Safeguard sensitive ICs - Increase
battery life - Save space
With NXP key products as
recommended in this brochure
Interface / Function
NFC antenna
protection
MIPI CSI / DSI
protection
Description
18 / 24 V Birectional
low capacitance ESD
protection diode
Common Mode
Filter with integrated
ESD protection
Integrated or
discrete solutions
with very low line
capacitance
Common mode filter
for USB2.0
Protection of micro-
USB ports
Vbus protection with
V
RWM
= 5.5, 12, 15,
or 30 V
Very good system
protection for high-
speed TMDS lines
Product type
PESD18VF1BL
PESD24VF1BL
PESD18VF1BSF
PESD24VF1BSF
PCMF2DFN1
PCMF3DFN1
IP4369CX4 /
IP4303CX4
PRTR5V0U2F
IP4282CZ6
PUSB3F96
PESD5V0F1BSF
IP3319CX6
Package
DFN1006
DFN1006
DSN0603
DSN0603
DFN2520
DFN4020
WLCSP
DFN1006
DFN1010
DFN2510
DSN0603
WLCSP
13
Wireless charging
12
Very efficient low
R
DSon
MOSFETs
Very efficient low
V
F
and I
R
Schottky
diodes
Page
Interface / Function
Generic ESD
protection in smallest
form factors
Boost converter for
LED backlight
Description
Various ESD
protection diodes
for generic and high-
speed applications
20, 40 V, up to 2 A,
low V
F
Schottky
rectifiers
Product type
PESDxSF series
PESDxBL /
PESDxUL
PESDxBLD /
PESDxULD
PMEGxEPK series
PMPB12UN
PMPB15XN
PMDPB85UPE
PMPB16XN
PMPB40SNA
PMPB33XP
PMPB48EP
PMEGxEPK series
PMEGxBELD series
PMXB40UNE
PMXB65UPE
PMDXB950UPE
PMDXB900UNE
PMCXB900UE
PMZB290UN
PMZ250UN
2N7002BKMB
NX3008NBKMB
NX3008PBKMB
PMZB350UPE
PMPB15XP
PMDPB70XP
PMC85XP
PMDPB58UPE
PMPB11EN
PMPB20EN
Package
DSN0603
DFN1006
DFN1006
DFN1006D
DFN1006D
DFN1608D
DFN2020
DFN2020
DFN2020
DFN2020
DFN2020
DFN2020
DFN2020
DFN1608D
DFN1006D
DFN1010
DFN1010
DFN1010
DFN1010
DFN1010
DFN1006
DFN1006
DFN1006
DFN1006
DFN1006
DFN1006
DFN2020
DFN2020
DFN2020
DFN2020
DFN2020
DFN2020
Page
10
4, 5
11
8
USB 3.0 / USB
2.0 High-Speed
protection
USB 2.0 OTG
protection and EMI
filter
USB On-The-Go
(OTG) protection
17
PUSBMxVX4-TL
series
DFN1616
13
HDMI interface
protection
PUSB3F96
IP4064CX8
IP4364CX8
IP4365CX11
IP4366CX8
IP4264CZ8
PESD5V0V4Ux
family
PESD5V0F5UF
PESD5V0F5UV
IP4340CX15
IP4357CX17
IP4251CZ12
IP4252CZ12
PESD12VV1BL
PMPB15XP
PMDP58UPE
PMDPB70XP
PTVS12VS1UR
PTVS26VS1UR
BZX884-C5V6
TDZ5V6J
DFN2510
WLCSP
WLCSP
WLCSP
WLCSP
several small
SMD and DFN
packages
12
SIM Card protection
ESD protection
diodes with and
without EMI Filtering
Ultra-small MOSFETs
for
}
Load switches
}
Battery / Charger
switches
}
DC-DC conversion
12-60 V DFN
MOSFETs
6, 7
14
SD Card protection
Devices for
protection
and interface
conditioning
Bidirectional ESD
protection diode
with 12 V reverse
standoff voltage
Battery MOSFET /
MOSFETs in the pass
element
Transient Voltage
Suppressor (TVS)
Voltage regulator
diode
Zener diodes
WLCSP
WLCSP
DFN2514
DFN2514
DFN1006
DFN2020
DFN2020
DFN2020
SOD123W
SOD123W
DFN1006
SOD323F
15
Bipolar transistor /
MOSFET for
}
Load switches
}
Power management
}
Charger circuits
Bipolar transistors for
the Charger path
PNP low V
CEsat
transistor / N-ch.
