PJP24N10 / PJF24N10
100V N-Channel Enhancement Mode MOSFET
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@30A=24mΩ
• Low On Resistance
• Excellent Gate Charge x R
DS(ON)
Product ( FOM )
• Fully Characterized Avalanche Voltage and Current
• Specially Designed for AC Adapter, High-Frequency Switch
and Synchronous Rectification
• Component are in compliance with EU RoHS 2002/95/EC
directives
1
2
G
3
D
S
1
2
G
3
S
D
TO-220AB / ITO-220AB
TO-220AB
ITO-220AB
INTERNAL SCHEMATIC DIAGRAM
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
Drain
ORDERING INFORMATION
TYPE
PJP24N10
PJF24N10
MARKING
P24N10
F24N10
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
Gate
Source
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA ME TE R
D ra i n-S o urc e Vo lta g e
Ga te -S o urc e Vo lta g e
C o nti nuo us D ra i n C urre nt
P uls e d D ra i n C urre nt
1 )
Ma xi mum P o we r D i s s i p a ti o n
D e ra ti ng F a c to r
T
A
=2 5
O
C
S ymb o l
V
DS
V
GS
I
D
I
D M
P
D
T
J
,T
S TG
E
AS
R
θJ
C
R
θJ
A
P J P 2 4 N1 0
P J F 2 4 N1 0
Uni ts
V
V
100
+2 0
42
160
89
0 .7 1
42
160
32
0 .4 2
A
A
W
O
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
-5 5 to +1 5 0
680
1 .4
6 2 .5
3 .8
100
O
C
Avalanche Energy with Single Pulse
I
AS
=17A, VDD=80V, L=4.7m
Η
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance
Note: 1. Maximum DC current limited by the package
mJ
C /W
C /W
O
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
June 03, 2010-REV.01
PAGE . 1
PJP24N10 / PJF24N10
ELECTRICAL CHARACTERISTICS
( T
A
=25
O
C unless otherwise noted )
P a ra me te r
S ymb o l
Te s t C o nd i ti o n
Mi n.
Typ .
Ma x.
Uni ts
S ta ti c
D r a i n- S o urc e B re a k d o wn Vo lta g e
B V
DSS
V
GS (th)
R
D S ( o n)
I
DSS
I
GS S
V
GS
=0 V, I
D
=2 5 0 uA
V
D S
=V
GS
, I
D
=2 5 0 uA
V
GS
= 10V, I
D
= 3
0
A
V
DS
=
8
0V, V
GS
=0V
V
GS
=+
2
0 V, V
D S
=0 V
100
2 .0
-
-
-
-
-
18.6
-
-
-
4 .0
24
1
+1 0 0
V
V
mΩ
uA
nΑ
Ga te Thre s ho ld Vo lta g e
D ra i n-S o urc e On-S ta te
Re s i s ta nc e
Ze ro Ga te Vo lta g e D ra i n
C urre nt
Gate Body Leakage
Dynamic
To ta l Ga te C ha rg e
Ga te -S o urc e C ha rg e
Ga te -D ra i n C ha rg e
Turn-On D e la y Ti me
Turn-On Ri s e Ti me
Turn-Off D e la y Ti me
Turn-Off F a ll Ti me
Inp ut C a p a c i ta nc e
Outp ut C a p a c i ta nc e
Re ve rs e Tra ns fe r
C a p a c i ta nc e
t
Q
g
Q
Q
t
gs
-
6 0 .6
8 .2
21.4
18.4
9.2
56
1 8 .8
1450
155
110
78
-
-
26
12
ns
68
26
3200
200
165
pF
nC
V
D S
=
5 0
V, I
D
=3 0 A ,
V
GS
=1 0 V
-
-
-
gd
d (o n)
t
r
d (o ff)
V
DD
=50V, I
D
=1A
V
GS
=1 0 V, R
G
=1.6Ω
-
-
-
-
t
C
C
C
f
i ss
o ss
V
D S
=
5 0
V, V
GS
=0 V
f=1 .0 MH
Z
-
-
rs s
S o urc e - D ra i n D i o d e
Ma x. D i o d e F o rwa rd C urre nt
I
S
V
SD
-
I
S
=
3 0
A , V
GS
=0 V
-
-
-
-
42
1 .3
A
V
D i o d e F o rwa rd Vo lta g e
NOTE:
Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
Switching
Test Circuit
V
IN
V
DD
Gate Charge
Test Circuit
V
GS
V
OUT
V
DD
R
L
R
L
R
G
1mA
R
G
June 03, 2010-REV.01
PAGE . 2
PJP24N10 / PJF24N10
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
℃
I
D
- Drain-to-Source Current (A)
V
GS
=10V~7V
80
60
40
5.0V
20
0
0
3
6
9
12
V
DS
- Drain-to-Source Voltage (V)
15
4.5V
6.0V
I
D
- Drain Source Current (A)
100
100
80
60
40
V
DS
=10V
T
J
= 125
o
C
20
0
2
25
o
C
-55
o
C
3
4
5
6
7
V
GS
- Gate-to-Source Voltage (V)
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
50
100
R
DS(ON)
- On Resistance(mΩ)
Ω
R
DS(ON)
- On Resistance(mΩ)
Ω
I
D
=30A
80
60
40
20
T
J
=25
o
C
0
T
J
=125
o
C
40
30
V
GS
=6.5V
20
V
GS
= 10V
10
0
0
20
40
60
I
D
- Drain Current (A)
80
4
5
6
7
8
9
V
GS
- Gate-to-Source Voltage (V)
10
Fig.3 On Resistance vs Drain Current
Fig.4 On Resistance vs Gate to Source Voltage
R
DS(ON)
- On-Resistance(Normalized)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
-50 -25 0
25 50 75 100 125 150
T
J
- Junction Temperature (
o
C)
V
GS
=10 V
I
D
=30A
5000
C - Capacitance (pF)
f = 1MHz
V
GS
= 0V
4000
3000
Ciss
C
C
C
2000
1000
Coss
0
Crss
0
10
20
30
40
50
V
DS
- Drain-to-Source Voltage (V)
Fig.5 On Resistance vs Junction Temperature
June 03, 2010-REV.01
Fig.6 Capacitance
PAGE. 3
PJP24N10 / PJF24N10
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
℃
V
GS
- Gate-to-Source Voltage (V)
10
8
6
4
2
0
0
10
20
30
40
50
Q
g
- Gate Charge (nC)
60
V
DS
=50V
I
D
=30A
100
I
S
- Source Current (A)
V
GS
= 0V
10
T
J
= 125
o
C
25
o
C
1
0.1
-55
o
C
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
Fig. 7 Gate Charge Waveform
Fig.8 Source-Drain Diode Forward Voltage
V
th
- G-S Threshold Voltage(Normalized)
1.2
I
D
= 250µA
1.1
1
0.9
0.8
0.7
0.6
-50 -25 0
25 50 75 100 125 150
T
J
- Junction Temperature (
o
C)
Fig.9 Breakdown Voltage vs Junction Temperature
June 03, 2010-REV.01
PAGE. 4
PJP24N10 / PJF24N10
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
June 03, 2010-REV.01
PAGE . 5
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