PPJQ2460
60V N-Channel Enhancement Mode MOSFET
Voltage
Features
60 V
Current
3.2A
DFN2020B-6L
R
DS(ON)
, V
GS
@10V, I
D
@3.2A<75mΩ
R
DS(ON)
, V
GS
@4.5V, I
D
@2.0A<90mΩ
Advanced Trench Process Technology
High density cell design for ultra low on-resistance
Lead free in comply with EU RoHS 2011/65/EU directives.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: DFN2020B-6L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Marking: 460
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
o
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T
a
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
LIMIT
UNITS
V
V
A
A
W
mW/
o
C
o
60
+20
3.2
12.8
2.0
16
-55~150
62.5
o
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
-
Junction to Ambient, t<10s
(Note 3)
C
C/W
November 16,2015-REV.02
Page 1
PPJQ2460
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
(Note 6)
o
SYMBOL
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
tr
td
(off)
tf
TEST CONDITION
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
=3.2A
V
GS
=4.5V, I
D
=2.0A
V
DS
=48V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
MIN.
60
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
1.8
53
61
-
-
9.3
2.2
1.9
509
47
23
3.2
9.7
18.5
6.4
MAX.
-
2.5
75
90
1
+100
-
-
-
-
-
-
-
-
-
-
UNITS
V
V
mΩ
uA
nA
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
V
DS
=48V, I
D
=3.0A,
V
GS
=10V
(Note 1,2)
V
DS
=15V, V
GS
=0V,
f=1.0MHZ
V
DD
=30V, I
D
=3.0A,
V
GS
=10V,
R
G
=3.3Ω
(Note 1,2)
nC
pF
ns
I
S
V
SD
---
I
S
=1A, V
GS
=0V
-
-
-
0.75
3.2
1.2
A
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. The maximum current rating is package limited.
4. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency
and duty cycles to keep initial TJ =25°C.
5. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
2
defined as the solder mounting surface of the drain pins. Mounted on a 1 inch with 2oz.square pad of copper.
6. Guaranteed by design, not subject to production testing.
November 16,2015-REV.02
Page 2
PPJQ2460
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Diode Characteristics
November 16,2015-REV.02
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PPJQ2460
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature.
Fig.9 Capacitance vs. Drain-Source Voltage.
November 16,2015-REV.02
Page 4
PPJQ2460
PART NO PACKING CODE VERSION
Part No Packing Code
PJQ2460_R1_00001
Package Type
DFN2020B-6L
Packing type
3K pcs / 7” reel
Marking
460
Version
Halogen free
MOUNTING PAD LAYOUT
DFN2020B-6L Dimension
Unit: mm
DFN2020B-6L
Unit: mm
November 16,2015-REV.02
Page 5
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