Trench MOSFET
combination
PBSM5240PF
DFN2020
9
Audio Interface
protection (Headset,
Speaker, Mic)
Battery protection /
Charger interface
12
Low V
CEsat
Transistors
16
PBSS5330PA
PBSS230QA
PBSS5330X
PBSS5320X
PBSS301PD
DFN2020
DFN1010
SOT89
SOT89
SOT457
9
Surge protection /
Charger interface
16
Discretes for portable devices
and mobile handsets
Setting the standard in performance,
efficiency, and size
www.nxp.com
© 2013 NXP Semiconductors N.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner. The information presented in this document does not form part of any quotation or contract,
is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: September 2013
Document order number: 9397 750 17444
Printed in the Netherlands
NXP: Your one-stop-shop discrete partner for mobile devices
Looking for solutions to
}
Safeguard sensitive ICs
}
Increase battery life
}
Save space
Benefit from our experience and speed up time-to-market! We offer:
}
60 years experience in developing and producing diodes and transistors
}
Long-standing partnerships with every major handset maker in the industry
}
Commitment to highest quality standards and a reliable, efficient supply infrastructure, we are the no. 1 discrete supplier in units
}
One of the most comprehensive discrete portfolio perfectly fitting the needs of mobile device makers with
- Advanced protection and filtering solutions
- Highly efficient Schottky diodes, small-signal MOSFETs, and bipolar transistors
- Next generation package solutions
An NXP discrete solution for every interface
• NFC Antenna protection
Page 10
• USB2.0, USB3.0, USB OTG with
Vbus protection
Page 12, 13
• Battery protection
Page 16
• Camera, Keypad, Display (MIPI,
DSI, CSI)
Page 11
• Microphone, speaker, head set
Page 12
• (SD-)Memory Cards, SIM Cards
Page 14, 15
• Wireless charging
Page 17
• LED backlight boost converter
Page 8
• HDMI protection
Page 12
• Generic ESD protection
Page 4, 5
• Ultra-small MOS and bipolar
transistors for
}
Load switches
}
Charger / battery switches
}
DC-DC conversion
Page 6, 7, 9
Choose the solution you need from NXP‘s broad range of Discrete Flat No-leads (DFN) packages –
one of the most extensive in industry
}
More than 30 leadless package options, from 2 to 32 pins
}
From ultra-small 0603 size (0201 inch) to medium power
Package highlights include
Packages with heat sink at die pad and dual die pad
}
Thermal excellence, for high power on a small footprint, enabling smaller designs
}
Multiple configurations possible
Package highlights include
Packages with tin-plated and 100% solderable side pads
}
Enabling visual inspection of solder joints
}
For enhanced robustness, optimized for maximum sheer forces,
board bending and reduced package tilting angle
}
Four package options available with 2, 3, and 6 pins
Largest discrete portfolio in
1 x 1 mm and 1 x 0.6 mm packages,
only 0.37 mm high
Ultra-small DSN0603 package
0.6 x 0.3 mm
only 0.3 mm high
Download
DFN Package poster
Superior thermal performance: With a high power
dissipation density DFN2020 far exceeds SO-8.
More details in Application note 11304. Download now:
2
Mobile brochure
Application note 11304:
www.nxp.com/documents/application_note/AN11304.pdf
DFN Package Poster
www.nxp.com/documents/other/Discrete_Flat_No-leads_DFN_package_poster.pdf
Mobile brochure
3
Best protection in smallest packages – NXP ESD protection solutions in 1006- and 0603- size
Industry’s broadest portfolio of protection diodes in DFN1006(D)-2
As devices are getting smaller and data rates faster, today’s electronic
circuits are increasingly sensitive to ESD. NXP offers a large portfolio of ESD
protection diodes in the leadless ultra-small plastic package DFN1006(D)-2
with the industry standard outline 0603 (0402 inch).
