PJD2N60 / PJU2N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 2A, 600V, R
DS(ON)
=4.6Ω@V
GS
=10V, I
D
=1.0A
•
•
•
•
•
•
Low ON Resistance
Fast Switching
Low Gate Charge
Fully Characterized Avalanche Voltage and Current
Specially Desigened for AC Adapter, Battery Charge and SMPS
In compliance with EU RoHs 2002/95/EC Directives
TO-252 / TO-251
TO-252
2
TO-251
D
G
1
S
3
G
1
2
D S
3
MECHANICAL DATA
• Case: TO-252 / TO-251 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
2
Drain
ORDERING INFORMATION
1
TYPE
PJD2N60
PJU2N60
MARKING
D2N60
U2N60
PACKAGE
TO-252
TO-251
PACKING
2500PCS/REEL
80PCS/TUBE
Gate
3
Source
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA ME TE R
D ra i n-S o urc e Vo lta g e
Ga te -S o urc e Vo lta g e
C o nti nuo us D ra i n C urre nt
P uls e d D ra i n C urre nt
1 )
Ma xi mum P o we r D i s s i p a ti o n
D e ra ti ng F a c to r
T
A
=2 5
O
C
S ymb o l
V
DS
V
GS
I
D
I
D M
P
D
T
J
,T
S TG
E
AS
R
θJ
C
R
θJ
A
P J D 2 N6 0
600
+3 0
2
8
4 4 .6
0 .3 6
P J U2 N6 0
Uni ts
V
V
2
8
4 3 .5
0 .3 5
A
A
W
O
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
-5 5 to +1 5 0
120
2 .8 0
50
2 .8 5
100
O
C
Avalanche Energy with Single Pulse
I
AS
=2.0A, VDD=50V, L=56mH
mJ
C /W
C /W
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance
O
Note :
1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
June 06, 2010-REV.00
PAGE . 1
PJD2N60 / PJU2N60
ELECTRICAL CHARACTERISTICS
( T
A
=25
O
C unless otherwise noted )
P a ra me te r
S ymb o l
Te s t C o nd i ti o n
Mi n.
Typ .
Ma x.
Uni ts
S ta ti c
D rai n-S o urc e B re a k d own Vo ltag e
B V
D SS
V
GS (th)
R
D S (o n)
I
DSS
I
GS S
V
GS
=0 V, I
D
=2 5 0 uA
V
D S
=V
GS
, I
D
=2 5 0 uA
V
GS
= 10V, I
D
= 1A
V
DS
=600V, V
GS
=0V
V
GS
=+3 0 V, V
D S
=0 V
600
2 .0
-
-
-
-
-
4.0
-
-
-
4 .0
4.6
10
+1 0 0
V
V
Ω
uA
nΑ
Ga te Thre s ho ld Vo lta g e
D ra i n-S o urc e On-S ta te
Re s i s ta nc e
Ze ro Ga te Vo lta g e D ra i n
C urre nt
Gate Body Leakage
Dynamic
To ta l Ga te C ha rg e
Ga te -S o urc e C ha rg e
Ga te -D ra i n C ha rg e
Turn-On D e la y Ti me
Turn-On Ri s e Ti me
Turn-Off D e la y Ti me
Turn-Off F a ll Ti me
Inp ut C a p a c i ta nc e
Outp ut C a p a c i ta nc e
Re ve rs e Tra ns fe r
C a p a c i ta nc e
Q
g
Q
gs
Q
gd
t
d (o n)
t
r
t
d (o ff)
t
f
C
C
C
i ss
-
9 .3
2 .0
3.3
10.8
10.4
2 3 .6
1 6 .2
320
30
3
13
-
-
18
16
ns
32
22
380
45
5.6
pF
nC
V
D S
=4 8 0 V, I
D
=2 A
V
GS
=1 0 V
-
-
-
V
DD
=300V , I
D
=2A
V
GS
=10V, R
G
=25Ω
-
-
-
-
o ss
V
D S
=2 5 V, V
GS
=0 V
f=1 .0 MH
Z
-
-
rs s
S o urc e -D ra i n D i o d e
Ma x. D i o d e F o rwa rd C urre nt
I
S
I
SM
V
SD
t
rr
Q
rr
-
-
I
S
=2 A , V
GS
=0 V
V
GS
=0 V, I
F
=2 A
d i /d t=1 0 0 A /us
-
-
-
-
-
-
-
-
230
1 .0
2 .0
8 .0
1 .4
-
-
A
A
V
ns
uC
Ma x.P uls e d S o urc e C urre nt
D i o d e F o rwa rd Vo lta g e
Re ve rs e Re c o ve ry Ti me
Re ve rs e Re c o ve ry C ha rg e
NOTE :
Plus Test: Pluse Width < 300us, Duty Cycle < 2%
.
June 06, 2010-REV.00
PAGE . 2
PJD2N60 / PJU2N60
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
℃
I
D
- Drain-to-Source Current (A)
3.5
3
V
GS
= 20V~ 6.0V
I
D
- Drain Source Current (A)
4
10
V
DS
=40V
2.5
2
5.0V
T
J
= 125
o
C
1
25
o
C
1.5
1
0.5
0
0
5
10
15
20
25
30
-55
o
C
0.1
2
3
4
5
6
7
8
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
8.0
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
V
GS
= 20V
V
GS
=10V
R
DS(ON)
- On Resistance(Ω )
Ω
R
DS(ON)
- On Resistance(Ω )
Ω
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
T
J
=25
o
C
I
D
=1A
0
1
2
3
4
I
D
- Drain Current (A)
5
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Fig.3 On Resistance vs Drain Current
Fig.4 On Resistance vs Gate to Source Voltage
R
DS(ON)
- On-Resistance(Normalized)
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50
-25
0
25
50
75
100
125
150
C - Capacitance (pF)
500
V
GS
=10 V
I
D
=1.0A
400
Ciss
300
200
100
0
0
Crss
5
10
15
20
f = 1MHz
V
GS
= 0V
Coss
25
30
T
J
- Junction Temperature (
o
C)
V
DS
- Drain-to-Source Voltage (V)
Fig.5 On Resistance vs Junction Temperature
June 06, 2010-REV.00
Fig.6 Capacitance
PAGE. 3
PJD2N60 / PJU2N60
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
℃
V
GS
- Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
0
2
4
6
8
10
12
100
V
DS
=480V
V
DS
=300V
V
DS
=120V
I
S
- Source Current (A)
I
D
=2A
V
GS
= 0V
10
T
J
= 125
o
C
1
25
o
C
-55
o
C
0.1
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
Q
g
- Gate Charge (nC)
V
SD
- Source-to-Drain Voltage (V)
Fig. 7 Gate Charge Waveform
Fig.8 Source-Drain Diode Forward Voltage
BV
DSS
- Breakdown Voltage(Normalized)
1.2
I
D
= 250µA
1.1
1
0.9
0.8
-50
-25
T
J
- Junction Temperature (
o
C)
0
25
50
75
100
125
150
Fig.9 Breakdown Voltage vs Junction Temperature
June 06, 2010-REV.00
PAGE. 4
PJD2N60 / PJU2N60
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
June 06, 2010-REV.00
PAGE . 5
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