PJA63P02
20V P-CHANNEL ENHANCEMENT MODE MOSFET
VOLTAGE
FEATURES
• R
DS(ON)
, V
GS
@-1.8V,I
D
@-2.3A<108 mΩ
• R
DS(ON)
, V
GS
@-4.5V,I
D
@-3.3A<63 mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC Converters
• Low Gate Charge
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
20 Volts
CURRENT
2.9 Amperes
MECHANICAL DATA
• Case: SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Apporx. Weight : 0.0003 ounces, 0.0084grams
• Marking : 63
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (T
A
=25
O
C unless otherwise noted )
PAR AME T E R
D r a i n- S o ur c e Vo lta g e
Ga te - S o ur c e Vo lta g e
C o nti nuo us D ra i n C urr e nt
P uls e d D r a i n C urr e nt
P o we r D i s s i p a ti o n ( No te s 1 )
Typ i c a l The r ma l Re s i s ta nc e (No te s 1 )
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra tur e Ra ng e
S te a d y- S ta te
T
A
=2 5
O
C
S te a d y- S ta te
T
A
=2 5
O
C
S YMB OL
V
DS
V
GS
I
D
I
D M
P
D
R
θJ
A
T
J
,T
S TG
L IMIT
-20
+1 2
- 2 .9
-12
0 .8
155
- 5 5 to + 1 5 0
U N IT S
V
V
A
A
W
O
C /W
O
C
NOTES:
1. Mounted on 7.5cm FR-4 PCB .
2
November 04,2011-REV.00
PAGE . 1
PJA63P02
ELECTRICAL CHARACTERISTICS (T
A
=25
O
C unless otherwise noted )
PAR AME T E R
S ta ti c
D ra i n-S o urc e B re a kd o wn Vo lta g e
Ga te Thre sho ld Vo lta g e
B V
DSS
V
GS (th)
V
GS
= 0 V, I
D
=-2 5 0μA
V
D S
=V
GS
, I
D
=-2 5 0μA
V
GS
= -4.5V, I
D
= -3.3A
D ra i n-S o urc e On-S ta te Re s i s ta nc e
R
D S (on)
V
GS
= -2.5V, I
D
= -2.8A
V
GS
= -1.8V, I
D
= -2.3A
Ze ro Ga te Vo lta g e D ra i n C urre nt
Gate -Source Leakage Current
D i o d e F o rwa rd Vo lta g e
Dynamic
Tota l Ga te C ha rg e
Ga te -S o urc e C ha rg e
Ga te -D ra i n C ha rg e
Turn-On D e la y Ti me
Turn-Off D e la y Ti me
Turn-On Ri se Ti me
Turn-Off F a ll Ti me
Inp ut C a p a ci ta nce
Outp ut C a p a ci ta nce
Re ve rse Transfe r C a p a ci ta nce
Q
g
Q
gs
Q
gd
td
on
td
off
t
r
t
f
C
i ss
C
os s
C
rss
V
D S
= -1 0 V, V
GS
=0 V
f=1 .0 MH
Z
V
D S
= -1 0 V, I
D
= -2 .7 A
V
GS
= -4.5V
-
-
-
-
-
-
-
-
-
-
1 2 .7
1 .5
2 .9 8
16.2
6 6 .4
2 0 .2
17.2
11 4 1
99
92
-
-
-
-
-
ns
-
-
-
-
-
pF
nC
I
D S S
I
GS S
V
SD
V
DS
= -16V, V
GS
=0V
V
GS
= +8 V, V
D S
=0 V
I
S
= -1 A , V
GS
=0 V
-2 0
-0 .4 5
-
-
-
-
-
-
-
-0 .6 1
50
62
79
-
-
-0 .7 8
-
-1 .0
63
80
108
-1
+1 0 0
-1
μA
nA
V
mΩ
V
V
S YMB OL
T E S T C ON D IT ION
MIN .
T YP.
MAX .
U N IT S
V
DS
= -10V , V
GS
= -4.5V,
R
G
= 6Ω
,
R
L
= 3Ω
November 04,2011-REV.00
PAGE . 2
PJA63P02
RATING AND CHARACTERISTIC CURVES
-I
DS
, Drain-to-S ource Current(A)
2000
30
25
20
V
GS
=-2V
15
10
5
0
0
1
2
3
4
5
V
GS
=-1.5V
V
GS
=-1V
V
GS
=-4.5V
V
GS
=-2.5V
C, Capacitance(pF)
1800
1600
1400
1200
1000
800
600
400
200
0
0
3
6
9
12
Ciss
Coss
Crss
V
GS
=0V
F=1MHZ
-V
DS
, Drain to Source Voltage(V)
Fig.1 Capacitance Variation
-V
DS,
Drain-to-Source Voltage(V)
Fig.2 Drain-Source Current VS Drain-Source Voltage
-I
DS
, Drain-to-Source Current(A)
30
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
3
3.5
T
A
=125℃
V
DS
=-5V
T
A
=25℃
R
DS
(on), On-Resistance(mΩ)
80
V
GS
=-2.5V
60
V
GS
=-4.5V
40
20
0
0
2
4
6
8
10
-V
GS
, Gate-to-Source Voltage(V)
-I
DS
, Drain-to-Source Current(A)
Fig.4 On-Resistsnce VS Drain-Source current
Fig.3 Drain-Source Current VS Gate-Source Voltage
R
DS
(on), On-Resistance(mΩ)
R
DS
(on), On-Resistance(mΩ)
100
90
80
70
60
50
40
1
1.5
2
2.5
3
3.5
4
4.5
5
I
DS
=-2.0A
I
DS
=-3.3A
80
V
GS
=-4.5V
I
D
=-3.3A
70
60
50
40
25
50
75
100
125
150
-V
GS
, Gate-to-Source Voltage(V)
T
J
, Junction Temperature (℃)
Fig.6 On-Resistsnce VS Junction Temperature
stsnce
vs. Drain current
Fig.5 On-Resistsnce VS Gate-Source Voltage
Fig.5 On-Resistsnce vs. Drain current
November 04,2011-REV.00
PAGE . 3
PJA63P02
RATING AND CHARACTERISTIC CURVES
-V
GS
(
th
), Gate Threshold Voltage
(V)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
25
50
75
100
125
150
I
DS
=-250uA
-I
SD
, Source to Drain Current(A)
1.6
T
J
=150℃
1.2
0.8
T
J
=125℃
T
J
=75℃
0.4
T
A
=25℃
0.0
0.2
0.4
0.6
0.8
1
T
J
, Junction Temperature (℃)
-V
SD
, Source-to-Drain voltage(V)
Fig.7 Gate Threshold Voltage VS Junction Temperature
Fig.8 Source-Drain Current VS Source-Drain Voltage
November 04,2011-REV.00
PAGE . 4
PJA63P02
MOUNTING PAD LAYOUT
SOT-23
0.035 MIN.
(0.90) MIN.
Unit
：
inch(mm)
0.031 MIN.
(0.80) MIN.
0.043
(1.10)
0.037
(0.95)
0.043
(1.10)
0.106
(2.70)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
November 04,2011-REV.00
0.078
(2.00)
PAGE . 5
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