Key features and benefits:
}
Ultra-small package size of 1 x 0.6 mm and a height of 0.37 mm / 0.5 mm
}
Up to 30 kV ESD robustness according to IEC61000-4-2
}
Up to 15 A peak pulse current for an 8/20 µs pulse
}
Ultra low leakage current of 1 nA typical – ideal for battery powered devices
}
Package version with tin-plated, solderable side pads available
(DFN1006D-2) (fully compatible to standard leadless 1006, 2-pin packages)
Portfolio:
}
General purpose devices with high surge rating and ESD robustness and
better clamping performance
}
Uni-directional ESD protection diodes for a wide range of max. reverse
operating voltages V
RWM
}
Bi-directional configuration to cover many applications where AC signals
need to be handled or lowest capacitance values are indispensable
DFN1006D-2 Outline
0.65
0.55
0.30
0.22
2
1.05
0.95
0.4
max
0.65
0.30
0.22
1
DSN0603-2 – the smallest available package for protection diodes
NXP continuously extends its protection portfolio in DSN0603-2 (0201 inch) –
the ideal fit for protection solutions like data-, speaker- and microphone-line
protection or keypad protection in smart phones or tablets, but also for
high-speed interface protection.
Key features and benefits:
}
Ultra small package size of 0.6 x 0.3 mm and ultra low package height of
only 0.3 mm save PCB space
}
Up to 30 kV ESD robustness according to IEC61000-4-2
}
Up to 8 A peak pulse current for an 8/20 µs pulse
}
Ultra low leakage current of 1 nA typical and 0.1 µA max. – ideal for battery
powered devices
}
Line capacitances down to 0.25 pF
Highlight product: PESD5V0F1BSF
}
Ultra low line capacitance of 0.25 pF
}
Minimized capacitance variation over voltage
}
High ESD robustness = 10 kV
DSN0603-2 Outline
0.15
0.13
1
2
0.25
0.23
0.55
0.45
cathode marking on top side
0.4
0.625
0.575
0.32
0.28
0.0076
(2)
0.325
0.275
DFN1006-2 Outline
Note
1. Dimension A is including coating foil thickness.
2. The marking bar indicates the cathode.
More key products:
Key products:
Bi-directional diodes in DFN1006-2 (SOD882)
C
d
(typ.)
in pF
1.3
0.85
0.9
11
0.4
0.49
17
0.4
V
RWM
in V
3.3
5
5
5
5.5
5.5
12
18
V
ESD
in kV
(IEC61000-4-2)
9
15
9
30
10
8
30
10
Bi-directional diodes in DFN1006D-2 (SOD882D)
C
d
(typ.)
in pF
2.9
11
35
0.4
V
RWM
in V
5
5
5
5.5
V
ESD
in kV
(IEC61000-4-2)
10
30
30
10
High speed data lines
Low capacitance
PESD5V0F1BRSF, 0.25 pF
PESD5V0F1BSF, 0.25 pF
PESD5V0F1USF, 0.5 pF
PESD18VF1BSF, 0.3 pF
PESD24VF1BSF, 0.4 pF
/24V
- For NFC antenna
PESD5V0V1USF, 4 pF, 15 kV
PESD5V0V1BSF, 3.5 pF, 15 kV
Unidirectional
Bidirectional
Interfaces
eSATA
USB3.0
USB2.0
PESD3V3X1BL
PESD5V0X1BCAL
PESD5V0X1BL
PESD5V0V1BL
PESD5V0F1BL
PESD5V0X1BCL
PESD12VV1BL
PESD18VF1BL
PESD5V0U1BLD
PESD5V0V1BLD
PESD5V0S1BLD
PESD5V0F1BLD
NFC
PESD3V3U1UL
PESD3V3L1UL
PESD3V3S1UL
PESD5V0U1UL
PESD5V0L1UL
PESD9X5.0L
PESD5V0S1UL
PESD9X7.0L
PESD12VS1UL
PESD15VS1UL
PESD16VX1UL
PESD24VS1UL
PESD36VS1UL
C
d
(typ.)
in pF
2.6
34
207
2
25
68
152
62
38
32
0.83
23
18
V
RWM
in V
3.3
3.3
3.3
5
5
5
5
7
12
15
16
24
36
V
ESD
in kV
(IEC61000-4-2)
9
30
30
9
26
30
30
30
30
30
8
23
30
PESD5V0L1ULD
PESD5V0S1ULD
PESD5V0X1ULD
PESD5V0X1UALD
PESD12VS1ULD
PESD15VS1ULD
PESD24VS1ULD
C
d
(typ.)
