)
[ex.
PC725V0YIPX]
0.6
±0.2
6
5
0.6
±0.2
6
1.2
±0.3
4
SHARP
mark
"S"
Anode
mark
6.5
±0.5
Anode
mark
1
4
Date code
1
2
3
2
3
VDE0884 Identification mark
7.12
±0.5
7.62
±0.3
0.35
±0.25
0.26
±0.1
3.5
±0.5
7.12
±0.5
6.5
±0.5
Date code
PC725V
SHARP
mark
"S"
PC725V
7.62
±0.3
0.26
±0.1
3.5
±0.5
0.35
±0.25
Epoxy resin
10.0
+0
−0.5
1.0
+0.4
−0
Sheet No.: D2-A04501EN
2.54
±0.25
1.0
+0.4
−0
Epoxy resin
10.0
+0
−0.5
1.0
+0.4
−0
2.54
±0.25
1.0
+0.4
−0
2
PC725V0NSZX Series
(Unit : mm)
5. Wide SMT Gullwing Lead-Form
[ex.
PC725V0NUZX]
0.6
±0.2
1.2
±0.3
6. Wide SMT Gullwing Lead-Form (VDE0884 option)
[ex.
PC725V0YUZX]
0.6
±0.2
1.2
±0.3
SHARP mark "S"
6.5
±0.5
4
Date code
Anode
mark
Anode
mark
3.5
±0.5
3.5
±0.5
7.12
±0.5
7.62
±0.3
0.25
±0.25
7.12
±0.5
VDE0884 Identification mark
6.5
±0.5
Date code
PC725V
PC725V
SHARP mark "S"
7.62
±0.3
0.25
±0.25
0.26
±0.1
0.26
±0.1
2.54
±0.25
Epoxy resin
2.54
±0.25
0.75
±0.25
Epoxy resin
10.16
±0.5
12.0
MAX.
0.75
±0.25
0.75
±0.25
10.16
±0.5
12.0
MAX.
0.75
±0.25
Product mass : approx. 0.36g
Sheet No.: D2-A04501EN
3
PC725V0NSZX Series
Date code (2 digit)
1st digit
Year of production
A.D
Mark
2002
A
2003
B
2004
C
2005
D
2006
E
2007
F
2008
H
2009
J
2010
K
2011
L
2012
M
·
·
N
·
2nd digit
Month of production
Month
Mark
January
1
February
2
March
3
April
4
May
5
June
6
July
7
August
8
September
9
October
O
November
N
December
D
A.D.
1990
1991
1992
1993
1994
1995
1996
1997
1998
1999
2000
2001
Mark
P
R
S
T
U
V
W
X
A
B
C
·
·
·
repeats in a 20 year cycle
Country of origin
Japan
Sheet No.: D2-A04501EN
4
PC725V0NSZX Series
■
Absolute Maximum Ratings
Parameter
Symbol
I
F
Forward current
*1
Peak forward current
I
FM
Reverse voltage
V
R
Power dissipation
P
Collector-emitter voltage V
CEO
Collector-base voltage
V
CBO
Emitter-base voltage
V
EBO
I
C
Collector current
−I
C
Collector current (reverse)
Collector power dissipation
P
C
P
tot
Total power dissipation
T
opr
Operating temperature
T
stg
Storage temperature
*2
Isolation voltage
V
iso (rms)
*3
Soldering temperature
T
sol
(T
a
=25˚C)
Rating
Unit
50
mA
1
A
6
V
70
mW
300
V
300
V
6
V
150
mA
10
mA
300
mW
350
mW
−25
to
+100
˚C
−40
to
+125
˚C
5
kV
260
˚C
*1 Pulse width≤100µs, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1minute, f=60Hz
*3 For 10s
■
Electro-optical Characteristics
Symbol
Parameter
V
F
Forward voltage
Peak forward voltage
V
FM
Reverse current
I
R
Terminal capacitance
C
t
I
CEO
Collector dark current
Collector-emitter breakdown voltage BV
CEO
Emitter-base breakdown voltage BV
EBO
Collector-base breakdown voltage BV
CBO
Current transfer ratio
I
C
Collector-emitter saturation voltage V
CE (sat)
Isolation resistance
R
ISO
C
f
Floating capacitance
f
C
Cut-off frequency
Rise time
t
r
Response time
Fall time
t
f
Conditions
I
F
=10mA
I
FM
=0.5V
V
R
=4V
V=0, f=1kHz
V
CE
=200V,
I
F
=0
I
C
=0.1mA,
I
F
=0
I
E
=10µA,
I
F
=0
I
C
=0.1mA,
I
F
=0
I
F
=1mA,
V
CE
=2V
I
F
=20mA,
I
C
=100mA
DC500V, 40 to 60%RH
V=0, f=1MHz
V
CE
=2V,
I
C
=20mA,
R
L
=100Ω −3dB
Output
Input
Input
Output
Transfer
charac-
teristics
V
CE
=2V,
I
C
=20mA,
R
L
=100Ω
MIN.
−
−
−
−
−
300
6
300
10
−
5×10
10
−
1
−
−
TYP.
1.2
−
−
30
−
−
−
−
40
−
1×10
11
0.6
7
100
20
MAX.
1.4
3.0
10
250
1 000
−
−
−
150
1.2
−
1.0
−
300
100
(T
a
=25˚C)
Unit
V
V
µA
pF
nA
V
V
V
mA
V
Ω
pF
kHz
µs
µs
Sheet No.: D2-A04501EN
5
