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PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package
Rev. 02 — 21 August 2009
Product data sheet
1. Product profile
1.1 General description
Quadruple ElectroStatic Discharge (ESD) protection diode arrays in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package designed to protect up to 4 signal
lines from the damage caused by ESD and other transients.
1.2 Features
I
I
I
I
ESD protection of up to 4 lines
Max. peak pulse power: P
PP
= 200 W
Ultra low leakage current: I
RM
= 50 pA
Low clamping voltage: V
CL
= 12 V at
I
PP
= 20 A
I
ESD protection up to 30 kV
I
IEC 61000-4-2; level 4 (ESD)
I
IEC 61000-4-5; (surge); I
PP
up to 20 A
1.3 Applications
I
Computers and peripherals
I
Audio and video equipment
I
Cellular handsets and accessories
I
Communication systems
I
Portable electronics
I
Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1.
Symbol
Per diode
V
RWM
reverse standoff voltage
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
-
-
-
-
-
-
-
-
-
-
3.3
5
12
15
24
V
V
V
V
V
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
NXP Semiconductors
PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package
Quick reference data
…continued
Parameter
diode capacitance
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
Conditions
f = 1 MHz; V
R
= 0 V
-
-
-
-
-
215
165
73
60
45
300
220
100
90
70
pF
pF
pF
pF
pF
Min
Typ
Max
Unit
Table 1.
Symbol
C
d
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
cathode 1
common anode
cathode 2
cathode 3
common anode
cathode 4
1
2
3
6
5
4
1
2
3
006aaa156
Simplified outline
Symbol
6
5
4
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
SC-74
Description
plastic surface-mounted package (TSOP6);
6 leads
Version
SOT457
Type number
4. Marking
Table 4.
Marking codes
Marking code
K4
K5
K6
K7
K8
Type number
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
PESDXS4UD_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 August 2009
2 of 12
NXP Semiconductors
PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PP
I
PP
Parameter
peak pulse power
peak pulse current
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
T
j
T
amb
T
stg
[1]
[2]
Conditions
t
p
= 8/20
µs
t
p
= 8/20
µs
[1][2]
[1][2]
Min
-
-
-
-
-
-
-
−65
−65
Max
200
20
20
10
6
4
150
+150
+150
Unit
W
A
A
A
A
A
°C
°C
°C
junction temperature
ambient temperature
storage temperature
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1, 3, 4 or 6 to 2 or 5
Table 6.
Symbol
V
ESD
ESD maximum ratings
Parameter
electrostatic discharge voltage
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
PESDxS4UD series
HBM MIL-STD-883
Conditions
IEC 61000-4-2
(contact discharge)
[1][2]
Min
Max
Unit
-
-
-
-
-
-
30
30
30
30
23
10
kV
kV
kV
kV
kV
kV
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1, 3, 4 or 6 to 2 or 5
Table 7.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 10 kV
IEC 61000-4-2; level 4 (ESD)
HBM MIL-STD-883; class 3
PESDXS4UD_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 August 2009
3 of 12
NXP Semiconductors
PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
µs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
µs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (µs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
µs
pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol
Per diode
V
RWM
reverse standoff voltage
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
I
RM
reverse leakage current
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
V
BR
breakdown voltage
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
V
RWM
= 3.3 V
V
RWM
= 5 V
V
RWM
= 12 V
V
RWM
= 15 V
V
RWM
= 24 V
I
R
= 1 mA
5.3
6.4
12.5
15.5
25.5
5.6
6.8
14.5
18
27
5.9
7.2
16
20.5
29
V
V
V
V
V
-
-
-
-
-
300
80
0.05
0.05
0.05
800
200
15
15
15
nA
nA
nA
nA
nA
-
-
-
-
-
-
-
-
-
-
3.3
5
12
15
24
V
V
V
V
V
Parameter
Conditions
Min
Typ
Max
Unit
PESDXS4UD_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 August 2009
4 of 12
NXP MCU