in pF
25
152
0.95
1.55
38
32
23
V
RWM
in V
5
5
5.5
5.5
12
15
24
V
ESD
in kV
(IEC61000-4-2)
26
30
8
15
30
30
23
Low speed data lines
High capacitance
Uni-directional diodes in DFN1006-2 (SOD882)
Uni-directional diodes in DFN1006D-2 (SOD882D)
PESD5V0V1BCSF, 5.3 pF, 20 kV
PESD5V0V1BDSF, 5.3 pF, 25 kV
PESD5V0L1USF, 12 pF, 30 kV
PESD5V0L1BSF, 12 pF, 30 kV
PESD5V0S1USF, 35 pF, 30 kV
PESD5V0S1BSF, 35 pF, 30 kV
Visit the DSN0603-2 ESD
product information page
General
protection
View complete
ESD protection
portfolio
8 kV -10 kV
15 kV
> = 20kV
www.nxp.com/products/esd_emi_and_signal_conditioning/
www.nxp.com/group/11064
4
Mobile brochure
Mobile brochure
5
High performance MOSFETs in small packages – for switching and power conversion
Discover NXP’s extensive range of high-performance, low R
DSon
MOSFETs in small form factors
– DFN packages save >50% space at same electrical performance of larger gullwing packages –
Solutions for very small low-power actuators and low-ohmic switches
– DFN MOSFETs in portable applications –
Key products for load switches in power management units
}
DFN2020MD-6
with 1.7 W power capability
replaces larger gullwing packages like SO8,
SOT223, SOT89, and SOT457
}
DFN1010D-3
with 1 W power capability
replaces SOT457 and SOT23 low R
DSon
types
on a 85% reduced footprint size
}
DFN1006
with 0.7 W power capability
replaces a large range of standard packages
like SOT23, SOT323, SOT416, and “1208-
size” (VEMT3, SOT723 …)
Key products for battery switches / charger switches
Polarity
V
DS
(V)
12
30
30
20
R
DSon
typ (mΩ)
15
70
85
58
Package
DFN2020
DFN2020
DFN2020
DFN2020
CONTROL N-FET
BODY DIODE
Polarity
V
out
V
DS
(V)
12
12
20
20
20
20
20
60
30
30
20
R
DSon
typ (mΩ)
40
65
950
900
900/950
290
250
1300
1000
2800
330
Package
DFN1010
DFN1010
DFN1010
DFN1010
DFN1010
DFN1006
DFN1006
DFN1006
DFN1006
DFN1006
DFN1006
V
in
R1
LOAD PATH
P-FET
R2
RLOAD
CONTROL SIGNAL
BODY DIODE
PMXB40UNE
PMXB65UPE
PMDXB950UPE
PMDXB900UNE
PMCXB900UE
PMZB290UN
PMZ250UN
2N7002BKMB
NX3008NBKMB
NX3008PBKMB
PMZB350UPE
N
P
Dual P
Dual N
Compl.
N
N
N
N
P
P
The Ultimate in Miniaturization: DFN1006(B)-3
85% space reduction
Same power dissipation (350 mW)
DFN1006(B)-3:
}
1.0 mm x 0.6 mm, height 0.37 mm (DFN1006(B)-3),
0.5 mm (DFN1006-3)
}
Very low Rds(on) values of less than 0.65mΩ at 2.5 V
}
Single N- and P-channel MOSFETs
ESD-protected devices
GND
VBUS
PMDPB58UPE
Q1
Q2
PMPB15XP
PMDPB70XP
PMC85XP
PMDPB58UPE
P
Dual P
P + RET driver
Dual P
PMU
GND
9 mm²
solder layout
1.2 mm²
solder layout
DFN1010D-3 and DFN1010B-6:
}
1.1 x 1.0 x 0.37 mm
}
Single die, with heatsink and dual die, with two
heatsinks
}
Tin-plated solderable side pads for single package
}
Power dissipation: 1 W (single) and 350 mW (dual)
}
R
DSon
range down to 50 mΩ and ID up to 3A
DFN2020MD-6 / DFN2020-6:
}
2.0 x 2.0 x 0.65 mm
}
Single/dual die, with heatsinks
}
Tin-plated solderable side pads for single version
}
Power dissipation: 1.7 W (single) and 1.2 W (dual)
}
R
DSon
range down to 10 mΩ and ID up to 13 A
Key products for DC-DC conversion in Notebooks and Tablets
Polarity
PMPB11EN
PMPB20EN
N
N
V
DS
(V)
30
30
R
DSon
typ (mΩ)
12
16.5
Package
DFN2020
DFN2020
More about NXP
ultra-small MOSFETs
www.nxp.com/ultra-small-mosfets
6
Mobile brochure
Mobile brochure
7
Highest efficiency in smallest packages – NXP low lo ss Schottky diodes and transistors in leadless DFN
Low V
F
Schottky rectifiers in small and flat leadless packages
– Extremely low V
F
with low I
R
, covering a current range of 0.2 – 2 A –
DFN1608D-2 is the smallest package on the market capable of carrying a current of 2 A.
