PESDxS2UQ series
Double ESD protection diodes in SOT663 package
Rev. 03 — 11 September 2008
Product data sheet
IMPORTANT NOTICE
Dear customer,
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- NXP Semiconductors, which will be used in future data sheets together with new contact
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NXP Semiconductors
NXP
Semiconductors
Product specification
Double ESD protection diodes
in SOT663 package
FEATURES
•
Uni-directional ESD protection of up to two lines
•
Max. peak pulse power: P
pp
= 150 W at t
p
= 8/20
µs
•
Low clamping voltage: V
(CL)R
= 20 V at I
pp
= 15 A
•
Low reverse leakage current: I
RM
< 1 nA
•
ESD protection > 30 kV
•
IEC 61000-4-2; level 4 (ESD)
•
IEC 61000-4-5 (surge); I
pp
= 15 A at t
p
= 8/20
µs.
APPLICATIONS
•
Computers and peripherals
•
Communication systems
•
Audio and video equipment
•
High speed data lines
•
Parallel ports.
DESCRIPTION
Uni-directional double ESD protection diodes in a SOT663
plastic package. Designed to protect up to two
transmission or data lines from ElectroStatic Discharge
(ESD) damage.
MARKING
TYPE NUMBER
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
MARKING CODE
E1
E2
E3
E4
E5
1
PESDxS2UQ series
QUICK REFERENCE DATA
SYMBOL
V
RWM
C
d
PARAMETER
reverse stand-off
voltage
diode capacitance
V
R
= 0 V;
f = 1 MHz
number of
protected lines
PINNING
PIN
1
2
3
cathode 1
cathode 2
common anode
DESCRIPTION
VALUE
3.3, 5, 12, 15
and 24
UNIT
V
200, 150, 38, 32 pF
and 23
2
3
1
3
2
2
001aaa732
sym022
Fig.1 Simplified outline (SOT663) and symbol.
Rev. 03 - 11 September 2008
2 of 13
NXP Semiconductors
Product specification
Double ESD protection diodes
in SOT663 package
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
P
pp
I
pp
PARAMETER
peak pulse power
peak pulse current
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
T
j
T
amb
T
stg
Notes
1. Non-repetitive current pulse 8/20
µs
exponential decaying waveform; see Fig.2.
2. Measured across either pins 1 and 3 or pins 2 and 3.
junction temperature
operating ambient temperature
storage temperature
CONDITIONS
8/20
µs
pulse; notes 1 and 2
8/20
µs
pulse; notes 1 and 2
−
DESCRIPTION
plastic surface mounted package; 3 leads
PESDxS2UQ series
VERSION
SOT663
MIN.
−
−
−
−
−
−
−
−65
−65
MAX.
150
15
15
5
5
3
150
+150
+150
UNIT
W
A
A
A
A
A
°C
°C
°C
Rev. 03 - 11 September 2008
3 of 13
NXP
Semiconductors
Product specification
Double ESD protection diodes
in SOT663 package
ESD maximum ratings
SYMBOL
ESD
PARAMETER
electrostatic discharge
capability
CONDITIONS
PESDxS2UQ series
VALUE
UNIT
IEC 61000-4-2 (contact discharge);
notes 1 and 2
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
HBM MIL-Std 883
PESDxS2UQ series
10
kV
30
30
30
30
23
kV
kV
kV
kV
kV
Notes
1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3.
2. Measured across either pins 1 and 3 or pins 2 and 3.
ESD standards compliance
ESD STANDARD
IEC 61000-4-2; level 4 (ESD); see Fig.3
HBM MIL-Std 883; class 3
>4 kV
CONDITIONS
>15 kV (air); > 8 kV (contact)
001aaa191
handbook, halfpage
120
MLE218
I
pp
100 %
90 %
Ipp
(%)
100 % Ipp; 8
µs
80
e
−t
50 % Ipp; 20
µs
40
10 %
0
0
10
20
30
t (µs)
40
t
r
=
0.7 to 1 ns
30 ns
60 ns
t
Fig.2
8/20
µs
pulse waveform according to
IEC 61000-4-5.
Fig.3
ElectroStatic Discharge (ESD) pulse
waveform according to IEC 61000-4-2.
Rev. 03 - 11 September 2008
4 of 13
NXP
Semiconductors
Product specification
Double ESD protection diodes
in SOT663 package
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
RWM
PARAMETER
reverse stand-off voltage
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
I
RM
reverse leakage current
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
V
BR
breakdown voltage
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
C
d
diode capacitance
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
V
(CL)R
clamping voltage
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
notes 1 and 2
I
pp
= 1 A
I
pp
= 15 A
I
pp
= 1 A
I
pp
= 15 A
I
pp
= 1 A
I
pp
= 5 A
I
pp
= 1 A
I
pp
= 5 A
I
pp
= 1 A
I
pp
= 3 A
−
−
−
−
−
−
−
−
−
−
f = 1 MHz; V
R
= 0 V
−
−
−
−
−
V
RWM
= 3.3 V
V
RWM
= 5 V
V
RWM
= 12 V
V
RWM
= 15 V
V
RWM
= 24 V
I
Z
= 5 mA
5.2
6.4
14.7
17.6
26.5
−
−
−
−
−
−
−
−
−
−
CONDITIONS
PESDxS2UQ series
MIN.
−
−
−
−
−
TYP.
MAX.
3.3
5
12
15
24
3
300
30
50
50
6.0
7.2
15.3
18.4
27.5
275
215
100
70
50
8
20
9
20
19
35
23
40
36
70
UNIT
V
V
V
V
V
µA
nA
nA
nA
nA
V
V
V
V
V
pF
pF
pF
pF
pF
V
V
V
V
V
V
V
V
V
V
0.55
50
<1
<1
<1
5.6
6.8
15.0
18.0
27.0
200
150
38
32
23
−
−
−
−
−
−
−
−
−
−
Rev. 03 - 11 September 2008
5 of 13
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