Key features and benefits:
}
Space saving ultra-small package size with low height (1.6 x 0.8 x 0.37 mm)
}
Low values for V
F
and I
R
– ideal for battery powered devices
}
I
F
up to 2 A
}
With tin-plated, solderable side pads
}
AEC-Q101 qualified
}
The best possible protection of the NFC system – made by the global
leader for ESD protection and NFC solutions
Key products in DFN1608D-2:
V
F
max (mV) @
I
F
max
Optimization
Type number
I
R
max (mA)
@VR max
Low V
CEsat
Transistors - Keeping power consumption and heat dissipation to a minimum -
Key product PBSM5240PF: PNP low VCEsat transistor / N-ch. Trench MOSFET combination in DFN2020-6
For slim designs and best-in-class thermal performance to support higher currents and longer lifetimes.
}
25% better thermal performance due to heat
sink in DFN2020-6 leading to higher currents
and longer lifetimes.
}
Very low collector-emitter saturation
voltage V
CEsat
}
High collector current capability I
C
and I
CM
}
High collector current gain (h
FE
) at high I
C
}
Low-voltage MOSFET driver stage
Conventional solution (BJT + MOS)
requires two packages
PBSM5240PF = +50% footprint
reduction, lower height!
Application areas:
}
Boost converter for LED backlight and 5 V
USB-OTG supply (DC-DC up-conversion)
}
Wireless charging (passive rectification,
efficiency enhancement)
}
Logic (low-cost OR gate, AND gate)
}
Power (OR-ring of multiple supply voltage)
> 9 mm² footprint
4 mm
2
footprint
LED backlight boost converter
Applications
}
Load switches
}
Power management
}
Charging circuits
V
c
T1
PBSM5240PF
RSense
V
R
max (V)
I
F
max (A)
DCin
SWout
FB
PMU
BATT
PMEG2005EPK
PMEG2010EPK
PMEG2015EPK
PMEG2020EPK
PMEG4005EPK,
PMEG4010EPK
PMEG4015EPK
PMEG4020EPK
low V
F
low V
F
low V
F
low V
F
low I
R
low I
R
low I
R
low I
R
0.5
1
1.5
2
0.5
1
1.5
2
20
20
20
20
40
40
40
40
410
415
420
450
590
600
610
660
0.3
0.6
0.9
0.9
0.01
0.02
0.03
0.03
DC/DC
controller
GND
GND
brb672
Sink1
Sink2
DFN1608D-2 combines improved performance with reduced size
Key product BC847QAPN: 45 V, 100 mA general purpose double NPN/PNP
in a 1 x 1 mm package
The first double bipolar transistors in DFN1010B-6 offering tremendous package
size reduction while keeping the same power density compared to SOT363 or
SOT666.
Further single transistors are available in a leadless, ultra small DFN1010D-3
package, the fourth NXP DFN package with visible and solderable sidepads.
I
F
/ V
F
High
Miniaturization
Key products
as typically used in the charger path of feature phones and entry level smart phones:
Type number
1.1 mm
Performance
Low
Small
0.37 mm
0.6 mm
Package
DFN2020-3
DFN1010D-3
SOT89
SOT89
SOT457
transistor
polarity
PNP
PNP
PNP
PNP
PNP
P
tot
[max](mW)
1250
750
1600
1600
2500
V
CEO
[max](V)
-30
-30
-30
-20
-20
I
C
[max](A)
-3
-2
-3
-3
-4
V
CEsat
[max](mV)
-320
-440
-320
-300
-420
R
CEsat
@IC [max];
I
C
/I
B
=10 [typ]
(mΩ)
75
170
80
90
50
h
FE
[min]
280
200
200
220
250
f
T
[typ](MHz)
165
170
100
100
80
Size
Large
PBSS5330PA
PBSS230QA
PBSS5330X
PBSS5320X
PBSS301PD
Many more Schottky rectifiers available in ultra-small
DFN1006(D)-2 and DSN0603-2
View complete portfolio
Low V
F
rectifiers
View complete portfolio
Low V
CEsat
transistors
www.nxp.com/products/diodes/medium_power_schottky_diodes_200_ma
8
Mobile brochure
www.nxp.com/products/bipolar_transistors/low_vcesat_biss_transistors
Mobile brochure
9
